NJD35N04G

NJD35N04G NPN Darlington Power Transistor This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. Features http://onsemi.com • Exceptional Safe Operating Area • High VCE; High Current Gain • These are Pb−Free Devices Benefits • Reliable Performance at Higher Powers • Designed for Inductive Loads • Very Low Current Requirements Applications DARLINGTON POWER TRANSISTORS 4 AMPERES 350 VOLTS 45 WATTS MARKING DIAGRAM 4 12 • • • • • Internal Combustion Engine Ignition Control Switching Regulators Motor Controls Light Ballast Photo Flash 3 DPAK CASE 369C STYLE 1 YWW NJD 35N04G MAXIMUM RATINGS Rating Collector−Emitter Sustaining Voltage Collector−Base Breakdown Voltage Collector−Emitter Breakdown Voltage Emitter−Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Continuous Peak Symbol VCEO VCBO VCES VEBO IC ICM IB PD TJ, Tstg Value 350 700 700 5.0 4.0 8.0 0.5 45 0.36 − 65 to +150 Unit Vdc Vdc Vdc Vdc Adc Adc W W/°C °C Y = Year WW = Work Week NJD35N04 = Device Code G = Pb−Free Device ORDERING INFORMATION Device NJD35N04G NJD35N04T4G Package DPAK (Pb−Free) DPAK (Pb−Free) Shipping† 75 Units / Rail 2500/Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction−to−Case Junction−to−Ambient Symbol RqJC RqJA Value 2.78 71.4 Unit °C/W © Semiconductor Components Industries, LLC, 2010 July, 2010 − Rev. 2 1 Publication Order Number: NJD35N04/D NJD35N04G ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 10 mA, L = 10 mH) Collector Cutoff Current (VCE = 500 V) (IB = 0) (VCE = 500 V, TC = 125°C) Collector Cutoff Current (VCE = 350 V) (IB = 0) (VCE = 300 V, TC = 125°C) Emitter Cutoff Current (VBE = 5.0 Vdc) ON CHARACTERISTICS Collector−Emitter Saturation Voltage (IC = 2.0 A, IB = 20 mA) (IC = 2.0 A, IB = 20 mA 125°C) Base−Emitter Saturation Voltage (IC = 2.0 A, IB = 20 mA) (IC = 2.0 A, IB = 20 mA 125°C) Base−Emitter On Voltage (IC = 2.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V 125°C) DC Current Gain (IC = 2.0 A, VCE = 2.0 V) (IC = 4.0 A, VCE = 2.0 Vdc) DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 2.0 A, VCE = 10 V, f = 1.0 MHz) Output Capacitance (VCB = 10 V, IE = 0, f = 0.1 MHz) SWITCHING CHARACTERISTICS VCC = 12 V, Vclamp = 250 V, L = 4 mH IC = 2 A, IB1 = 20 mA, IB2 = −20 mA ts tf − − 18 0.8 − − mSec fT Cob 90 − − MHz VCE(sat) − − VCEO(sus) ICES ICEO IEBO 350 − − Vdc Symbol Min Typ Max Unit − − − − − − − − − − 50 250 50 250 5.0 mAdc mAdc mAdc 1.5 Vdc VBE(sat) − − 2.0 Vdc VBE(on) − − 2.0 Vdc hFE 2000 300 − − − − − − 60 − pF C B E 2 KW Figure 1. Darlington Circuit Schematic http://onsemi.com 2 NJD35N04G TYPICAL CHARACTERISTICS 50 PD, POWER DISSIPATION (W) 45 35 30 25 20 15 10 5.0 0 10 10 30 50 70 90 110 130 150 170 T, TEMPERATURE (°C) 0.1 TC hFE, DC CURRENT GAIN 40 10,000 125°C 1000 25°C 100 VCE = 2 V 1.0 IC, COLLECTOR CURRENT (AMPS) 10 Figure 2. Power Derating 4.0 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 25°C 125°C 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) Ic/Ib = 100 2.4 2.0 1.6 Figure 3. DC Current Gain VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 25°C 1.2 0.8 0.4 0 125°C Ic/Ib = 100 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 10 Figure 4. Collector−Emitter Saturation Voltage Figure 5. Base−Emitter Saturation Voltage VBE(on), BASE−EMITTER VOLTAGE (V) 2.0 IC, COLLECTOR CURRENT (A) 10 10 mS 100 mS 1 mS 300 mS 1.6 25°C DC 1.0 1.2 0.1 0.8 125°C 0.4 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 VCE = 2 V 0.01 10 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) 1000 Figure 6. Base−Emitter Voltage Figure 7. Forward Bias Safe Operating Area (FBSOA) http://onsemi.com 3 NJD35N04G PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE D C A B c2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− E b3 L3 1 4 A D 2 3 Z DETAIL A H L4 b2 e b 0.005 (0.13) M c C L2 GAUGE PLANE H C L L1 DETAIL A SEATING PLANE A1 ROTATED 90 CW 5 SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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