NJL4302D

NJL4281D (NPN) NJL4302D (PNP) Complementary ThermalTrakt Transistors The ThermalTrak family of devices has been designed to eliminate thermal equilibrium lag time and bias trimming in audio amplifier applications. They can also be used in other applications as transistor die protection devices. Features http://onsemi.com • • • • • Thermally Matched Bias Diode Instant Thermal Bias Tracking Absolute Thermal Integrity High Safe Operating Area Pb−Free Packages are Available* BIPOLAR POWER TRANSISTORS 15 AMP, 350 VOLT, 230 WATT TO−264, 5 LEAD CASE 340AA STYLE 1 Benefits • Eliminates Thermal Equilibrium Lag Time and Bias Trimming • Superior Sound Quality Through Improved Dynamic Temperature • • • Response Significantly Improved Bias Stability Simplified Assembly ♦ Reduced Labor Costs ♦ Reduced Component Count High Reliability MARKING DIAGRAM SCHEMATIC NJLxxxxDG AYYWW Thermal Trak Applications • High−End Consumer Audio Products • Home Amplifiers Home Receivers Professional Audio Amplifiers ♦ Theater and Stadium Sound Systems ♦ Public Address Systems (PAs) ♦ ♦ NJLxxxxD = Device Code xxxx = 4281 or 4302 G = Pb−Free Package A = Assembly Location YY = Year WW = Work Week ORDERING INFORMATION Device NJL4281D NJL4281DG NJL4302D NJL4302DG *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 Package TO−264 TO−264 (Pb−Free) TO−264 TO−264 (Pb−Free) Shipping 25 Units / Rail 25 Units / Rail 25 Units / Rail 25 Units / Rail 1 June, 2006 − Rev. 2 Publication Order Number: NJL4281D/D NJL4281D (NPN) NJL4302D (PNP) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.5 V Collector Current − Continuous − Peak (Note 1) Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg VR IF(AV) Value 350 350 5 350 15 30 1.5 230 1.84 − 65 to +150 200 1.0 Unit Vdc Vdc Vdc Vdc Adc Adc W W/°C °C V A Base Current − Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C Operating and Storage Junction Temperature Range DC Blocking Voltage Average Rectified Forward Current THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Symbol RqJC Max 0.54 Unit °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%. ATTRIBUTES Characteristic ESD Protection Flammability Rating Human Body Model Machine Model Value >8000 V > 400 V UL 94 V−0 @ 0.125 in http://onsemi.com 2 NJL4281D (NPN) NJL4302D (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector Emitter Sustaining Voltage (IC = 50 mA, IB = 0) Collector Cut−off Current (VCE = 200 V, IB = 0) Collector Cutoff Current (VCB = 350 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) SECOND BREAKDOWN Second Breakdown Collector with Base Forward Biased (VCE = 50 Vdc, t = 1.0 s (non−repetitive) (VCE = 100 Vdc, t = 1.0 s (non−repetitive) ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 1.0 Adc, VCE = 5.0 Vdc) (IC = 3.0 Adc, VCE = 5.0 Vdc) (IC = 5.0 Adc, VCE = 5.0 Vdc) (IC = 8.0 Adc, VCE = 5.0 Vdc) (IC = 15 Adc, VCE = 5.0 Vdc) Collector−Emitter Saturation Voltage (IC = 8.0 Adc, IB = 0.8 Adc) Emitter−Base Saturation Voltage (IC = 8.0 Adc, IB = 0.8 A) Base−Emitter ON Voltage (IC = 8.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1.0 MHz) Maximum Instantaneous Forward Voltage (Note 2) (iF = 1.0 A, TJ = 25°C) (iF = 1.0 A, TJ = 150°C) Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 150°C) Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/ms) 2. Diode Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%. fT 35 Cob − vF 1.1 0.93 iR 10 100 trr 100 ns mA 600 V − pF MHz hFE 80 80 80 80 40 10 VCE(sat) − VBE(sat) − VBE(on) − 1.5 1.4 Vdc 1.0 Vdc 250 250 250 250 − − Vdc − IS/b 4.5 1.0 − − Adc VCE(sus) ICEO ICBO − IEBO − 5.0 50 mAdc 350 − − 100 Vdc mAdc mAdc Symbol Min Max Unit http://onsemi.com 3 NJL4281D (NPN) NJL4302D (PNP) TYPICAL CHARACTERISTICS 1000 1000 hFE, DC CURRENT GAIN TJ = 100°C TJ = 25°C hFE, DC CURRENT GAIN TJ = 100°C 100 TJ = 25°C 100 10 0.01 0.1 1 10 100 10 0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain, VCE = 5 V, NPN NJL4281D 1000 hFE, DC CURRENT GAIN 1000 Figure 2. DC Current Gain, VCE = 5 V, PNP NJL4302D TJ = 100°C TJ = 25°C hFE, DC CURRENT GAIN TJ = 100°C 100 TJ = 25°C 100 10 0.01 0.1 1 10 100 10 0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain, VCE = 20 V, NPN NJL4281D 1.4 SATURATION VOLTAGE (V) SATURATION VOLTAGE (V) 1.2 1 0.8 0.6 0.4 0.2 0 0.01 Vce(sat) TJ = 25°C Ic/Ib = 10 10 100 Vbe(sat) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.01 Figure 4. DC Current Gain, VCE = 20 V, PNP NJL4302D Vbe(sat) Vce(sat) TJ = 25°C Ic/Ib = 10 10 100 0.1 1 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. Typical Saturation Voltage, NPN NJL4281D Figure 6. Typical Saturation Voltage, PNP NJL4302D http://onsemi.com 4 NJL4281D (NPN) NJL4302D (PNP) TYPICAL CHARACTERISTICS 1.4 VBE(on), BASE−EMITTER VOLTAGE (V) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.01 VBE(on), BASE−EMITTER VOLTAGE (V) 2.5 2.0 1.5 1.0 0.5 0.1 1 10 100 0.0 0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 7. Typical Base−Emitter Voltages, NPN NJL4281D Figure 8. Typical Base−Emitter Voltages, PNP NJL4302D fT, CURRENT BANDWIDTH PRODUCT (MHz) 70 60 50 40 VCE = 10 V 30 20 10 0 TJ = 25°C ftest = 1 MHz 0.1 1 IC, COLLECTOR CURRENT (A) 10 VCE = 5 V fT, CURRENT BANDWIDTH PRODUCT (MHz) 70 60 VCE = 5 V 50 40 30 20 10 0 0.1 TJ = 25°C ftest = 1 MHz 1 10 VCE = 10 V Figure 9. Typical Current Gain Bandwidth Product, NPN NJL4281D Figure 10. Typical Current Gain Bandwidth Product, PNP NJL4302D http://onsemi.com 5 NJL4281D (NPN) NJL4302D (PNP) 1E−05 IR, REVERSE CURRENT (mA) IF, FORWARD CURRENT (A) 1E−06 TJ = 100°C 10 1 1E−07 1E−08 1E−09 1E−10 1E−11 0 50 100 150 200 250 300 350 400 VR, REVERSE VOLTAGE (VOLTS) TJ = 25°C TJ = −25°C 0.1 100°C 0.01 25°C −25°C 0.001 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VF, VOLTAGE (VOLTS) Figure 11. Typical Diode Reverse Current Figure 12. Typical Diode Forward Voltage 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 10 mS 10 1 Sec 1 100 10 mS 10 1 Sec 1 100 mS 100 mS 0.1 0.1 0.01 1 TJ = 25°C 10 100 1000 0.01 1 TJ = 25°C 10 100 1000 Vce, COLLECTOR−EMITTER VOLTAGE (V) Vce, COLLECTOR−EMITTER VOLTAGE (V) Figure 13. Active Region Safe Operating Area, NPN NJL4281D Figure 14. Active Region Safe Operating Area, PNP NJL4302D http://onsemi.com 6 NJL4281D (NPN) NJL4302D (PNP) PACKAGE DIMENSIONS TO−264, 5 LEAD CASE 340AA−01 ISSUE O −T− Y −B− Q 0.25 (0.010) U N A R 1 2 34 5 M TB M C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A 25.857 25.984 26.111 1.018 1.023 1.028 B 19.761 19.888 20.015 0.778 0.783 0.788 C 4.928 5.055 5.182 0.194 0.199 0.204 0.0480 BSC D 1.219 BSC E 2.032 2.108 2.184 0.0800 0.0830 0.0860 1.981 BSC 0.0780 BSC F 0.150 BSC G 3.81 BSC H 2.667 2.718 2.769 0.1050 0.1070 0.1090 0.0230 BSC J 0.584 BSC K 20.422 20.549 20.676 0.804 0.809 0.814 0.444 REF L 11.28 REF −−− 7_ 0_ 7_ 0 _ −−− M 0.180 REF N 4.57 REF P 2.259 2.386 2.513 0.0889 0.0939 0.0989 0.1370 BSC Q 3.480 BSC 0.100 REF R 2.54 REF −−− S 0 _ −−− 8_ 0_ 8_ 0.243 REF U 6.17 REF −−− W 0 _ −−− 6_ 0_ 6_ 0.0940 BSC Y 2.388 BSC STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR 4. ANODE 5. CATHODE L W S P K M F 5 PL G D 5 PL 0.25 (0.010) W J H M TB S S ThermalTrak is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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