NCV8774CDT33RKG

LDO Regulator - Ultra Low Iq 350 mA NCV8774C The NCV8774C is a 350 mA LDO regulator. Its robustness allows NCV8774C to be used in severe automotive environments. Ultra low quiescent current as low as 17 mA typical makes it suitable for applications permanently connected to battery requiring ultra low quiescent current with or without load. This feature is especially critical when modules remain in active mode when ignition is off. The NCV8774C contains protection functions as current limit, thermal shutdown. www.onsemi.com MARKING DIAGRAM DPAK−3 DT SUFFIX CASE 369C Features • • • • • • • • • Output Voltage Options: 3.3 V and 5 V Output Voltage Accuracy: ±2% Output Current up to 350 mA Ultra Low Quiescent Current: typ 17 mA Wide Input Voltage Operation Range: up to 40 V Protection Features − Current Limitation − Thermal Shutdown EMC Compliant NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Grade 1 Qualified and PPAP Capable These are Pb−Free Devices x A WL, L Y WW G 8774CxG ALYWW = Voltage Option = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 12 of this data sheet. Typical Applications (For safety applications refer to Figure 29) • • • • Body Control Module Instruments and Clusters Occupant Protection and Comfort Powertrain VBAT Cin 0.1 mF Vin Vout NCV8774C Vout Cout 1 mF GND Figure 1. Typical Application Schematic © Semiconductor Components Industries, LLC, 2019 May, 2020 − Rev. 2 1 Publication Order Number: NCV8774C/D NCV8774C Vin Vout Driver With Current Limit − + Thermal Vref Shutdown GND Figure 2. Simplified Block Diagram PIN CONNECTIONS PIN Tab, 1. Vin 2. GND 3. Vout 1 DPAK−3 Figure 3. Pin Connections PIN FUNCTION DESCRIPTION Pin No. Pin Name Description 1 Vin 2, TAB GND Power Supply Ground. 3 Vout Regulated Output Voltage. Connect 1 mF capacitor with ESR < 5 W to ground. Positive Power Supply Input. Connect 0.1 mF capacitor to ground. www.onsemi.com 2 NCV8774C ABSOLUTE MAXIMUM RATINGS Rating Symbol Min Max Unit DC Vin −0.3 40 V Load Dump − Suppressed * − 45 V Vout −0.3 7 V Junction Temperature TJ −40 150 °C Storage Temperature TSTG −55 150 °C Input Voltage (Note 1) Input Voltage (Note 2) Output Voltage US Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. Load Dump Test B (with centralized load dump suppression) according to ISO16750−2 standard. Guaranteed by design. Not tested in production. Passed Class A according to ISO16750−1. ESD CAPABILITY (Note 3) Rating Symbol Min Max Unit ESD Capability, Human Body Model ESDHBM −4 4 kV ESD Capability, Charged Device Model ESDCDM −1 1 kV 3. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC−Q100−002 (JS−001−2017) Field Induced Charge Device Model ESD characterization is not performed on plastic molded packages with body sizes smaller than 2 x 2 mm due to the inability of a small package body to acquire and retain enough charge to meet the minimum CDM discharge current waveform characteristic defined in JEDEC JS−002−2018 LEAD SOLDERING TEMPERATURE AND MSL (Note 4) Symbol Rating Moisture Sensitivity Level DPAK−3 Min MSL Max 1 Unit − 4. For more information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. THERMAL CHARACTERISTICS Rating Thermal Characteristics, DPAK−3 Thermal Resistance, Junction−to−Air (Note 5) Thermal Reference, Junction−to−Case (Note 5) Thermal Resistance, Junction−to−Air (Note 6) Thermal Reference, Junction−to−Case (Note 6) Symbol Value RqJA RYJC RqJA RYJC 49 6.6 28 6.6 Unit °C/W 5. Values based on 1s0p board with copper area of 645 mm2 (or 1 in2) of 1 oz copper thickness and FR4 PCB substrate. Single layer − according to JEDEC51.3. 6. Values based on 2s2p board with copper area of 645 mm2 (or 1 in2) of 1 oz copper thickness and FR4 PCB substrate. 4 layers − according to JEDEC51.7. RECOMMENDED OPERATING RANGE Rating Symbol Min Max Unit Input Voltage (Note 7) Vin 4.5 40 V Junction Temperature TJ −40 150 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 7. Minimum Vin = 4.5 V or (Vout + VDO), whichever is higher. www.onsemi.com 3 NCV8774C ELECTRICAL CHARACTERISTICS Vin = 13.5 V, Cin = 0.1 mF, Cout = 1 mF, Min and Max values are valid for temperature range −40°C ≤ TJ ≤ +150°C unless noted otherwise and are guaranteed by test, design or statistical correlation. Typical values are referenced to TJ = 25°C. (Note 8) Test Conditions Parameter Symbol Min Typ Max Unit 3.234 3.234 4.9 4.9 3.3 3.3 5.0 5.0 3.366 3.366 5.1 5.1 3.234 4.9 3.3 5.0 3.366 5.1 Regline −20 0 20 mV Regload −35 0 35 mV − − 200 350 350 600 − − − − 17 − 19 − 21 23 23 25 REGULATOR OUTPUT Output Voltage (Accuracy %) Output Voltage (Accuracy %) Line Regulation Load Regulation Dropout Voltage (Note 9) 3.3 V Vin = 4.5 V to 40 V, Iout = 0.1 mA to 200 mA Vin = 4.5 V to 16 V, Iout = 0.1 mA to 350 mA 5.0 V Vin = 5.45 V to 40 V, Iout = 0.1 mA to 200 mA Vin = 5.7 V to 16 V, Iout = 0.1 mA to 350 mA 3.3 V Vin = 4.5 V to 40 V, Iout = 0 mA 5.0 V Vin = 5.45 V to 40 V, Iout = 0 mA 3.3 V Vin = 4.5 V to 28 V, Iout = 5 mA 5.0 V Vin = 6 V to 28 V, Iout = 5 mA Iout = 0.1 mA to 350 mA Vout Vout VDO 5.0 V Iout = 200 mA Iout = 350 mA V V mV QUIESCENT CURRENT Quiescent Current (Iq = Iin − Iout) Iq Iout = 0 mA, TJ = 25°C Iout = 0 mA, TJ ≤ 125°C Iout = 0.1 mA, TJ = 25°C Iout = 0.1 mA, TJ ≤ 125°C mA CURRENT LIMIT PROTECTION Current Limit Vout = 0.96 x Vout_nom ILIM 400 − 1100 mA Short Circuit Current Limit Vout = 0 V ISC 400 − 1100 mA PSRR − 80 − dB Thermal Shutdown Temperature (Note 10) TSD 150 175 195 °C Thermal Shutdown Hysteresis (Note 10) TSH − 10 − °C PSRR Power Supply Ripple Rejection (Note 10) f = 100 Hz, 0.5 Vpp THERMAL SHUTDOWN Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 8. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at TA [ TJ. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 9. Measured when output voltage falls 100 mV below the regulated voltage at Vin = 13.5 V. 10. Values based on design and/or characterization. www.onsemi.com 4 NCV8774C TYPICAL CHARACTERISTICS 800 Vin = 13.5 V Iout = 100 mA 28 26 Iq, QUIESCENT CURRENT (mA) Iq, QUIESCENT CURRENT (mA) 30 24 22 20 18 16 14 12 10 −40 −20 0 20 40 60 80 600 500 400 300 200 Vout = 5 V 100 0 100 120 140 160 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 Vin, INPUT VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 4. Quiescent Current vs. Temperature Figure 5. Quiescent Current vs. Input Voltage 1200 Iq, QUIESCENT CURRENT (mA) Iout = 100 mA TJ = 25°C Vout = 3.3 V 700 TJ = −40°C 1000 TJ = 25°C 800 TJ = 150°C 600 400 200 Vin = 13.5 V 0 0 50 100 150 200 250 300 350 IOUT, OUTPUT CURRENT (mA) Figure 6. Quiescent Current vs. Output Current Vin = 13.5 V Iout = 100 mA Vout(nom) = 5.0 V 5.08 5.05 5.03 5.00 4.98 4.95 4.93 4.90 −40 −20 0 20 40 60 80 3.38 Vout, OUTPUT VOLTAGE (V) Vout, OUTPUT VOLTAGE (V) 5.10 Vin = 13.5 V Iout = 100 mA Vout(nom) = 3.3 V 3.36 3.34 3.32 3.3 3.28 3.26 3.24 3.22 −40 −20 100 120 140 160 TJ, JUNCTION TEMPERATURE (°C) 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (°C) Figure 7. Output Voltage vs. Temperature Figure 8. Output Voltage vs. Temperature www.onsemi.com 5 NCV8774C TYPICAL CHARACTERISTICS 4.0 Iout = 100 mA Vout(nom) = 5.0 V 5 Vout, OUTPUT VOLTAGE (V) Vout, OUTPUT VOLTAGE (V) 6 4 3 TJ = 150°C 2 TJ = 25°C 1 TJ = −40°C 0 0 1 2 3 4 5 6 Vin, INPUT VOLTAGE (V) 7 3.0 2.5 2.0 TJ = 150°C 1.5 TJ = 25°C 1.0 0.5 0.0 8 Iout = 100 mA Vout(nom) = 3.3 V 3.5 TJ = −40°C 0 Figure 9. Output Voltage vs. Input Voltage 700 Vout(nom) = 5.0 V 600 TJ = 150°C 500 400 TJ = 25°C 300 200 TJ = −40°C 100 0 0 50 100 150 200 250 300 2 3 4 5 6 Vin, INPUT VOLTAGE (V) 7 8 Figure 10. Output Voltage vs. Input Voltage VDO, DROPOUT VOLTAGE (mV) VDO, DROPOUT VOLTAGE (mV) 700 1 500 Iout = 350 mA 400 300 200 Iout = 200 mA 100 0 350 Vout(nom) = 5.0 V 600 0 Iout, OUTPUT CURRENT (mA) 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) Figure 12. Dropout vs. Temperature Figure 11. Dropout vs. Output Current www.onsemi.com 6 160 NCV8774C TYPICAL CHARACTERISTICS TJ = 25°C Vout(nom) = 5.0 V ISC @ Vout = 0 V 800 ILIM @ Vout = 4.8 V 600 400 200 0 0 5 10 15 20 25 30 Vin, INPUT VOLTAGE (V) 35 ISC @ Vout = 0 V 800 ILIM @ Vout = 3.168 V 600 400 200 0 40 0 Figure 13. Output Current Limit vs. Input Voltage 800 700 ILIM @ Vout = 4.8 V 600 500 400 −40 −20 0 20 40 60 80 900 40 ISC @ Vout = 0 V 800 ILIM @ Vout = 3.168 V 700 600 500 400 −40 −20 100 120 140 160 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (°C) Figure 15. Output Current Limit vs. Temperature Figure 16. Output Current Limit vs. Temperature 100 100 Unstable Region ESR, STABILITY REGION (W) ESR, STABILITY REGION (W) 35 Vin = 13.5 V Vout(nom) = 3.3 V TJ, JUNCTION TEMPERATURE (°C) 10 Stable Region 1 0.1 0.01 15 20 25 30 Vin, INPUT VOLTAGE (V) 1000 900 ISC @ Vout = 0 V 10 1100 Vin = 13.5 V Vout(nom) = 5.0 V 1000 5 Figure 14. Output Current Limit vs. Input Voltage ILIM, ISC, CURRENT LIMIT (mA) ILIM, ISC, CURRENT LIMIT (mA) 1100 TJ = 25°C Vout(nom) = 3.3 V 1000 ILIM, ISC, CURRENT LIMIT (mA) ILIM, ISC, CURRENT LIMIT (mA) 1000 Vin = 13.5 V Vout(nom) = 5.0 V Cout = 1.0 mF − 100 mF 0 50 100 150 200 250 300 Unstable Region 10 Stable Region 1 0.1 0.01 350 Vin = 13.5 V Vout(nom) = 3.3 V Cout = 1.0 mF − 100 mF 0 50 100 150 200 250 300 350 Iout, OUTPUT CURRENT (mA) Iout, OUTPUT CURRENT (mA) Figure 17. Cout ESR Stability Region vs. Output Current Figure 18. Cout ESR Stability Region vs. Output Current www.onsemi.com 7 NCV8774C TJ = 25°C Iout = 1 mA Cout = 10 mF trise/fall = 1 ms (Vin) Vout(nom) = 5.0 V 26 V Vin, (10 V/div) Vin, (10 V/div) TYPICAL CHARACTERISTICS 6V 6V 3.310 V Vout, (20 mV/div) Vout, (20 mV/div) 5.013 V 4.989 V 3.286 V TIME (1 ms/div) TIME (1 ms/div) Figure 19. Line Transients 0.1 mA 0.1 mA 3.37 V Vout, (100 mV/div) Vout, (100 mV/div) 5.07 V 3.21 V 4.87 V TIME (200 ms/div) TIME (200 ms/div) Figure 21. Load Transients Figure 22. Load Transients Vin, (10 V/div) 13.5 V 0V 0V Vout, (2 V/div) Vin, (10 V/div) 13.5 V Vout, (2 V/div) TJ = 25°C Vin = 13.5 V Cout = 10 mF trise/fall = 1 ms (Iout) Vout(nom) = 3.3 V 100 mA Iout, (50 mA/div) Iout, (50 mA/div) Figure 20. Line Transients TJ = 25°C Vin = 13.5 V Cout = 10 mF trise/fall = 1 ms (Iout) Vout(nom) = 5.0 V 100 mA TJ = 25°C Iout = 1 mA Cout = 10 mF trise/fall = 1 ms (Vin) Vout(nom) = 3.3 V 26 V TJ = 25°C Iout = 1 mA Cout = 10 mF trise/fall = 100 ms (Vin) Vout(nom) = 5.0 V TIME (100 ms/div) TJ = 25°C Iout = 1 mA Cout = 10 mF trise/fall = 100 ms (Vin) Vout(nom) = 3.3 V TIME (100 ms/div) Figure 23. Power Up/Down Response Figure 24. Power Up/Down Response www.onsemi.com 8 NCV8774C TYPICAL CHARACTERISTICS 120 120 100 100 Iout = 100 mA PSRR (dB) 40 20 0 10 Iout = 100 mA Vin = 13.5 V $ 0.5 Vpp Cout = 1 mF Vout(nom) = 5.0 V 100 60 40 20 1000 10000 f, FREQUENCY (Hz) Iout = 100 mA 80 60 0 10 100000 1000000 Iout = 100 mA Vin = 13.5 V $ 0.5 Vpp Cout = 1 mF Vout(nom) = 3.3 V Figure 25. PSRR vs. Frequency 100 1000 10000 f, FREQUENCY (Hz) TJ = 25°C Vin = 13.5 V Cout = 1 mF Iout = 100 mA 5000 4000 3000 2000 1000 0 10 100000 1000000 Figure 26. PSRR vs. Frequency 6000 NOISE DENSITY (nV/√Hz) PSRR (dB) 80 100 1000 10000 f, FREQUENCY (Hz) Figure 27. Noise vs. Frequency www.onsemi.com 9 100000 NCV8774C DEFINITIONS General Current Limit and Short Circuit Current Limit All measurements are performed using short pulse low duty cycle techniques to maintain junction temperature as close as possible to ambient temperature. Current Limit is value of output current by which output voltage drops below 96% of its nominal value. Short Circuit Current Limit is output current value measured with output of the regulator shorted to ground. Output voltage The output voltage parameter is defined for specific temperature, input voltage and output current values or specified over Line, Load and Temperature ranges. PSRR Power Supply Rejection Ratio is defined as ratio of output voltage and input voltage ripple. It is measured in decibels (dB). Line Regulation The change in output voltage for a change in input voltage measured for specific output current over operating ambient temperature range. Line Transient Response Typical output voltage overshoot and undershoot response when the input voltage is excited with a given slope. Load Regulation The change in output voltage for a change in output current measured for specific input voltage over operating ambient temperature range. Load Transient Response Typical output voltage overshoot and undershoot response when the output current is excited with a given slope between low−load and high−load conditions. Dropout Voltage The input to output differential at which the regulator output no longer maintains regulation against further reductions in input voltage. It is measured when the output drops 100 mV below its nominal value. The junction temperature, load current, and minimum input supply requirements affect the dropout level. Thermal Protection Quiescent and Disable Currents Maximum Package Power Dissipation Quiescent Current (Iq) is the difference between the input current (measured through the LDO input pin) and the output load current. The power dissipation level is maximum allowed power dissipation for particular package or power dissipation at which the junction temperature reaches its maximum operating value, whichever is lower. Internal thermal shutdown circuitry is provided to protect the integrated circuit in the event that the maximum junction temperature is exceeded. When activated at typically 175°C, the regulator turns off. This feature is provided to prevent failures from accidental overheating. www.onsemi.com 10 NCV8774C APPLICATIONS INFORMATION can dissipate up to 2.53 W for 1s0p PCB board and 4.49 W for 2s2p PCB board when the ambient temperature (TA) is 25°C. See Figure 28 for RqJA versus PCB area. The power dissipated by the NCV8774C can be calculated from the following equations: The NCV8774C regulator is self−protected with internal thermal shutdown and internal current limit. Typical characteristics are shown in Figures 4 to 27. Input Decoupling (Cin) A ceramic or tantalum 0.1 mF capacitor is recommended and should be connected close to the NCV8774C package. Higher capacitance and lower ESR will improve the overall line and load transient response. If extremely fast input voltage transients are expected then appropriate input filter must be used in order to decrease rising and/or falling edges below 4 V/ms for proper operation. The filter can be composed of several capacitors in parallel. P D + V inǒI q@I outǓ ) I outǒV in * V outǓ or V in(max) + NOTE: P D(max) ) ǒV out I outǓ I out ) I q (eq. 3) Items containing Iq can be neglected if Iout >> Iq. RqJA, THERMAL RESISTANCE (°C/W) 110 100 Output Decoupling (Cout) The NCV8774C is a stable component and does not require a minimum Equivalent Series Resistance (ESR) for the output capacitor. Stability region of ESR vs Output Current is shown in Figures 17 to 18. The minimum output decoupling value is 1 mF and can be augmented to fulfill stringent load transient requirements. The regulator works with ceramic chip capacitors as well as tantalum devices. Larger values improve noise rejection and load regulation transient response. Thermal Considerations As power in the NCV8774C increases, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. When the NCV8774C has good thermal conductivity through the PCB, the junction temperature will be relatively low with high power applications. The maximum dissipation the NCV8774C can handle is given by: P D(max) + (eq. 2) ƪTJ(max) * TAƫ 90 80 70 1 oz, Single Layer 60 2 oz, Single Layer 50 40 1 oz, 4 Layer 30 20 2 oz, 4 Layer 10 0 0 200 400 600 800 COPPER HEAT SPREADER (mm2) Figure 28. Thermal Resistance vs. PCB Copper Area Hints Vin and GND printed circuit board traces should be as wide as possible. When the impedance of these traces is high, there is a chance to pick up noise or cause the regulator to malfunction. Place external components, especially the output capacitor, as close as possible to the NCV8774C and make traces as short as possible. The NCV8774C is not developed in compliance with ISO26262 standard. If application is safety critical then the below application example diagram shown in Figure 29 can be used. (eq. 1) R qJA Since TJ is not recommended to exceed 150°C, then the NCV8774C soldered on 645 mm2, 1 oz copper area, FR4 VBAT Vout Vin Cin 0.1 μF NCV8774C 1000 Cout 1 μF GND VCC Voltage Supervisor VDD Microprocessor (e.g. NCV30X, NCV809) GND RESET Figure 29. NCV8774C Application Diagram www.onsemi.com 11 I/O NCV8774C ORDERING INFORMATION Output Voltage Marking Package Shipping† NCV8774CDT50RKG 5.0 V 8774C5G DPAK−3 (Pb−Free) 2500 / Tape & Reel NCV8774CDT33RKG 3.3 V 8774C3G DPAK−3 (Pb−Free) 2500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 12 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 4 1 2 DATE 21 JUL 2015 3 SCALE 1:1 A E b3 B c2 4 L3 Z D 1 L4 C A 2 3 NOTE 7 b2 e c SIDE VIEW b 0.005 (0.13) TOP VIEW H DETAIL A M BOTTOM VIEW C Z H L2 GAUGE PLANE C L L1 DETAIL A Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. ANODE 3. RESISTOR ADJUST 3. CATHODE 4. CATHODE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− GENERIC MARKING DIAGRAM* XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. 6.17 0.243 SCALE 3:1 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z XXXXXX A L Y WW G 3.00 0.118 1.60 0.063 STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON10527D DPAK (SINGLE GAUGE) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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