NDD60N360U1-35G

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Other names and brands may be claimed as the property of others. NDD60N360U1 N-Channel Power MOSFET 600 V, 360 mW Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol NDD Unit Drain−to−Source Voltage VDSS 600 V Gate−to−Source Voltage VGS ±25 V ID 11 A Continuous Drain Current RqJC Steady State Power Dissipation – RqJC Steady State TC = 25°C TC = 100°C 114 W IDM 44 A TJ, TSTG −55 to +150 °C IS 13 A Single Pulse Drain−to−Source Avalanche Energy (ID = 3.5 A) EAS 64 mJ RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 15) VISO − V Peak Diode Recovery (Note 1) dv/dt 15 V/ns TL 260 °C tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Leads Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. ISD ≤ 13 A, di/dt ≤ 400 A/ms, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS THERMAL RESISTANCE Parameter Symbol Value Unit Junction−to−Case (Drain) RqJC 1.1 °C/W Junction−to−Ambient Steady State (Note 3) NDD60N360U1 (Note 2) NDD60N360U1−1 (Note 2) NDD60N360U1−35G RqJA January, 2014 − Rev. 0 600 V 360 mW @ 10 V N−Channel MOSFET D (2) G (1) S (3) 4 1 2 3 IPAK CASE 369D 4 4 1 2 3 DPAK CASE 369C 1 2 3 IPAK CASE 369AD °C/W 47 98 95 MARKING AND ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. 2. Insertion mounted 3. Surface mounted on FR4 board using 1″ sq. pad size (Cu area = 1.127 in sq [2 oz] including traces) © Semiconductor Components Industries, LLC, 2014 RDS(ON) MAX 6.9 PD Pulsed Drain Current TC = 25°C V(BR)DSS 1 Publication Order Number: NDD60N360U1/D NDD60N360U1 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Conditions Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 1 mA 600 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Reference to 25°C, ID = 1 mA Characteristic Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Leakage Current Gate−to−Source Leakage Current IDSS VDS = 600 V, VGS = 0 V IGSS V 560 mV/°C TJ = 25°C 1 TJ = 125°C 100 VGS = ±25 V ±100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient Static Drain-to-Source On Resistance Forward Transconductance VGS(TH) VDS = VGS, ID = 250 mA VGS(TH)/TJ Reference to 25°C, ID = 250 mA 2 3.2 8.6 4 V RDS(on) VGS = 10 V, ID = 5.5 A 320 gFS VDS = 15 V, ID = 5.5 A 10 S 790 pF mV/°C 360 mW DYNAMIC CHARACTERISTICS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Effective output capacitance, energy related (Note 6) Co(er) Effective output capacitance, time related (Note 7) Co(tr) VDS = 50 V, VGS = 0 V, f = 1 MHz 47 3.0 VGS = 0 V, VDS = 0 to 480 V ID = constant, VGS = 0 V, VDS = 0 to 480 V 38.9 135 nC Total Gate Charge Qg 26 Gate-to-Source Charge Qgs 4.7 Gate-to-Drain Charge Qgd Plateau Voltage VGP 5.6 V Gate Resistance Rg 4.5 W 10 ns VDS = 300 V, ID = 13 A, VGS = 10 V 12.9 RESISTIVE SWITCHING CHARACTERISTICS (Note 5) Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time td(on) tr td(off) VDD = 300 V, ID = 13 A, VGS = 10 V, RG = 0 W tf 20 26 22 SOURCE−DRAIN DIODE CHARACTERISTICS Diode Forward Voltage VSD Reverse Recovery Time trr Charge Time ta Discharge Time tb Reverse Recovery Charge Qrr IS = 13 A, VGS = 0 V TJ = 25°C 0.93 TJ = 100°C 0.86 303 VGS = 0 V, VDD = 30 V IS = 13 A, di/dt = 100 A/ms 1.6 V ns 206 97 3.6 mC 4. Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperatures. 6. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS 7. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. http://onsemi.com 2 NDD60N360U1 MARKING DIAGRAMS 4 Drain 4 Drain YWW 60N 360U1G YWW 60N 360U1G YWW 60N 360U1G 4 Drain 1 2 3 Gate Drain Source IPAK Y WW G 1 2 3 Gate Drain Source 2 1 Drain 3 Gate Source IPAK DPAK = Year = Work Week = Pb−Free Package ORDERING INFORMATION Package Shipping† NDD60N360U1−1G IPAK (Pb-Free, Halogen-Free) 75 Units / Rail NDD60N360U1−35G IPAK (Pb-Free, Halogen-Free) 75 Units / Rail NDD60N360U1T4G DPAK (Pb-Free, Halogen-Free) 2500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 3 NDD60N360U1 TYPICAL CHARACTERISTICS ID, DRAIN CURRENT (A) VGS = 10 V to 6.5 V VGS = 6.0 V VGS = 5.5 V VGS = 5.0 V VGS = 4.5 V VGS = 4.0 V 5 10 15 20 25 30 0.65 0.60 0.55 0.50 0.45 0.40 0.35 5 6 7 8 9 10 VGS, GATE VOLTAGE (V) Figure 3. On−Resistance vs. Gate−to−Source Voltage RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 2.7 2.3 ID = 5.5 A VGS = 10 V 2.1 1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.5 −50 VDS = 15 V TJ = 150°C 0 2 4 6 8 10 Figure 2. Transfer Characteristics TJ = 25°C ID = 5.5 A 2.5 TJ = 25°C Figure 1. On−Region Characteristics 0.70 4 TJ = −55°C VGS, GATE−TO−SOURCE VOLTAGE (V) 0.75 0.30 0.25 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) 150 BVDSS, NORMALIZED BREAKDOWN VOLTAGE RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 0.75 0.70 TJ = 25°C VGS = 10 V 0.65 0.60 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 ID, DRAIN CURRENT (A) Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.125 1.100 ID = 1 mA 1.075 1.050 1.025 1.000 0.975 0.950 0.925 −50 Figure 5. On−Resistance Variation with Temperature −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Breakdown Voltage Variation with Temperature http://onsemi.com 4 150 NDD60N360U1 1.15 100,000 ID = 250 mA IDSS, LEAKAGE (nA) 1.05 1.00 0.95 0.90 0.85 0.80 0.70 0.65 −50 −25 0 25 50 75 100 100 TJ = 100°C 0 100 200 300 400 500 Figure 7. Threshold Voltage Variation with Temperature Figure 8. Drain−to−Source Leakage Current vs. Voltage COSS VGS = 0 V TJ = 25°C f = 1 MHz 100 10 0.1 14 350 QT 12 300 10 CRSS 1 10 100 1000 250 VDS 8 VGS QGS 150 4 100 VDS = 300 V TJ = 25°C ID = 13 A 2 0 200 QGD 6 0 4 8 12 16 20 24 50 28 0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 9. Capacitance Variation Figure 10. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 1000 100 VGS = 10 V VDD = 300 V td(off) 10 t, TIME (ns) TJ = 150°C TJ = 125°C TJ = 100°C TJ = 25°C 1 0.1 600 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 1 10 TJ, JUNCTION TEMPERATURE (°C) CISS IS, SOURCE CURRENT (A) TJ = 125°C 150 125 TJ = 150°C 1000 0.75 10,000 C, CAPACITANCE (pF) 10,000 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1.10 VGS, GATE−TO−SOURCE VOLTAGE (V) VGS(th), NORMALIZED THRESHOLD VOLTAGE TYPICAL CHARACTERISTICS TJ = −55°C 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 100 tr td(on) 10 1 1.2 tf 0.1 1 10 100 VSD, SOURCE−TO−DRAIN VOLTAGE (V) RG, GATE RESISTANCE (W) Figure 11. Diode Forward Voltage vs. Current Figure 12. Resistive Switching Time Variation vs. Gate Resistance http://onsemi.com 5 NDD60N360U1 TYPICAL CHARACTERISTICS ID, DRAIN CURRENT (A) 100 VGS ≤ 25 V Single Pulse TC = 25°C 10 10 ms 100 ms 1 1 ms 10 ms dc 0.1 0.01 RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 100 1000 R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 13. Maximum Rated Forward Biased Safe Operating Area NDD60N360U1 10 1 0.1 RqJC steady state = 1.1°C/W Duty Cycle = 0.5 0.20 0.10 0.05 0.02 Single Pulse 0.01 0.001 0.01 1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 1E+01 t, TIME (s) Figure 14. Thermal Impedance (Junction−to−Case) for NDD60N360U1 http://onsemi.com 6 1E+02 1E+03 NDD60N360U1 PACKAGE DIMENSIONS IPAK CASE 369D−01 ISSUE C C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 A S 1 2 DIM A B C D E F G H J K R S V Z Z 3 −T− SEATING PLANE K J F D G H 3 PL 0.13 (0.005) M INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T 3.5 MM IPAK, STRAIGHT LEAD CASE 369AD ISSUE B E E3 L2 E2 A1 D2 D L1 L T SEATING PLANE A A1 b1 2X e A2 3X E2 b 0.13 M T D2 OPTIONAL CONSTRUCTION http://onsemi.com 7 NOTES: 1.. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2.. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30mm FROM TERMINAL TIP. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD GATE OR MOLD FLASH. DIM A A1 A2 b b1 D D2 E E2 E3 e L L1 L2 MILLIMETERS MIN MAX 2.19 2.38 0.46 0.60 0.87 1.10 0.69 0.89 0.77 1.10 5.97 6.22 4.80 −−− 6.35 6.73 4.57 5.45 4.45 5.46 2.28 BSC 3.40 3.60 −−− 2.10 0.89 1.27 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN NDD60N360U1 PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C−01 ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) H C M L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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