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product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
Intelligent Power Module (IPM)
1200 V, 5 A
Advance Information
NFAM0512L5B
General Description
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The NFAM0512L5B is a fully−integrated inverter power module
consisting of an independent High side gate driver, LVIC, six IGBT’s
and a temperature sensor (VTS), suitable for driving permanent
magnet synchronous (PMSM) motors, brushless DC (BLDC) motors
and AC asynchronous motors. The IGBT’s are configured in a
three−phase bridge with separate emitter connections for the lower
legs for maximum flexibility in the choice of control algorithm.
The power stage has under−voltage lockout protection (UVP).
Internal boost diodes are provided for high side gate boost drive.
Features
•
•
•
•
•
•
•
•
Three−phase 1200 V, 5 A IGBT Module with Independent Drivers
Active Logic Interface
Built−in Under−voltage Protection (UVP)
Integrated Bootstrap Diodes and Resistors
Separate Low−side IGBT Emitter Connections for Individual Current
Sensing of Each Phase
Temperature Sensor (VTS)
UL1557 Certified (File No.339285)
This Device is Pb−Free and RoHS Compliant
DIP39, 54.5x31.0 EP−2
CASE MODGX
MARKING DIAGRAM
NFAM0512L5B
ZZZATYWW
Typical Application
•
•
•
•
Industrial Drives
Industrial Pumps
Industrial Fans
Industrial Automation
Device marking is on package top side
P
VS(U)
VB(U)
VDD(UH)
HIN(U)
VS(V)
VB(V)
VDD(VH)
HIN(V)
VS(W)
VB(W)
VDD(WH)
HIN(W)
VTS
LIN(U)
LIN(V)
LIN(W)
VFO
CFOD
CIN
VSS
VDD(L)
High Side
HVIC1
HS1
High Side
HVIC2
HS2
High Side
HVIC 3
HS3
HS1
V
HS2
HS3
W
ORDERING INFORMATION
Device
LS2
LS1
Low Side
LVIC
with
Protection
U
NFAM0512L5B = Specific Device Code
ZZZ
= Assembly Lot Code
A
= Assembly Location
T
= Test Location
Y
= Year
WW
= Work Week
Package
Shipping†
(Qty / Packing)
LS3
NFAM0512L5B DIP39, 31.0x54.5
(Pb−Free)
LS1
LS2
90 / BOX
LS3
NU
NV
NW
Figure 1. Application Schematic
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2020
March, 2020 − Rev. P0
1
Publication Order Number:
NFAM0512L5B/D
NFAM0512L5B
APPLICATION SCHEMATIC
VB(U) (3)
N.C (38)
P (37)
VS(U) (1)
HIN (U) (6)
VDD(UH) (4)
CS
VB
HIN
HOUT
HVIC 1
VDD
VSS
VS
+
C1
U (36)
VB(V) (9)
VS(V) (7)
HIN (V) (12)
VDD(VH) (10)
VB
HOUT
VDD HVIC 2
HIN
VSS
VS
HIN
VB
HOUT
HVIC 3
V (35)
Motor
VB(W) (15)
VS(W) (13)
MCU
HIN (W) (18)
VDD(WH) (16)
VDD
VSS
W (34)
VS
VTS (20)
VTS
LIN(U) (21)
OUT(U)
LIN(U)
LIN(V) (22)
NU (33)
LIN(V)
LIN(W) (23)
LIN(W)
5V line
LVIC
VFO (24)
VFO
CFOD (25)
CIN (26)
15V line
VDD(L) (28)
VSS (27)
OUT(V)
NV (32)
CFOD
CIN
VDD
VSS
OUT(W)
NW (31)
Signal for short circuit trip
Phase current
Figure 2. Application Schematic − Adjustable Option
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2
NFAM0512L5B
BLOCK DIAGRAM
N.C (38)
VS(U) (1)
P (37)
VB(U) (3)
VB
VDD(UH) (4)
HIN(U) (6)
HOUT
VDD
HVIC 1
HIN
VSS
VS
VDD
HOUT
U (36)
VS(V) (7)
VB(V) (9)
VB
VDD(VH) (10)
HIN(V) (12)
HVIC 2
HIN
VSS
VS
VDD
HOUT
V (35)
VS(W) (13)
VB(W) (15)
VB
VDD(WH) (16)
HIN(W) (18)
HVIC 3
HIN
VTS (20)
LIN(U)
LIN(V) (22)
LIN(V)
LIN(W) (23)
LIN(W)
VFO (24)
CFOD (25)
OUT(U)
VTS
LIN(U) (21)
VFO
W (34)
VS
VSS
NU (33)
LVIC
OUT(V)
CFOD
CIN (26)
CIN
VSS (27)
VSS
VDD(L) (28)
VDD
NV (32)
OUT(W)
NW (31)
Figure 3. Equivalent Block Diagram
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3
NFAM0512L5B
PIN FUNCTION DESCRIPTION
Pin
Name
1
VS(U)
(2)
−
3
VB(U)
Description
High−Side Bias Voltage GND for U Phase IGBT Driving
Dummy
High−Side Bias Voltage for U Phase IGBT Driving
4
VDD(UH)
(5)
−
High−Side Bias Voltage for U Phase IC
6
HIN(U)
Signal Input for High−Side U Phase
7
VS(V)
High−Side Bias Voltage GND for V Phase IGBT Driving
(8)
−
9
VB(V)
Dummy
Dummy
High−Side Bias Voltage for V Phase IGBT Driving
10
VDD(VH)
(11)
−
High−Side Bias Voltage for V Phase IC
12
HIN(V)
Signal Input for High−Side V Phase
13
VS(W)
High−Side Bias Voltage GND for W Phase IGBT Driving
(14)
−
15
VB(W)
Dummy
Dummy
High−Side Bias Voltage for W Phase IGBT Driving
16
VDD(WH)
(17)
−
High−Side Bias Voltage for W Phase IC
18
HIN(W)
(19)
−
20
VTS
21
LIN(U)
Signal Input for Low−Side U Phase
22
LIN(V)
Signal Input for Low−Side V Phase
23
LIN(W)
Signal Input for Low−Side W Phase
24
VFO
25
CFOD
26
CIN
Input for Current Protection
27
VSS
Low−Side Common Supply Ground
Dummy
Signal Input for High−Side W Phase
Dummy
Voltage Output for LVIC Temperature Sensing Unit
Fault Output
Capacitor for Fault Output Duration Selection
28
VDD(L)
(29)
−
Low−Side Bias Voltage for IC and IGBTs Driving
Dummy
(30)
−
Dummy
31
NW
Negative DC−Link Input for U Phase
32
NV
Negative DC−Link Input for V Phase
33
NU
Negative DC−Link Input for W Phase
34
W
Output for U Phase
35
V
Output for V Phase
36
U
Output for W Phase
37
P
Positive DC−Link Input
38
N.C
(39)
−
No Connection
Dummy
1. Pins of () are the dummy for internal connection. These pins should be no connection.
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4
NFAM0512L5B
ABSOLUTE MAXIMUM RATINGS (TC = 25°C) (Note 2)
Rating
Symbol
Supply Voltage
VPN
Conditions
Value
Unit
P − NU, NV, NW
900
V
Supply Voltage (Surge)
VPN(Surge)
P − NU, NV, NW, (Note 3)
1000
V
Self Protection Supply Voltage Limit
(Short−Circuit Protection Capability
VPN(PROT)
VDD = VBS = 13.5 V ~ 16.5 V,
Tj = 150°C, Vces < 1200 V,
Non−Repetitive, < 2 ms
800
V
Vces
1200
V
VRRM
1200
V
±Ic
±5
A
Collector−Emitter Voltage
Maximum Repetitive Revers Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
±Icp
Under 1 ms Pulse Width
±10
A
Control Supply Voltage High−Side
Control Bias Voltage
VDD
VDD(UH, VH, WH), VDD(L) − VSS
−0.3 to 20
V
VBS
VB(U) − VS(U), VB(V) − VS(V),
VB(W) − VS(W)
−0.3 to 20
V
Input Signal Voltage
VIN
HIN(U), HIN(V), HIN(W), LIN(U), LIN(V),
LIN(W) − VSS
−0.3 to VDD
V
Fault Output Supply Voltage
VFO
VFO − VSS
−0.3 to VDD
V
IFO
Sink Current at VFO pin
Fault Output Current
Current Sensing Input Voltage
VCIN
CIN − VSS
2
mA
−0.3 to VDD
V
59
W
Corrector Dissipation
Pc
Operating Junction Temperature
Ti
−40 to +150
°C
Tstg
−40 to +125
°C
Tc
−40 to +125
°C
2500
V rms
Storage Temperature
Module Case Operation Temperature
Isolation Voltage
Per One Chip
Viso
60 Hz, Sinusoidal, AC 1 minute,
Connection Pins to Heat Sink Plate
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
3. This surge voltage developed by the switching operation due to the wiring inductance between P and NU, NV, NW terminal.
THERMAL CHARACTERISTICS
Rating
Junction to Case Thermal
Resistance
Symbol
Conditions
Min
Typ
Max
Unit
Rth(j−c)Q
Inverter IGBT Part (per 1/6 Module)
−
−
2.1
°C/W
Rth(j−c)F
Inverter FRD Part (per 1/6 Module)
−
−
2.6
°C/W
4. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
RECOMMENDED OPERATING RANGES (Note 6)
Rating
Symbol
Conditions
Min
Typ
Max
Unit
−
600
800
V
Supply Voltage
VPN
P − NU, NV, NW
Gate Driver Supply Voltages
VDD
VDD(UH, VH, WH), VDD(L) − VSS
13.5
15
16.5
V
VBS
VB(U) − VS(U), VB(V) − VS(V),
VB(W) − VS(W)
13.0
15
18.5
V
dVDD / dt
dVBS / dt
−1
−
1
V/ms
fPWM
1
20
kHz
−
ms
Supply Voltage Variation
PWM Frequency
Dead Time
DT
Turn−off to Turn−on (external)
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5
3
−
NFAM0512L5B
RECOMMENDED OPERATING RANGES (Note 6) (continued)
Rating
Allowable r.m.s. Current
Allowable Input Pulse Width
Symbol
Io
PWIN (on)
PWIN (off)
Package Mounting Torque
Conditions
Min
Typ
Max
Unit
fPWM =
5 kHz
−
−
7.7
A rms
fPWM =
15 kHz
−
−
4.0
400 V ≤ VPN ≤ 800 V,
13.5 V ≤ VDD ≤ 16.5 V,
13.0 V ≤ VBS ≤ 18.5 V,
−40°C ≤ Tc ≤ 150°C
2.0
−
−
2.5
−
−
M3 Type Screw
0.6
0.7
0.9
VPN = 600 V,
VDD = VBS = 15 V,
P.F. = 0.8,
Tc ≤ 125°C, Tj ≤ 150°C,
(Note 5)
ms
Nm
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
5. Allowable r.m.s Current depends on the actual conditions.
6. Flatness tolerance of the heatsink should be within −50 mm to +100 mm.
ELECTRICAL CHARACTERISTICS (Tc = 25°C, VDD = 15 V, VBS = 15 V, unless otherwise noted) (Note 7)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Ices
−
−
1
mA
−
−
10
mA
−
1.75
2.5
V
−
1.90
−
1.70
−
1.50
ton
0.80
1.40
2.00
ms
tc (on)
−
0.30
0.60
ms
toff
−
2.00
2.70
ms
tc (off)
−
0.20
0.60
ms
INVERTER SECTION
Collector−Emitter Leakage
Current
Vce = Vces, Tj = 25°C
Collector−Emitter Saturation
Voltage
VDD = VBS = 15 V, IN = 5 V
Ic = 5 A, Tj = 25°C
Vce = Vces, Tj = 150°C
VCE(sat)
VDD = VBS = 15 V, IN = 5 V
Ic = 5 A, Tj = 150°C
FWDi Forward Voltage
VF
IN = 0 V, If = 5 A, Tj = 25°C
IN = 0 V, If = 5 A, Tj = 150°C
High Side
Low Side
Switching Times
Switching Times
VPN = 600 V, VDD(H) = VDD(L) = 15 V
Ic = 5 A, Tj = 25°C, IN = 0 ⇔ 5 V
Inductive Load
V
2.5
V
V
trr
−
0.30
−
ms
ton
0.90
1.50
2.10
ms
tc (on)
−
0.30
0.60
ms
toff
−
2.10
2.80
ms
tc (off)
−
0.20
0.60
ms
trr
−
0.40
−
ms
VDD(UH) − VSS
VDD(VH) − VSS
VDD(WH) − VSS
IQDDH
−
−
0.30
mA
VDD(L) − VSS
IQDDL
−
−
3.50
mA
VDD(UH, VH, WH) = 15 V,
fPWM = 20 kHz, Duty = 50%,
Applied to one PWM Signal Input
for High−Side
VDD(UH) − VSS
VDD(VH) − VSS
VDD(WH) − VSS
IPDDH
−
−
0.40
mA
VDD(L) = 15 V,
fPWM = 20 kHz, Duty = 50%,
Applied to one PWM Signal Input
for Low−Side
VDD(L) − VSS
IPDDL
−
−
9.00
mA
VPN = 600 V, VDD(H) = VDD(L) = 15 V
Ic = 5 A, Tj = 25°C, IN = 0 ⇔ 5 V
Inductive Load
DRIVER SECTION
Quiescent VDD Supply Current
VDD(UH,VH,WH) = 15 V,
HIN(U,V,W) = 0 V
VDD(L) = 15 V,
LIN(U, V, W) = 0 V
Operating VDD Supply Current
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NFAM0512L5B
ELECTRICAL CHARACTERISTICS (Tc = 25°C, VDD = 15 V, VBS = 15 V, unless otherwise noted) (Note 7) (continued)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
DRIVER SECTION
Quiescent VBS Supply Current
VBS = 15 V
HIN(U, V, W) = 0 V
VB(U) − VS(U)
VB(V) − VS(V)
VB(W) − VS(W)
IQBS
−
−
0.30
mA
Operating VBS Supply Current
VDD = VBS = 15 V,
fPWM = 20 kHz, Duty = 50%,
Applied to one PWM Signal Input
for High−Side
VB(U) − VS(U)
VB(V) − VS(V)
VB(W) − VS(W)
IPBS
−
−
8.00
mA
ON Threshold Voltage
HIN(U, V, W) − VSS, LIN(U, V, W) − VSS
2.6
V
VIN(ON)
OFF Threshold Voltage
VIN(OF)
0.8
V
Short Circuit Trip Level
VDD = 15 V, CIN−VSS
VCIN(ref)
0.46
0.50
V
Supply Circuit Under−Voltage
Protection
Detection Level
UVDDD
10.3
0.48
12.5
V
Reset Level
UVDDR
10.8
13.0
V
Detection Level
UVBSD
10.0
12.0
V
Reset Level
UVBSR
10.5
12.5
V
Voltage Output for LVIC
Temperature Sensing Unit
VTS−VSS = 10 nF, Temp. = 25°C
VTS
0.905
1.030
1.155
V
Fault Output Voltage
VDD = 0 V, CIN = 0 V,
VFO Circuit: 10 kW to 5 V Pull−up
VFOH
4.9
−
−
V
VDD = 0 V, CIN = 1 V,
VFO Circuit: 10 kW to 5 V Pull−up
VFOL
−
−
0.95
V
CFOD = 22 nF
tFOD
1.6
2.4
−
ms
VF
3.4
4.6
5.8
V
RBOOT
30
38
46
W
Fault−Output Pulse Width
BOOTSTRAP SECTION
Bootstrap Diode Forward Current
If = 0.1 A
Built−in Limiting Resistance
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
7. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at TJ = TA = 25_C. Low
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
8. The fault−out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation:
tFOD = 0.1 x 106 x CFOD (s)
9. Values based on design and/or characterization.
4.0
VTS Output Voltage (V)
3.5
3.0
2.5
2.0
1.5
1.0
40
45
50
55
60
65
70
75
80
85
90
95 100 105 110 115 120 125 130
LVIC Temperature (°C)
Figure 4. Temperature of LVIC versus VOT Characteristics
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7
NFAM0512L5B
PACKAGE DIMENSIONS
DIP39, 54.5x31.0 EP−2
CASE MODGX
ISSUE O
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8
NFAM0512L5B
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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◊
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Phone: 011 421 33 790 2910
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9
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