NJVBUB323ZT4G

BUB323Z NPN Silicon Power Darlington High Voltage Autoprotected D2PAK for Surface Mount The BUB323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. Features • Integrated High−Voltage Active Clamp • Tight Clamping Voltage Window (350 V to 450 V) Guaranteed Over the −40°C to +125°C Temperature Range http://onsemi.com AUTOPROTECTED DARLINGTON 10 AMPERES 360−450 VOLTS CLAMP 150 WATTS • Clamping Energy Capability 100% Tested in a Live • • • • Ignition Circuit High DC Current Gain/Low Saturation Voltages Specified Over Full Temperature Range Design Guarantees Operation in SOA at All Times NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 360 V CLAMP MARKING DIAGRAM MAXIMUM RATINGS Symbol Value Unit Collector−Emitter Sustaining Voltage Rating VCEO 350 Vdc Collector−Emitter Voltage VEBO 6.0 Vdc Collector Current − Continuous − Peak IC ICM 10 20 Adc Base Current IB IBM 3.0 6.0 Adc 150 1.0 W W/_C TJ, Tstg −65 to +175 _C Symbol Max Unit ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. − Continuous − Peak Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD BUB323ZG AYWW D2PAK CASE 418B STYLE 1 BUB323Z A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case RqJC 1.0 _C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W TL 260 _C Maximum Lead Temperature for Soldering Purposes, 1/8 in from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2014 September, 2014 − Rev. 2 1 Publication Order Number: BUB323Z/D BUB323Z ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Symbol Min Typ Max Unit VCLAMP 350 − 450 Vdc Collector−Emitter Cutoff Current (VCE = 200 V, IB = 0) ICEO − − 100 mAdc Emitter−Base Leakage Current (VEB = 6.0 Vdc, IC = 0) IEBO − − 50 mAdc − − − − 2.2 2.5 − − − − − − − − − − 1.6 1.8 1.8 2.1 1.7 1.1 1.3 − − 2.1 2.3 − − 2.5 150 500 − − − 3400 fT − − 2.0 MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob − − 200 pF Input Capacitance (VEB = 6.0 V) Cib − − 550 pF WCLAMP 200 − − mJ tfi − 625 − ns tsi − 10 30 ms tc − 1.7 − ms Characteristic OFF CHARACTERISTICS (Note 1) Collector−Emitter Clamping Voltage (IC = 7.0 A) (TC = − 40°C to +125°C) ON CHARACTERISTICS (Note 1) Base−Emitter Saturation Voltage (IC = 8.0 Adc, IB = 100 mAdc) (IC = 10 Adc, IB = 0.25 Adc) VBE(sat) Collector−Emitter Saturation Voltage (IC = 7.0 Adc, IB = 70 mAdc) VCE(sat) (TC = 125°C) (IC = 8.0 Adc, IB = 0.1 Adc) (TC = 125°C) (IC = 10 Adc, IB = 0.25 Adc) Base−Emitter On Voltage (IC = 5.0 Adc, VCE = 2.0 Vdc) (IC = 8.0 Adc, VCE = 2.0 Vdc) Vdc Vdc VBE(on) (TC = − 40°C to +125°C) Diode Forward Voltage Drop (IF = 10 Adc) VF DC Current Gain (IC = 6.5 Adc, VCE = 1.5 Vdc) (IC = 5.0 Adc, VCE = 4.6 Vdc) Vdc hFE (TC = − 40°C to +125°C) Vdc − DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz) CLAMPING ENERGY (See Notes) Repetitive Non−Destructive Energy Dissipated at turn−off: (IC = 7.0 A, L = 8.0 mH, RBE = 100 W) (see Figures 2 and 4) SWITCHING CHARACTERISTICS: Inductive Load (L = 10 mH) Fall Time Storage Time Cross−over Time (IC = 6.5 A, IB1 = 45 mA, VBE(off) = 0, RBE(off) = 0, VCC = 14 V, VZ = 300 V) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%. http://onsemi.com 2 BUB323Z IC MERCURY CONTACTS WETTED RELAY INOM = 6.5 A Output transistor turns on: IC = 40 mA L INDUCTANCE (8 mH) VCE MONITOR (VGATE) IC CURRENT SOURCE High Voltage Circuit turns on: IC = 20 mA RBE = 100 W Avalanche diode turns on: IC = 100 mA 250 V IB CURRENT SOURCE 300 V 340 V Icer Leakage Current VBEoff IB2 SOURCE VCE VCLAMP NOMINAL = 400 V IC MONITOR 0.1 W NON INDUCTIVE Figure 1. IC = f(VCE) Curve Shape Figure 2. Basic Energy Test Circuit By design, the BU323Z has a built−in avalanche diode and a special high voltage driving circuit. During an auto−protect cycle, the transistor is turned on again as soon as a voltage, determined by the zener threshold and the network, is reached. This prevents the transistor from going into a Reverse Bias Operating limit condition. Therefore, the device will have an extended safe operating area and will always appear to be in “FBSOA.” Because of the built−in zener and associated network, the IC = f(VCE) curve exhibits an unfamiliar shape compared to standard products as shown in Figure 1. The bias parameters, VCLAMP, IB1, VBE(off), IB2, IC, and the inductance, are applied according to the Device Under Test (DUT) specifications. VCE and IC are monitored by the test system while making sure the load line remains within the limits as described in Figure 4. Note: All BU323Z ignition devices are 100% energy tested, per the test circuit and criteria described in Figures 2 and 4, to the minimum guaranteed repetitive energy, as specified in the device parameter section. The device can sustain this energy on a repetitive basis without degrading any of the specified electrical characteristics of the devices. The units under test are kept functional during the complete test sequence for the test conditions described: IC(peak) = 7.0 A, ICH = 5.0 A, ICL = 100 mA, IB = 100 mA, RBE = 100 W, Vgate = 280 V, L = 8.0 mH 10 IC, COLLECTOR CURRENT (AMPS) 300ms 1 1ms TC = 25°C 10ms 250ms 0.1 0.01 0.001 10 THERMAL LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 100 340V VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. Forward Bias Safe Operating Area http://onsemi.com 3 1000 BUB323Z IC The shaded area represents the amount of energy the device can sustain, under given DC biases (IC/IB/VBE(off)/ RBE), without an external clamp; see the test schematic diagram, Figure 2. The transistor PASSES the Energy test if, for the inductive load and ICPEAK/IB/VBE(off) biases, the VCE remains outside the shaded area and greater than the VGATE minimum limit, Figure 4a. ICPEAK IC HIGH IC LOW VCE (a) VGATE MIN IC ICPEAK IC HIGH IC LOW VCE (b) VGATE MIN IC ICPEAK IC HIGH The transistor FAILS if the VCE is less than the VGATE (minimum limit) at any point along the VCE/IC curve as shown on Figures 4b, and 4c. This assures that hot spots and uncontrolled avalanche are not being generated in the die, and the transistor is not damaged, thus enabling the sustained energy level required. IC LOW VCE (c) VGATE MIN IC ICPEAK IC HIGH The transistor FAILS if its Collector/Emitter breakdown voltage is less than the VGATE value, Figure 4d. IC LOW VCE (d) VGATE MIN Figure 4. Energy Test Criteria for BU323Z http://onsemi.com 4 BUB323Z 10000 10000 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN TYPICAL TJ = 125°C 1000 -40°C 25°C 100 1000 TYP - 6Σ TYP + 6Σ 100 VCE = 5 V, TJ = 25°C VCE = 1.5 V 10 100 1000 IC, COLLECTOR CURRENT (MILLIAMPS) 10 100 10000 5.0 4.5 TJ = 25°C IC = 3 A 4.0 3.5 5A 3.0 8A 10 A 2.5 2.0 7A 1.5 1.0 0.5 0 1 10 IB, BASE CURRENT (MILLIAMPS) 100 2.4 VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS) IC/IB = 150 1.8 TJ = 25°C 1.4 125°C 1.0 0.8 0.1 1 IC, COLLECTOR CURRENT (AMPS) TJ = 125°C 2.0 1.8 1.6 1.4 1.2 1.0 25°C 0.8 0.6 0.4 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 8. Collector−Emitter Saturation Voltage 2.0 1.2 IC/IB = 150 2.2 Figure 7. Collector Saturation Region 1.6 100000 Figure 6. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. DC Current Gain 10000 1000 IC, COLLECTOR CURRENT (MILLIAMPS) 10 2.0 VCE = 2 VOLTS 1.8 1.6 1.4 TJ = 25°C 1.2 1.0 125°C 0.8 0.6 0.1 Figure 9. Base−Emitter Saturation Voltage 1 IC, COLLECTOR CURRENT (AMPS) Figure 10. Base−Emitter “ON” Voltages http://onsemi.com 5 10 BUB323Z ORDERING INFORMATION Device BUB323ZG Package Shipping† D2PAK 50 Units / Rail (Pb−Free) BUB323ZT4G D2PAK (Pb−Free) 800 Units / Tape & Reel NJVBUB323ZT4G* D2PAK (Pb−Free) 800 Units / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. http://onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE L DATE 17 FEB 2015 SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E −B− V W 4 1 2 A S 3 −T− SEATING PLANE K W J G D DIM A B C D E F G H J K L M N P R S V H 3 PL 0.13 (0.005) M T B M VARIABLE CONFIGURATION ZONE N R P L M STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR L M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 U L M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 5: STYLE 6: PIN 1. CATHODE PIN 1. NO CONNECT 2. ANODE 2. CATHODE 3. CATHODE 3. ANODE 4. ANODE 4. CATHODE MARKING INFORMATION AND FOOTPRINT ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42761B D2PAK 3 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com D2PAK 3 CASE 418B−04 ISSUE L DATE 17 FEB 2015 GENERIC MARKING DIAGRAM* xx xxxxxxxxx AWLYWWG xxxxxxxxG AYWW AYWW xxxxxxxxG AKA IC Standard Rectifier xx A WL Y WW G AKA = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package = Polarity Indicator *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42761B D2PAK 3 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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