NDFP03N150CG

Ordering number : ENA2232 NDFP03N150C N-Channel Power MOSFET 1500V, 2.5A, 10.5Ω, TO-220F-3FS http://onsemi.com Features • On-resistance RDS(on)=8Ω(typ.) • Input Capacitance Ciss=650pF(typ.) • 10V drive Specifications TO-220F-3FS Absolute Maximum Ratings at Ta = 25°C Parameter Drain to Source Voltage Symbol Conditions Ratings Unit VDSS 1500 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID 2.5 A Drain Current (DC) Limited by Package IDL 2 A Drain Current (Pulse) IDP Allowable Power Dissipation PW≤10μs, duty cycle≤1% PD Tc=25°C 5 A 2 W 32 W °C Channel Temperature Tch 150 Storage Temperature Tstg - 55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS 20 mJ Avalanche Current *2 IAV 2 A 1 * VDD=50V, L=10mH, IAV=2A (Fig.1) *2 L≤10mH, Single Pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta = 25°C Ratings Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V(BR)DSS ID=10mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=1200V, VGS=0V 1500 V Gate to Source Leakage Current IGSS VGS=±30V, VDS=0V Cutoff Voltage VGS(off) VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=20V, ID=1A 1.9 Static Drain to Source On-State Resistance RDS(on) ID=1A, VGS=10V 8 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 2 650 1 mA ±100 nA 4 V 10.5 Ω S pF 70 pF Crss 20 pF Turn-ON Delay Time td(on) 15 ns Rise Time tr 20 ns Turn-OFF Delay Time td(off) 148 ns Fall Time tf 44 ns VDS=30V, f=1MHz See Fig.2 Continued on next Page. ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. Semiconductor Components Industries, LLC, 2013 November, 2013 N1313 TKIM TC-00003050 No. A2232-1/5 NDFP03N150C Continued from preceding Page. Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD IS=2A, VGS=0V 0.78 Reverse Recovery Time trr See Fig.3 300 ns Reverse Recovery Charge Qrr IS=2A, VGS=0V, di/dt=100A/μs 1900 nC VDS=200V, VGS=10V, ID=2A 34 nC 4.7 nC 15 nC V Forward Transfer Admittance, | yfs | -- S 1.5 No.A2232-2/5 NDFP03N150C Operation in this area is limited by RDS(on). No.A2232-3/5 NDFP03N150C Package Dimensions NDFP03N150CG TO-220F-3FS CASE 221AM ISSUE O Unit : mm 1: Gate 2: Drain 3: Source Ordering & Package Information Device NDFP03N150CG Marking Package Shipping note TO-220F-3FS SC-67, 50 pcs. / tube Pb-Free Electrical Connection 2 03N150 C LOT No. 1 3 No.A2232-4/5 NDFP03N150C Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit Fig.3 Reverse Recovery Time Test Circuit Note on usage : Since the NDFP03N150C is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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