NCV8705
LDO Regulator - Ultra-Low
Quiescent Current, IQ 13 mA,
Ultra-Low Noise
500 mA
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The NCV8705 is a low noise, low power consumption and low
dropout Linear Voltage Regulator. With its excellent noise and PSRR
specifications, the device is ideal for use in products utilizing RF
receivers, imaging sensors, audio processors or any component
requiring an extremely clean power supply. The NCV8705 uses an
innovative Adaptive Ground Current circuit to ensure ultra low
ground current during light load conditions.
MARKING
DIAGRAM
1
WDFN6, 2x2
CASE 511BR
XX M
XX = Specific Device Code
M = Date Code
1
Features
• Operating Input Voltage Range: 2.5 V to 5.5 V
• Available − Fixed Voltage Option: 0.8 V to 3.5 V
•
•
•
•
•
•
•
•
•
•
•
•
•
1
Available − Adjustable Voltage Option: 0.8 V to 5.5 V−VDROP
Reference Voltage 0.8 V
Ultra−Low Quiescent Current of Typ. 13 mA
Ultra−Low Noise: 12 mVRMS from 100 Hz to 100 kHz
Very Low Dropout: 230 mV Typical at 500 mA
±2% Accuracy Over Load/Line/Temperature
High PSRR: 71 dB at 1 kHz
Internal Soft−Start to Limit the Turn−On Inrush Current
Thermal Shutdown and Current Limit Protections
Stable with a 1 mF Ceramic Output Capacitor
Active Output Discharge for Fast Turn−Off
Wettable Flank Package Option Available
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
A
L
Y
W
G
CIN
1 mF
OFF
ON
OUT
NCV8705
EN
N/C
GND
8705W
XXX
ALYWG
G
8705L
XXX
ALYWG
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
1
2
3
OUT
1
8 IN
N/C
2
7 N/C
N/C or ADJ
3
GND
4
6
EXP
5
4
WDFN6 2x2 mm
(Top View)
• ADAS, Infotainment & Cluster, and Telematics
• General Purpose Automotive & Industrial
• Building & Factory Automation, Smart Meters
IN
DFNW8, 3x3
CASE 507AD
1
Typical Applicaitons
VIN
DFN8, 3x3
CASE 506DB
EXP
6 N/C
5 EN
DFN8/DFNW8 3x3 mm
(Top View)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 20 of this data sheet.
VOUT
VIN
1 mF CIN
COUT
OFF
1 mF
Fixed Voltage Version
OUT
IN
NCV8705
EN
ADJ
ON
GND
VOUT
R1 C1
R2
COUT
1 mF
Adjustable Voltage Version
Figure 1. Typical Application Schematic
© Semiconductor Components Industries, LLC, 2017
September, 2019 − Rev. 8
1
Publication Order Number:
NCV8705/D
NCV8705
IN
ENABLE
LOGIC
EN
BANDGAP
REFERENCE
UVLO
INTEGRATED
SOFT−START
THERMAL
SHUTDOWN
MOSFET
DRIVER WITH
CURRENT LIMIT
OUT
AUTO LOW
POWER MODE
ACTIVE
DISCHARGE
EN
GND
IN
ENABLE
LOGIC
EN
BANDGAP
REFERENCE
UVLO
INTEGRATED
SOFT−START
THERMAL
SHUTDOWN
MOSFET
DRIVER WITH
CURRENT LIMIT
OUT
AUTO LOW
POWER MODE
ACTIVE
DISCHARGE
ADJ
EN
GND
Figure 2. Simplified Schematic Block Diagrams
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NCV8705
Table 1. PIN FUNCTION DESCRIPTION
Pin
Name
Pin No. −
Fixed
DFN8/DFNW8
Pin No. −
Adjustable
DFN8/DFNW8
Pin No. −
Fixed
WDFN6
Pin No. −
Adjustable
WDFN6
OUT
1
1
1
1
Regulated output voltage pin. A small 1 mF ceramic capacitor is needed from this pin to ground to assure stability.
GND
4
4
3
3
Power supply ground. Expose pad must be tied with
GND pin. Soldered to the copper plane allows for effective
heat dissipation.
EN
5
5
4
4
Enable pin. Driving EN over 0.9 V turns on the regulator.
Driving EN below 0.4 V puts the regulator into shutdown
mode.
IN
8
8
6
6
Input pin. A small capacitor is needed from this pin to
ground to assure stability.
ADJ
−
3
−
2
Feedback pin for set−up output voltage. Use resistor divider for voltage selection.
N/C
2, 3, 6, 7
2, 6, 7
2, 5
5
Not connected. This pin can be tied to ground to improve
thermal dissipation.
Description
Table 2. ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VIN
−0.3 V to 6 V
V
Output Voltage
VOUT
−0.3 V to VIN + 0.3 V
V
Enable Input
VEN
−0.3 V to VIN + 0.3 V
V
Adjustable Input
VADJ
−0.3 V to VIN + 0.3 V
V
tSC
Indefinite
s
TJ(MAX)
125
°C
TSTG
−55 to 150
°C
ESD Capability, Human Body Model (Note 2)
ESDHBM
2000
V
ESD Capability, Machine Model (Note 2)
ESDMM
200
V
Input Voltage (Note 1)
Output Short Circuit Duration
Maximum Junction Temperature
Storage Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114)
ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115)
Latchup Current Maximum Rating tested per JEDEC standard: JESD78.
Table 3. THERMAL CHARACTERISTICS (Note 3)
Symbol
Value
Thermal Characteristics, WDFN6 2x2 mm
Thermal Resistance, Junction−to−Air
Thermal Resistance Parameter, Junction−to−Board
qJA
YJB
116.5
30
Thermal Characteristics, DFN8 3x3 mm / DFNW8 3x3 mm
Thermal Resistance, Junction−to−Air
Thermal Resistance Parameter, Junction−to−Board
qJA
YJB
92.6
35.1
Rating
3. Single component mounted on 1 oz, FR 4 PCB with 645 mm2 Cu area.
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3
Unit
°C/W
°C/W
NCV8705
Table 4. ELECTRICAL CHARACTERISTICS
−40°C ≤ TJ ≤ 125°C; VIN = VOUT(NOM) + 0.5 V or 2.5 V, whichever is greater; VEN = 0.9 V, IOUT = 10 mA, CIN = COUT = 1 mF unless
otherwise noted. Typical values are at TJ = +25°C. (Note 4)
Parameter
Test Conditions
Operating Input Voltage
Output Voltage Range (Adjustable)
Symbol
Min
Max
Unit
VIN
2.5
5.5
V
VOUT
0.8
5.5−
VDO
V
1.9
V
+2
%
Undervoltage Lock−out
VIN rising
UVLO
1.2
Output Voltage Accuracy
VOUT + 0.5 V ≤ VIN ≤ 5.5 V, IOUT = 0 − 500 mA
VOUT
−2
Reference Voltage
Typ
VREF
VREF
1.6
0.8
Reference Voltage Accuracy
IOUT = 10 mA
Line Regulation
VOUT + 0.5 V ≤ VIN ≤ 4.5 V, IOUT = 10 mA
VOUT + 0.5 V ≤ VIN ≤ 5.5 V, IOUT = 10 mA
RegLINE
550
750
mV/V
Load Regulation
IOUT = 0 mA to 500 mA
RegLOAD
12
mV/mA
Load Transient
IOUT = 1 mA to 500 mA or 500 mA to 1 mA in
1 ms, COUT = 1 mF
TranLOAD
±120
mV
Dropout Voltage (Note 5)
IOUT = 500 mA, VOUT(nom) = 2.8 V
VDO
230
350
mV
Output Current Limit
VOUT = 90% VOUT(nom)
ICL
750
950
mA
Quiescent Current
IOUT = 0 mA
IQ
13
25
mA
Ground Current
IOUT = 500 mA
IGND
260
mA
Shutdown Current
VEN ≤ 0.4 V, TJ = +25°C
IDIS
0.12
mA
VEN ≤ 0 V, VIN = 2.0 to 4.5 V, TJ = −40 to +85°C
IDIS
0.55
EN Pin Threshold Voltage
High Threshold
Low Threshold
VEN Voltage increasing
VEN Voltage decreasing
EN Pin Input Current
VEN = 5.5 V
ADJ Pin Current
VADJ = 0.8 V
Turn−On Time
COUT = 1.0 mF, from assertion EN pin to 98%
VOUT(nom)
Power Supply Rejection Ratio
VIN = 3.8 V, VOUT = 2.8 V
(Fixed), IOUT = 500 mA
Output Noise Voltage
VEN_HI
VEN_LO
−2
V
510
+2
2
%
mA
V
0.9
0.4
IEN
100
1
nA
tON
150
ms
PSRR
73
71
56
dB
VOUT = 2.5 V (Fixed), VIN = 3.5 V, IOUT = 500 mA
f = 100 Hz to 100 kHz
VN
12
mVrms
Thermal Shutdown Temperature
Temperature increasing from TJ = +25°C
TSD
160
°C
Thermal Shutdown Hysteresis
Temperature falling from TSD
TSDH
f = 100 Hz
f = 1 kHz
f = 10 kHz
−
20
500
−
nA
°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TJ = TA
= 25_C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
5. Characterized when VOUT falls 100 mV below the regulated voltage at VIN = VOUT(NOM) + 0.5 V.
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NCV8705
OUTPUT VOLTAGE NOISE (mV/rtHz)
TYPICAL CHARACTERISTICS
10
1
IOUT = 10 mA
IOUT
IOUT = 500 mA
0.1
0.01
VIN = 2.5 V
VOUT = 0.8 V
CIN = COUT = 1 mF
MLCC, X7R,
1206 size
0.001
0.01
0.1
IOUT = 100 mA
RMS Output Noise (mV)
10 Hz − 100 kHz
100 Hz − 100 kHz
18.21
10 mA
19.06
100 mA
15.99
15.04
300 mA
14.42
13.39
500 mA
13.70
12.60
IOUT = 300 mA
1
100
10
1000
FREQUENCY (kHz)
OUTPUT VOLTAGE NOISE (mV/rtHz)
Figure 3. Output Voltage Noise Spectral Density for VOUT = 0.8 V, COUT = 1 mF
10
IOUT = 100 mA
1
0.1
0.01
IOUT = 10 mA
VIN = 2.5 V
VOUT = 0.8 V
CIN = 1 mF
COUT = 10 mF
MLCC, X7R,
1206 size
0.001
0.01
IOUT
IOUT = 500 mA
RMS Output Noise (mV)
10 Hz − 100 kHz
100 Hz − 100 kHz
15.28
10 mA
16.17
100 mA
16.41
15.65
300 mA
14.94
14.10
500 mA
14.08
13.11
IOUT = 300 mA
0.1
1
10
100
1000
FREQUENCY (kHz)
OUTPUT VOLTAGE NOISE (mV/rtHz)
Figure 4. Output Voltage Noise Spectral Density for VOUT = 0.8 V, COUT = 10 mF
10
1
IOUT = 100 mA
IOUT
IOUT = 300 mA
0.1
0.01
10 mA
VIN = 3.8 V
VOUT = 3.3 V
CIN = COUT = 1 mF
MLCC, X7R,
1206 size
0.001
0.01
0.1
IOUT = 500 mA
RMS Output Noise (mV)
10 Hz − 100 kHz
100 Hz − 100 kHz
18.12
15.39
100 mA
16.42
13.50
300 mA
16.35
12.47
500 mA
16.00
12.10
IOUT = 10 mA
1
10
100
1000
FREQUENCY (kHz)
Figure 5. Output Voltage Noise Spectral Density for VOUT = 3.3 V, COUT = 1 mF
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NCV8705
OUTPUT VOLTAGE NOISE (mV/rtHz)
TYPICAL CHARACTERISTICS
10
IOUT = 300 mA
1
IOUT = 10 mA
IOUT
IOUT = 100 mA
0.1
0.01
VIN = 3.8 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 10 mF
MLCC, X7R,
1206 size
0.001
0.01
RMS Output Noise (mV)
10 Hz − 100 kHz
100 Hz − 100 kHz
14.07
1 mA
17.35
100 mA
17.43
14.29
300 mA
16.55
13.33
500 mA
16.48
13.20
IOUT = 500 mA
0.1
1
10
100
1000
FREQUENCY (kHz)
OUTPUT VOLTAGE NOISE (mV/rtHz)
Figure 6. Output Voltage Noise Spectral Density for VOUT = 3.3 V, COUT = 10 mF
10
VOUT = 3.3 V, R1 = 25k,
R2 = 8.2k
1
VOUT
0.1
0.01
VOUT = 1.5 V, R1 = 15k,
R2 = 13k
RMS Output Noise (mV)
10 Hz − 100 kHz
100 Hz − 100 kHz
1.5 V
31.40
30.33
3.3 V
49.14
44.30
VIN = VOUT =+1 V
CIN = 1 mF
COUT = 10 mF
IOUT = 10 mA
0.001
0.01
0.1
1
10
100
1000
FREQUENCY (kHz)
OUTPUT VOLTAGE NOISE (mV/rtHz)
Figure 7. Output Voltage Noise Spectral Density for Adjustable Version – Different Output Voltage
10
C1 = none
C1 = 100 pF
1
C1 = 1 nF
C1 = 10 nF
IOUT
0.1
0.01
VIN = 4.3 V
VOUT = 3.3 V
R1 = 255k, R2 = 82k
CIN = COUT = 1 mF
IOUT = 10 mA
0.001
0.01
0.1
1
10
100
RMS Output Noise (mV)
10 Hz − 100 kHz
100 Hz − 100 kHz
none
50.17
43.85
100 pF
46.90
40.39
1 nF
36.92
27.99
10 nF
27.02
18.31
1000
FREQUENCY (kHz)
Figure 8. Output Voltage Noise Spectral Density for Adjustable Version for Various C1
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NCV8705
450
160
400
140
350
VOUT = 0.8 V
300
VOUT = 3.3 V
250
VOUT = 2.5 V
200
150
VIN = VOUT + 0.5 V
COUT = 1 mF
CIN = 1 mF
MLCC, X7R,
1206 size
100
50
0
IGND, GROUND CURRENT (mA)
IGND, GROUND CURRENT (mA)
TYPICAL CHARACTERISTICS
0
50
VIN = VOUT + 0.5 V
COUT = 1 mF
CIN = 1 mF
MLCC, X7R,
1206 size
40
20
0
0.25
0.5
0.75
1
1.25
1.5
1.75
Figure 9. Ground Current vs. Output Current
Figure 10. Ground Current vs. Output Current
from 0 mA to 2 mA
2
160
IGND, GROUND CURRENT (mA)
IGND, GROUND CURRENT (mA)
60
IOUT, OUTPUT CURRENT (mA)
250
TJ = 125°C
200
TJ = 25°C
150
VIN = 3.8 V
VOUT = 3.3 V
COUT = 1 mF
CIN = 1 mF
MLCC, X7R,
1206 size
TJ = −40°C
100
50
0
50
100 150 200
140
120
100
TJ = 125°C
80
TJ = 25°C
60
40
TJ = −40°C
20
0
250 300 350 400 450 500
0
0.25
0.5
0.75
1
1.25
VIN = 3.8 V
VOUT = 3.3 V
COUT = 1 mF
CIN = 1 mF
MLCC, X7R,
1206 size
1.5
1.75
IOUT, OUTPUT CURRENT (mA)
IOUT, OUTPUT CURRENT (mA)
Figure 11. Ground Current vs. Output Current
at Temperatures
Figure 12. Ground Current vs. Output Current
0 mA to 2 mA at Temperature
16
320
VOUT = 3.3 V
14
VDROP, DROPOUT VOLTAGE (mV)
IQ, QUIESCENT CURRENT (mA)
VOUT = 0.8 V
80
IOUT, OUTPUT CURRENT (mA)
300
0
VOUT = 2.5 V
100
0
250 300 350 400 450 500
100 150 200
VOUT = 3.3 V
120
12
VOUT = 2.5 V
10
VOUT = 0.8 V
8
6
4
2
0
−40
VIN = VOUT + 0.5 V
COUT = 1 mF
CIN = 1 mF
MLCC, X7R,
1206 size
−20
0
20
40
60
80
100
120
240
200
TJ = 125°C
TJ = 25°C
160
120
80
TJ = −40°C
40
0
140
VIN = VOUT + 0.5 V
COUT = 1 mF
CIN = 1 mF
MLCC, X7R,
1206 size
280
2
0
50
100
150
200
250 300 350 400
450 500
TJ, JUNCTION TEMPERATURE (°C)
IOUT, OUTPUT CURRENT (mA)
Figure 13. Quiescent Current vs. Temperature
Figure 14. Dropout Voltage vs. Output Current
at Temperature (2.5 V)
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NCV8705
TYPICAL CHARACTERISTICS
400
VIN = VOUT + 0.5 V
COUT = 1 mF
CIN = 1 mF
MLCC, X7R,
1206 size
280
240
200
160
VDROP, DROPOUT VOLTAGE (mV)
VDROP, DROPOUT VOLTAGE (mV)
320
TJ = 125°C
TJ = 25°C
120
80
TJ = −40°C
40
0
0
50
100
150
200
250 300 350 400
VIN = VOUT + 0.5 V
COUT = 1 mF
CIN = 1 mF
MLCC, X7R,
1206 size
350
300
250
200
IOUT = 300 mA
150
100
IOUT = 0 mA
50
0
−40
450 500
−20
0
IOUT, OUTPUT CURRENT (mA)
250
IOUT = 500 mA
200
IOUT = 300 mA
150
100
IOUT = 0 mA
50
0
−40
VOUT, OUTPUT VOLTAGE (V)
VOUT, OUTPUT VOLTAGE (V)
300
−20
0
20
40
60
80
100
120
60
IIN = 0 mA
COUT = 1 mF
CIN = 1 mF
MLCC, X7R,
1206 size
3.5
3
2.5
80
100
120
VOUT = 3.3 V
VOUT = 2.5 V
1.5
VOUT = 0.8 V
1
0.5
0
1
3
2
4
6
5
TJ, JUNCTION TEMPERATURE (°C)
VIN, INPUT VOLTAGE (V)
Figure 17. Dropout Voltage vs. Temperature,
(3.3 V)
Figure 18. Input Voltage vs. Output Voltage
0.8014
0.8012
0.8010
0.8008
0.8006
0.8004
0.8002
0.8000
0.7998
0.7996
0.7994
0.7992
0.7990
−40 −20
VIN = 2.5 V
VOUT = 0.8 V
COUT = 1 mF
CIN = 1 mF
MLCC, X7R,
1206 size
0
20
40
60
80
140
2
0
140
100
120
VOUT, OUTPUT VOLTAGE (V)
VDROP, DROPOUT VOLTAGE (mV)
350
40
Figure 16. Dropout Voltage vs. Temperature
(2.5 V)
4
VIN = VOUT + 0.5 V
COUT = 1 mF
CIN = 1 mF
MLCC, X7R,
1206 size
20
TJ, JUNCTION TEMPERATURE (°C)
Figure 15. Dropout Voltage vs. Output Current
at Temperatures (3.3 V)
400
IOUT = 500 mA
140
1.804
1.803
1.802
1.801
1.800
1.799
1.798
1.797
1.796
1.795
1.794
1.793
1.792
−40 −20
VIN = 3 V
VOUT = 2.5 V
COUT = 1 mF
CIN = 1 mF
MLCC, X7R,
1206 size
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 19. Output Voltage vs. Temperature,
(0.8 V)
Figure 20. Output Voltage vs. Temperature,
(2.5 V)
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NCV8705
700
VIN = 3.8 V
VOUT = 3.3 V
COUT = 1 mF
CIN = 1 mF
MLCC, X7R,
1206 size
0
20
40
60
80
REGLINE, LINE REGULATION (mV/V)
100
120
140
VIN = 3.8 V
VOUT = 3.3 V
COUT = 1 mF
CIN = 1 mF
MLCC, X7R,
1206 size
950
900
850
800
750
700
−40 −20
0
20
40
60
80
100
120
140
600
580
560
540
520
VIN = 2.5 V
VOUT = 1.8 V
COUT = 1 mF
CIN = 1 mF
MLCC, X7R,
1206 size
500
−40 −20
0
20
40
60
80
100
120 140
8
7
6
5
VIN = 2.5 V
VOUT = 1.8 V
COUT = 1 mF
CIN = 1 mF
MLCC, X7R,
1206 size
4
3
2
1
0
−40 −20
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 23. Line Regulation vs. Temperature,
(3.3 V)
Figure 24. Load Regulation vs. Temperature,
(1.8 V)
0.3
VIN = 3.8 V
VOUT = 3.3 V
COUT = 1 mF
CIN = 1 mF
MLCC, X7R,
1206 size
IDIS, DISABLE CURRENT (mA)
5
620
Figure 22. Line Regulation vs. Temperature,
(1.8 V)
1000
6
640
Figure 21. Output Voltage vs. Temperature,
(3.3 V)
1050
7
660
TJ, JUNCTION TEMPERATURE (°C)
1150
8
680
TJ, JUNCTION TEMPERATURE (°C)
1200
REGLOAD, LOAD REGULATION (mV/mA)
REGLINE, LINE REGULATION (mV/V)
3.305
3.304
3.303
3.302
3.301
3.300
3.299
3.298
3.297
3.296
3.295
3.294
3.293
−40 −20
REGLOAD, LOAD REGULATION (mV/mA)
VOUT, OUTPUT VOLTAGE (V)
TYPICAL CHARACTERISTICS
4
3
2
1
0
−40 −20
0
20
40
60
80
100
120
0.25
0.2
0.15
VEN ≤ 0.4 V
RL = 330 W
COUT = 1 mF
CIN = 1 mF
MLCC, X7R,
1206 size
VIN = 4.5 V
0.1
0.05
VIN = 2.3 V
0
−0.05
−40 −20
140
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 25. Load Regulation vs. Temperature,
(3.3 V)
Figure 26. Disable Current vs. Temperature
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NCV8705
750
120
735
ICL, CURRENT LIMIT (mA)
VEN = 5.5 V
100
80
VEN = 0.4 V
60
VIN = 3.8 V
VOUT = 3.3 V
RL = 330 W
COUT = 1 mF
CIN = 1 mF
MLCC, X7R,
1206 size
40
20
0
−40 −20
0
20
40
60
80
100
120
720
705
VOUT = 1.8 V
690
675
660
VOUT = 3.3 V
VIN = VOUT + 0.5 V
COUT = 1 mF
CIN = 1 mF
MLCC, X7R,
1206 size
645
630
615
600
−40 −20
140
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 27. Enable Current vs. Temperature
Figure 28. Current Limit vs. Temperature
780
ISC, SHORT−CIRCUIT CURRENT (mA)
800
VOUT = 3.3 V
760
740
720
VOUT = 1.8 V
700
680
VIN = VOUT + 0.5 V
COUT = 1 mF
CIN = 1 mF
MLCC, X7R,
1206 size
660
640
620
600
−40 −20
0
20
40
60
80
100
120
140
800
780
760
740
720
VOUT = 0.8 V
CIN = 1 mF
COUT = 1 mF
MLCC, X7R
1206 size
700
680
660
640
620
600
2.5
3.00
3.50
4.00
4.50
5.00
TJ, JUNCTION TEMPERATURE (°C)
VIN, INPUT VOLTAGE (V)
Figure 29. Short−Circuit vs. Temperature
Figure 30. Short−Circuit Current vs.
Temperature
1
1
0.9
0.9
VEN, ENABLE VOLTAGE (V)
VEN, ENABLE VOLTAGE (V)
ISC, SHORT−CIRCUIT CURRENT (mA)
IEN, CURRENT TO ENABLE PIN (nA)
TYPICAL CHARACTERISTICS
0.8
0.7
0.6
0.5
VIN = 3.8 V
VOUT = 3.3 V
COUT = 1 mF
CIN = 1 mF
MLCC, X7R,
1206 size
0.4
0.3
0.2
0.1
0
−40 −20
0
20
40
60
80
100
120
140
0.8
0.7
0.6
0.5
VIN = 3.8 V
VOUT = 3.3 V
COUT = 1 mF
CIN = 1 mF
MLCC, X7R,
1206 size
0.4
0.3
0.2
0.1
0
−40 −20
0
20
40
60
80
100
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 31. Enable Threshold (High)
Figure 32. Enable Threshold (Low)
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10
5.50
120 140
NCV8705
390
380
370
360
250
VIN = 3.8 V
VOUT = 3.3 V
COUT = 1 mF
CIN = 1 mF
MLCC, X7R,
1206 size
tSTART−UP, START−UP TIME (ms)
400
350
340
330
320
310
300
−40 −20
0
20
60
40
80
40
VIN = 2.8 V + 100 mVPP
VOUT = 1.8 V
COUT = 1 mF
CIN = none
MLCC, X7R,
1206 size
100
0.1
1
10
100
1k
20
40
60
80
100
120 140
IOUT = 10 mA
IOUT = 100 mA
IOUT = 300 mA
IOUT = 500 mA
70
60
50
40
VIN = 3.8 V + 100 mVPP
VOUT = 2.8 V
COUT = 1 mF
CIN = none
MLCC, X7R,
1206 size
30
20
10
0.01
0.1
1
10
100
1k
Figure 36. Power Supply Rejection Ratio,
VOUT = 2.8 V
90
IOUT = 10 mA
IOUT = 100 mA
IOUT = 300 mA
IOUT = 500 mA
50
VIN = 4.3 V + 100 mVPP
VOUT = 3.3 V
COUT = 1 mF
CIN = none
MLCC, X7R,
1206 size
0
0.01
0
80
0
10k
60
10
160
Figure 35. Power Supply Rejection Ratio,
VOUT = 1.8 V
70
20
170
FREQUENCY (kHz)
80
30
180
FREQUENCY (kHz)
90
40
VIN = 3.8 V
VOUT = 3.3 V
COUT = 1 mF
CIN = 1 mF
MLCC, X7R,
1206 size
190
90
IOUT = 10 mA
IOUT = 100 mA
IOUT = 300 mA
IOUT = 500 mA
0
0.01
200
Figure 34. Start−up Time vs. Temperature
50
10
210
Figure 33. Discharge Resistance vs.
Temperature
60
20
220
TJ, JUNCTION TEMPERATURE (°C)
70
30
230
150
−40 −20
140
RR, RIPPLE REJECTION (dB)
RR, RIPPLE REJECTION (dB)
120
240
TJ, JUNCTION TEMPERATURE (°C)
80
RR, RIPPLE REJECTION (dB)
100
RR, RIPPLE REJECTION (dB)
RDIS, ACTIVE DISCHARGE RESISTANCE (Ω)
TYPICAL CHARACTERISTICS
0.1
1
10
100
1k
10k
80
70
60
50
40
VIN = 4.3 V + 100 mVPP
VOUT = 3.3 V
CIN = none
MLCC, X7R,
1206 size
30
20
10
0
0.01
0.1
1
COUT = 1 mF
COUT = 4.7 mF
COUT = 10 mF
10
100
1k
FREQUENCY (kHz)
FREQUENCY (kHz)
Figure 37. Power Supply Rejection Ratio,
VOUT = 3.3 V
Figure 38. Power Supply Rejection Ratio,
VOUT = 3.3 V, IOUT = 10 mA − Different COUT
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11
10k
10k
NCV8705
TYPICAL CHARACTERISTICS
90
80
70
60
50
40
30
20
10
VIN = 4.3 V + 100 mVPP
VOUT = 3.3 V
ILOAD = 500 mA
CIN = none
MLCC, X7R,
1206 size
0
0.01
0.1
1
10
100
1k
C1 = none
C1 = 100 pF
C1 = 1 nF
C1 = 10 nF
C1 = 100 nF
70
60
50
40
30
20
10
VIN = 4.3 V + 100 mVPP
VOUT = 3.3 V
R1 = 225k, R2 = 82k
ILOAD = 10 mA
COUT = 1 mF MLCC,
X7R, 1206 size
0
0.01
10k
0.1
1
10
100
1k
FREQUENCY (kHz)
Figure 40. Power Supply Rejection Ratio,
VOUT = 3.3 V, IOUT = 500 mA − Different COUT
ESR, EQUIVALENT SERIAL RESISTANCE (W)
FREQUENCY (kHz)
Figure 39. Power Supply Rejection Ratio,
VOUT = 3.3 V, IOUT = 500 mA − Different COUT
10k
100
UNSTABLE REGION
10
VOUT = 0.8 V
1
VOUT = 3.3 V
0.1
0.01
STABLE REGION
0
50
100 150
200 250
300 350 400 450 500
IOUT, OUTPUT CURRENT (mA)
VIN = 3.8 V
VOUT = 3.3 V
VEN = 1 V
COUT = 1 mF
CIN = 1 mF
IOUT = 500 mA
VOUT
IINRUSH
1 V/div
IINRUSH
VEN
100 ms/div
VIN = 3.8 V
VOUT = 3.3 V
VEN = 1 V
COUT = 1 mF
CIN = 1 mF
IOUT = 500 mA
VOUT
100 ms/div
Figure 42. Enable Turn−on Response,
COUT = 1 mF, IOUT = 10 mA
Figure 43. Enable Turn−on Response,
COUT = 1 mF, IOUT = 500 mA
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12
200 mA/div
500 mV/div
VEN
200 mA/div
500 mV/div
Figure 41. Output Capacitor ESR vs. Output
Current
1 V/div
RR, RIPPLE REJECTION (dB)
COUT = 1 mF
COUT = 4.7 mF
COUT = 10 mF
RR, RIPPLE REJECTION (dB)
80
100
NCV8705
VOUT
IINRUSH
1 V/div
VIN = 3.8 V
VOUT = 3.3 V
VEN = 1 V
COUT = 10 mF
CIN = 1 mF
IOUT = 500 mA
VOUT
100 ms/div
Figure 45. Enable Turn−on Response,
COUT = 10 mF, IOUT = 500 mA
tRISE = 1 ms
500 mV/div
100 ms/div
VEN
VIN = 2.5 V
VOUT = 0.8 V
VEN = 1 V
IOUT = 10 mA
VEN
tFALL = 1 ms
20 mV/div
VOUT
VIN = 2.5 V
VOUT = 0.8 V
VEN = 1 V
IOUT = 10 mA
COUT = 10 mF
COUT = 10 mF
VOUT
COUT = 1 mF
5 ms/div
5 ms/div
Figure 46. Line Transient Response − Rising
Edge, VOUT = 0.8 V, IOUT = 10 mA
Figure 47. Line Transient Response − Falling
Edge, VOUT = 0.8 V, IOUT = 10 mA
VEN
tRISE = 1 ms
500 mV/div
500 mV/div
20 mV/div
COUT = 1 mF
VIN = 3.8 V
VOUT = 3.3 V
VEN = 1 V
IOUT = 10 mA
VEN
tFALL = 1 ms
COUT = 1 mF
VOUT
VIN = 3.8 V
VOUT = 3.3 V
VEN = 1 V
IOUT = 10 mA
COUT = 10 mF
COUT = 10 mF
20 mV/div
20 mV/div
VIN = 3.8 V
VOUT = 3.3 V
VEN = 1 V
COUT = 10 mF
CIN = 1 mF
IOUT = 500 mA
Figure 44. Enable Turn−on Response,
COUT = 10 mF, IOUT = 10 mA
500 mV/div
1 V/div
IINRUSH
VEN
VOUT
COUT = 1 mF
10 ms/div
10 ms/div
Figure 48. Line Transient Response − Rising
Edge, VOUT = 3.3 V, IOUT = 10 mA
Figure 49. Line Transient Response − Falling
Edge, VOUT = 3.3 V, IOUT = 10 mA
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13
200 mA/div
500 mV/div
VEN
200 mA/div
500 mV/div
TYPICAL CHARACTERISTICS
NCV8705
500 mV/div
VEN
tRISE = 1 ms
COUT = 10 mF
VOUT
COUT = 1 mF
5 ms/div
10 ms/div
Figure 50. Line Transient Response − Rising
Edge, VOUT = 3.3 V, IOUT = 500 mA
Figure 51. Line Transient Response − Falling
Edge, VOUT = 3.3 V, IOUT = 500 mA
IOUT
VIN = 2.5 V
VOUT = 0.8 V
CIN = 1 mF (MLCC)
tRISE = 1 ms
IOUT
tFALL = 1 ms
COUT = 10 mF
VOUT
50 mV/div
VOUT
100 mV/div
VIN = 2.5 V
VOUT = 0.8 V
CIN = 1 mF (MLCC)
COUT = 1 mF
COUT = 10 mF
COUT = 1 mF
10 ms/div
100 ms/div
Figure 52. Load Transient Response − Rising
Edge, VOUT = 0.8 V, IOUT = 1 mA to 500 mA,
COUT = 1 mF, 10 mF
Figure 53. Load Transient Response − Falling
Edge, VOUT = 0.8 V, IOUT = 1 mA to 500 mA,
COUT = 1 mF, 10 mF
VIN = 2.5 V
VOUT = 0.8 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
IOUT
VIN = 2.5 V
VOUT = 0.8 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
IOUT
200 mA/div
200 mA/div
VIN = 3.8 V
VOUT = 3.3 V
VEN = 1 V
IOUT = 500 mA
COUT = 10 mF
20 mV/div
20 mV/div
200 mA/div
tFALL = 1 ms
VIN = 3.8 V
VOUT = 3.3 V
VEN = 1 V
IOUT = 500 mA
COUT = 1 mF
VOUT
VEN
200 mA/div
500 mV/div
TYPICAL CHARACTERISTICS
tFALL_IOUT = 1 ms
tRISE_IOUT = 10 ms
VOUT
50 mV/div
100 mV/div
VOUT
tRISE_IOUT = 1 ms
tFALL_IOUT = 10 ms
10 ms/div
10 ms/div
Figure 54. Load Transient Response − Rising
Edge, VOUT = 0.8 V, IOUT = 1 mA to 500 mA,
tRISE_IOUT = 1 ms, 10 ms
Figure 55. Load Transient Response − Falling
Edge, VOUT = 0.8 V, IOUT = 1 mA to 500 mA,
tFALL_IOUT = 1 ms, 10 ms
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14
NCV8705
200 mA/div
200 mA/div
TYPICAL CHARACTERISTICS
VIN = 3.8 V
VOUT = 3.3 V
CIN = 1 mF (MLCC)
IOUT
VIN = 3.8 V
VOUT = 3.3 V
CIN = 1 mF (MLCC)
IOUT
COUT = 1 mF
50 mV/div
VOUT
COUT = 10 mF
COUT = 1 mF
5 ms/div
50 ms/div
Figure 56. Load Transient Response − Rising
Edge, VOUT = 3.3 V, IOUT = 1 mA to 500 mA,
COUT = 1 mF, 10 mF
Figure 57. Load Transient Response − Falling
Edge, VOUT = 3.3 V, IOUT = 1 mA to 500 mA,
COUT = 1 mF, 10 mF
200 mA/div
200 mA/div
100 mV/div
COUT = 10 mF
VOUT
VIN = 3.8 V
VOUT = 3.3 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
IOUT
IOUT
tFALL_IOUT = 1 ms
VOUT
50 mV/div
50 mV/div
VOUT
tRISE_IOUT = 10 ms
tRISE_IOUT = 1 ms
10 ms/div
50 ms/div
Figure 58. Load Transient Response − Rising
Edge, VOUT = 3.3 V, IOUT = 1 mA to 500 mA,
tRISE_IOUT = 1 ms, 10 ms
Figure 59. Load Transient Response − Falling
Edge, VOUT = 3.3 V, IOUT = 1 mA to 500 mA,
tFALL_IOUT = 1 ms, 10 ms
1 V/div
VIN = 3.3 V
IOUT = 1 mA
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
VIN = 5.5 V
VOUT = 3.3 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
VOUT
Short−Circuit
500 mA/div
VIN
600 mV/div
VIN = 3.8 V
VOUT = 3.3 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
tFALL_IOUT = 10 ms
VOUT
Thermal Shutdown
IOUT
5 ms/div
20 ms/div
Figure 60. Turn−on/off, Slow Rising VIN
Figure 61. Short−Circuit and Thermal
Shutdown
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15
NCV8705
VIN = 5.5 V
VOUT = 3.3 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
VOUT
500 mA/div
1 V/div
TYPICAL CHARACTERISTICS
VIN = 5.5 V
VOUT = 3.3 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
VEN
COUT = 10 mF
1 V/div
500 mA/div
VOUT
IOUT
COUT = 1 mF
50 ms/div
5 ms/div
Figure 62. Short−Circuit Current Peak
Figure 63. Enable Turn−off
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16
NCV8705
APPLICATIONS INFORMATION
General
10
The NCV8705 is a high performance 500 mA Low
Dropout Linear Regulator. This device delivers excellent
noise and dynamic performance. Thanks to its adaptive
ground current feature the device consumes only 13 mA of
quiescent current at no*load condition. The regulator
features ultra*low noise of 12 mVRMS, PSRR of 71 dB at
1 kHz and very good load/line transient performance. Such
excellent dynamic parameters and small package size make
the device an ideal choice for powering the precision analog
and noise sensitive circuitry in portable applications. The
LDO achieves this ultra low noise level output without the
need for a noise bypass capacitor. A logic EN input provides
ON/OFF control of the output voltage. When the EN is low
the device consumes as low as typ. 10 nA from the IN pin.
The device is fully protected in case of output overload,
output short circuit condition and overheating, assuring a
very robust design.
CAPACITY CHANGE (%)
0
−10
−20
−30
−40
Package Size
−50
1206
0805
0603
0402
−60
−70
−80
0
1
2
3
4
5
6
DC BIAS (V)
7
8
9
10
Figure 64. Capacitance Change vs. DC Bias
No−load Operation
The regulator remains stable and regulates the output
voltage properly within the ±2% tolerance limits even with
no external load applied to the output.
Input Capacitor Selection (CIN)
It is recommended to connect a minimum of 1 mF Ceramic
X5R or X7R capacitor close to the IN pin of the device. This
capacitor will provide a low impedance path for unwanted
AC signals or noise modulated onto constant input voltage.
There is no requirement for the min. /max. ESR of the input
capacitor but it is recommended to use ceramic capacitors
for their low ESR and ESL. A good input capacitor will limit
the influence of input trace inductance and source resistance
during sudden load current changes. Larger input capacitor
may be necessary if fast and large load transients are
encountered in the application.
Adjustable Operation
The output voltage range can be set from 0.8 V to
5.5 V−VDO by resistor divider network. Use Equations 1
and 2 to calculate appropriate values of resistors and output
voltage. Typical current to ADJ pin is 1 nA. For output
voltage 0.8 V ADJ pin can be tied directly to Vout pin.
ǒ
V OUT + 0.8 @ 1 )
R2 ^ R1 @
Output Decoupling (COUT)
The NCV8705 requires an output capacitor connected as
close as possible to the output pin of the regulator. The
minimal capacitor value is 1 mF and X7R or X5R dielectric
due to its low capacitance variations over the specified
temperature range. The NCV8705 is designed to remain
stable with minimum effective capacitance of 1 mF to
account for changes with temperature, DC bias and package
size. Especially for small package size capacitors such as
0402 the effective capacitance drops rapidly with the
applied DC bias. Refer to the Figure 64, for the capacitance
vs. package size and DC bias voltage dependence.
There is no requirement for the minimum value of
Equivalent Series Resistance (ESR) for the COUT but the
maximum value of ESR should be less than 900 mΩ. Larger
output capacitors and lower ESR could improve the load
transient response or high frequency PSRR as shown in
typical characteristics. It is not recommended to use
tantalum capacitors on the output due to their large ESR. The
equivalent series resistance of tantalum capacitors is also
strongly dependent on the temperature, increasing at low
temperature. The tantalum capacitors are generally more
costly than ceramic capacitors.
Ǔ
R1
) R 1 @ I ADJ
R2
(eq. 1)
1
VOUT
*1
0.8
(eq. 2)
The resistor divider should be designed carefully to
achieve the best performance. Recommended current
through divider is 10 mA and more. Too high values of
resistors (MW) cause increasing noise and longer start−up
time. The suggested values of the resistors are in Table 5. To
improve dynamic performance capacitor C1 should be at
least 1 nF. Recommended range of capacity is between
10 nF and 100 nF. Higher value of capacitor C1 increasing
start−up time.
Table 5. Proposal Resistor Values for Various VOUT
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17
VOUT
R1
R2
1.5 V
130k
150k
3.3 V
256k
82k
5.0 V
430k
82k
NCV8705
1 mF CIN
OFF
VOUT
OUT
IN
NCV8705
EN
ADJ
ON
GND
R1 C1
R2
Internal Soft−Start circuit
NCV8705 contains an internal soft−start circuitry to
protect against large inrush currents which could otherwise
flow during the start−up of the regulator. Soft−start feature
protects against power bus disturbances and assures a
controlled and monotonic rise of the output voltage.
COUT
1 mF
Thermal Shutdown
Figure 65. NCV8705 Adjustable with Noise
Improvement Capacitor
When the die temperature exceeds the Thermal Shutdown
threshold (TSD − 160°C typical), Thermal Shutdown event
is detected and the device is disabled. The IC will remain in
this state until the die temperature decreases below the
Thermal Shutdown Reset threshold (TSDU − 140°C typical).
Once the IC temperature falls below the 140°C the LDO is
enabled again. The thermal shutdown feature provides the
protection from a catastrophic device failure due to
accidental overheating. This protection is not intended to be
used as a substitute for proper heat sinking.
Enable Operation
The NCV8705 uses the EN pin to enable/disable its device
and to deactivate/activate the active discharge function.
If the EN pin voltage >0.9 V the device is guaranteed to
be enabled. The NCV8705 regulates the output voltage and
the active discharge transistor is turned−off.
The EN pin has internal pull−down current source with
typ. value of 110 nA which assures that the device is
turned−off when the EN pin is not connected. Build in 2 mV
hysteresis into the EN prevents from periodic on/off
oscillations that can occur due to noise.
In the case where the EN function isn’t required the EN
should be tied directly to IN.
Power Dissipation
As power dissipated in the NCV8705 increases, it might
become necessary to provide some thermal relief. The
maximum power dissipation supported by the device is
dependent upon board design and layout. Mounting pad
configuration on the PCB, the board material, and the
ambient temperature affect the rate of junction temperature
rise for the part.
The maximum power dissipation the NCV8705 can
handle is given by:
Undervoltage Lockout
The internal UVLO circuitry assures that the device
becomes disabled when the VIN falls below typ. 1.5 V. When
the VIN voltage ramps−up the NCV8705 becomes enabled, if
VIN rises above typ. 1.6 V. The 100 mV hysteresis prevents
from on/off oscillations that can occur due to noise on VIN line.
P D(MAX) +
Output Current Limit
Output Current is internally limited within the IC to a
typical 750 mA. The NCV8705 will source this amount of
current measured with a voltage drops on the 90% of the
nominal VOUT. If the Output Voltage is directly shorted to
ground (VOUT = 0 V), the short circuit protection will limit
the output current to 800 mA (typ). The current limit and
short circuit protection will work properly up to
VIN = 5.5 V at TA = 125°C. There is no limitation for the
short circuit duration.
P D [ V INǒI GND@I OUTǓ ) I OUTǒV IN * V OUTǓ (eq. 4)
1.6
qJA, JUNCTION−TO−AMBIENT
THERMAL RESISTANCE (°C/W)
200
PD(MAX), TA = 25°C, 2 oz Cu
1.4
1.2
180
1
160
PD(MAX), TA = 25°C, 1 oz Cu
140
qJA, 1 oz Cu
120
100
qJA, 2 oz Cu
0
(eq. 3)
q JA
The power dissipated by the NCV8705 for given
application conditions can be calculated from the following
equations:
220
80
ƪTJ(MAX) * TAƫ
100
200
300
400
500
600
COPPER HEAT SPREADER AREA (mm2)
0.8
0.6
0.4
0.2
700
Figure 66. qJA and PD(MAX) vs. Copper Area (WDFN6)
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18
PD(MAX), MAXIMUM POWER
DISSIPATION (W)
VIN
NCV8705
qJA, JUNCTION−TO−AMBIENT
THERMAL RESISTANCE (°C/W)
PD(MAX), TA = 25°C, 2 oz Cu
250
1.5
1.2
200
PD(MAX), TA = 25°C, 1 oz Cu
0.9
150
qJA, 1 oz Cu
100
qJA, 2 oz Cu
50
0
0
100
200
300
400
500
600
COPPER HEAT SPREADER AREA (mm2)
0.6
0.3
PD(MAX), MAXIMUM POWER
DISSIPATION (W)
1.8
300
0
700
Figure 67. qJA and PD(MAX) vs. Copper Area (DFN8/DFNW8)
Reverse Current
the range 100 kHz – 10 MHz can be tuned by the selection
of COUT capacitor and proper PCB layout.
The PMOS pass transistor has an inherent body diode
which will be forward biased in the case that VOUT > VIN.
Due to this fact in cases, where the extended reverse current
condition can be anticipated the device may require
additional external protection.
Output Noise
The IC is designed for ultra−low noise output voltage
without external noise filter capacitor (Cnr). Figures 3 − 6
shows NCV8705 noise performance. Generally the noise
performance in the indicated frequency range improves with
increasing output current.
Load Regulation
The NCV8705 features very good load regulation of
maximum 2 mV in 0 mA to 500 mA range. In order to
achieve this very good load regulation a special attention to
PCB design is necessary. The trace resistance from the OUT
pin to the point of load can easily approach 100 mW which
will cause 50 mV voltage drop at full load current,
deteriorating the excellent load regulation.
The turn−on time is defined as the time period from EN
assertion to the point in which VOUT will reach 98% of its
nominal value. This time is dependent on various
application conditions such as VOUT(NOM), COUT, TA.
Line Regulation
PCB Layout Recommendations
Turn−On Time
To obtain good transient performance and good regulation
characteristics place CIN and COUT capacitors close to the
device pins and make the PCB traces wide. In order to
minimize the solution size, use 0402 capacitors. Larger
copper area connected to the pins will also improve the
device thermal resistance. The actual power dissipation can
be calculated from the equation above (Equation 4).
The IC features very good line regulation of 0.75 mV/V
measured from VIN = VOUT + 0.5 V to 5.5V. For battery
operated applications it may be important that the line
regulation from VIN = VOUT + 0.5 V up to 4.5 V is only
0.55 mV/V.
Power Supply Rejection Ratio
The NCV8705 features very good Power Supply
Rejection ratio. If desired the PSRR at higher frequencies in
www.onsemi.com
19
NCV8705
ORDERING INFORMATION
Device
Voltage Option
Marking
NCV8705MT12TCG
1.2 V
VF
NCV8705MT18TCG
1.8 V
VA
NCV8705MT28TCG
2.8 V
VC
NCV8705MT30TCG
3.0 V
VD
NCV8705MT33TCG
3.3 V
VE
NCV8705MTADJTCG
Adjustable
VJ
NCV8705MW12TCG
1.2 V
8705W
120
NCV8705MW18TCG
1.8 V
8705W
180
NCV8705MW28TCG
2.8 V
8705W
280
NCV8705MW30TCG
3.0 V
8705W
300
NCV8705MW33TCG
3.3 V
8705W
330
Adjustable
8705W
ADJ
3.3 V
8705L
330
NCV8705MWADJTCG
NCV8705ML33TCG
Package
Feature
Shipping†
WDFN6
(Pb−Free)
Non−Wettable Flank
3000 / Tape & Reel
DFN8
(Pb−Free)
Wettable Flank,
SFS Process
3000 / Tape & Reel
DFNW8
(Pb−Free)
Wettable Flank,
SLP Process
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
20
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN8, 3x3, 0.65P
CASE 506DB
ISSUE A
1
SCALE 2:1
A
B
D
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
PIN ONE
REFERENCE
2X
0.10 C
2X
0.10 C
L
DETAIL A
A3
DETAIL B
ÉÉÉ
ÇÇÇ
ÇÇÇ
(A3)
A1
A
DETAIL B
0.05 C
NOTE 4
A1
SIDE VIEW
C
D2
DETAIL A
8X
4
1
1
L
E2
8
5
8X
b
0.10 C A B
e
BOTTOM VIEW
0.05 C
NOTE 3
XXXXX
XXXXX
ALYWG
G
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
RECOMMENDED
SOLDERING FOOTPRINT*
3.30
2.05
MILLIMETERS
MIN
MAX
0.80
1.00
0.00
0.05
0.20 REF
0.25
0.35
0.20
0.30
3.00 BSC
1.65
1.85
3.00 BSC
1.40
1.60
0.65 BSC
0.65 REF
0.30
0.50
0.00
0.15
XXXXX = Specific Device Code
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
b1
e/2
DIM
A
A1
A3
b
b1
D
D2
E
E2
e
e1
L
L1
GENERIC
MARKING DIAGRAM*
SEATING
PLANE
e1
4X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30mm FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
E
TOP VIEW
0.05 C
DATE 12 OCT 2016
8X
0.63
PACKAGE
OUTLINE
1.64 3.30
0.65
PITCH
1
0.65
PITCH
12X
0.40
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON92252F
DFN8, 3X3, 0.65P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFNW8 3x3, 0.65P
CASE 507AD
ISSUE A
1
SCALE 2:1
DATE 15 JUN 2018
A
B
D
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
L3
L
L
ALTERNATE
CONSTRUCTION
DETAIL A
E
PIN ONE
REFERENCE
EXPOSED
COPPER
DETAIL B
PLATING
A1
A4
A
ALTERNATE
CONSTRUCTION
DETAIL B
A3
C
C
0.05 C
NOTE 4
A4
C
SIDE VIEW
SEATING
PLANE
PLATED
SURFACES
D2
DETAIL A
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30mm FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
5. THIS DEVICE CONTAINS WETTABLE FLANK
DESIGN FEATURE TO AID IN FILLET FORMATION ON THE LEADS DURING MOUNTING.
A4
A1
TOP VIEW
0.05 C
L3
1
L3
SECTION C−C
4
DIM
A
A1
A3
A4
b
D
D2
E
E2
e
K
L
L3
GENERIC
MARKING DIAGRAM*
1
8X
L
E2
K
8
5
e/2
8X
0.05 C
NOTE 3
BOTTOM VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
2.50
2.35
8X
0.58
8
5
1
4
XXXXXX
XXXXXX
ALYWG
G
XXXXXX = Specific Device Code
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
b
0.10 C A B
e
MILLIMETERS
MIN
NOM
MAX
1.00
0.80
0.90
−−−
−−−
0.05
0.20 REF
0.10
−−−
−−−
0.25
0.30
0.35
2.90
3.00
3.10
2.30
2.40
2.50
2.90
3.00
3.10
1.55
1.65
1.75
0.65 BSC
0.28 REF
0.30
0.40
0.50
0.05 REF
3.30 1.75
PACKAGE
OUTLINE
8X
0.65
PITCH
0.40
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON17792G
DFNW8 3x3, 0.65P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN6 2x2, 0.65P
CASE 511BR
ISSUE C
DATE 01 DEC 2021
GENERIC
MARKING DIAGRAM*
1
XX M
XX = Specific Device Code
M = Date Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON55829E
WDFN6 2X2, 0.65P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
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vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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