NCV7701DW

NCV7701 2.0 Amp H−Bridge Driver This automotive grade H−Bridge driver provides a flexible means for controlling loads requiring bidirectional drive currents. Bridge outputs are protected from overcurrent at each switch and overtemperature shutdown provides product robustness. The NCV7701 inputs can be interfaced to a range of voltages, including vehicle battery voltage. The product features a low quiescent current mode, allowing unswitched connection to the power source. The NCV7701 is produced using ON Semiconductor’s POWERSENSE BCD technology. http://onsemi.com SO−20L DW SUFFIX CASE 751D 20 1 Features • • • • • • • • • • • • • • MARKING DIAGRAM Forward, Reverse, Brake High, Brake Low Modes 1.0 A Output Current Capability (DC) Supply Voltage Range 7.0 V to 26 V 0.25 Ω RDS(ON) per Driver @ 25°C Sleep Mode (IQ < 10 µA) Overvoltage Protection Thermal Protection Undervoltage Disable Function Short Circuit Protection Cross Conduction Protection Synchronous Low−Side Rectification for Lower Power Dissipation Diagnostic Output (Open Drain) TTL/CMOS/Pull−Up to Battery Compatible Inputs 20 Lead SO Package with 8 Internally Fused Leads Typical Applications • DC Motors • Stepper Motors • Modulator Valves 20 NCV7701 AWLYYWW 1 A WL, L YY, Y WW, W = Assembly Location = Wafer Lot = Year = Work Week PIN CONNECTIONS 1 20 NC NC OUTA GND GND GND GND EN IN1 IN2 VBAT NC OUTB GND GND GND GND FAULT NC NC ORDERING INFORMATION Device Package Shipping† NCV7701DW SO−20L 37 Units/Rail NCV7701DWR2 SO−20L 1000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.  Semiconductor Components Industries, LLC, 2003 October, 2003 − Rev. 3 1 Publication Order Number: NCV7701/D NCV7701 VBAT EN Voltage Reference 200 kHz Oscillator Charge Pumps ILIM ILIM M1 M3 IN1 Bridge Control OUTB Gate Drive OUTA IN2 M2 M4 Fault Detection FAULT • TSD • OVSD • UVLO Masking Timer ILIM ILIM GND Figure 1. Block Diagram MAXIMUM RATINGS* Rating Value Unit Supply Voltage (DC) − VBAT (Note 1) −0.3 to 45 V Logic Input Voltage (DC) −0.3 to 12 V Junction Temperature Range −40 to 150 °C Storage Temperature Range −65 to 150 °C Peak Transient (1.0 ms rise time, 300 ms period, 31 V Load Dump @ VBAT = 14 V) (Note 1) 45 V ESD Susceptibility (Human Body Model) 2.0 kV Package Thermal Resistance Junction−to−Case, RθJC Junction−to−Ambient, RθJA 9.0 55 °C/W °C/W 230 peak °C Lead Temperature Soldering: Reflow: (SMD styles only) (Note 2) *The maximum package power dissipation must be observed. 1. External reverse−battery and transient voltage suppression (TVS) required. 2. 60 second maximum above 183°C. http://onsemi.com 2 NCV7701 ELECTRICAL CHARACTERISTICS (7.0 V ≤ VBAT ≤ 26 V, −40°C ≤ TJ ≤ 125°C; unless otherwise specified.) Note 3. Characteristic Test Conditions Min Typ Max Unit − − − − 10 8.0 µA mA General VBAT Quiescent Current: Low Quiescent Normal Operation EN = 0 V, VBAT ≤ 12.8 V 2.5 V ≤ EN ≤ VBAT, VBAT = 14 V EN Logic Input Low Level Input Voltage − − − 0.7 V High Level Input Voltage − 2.5 − − V Input Bias Current EN = 5.0 V 15 50 100 µA Input Leakage Current EN = 0 V − − 1.0 µA IN1, IN2, Logic Inputs Low Level Input Voltage − − − 0.8 V High Level Input Voltage − 2.0 − − V 5.0 20 40 µA − − 1.0 µA Input Bias Current 5.0 V on Logic Input, EN = 5.0 V Input Leakage Current 0 V on Logic Input, EN = 0 V IC Protection Overvoltage Shutdown − 27 32 37 V Overvoltage Hysteresis − 0.2 0.5 1.0 V Undervoltage Voltage Lockout − − − 6.5 V Undervoltage Hysteresis − 100 200 400 mV Thermal Shutdown (Guaranteed by Design) 160 185 210 °C Thermal Hysteresis (Guaranteed by Design) 10 22.5 35 °C Output High Voltage (VH) VBAT = 14 V, ISOURCE = 1.0 A, VH = VBAT − OUTX − 0.4 0.75 V Output Low Voltage (VL) VBAT = 14 V, ISOURCE = 1.0 A, VL = OUTX − VGND − 0.4 0.75 V Current Limit VBAT = 14 V 3.0 4.0 5.0 A Drivers OUTA, OUTB FAULT Output Output Leakage Current VFAULT = 5.0 V, Fault Absent − − 10 µA Output Low Voltage IFAULT = 0.5 mA, Fault Present − − 1.0 V AC Characteristics Output Turn−On Delay − − 5.0 10 µs Output Turn−Off Delay − − 5.0 10 µs Current Limit Mask Time − 20 40 60 µs 3. Designed to meet these characteristics over the stated voltage and temperature ranges, though may not be 100% parametrically tested in production. http://onsemi.com 3 NCV7701 Table 1. H−Bridge Mode Control Table 2. Fault Diagnostics EN IN1 IN2 H−Bridge OUTA OUTB Fault Condition Fault Pin H−Bridge 0 X X Off (Sleep Mode) Off Off No Faults High Z Normal Operation 1 0 0 Brake Low Low Low Undervoltage Low Off 1 0 1 Forward High Low Overvoltage Low Off 1 1 0 Reverse Low High Thermal Shutdown Low Off 1 1 1 Brake High High High Current Limit Low 1 or more Drivers in Current Limit PACKAGE PIN DESCRIPTION Pin No. Symbol Description 1 VBAT 2, 9, 10, 19, 20 NC No connection. 3 OUTB Bridge output. 4, 5, 6, 7, 14, 15, 16, 17 GND Power ground. 8 FAULT Diagnostic output. 11 IN2 Mode control input. 12 IN1 Mode control input. 13 EN Chip enable. 18 OUTA IC supply voltage. Bridge output. Operating Description During power up, the outputs are HI−Z regardless of the input states. When the undervoltage lockout threshold is exceeded, the outputs will reflect the input states. Outputs change to HI−Z whenever an undervoltage, overvoltage or thermal shutdown fault is detected. Normal operation will resume when faults are resolved. half−bridge is disabled for short to VBAT or short to GND faults. A mask timer is initiated after a fault is detected and prevents recognition of an overcurrent event until the mask time expires. Persistence of an overcurrent condition causes the bridge output to change to HI−Z and the FAULT output to latch low until the next transition occurs on either the input related to the faulted output or the ENA input is brought low then high again. This method of protection provides current limiting on a cycle−by−cycle basis and helps allow a stall torque current to be ignored during motor start. Continued overcurrent may eventually result in activation of the thermal shutdown circuitry, thus activating a second level of protection for the NCV7701. Overcurrent Protection Current is monitored continuously in each switch of each half bridge when the ENA input is in a high state thus protecting each switch from faults due to short to GND, short to VBAT or shorted load conditions. Only the affected http://onsemi.com 4 NCV7701 VIGN 1 + TVS 47 µF 20 VBAT NC NC NC OUTB OUTA GND GND GND NCV7701 GND GND GND GND GND FAULT EN NC IN1 NC IN2 Controller VCC Figure 2. Application Diagram http://onsemi.com 5 NCV7701 PACKAGE DIMENSIONS SO−20L DW SUFFIX CASE 751D−05 ISSUE F
A 20 X 45
M E h 0.25 H 10X NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF B DIMENSION AT MAXIMUM MATERIAL CONDITION. 11 B M D 1 10 20X B B 0.25 M T A S B S L A 18X e A1 SEATING PLANE C T DIM A A1 B C D E e H h L
MILLIMETERS MIN MAX 2.35 2.65 0.10 0.25 0.35 0.49 0.23 0.32 12.65 12.95 7.40 7.60 1.27 BSC 10.05 10.55 0.25 0.75 0.50 0.90 0
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