NDB7060

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. May 1996 NDP7060 / NDB7060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. 75A, 60V. RDS(ON) = 0.013Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. ________________________________________________________________________________ D G S Absolute Maximum Ratings T C = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage NDP7060 60 V VDGR Drain-Gate Voltage (RGS < 1 MΩ) 60 V VGSS Gate-Source Voltage - Continuous ± 20 V ID Drain Current - Nonrepetitive (tP < 50 µs) PD NDB7060 Units ± 40 - Continuous 75 - Pulsed 225 Maximum Power Dissipation @ TC = 25°C 150 W 1 W/°C -65 to 175 °C 275 °C Derate above 25°C TJ,TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds © 1997 Fairchild Semiconductor Corporation A NDP7060.SAM Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units 550 mJ 75 A 250 µA DRAIN-SOURCE AVALANCHE RATINGS (Note 1) W DSS Single Pulse Drain-Source Avalanche Energy IAR Maximum Drain-Source Avalanche Current VDD = 25 V, ID = 75 A OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V 60 V 1 mA IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA V TJ = 125°C ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA TJ = 125°C RDS(ON) Static Drain-Source On-Resistance 2 2.8 4 1.4 2.1 3.6 0.01 0.013 0.015 0.024 VGS = 10 V, ID = 40 A TJ = 125°C ID(on) On-State Drain Current VGS = 10 V, VDS = 10 V 75 gFS Forward Transconductance VDS = 10 V, ID = 37.5 A 15 Ω A 39 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2960 3600 pF 1130 1600 pF 380 800 pF 17 30 nS 128 400 nS SWITCHING CHARACTERISTICS (Note 1) tD(on) Turn - On Delay Time tr Turn - On Rise Time VDD = 30 V, ID = 75 A, VGS = 10 V, RGEN = 5 Ω tD(off) Turn - Off Delay Time 54 80 nS tf Turn - Off Fall Time 90 200 nS Qg Total Gate Charge 100 115 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 48 V, ID = 75 A, VGS = 10 V 14.5 nC 51 nC NDP7060.SAM Electrical Characteristics Symbol (TC = 25°C unless otherwise noted) Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS IS Maximum Continuos Drain-Source Diode Forward Current 75 A ISM Maximum Pulsed Drain-Source Diode Forward Current 225 A VSD Drain-Source Diode Forward Voltage V VGS = 0 V, IS = 37.5 A (Note 1) 0.9 1.3 0.84 1.2 40 76 150 ns 2 4.7 10 A 1 °C/W 62.5 °C/W TJ = 125°C trr Reverse Recovery Time Irr Reverse Recovery Current VGS = 0 V, IF = 75 A, dIF/dt = 100 A/µs THERMAL CHARACTERISTICS RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient Note: 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP7060.SAM Typical Electrical Characteristics 2.5 120 1 0 8.0 7.0 100 V GS = 5.0V 6.5 R DS(on), NORMALIZED 80 6.0 60 5.5 40 5.0 20 4.5 4.0 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) VGS =20V 0 1 2 3 V DS , DRAIN-SOURCE VOLTAGE (V) 4 10 12 20 0 20 40 60 80 I D , DRAIN CURRENT (A) 100 120 1.8 I D = 40A 1.8 V GS = 10V V GS = 10V R DS(on), NORMALIZED 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 TJ , JUNCTION TEMPERATURE (°C) 150 DRAIN-SOURCE ON-RESISTANCE R DS(ON), NORMALIZED 8.0 1 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current 2 DRAIN-SOURCE ON-RESISTANCE 7.0 1.5 5 Figure 1. On-Region Characteristics TJ = 125°C 1.6 1.4 1.2 25°C 1 0.8 -55°C 0.6 175 0 Figure 3. On-Resistance Variation with Temperature 20 40 60 80 I D , DRAIN CURRENT (A) 100 120 Figure 4. On-Resistance Variation with Drain Current and Temperature 1.2 V DS = 10V 50 V GS(th) , NORMALIZED T = -55°C J 40 125°C 25°C 30 20 10 0 2 3 4 5 6 V GS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics 7 GATE-SOURCE THRESHOLD VOLTAGE 60 I D , DRAIN CURRENT (A) 6.5 0.5 0 5.5 6.0 2 VDS = VGS 1.1 I D = 250µA 1 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 TJ , JUNCTION TEMPERATURE (°C) 150 175 Figure 6. Gate Threshold Variation with Temperature NDP7060.SAM Typical Electrical Characteristics (continued) 100 50 I D = 250µA 1.1 I S , REVERSE DRAIN CURRENT (A) BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE 1.15 1.05 1 0.95 0.9 -50 -25 0 25 50 75 100 125 TJ , JUNCTION TEMPERATURE (°C) 150 T J = 125°C 1 25°C -55°C 0.1 0.01 0.001 0.2 175 Figure 7. Breakdown Voltage Variation with Temperature 0.4 0.6 0.8 1 1.2 V SD , BODY DIODE FORWARD VOLTAGE (V) 20 I D = 75A VGS , GATE-SOURCE VOLTAGE (V) Ciss 3000 2000 Coss 1000 f = 1 MHz 500 V GS = 0V Crss 300 V DS = 12V 15 48V 24V 10 5 200 0 1 2 5 10 20 30 60 0 25 50 V DS , DRAIN TO SOURCE VOLTAGE (V) 100 t on t d(on) t d(off) tf 90% 90% V OUT VO U T 10% R GEN 150 to f f tr RL D 125 Figure 10. Gate Charge Characteristics VDD V IN 75 Q g , GATE CHARGE (nC) Figure 9. Capacitance Characteristics VGS 1.4 Figure 8. Body Diode Forward Voltage Variation with Current and Temperature 5000 CAPACITANCE (pF) V GS = 0V 10 10% INVERTED DUT G 90% V IN S 50% 50% 10% PULSE W IDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms NDP7060.SAM Typical Electrical Characteristics (continued) 300 60 TJ = -55°C R DS(O 100 50 I D , DRAIN CURRENT (A) 25°C 40 125°C 30 20 N) Lim it 10 0µ s 1m s 10 ms 10 0m s DC 30 10 V GS = 20V 3 SINGLE PULSE 10 1 0 0.3 R θJC = 1 o C/W T C = 25°C g FS , TRANSCONDUCTANCE (SIEMENS) VDS = 10V 0 10 20 30 40 50 60 1 2 3 5 10 20 30 60 100 V DS , DRAIN-SOURCE VOLTAGE (V) I D , DRAIN CURRENT (A) Figure 14. Maximum Safe Operating Area Figure 13. Transconductance Variation with Drain Current and Temperature r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.3 R θJC (t) = r(t) * RθJC R θJC = 1.0 °C/W 0.2 0.2 0.1 0.1 P(pk) 0.05 0.05 t1 0.02 0.03 0.02 0.01 Single Pulse 0.01 0.01 0.05 t2 TJ - T C = P * R θ JC (t) Duty Cycle, D = t1 /t2 0.1 0.5 1 5 t 1 ,TIME (ms) 10 50 100 500 1000 Figure 15. Transient Thermal Response Curve NDP7060.SAM TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ISOPLANAR™ MICROWIRE™ POP™ PowerTrench  QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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