0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
NLV14051BDTR2G

NLV14051BDTR2G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TSSOP16

  • 描述:

    IC MUX/DEMUX 8CH DGTL 16-TSSOP

  • 数据手册
  • 价格&库存
NLV14051BDTR2G 数据手册
MC14051B, MC14052B, MC14053B Analog Multiplexers/Demultiplexers The MC14051B, MC14052B, and MC14053B analog multiplexers are digitally−controlled analog switches. The MC14051B effectively implements an SP8T solid state switch, the MC14052B a DP4T, and the MC14053B a Triple SPDT. All three devices feature low ON impedance and very low OFF leakage current. Control of analog signals up to the complete supply voltage range can be achieved. Features • • • • • • • • • • • http://onsemi.com 1 Triple Diode Protection on Control Inputs Switch Function is Break Before Make Supply Voltage Range = 3.0 Vdc to 18 Vdc Analog Voltage Range (VDD − VEE) = 3.0 to 18 V Note: VEE must be ≤ VSS Linearized Transfer Characteristics Low−noise − 12 nV/√Cycle, f ≥ 1.0 kHz Typical Pin−for−Pin Replacement for CD4051, CD4052, and CD4053 For 4PDT Switch, See MC14551B For Lower RON, Use the HC4051, HC4052, or HC4053 High−Speed CMOS Devices NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant 1 SOIC−16 D SUFFIX CASE 751B MARKING DIAGRAMS 16 1405xBG AWLYWW 1 SOIC−16 16 14 05xB ALYWG G MAXIMUM RATINGS (Voltages Referenced to VSS) Symbol Parameter 1 Value Unit −0.5 to +18.0 V −0.5 to VDD + 0.5 V Input Current (DC or Transient) per Control Pin +10 mA ISW Switch Through Current ±25 mA PD Power Dissipation per Package (Note 1) 500 mW TA Ambient Temperature Range −55 to +125 °C Tstg Storage Temperature Range −65 to +150 °C TL Lead Temperature (8−Second Soldering) 260 °C VDD DC Supply Voltage Range (Referenced to VEE, VSS ≥ VEE) Vin, Vout Input or Output Voltage Range (DC or Transient) (Referenced to VSS for Control Inputs and VEE for Switch I/O) Iin TSSOP−16 DT SUFFIX CASE 948F TSSOP−16 x A WL, L Y WW, W G or G = 1, 2, or 3 = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Temperature Derating: “D/DW” Packages: –7.0 mW/_C From 65_C To 125_C This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range VSS ≤ (Vin or Vout) ≤ VDD. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS, VEE or VDD). Unused outputs must be left open. © Semiconductor Components Industries, LLC, 2014 August, 2014 − Rev. 14 1 Publication Order Number: MC14051B/D MC14051B, MC14052B, MC14053B MC14051B 8−Channel Analog Multiplexer/Demultiplexer CONTROLS SWITCHES IN/OUT 6 11 10 9 13 14 15 12 1 5 2 4 INHIBIT A B C X0 X1 X 3 X2 COMMON X3 OUT/IN X4 X5 X6 X7 MC14052B Dual 4−Channel Analog Multiplexer/Demultiplexer CONTROLS SWITCHES IN/OUT INHIBIT A X B X0 X1 X2 X3 Y0 Y Y1 Y2 Y3 6 10 9 12 14 15 11 1 5 2 4 MC14053B Triple 2−Channel Analog Multiplexer/Demultiplexer CONTROLS 13 COMMONS OUT/IN 3 SWITCHES IN/OUT INHIBIT X A B C X0 Y X1 Y0 Y1 Z Z0 Z1 6 11 10 9 12 13 2 1 5 3 COMMONS OUT/IN 15 4 VDD = PIN 16 VSS = PIN 8 VEE = PIN 7 VDD = PIN 16 VSS = PIN 8 VEE = PIN 7 VDD = PIN 16 VSS = PIN 8 VEE = PIN 7 14 Note: Control Inputs referenced to VSS, Analog Inputs and Outputs reference to VEE. VEE must be ≤ VSS. PIN ASSIGNMENT MC14051B MC14052B MC14053B X4 1 16 VDD Y0 1 16 VDD Y1 1 16 VDD X6 2 15 X2 Y2 2 15 X2 Y0 2 15 Y X 3 14 X1 Y 3 14 X1 Z1 3 14 X X7 4 13 X0 Y3 4 13 X Z 4 13 X1 X5 5 12 X3 Y1 5 12 X0 Z0 5 12 X0 INH 6 11 A INH 6 11 X3 INH 6 11 A VEE 7 10 B VEE 7 10 A VEE 7 10 B VSS 8 9 C VSS 8 9 B VSS 8 9 C http://onsemi.com 2 MC14051B, MC14052B, MC14053B ELECTRICAL CHARACTERISTICS −55_C Characteristic Symbol VDD Test Conditions 25_C 125_C Min Max Min Typ (Note 2) 3.0 18 3.0 − 18 3.0 18 V − − − 5.0 10 20 − − − 0.005 0.010 0.015 5.0 10 20 − − − 150 300 600 mA Max Min Max Unit SUPPLY REQUIREMENTS (Voltages Referenced to VEE) VDD – 3.0 ≥ VSS ≥ VEE Power Supply Voltage Range VDD − Quiescent Current Per Package IDD 5.0 10 15 Control Inputs: Vin = VSS or VDD, Switch I/O: VEE v VI/O v VDD, and DVswitch v 500 mV (Note 3) ID(AV) 5.0 10 15 TA = 25_C only (The channel component, (Vin – Vout)/Ron, is not included.) Total Supply Current (Dynamic Plus Quiescent, Per Package mA (0.07 mA/kHz) f + IDD (0.20 mA/kHz) f + IDD (0.36 mA/kHz) f + IDD Typical CONTROL INPUTS — INHIBIT, A, B, C (Voltages Referenced to VSS) Low−Level Input Voltage VIL 5.0 10 15 Ron = per spec, Ioff = per spec − − − 1.5 3.0 4.0 − − − 2.25 4.50 6.75 1.5 3.0 4.0 − − − 1.5 3.0 4.0 V High−Level Input Voltage VIH 5.0 10 15 Ron = per spec, Ioff = per spec 3.5 7.0 11 − − − 3.5 7.0 11 2.75 5.50 8.25 − − − 3.5 7.0 11 − − − V Input Leakage Current Iin 15 Vin = 0 or VDD − ±0.1 − ±0.00001 ±0.1 − 1.0 mA Input Capacitance Cin − − − − 5.0 7.5 − − pF SWITCHES IN/OUT AND COMMONS OUT/IN — X, Y, Z (Voltages Referenced to VEE) Recommended Peak−to−Peak Voltage Into or Out of the Switch VI/O − Channel On or Off 0 VDD 0 − VDD 0 VDD VPP Recommended Static or Dynamic Voltage Across the Switch (Note 3) (Figure 5) DVswitch − Channel On 0 600 0 − 600 0 300 mV Output Offset Voltage VOO − Vin = 0 V, No Load − − − 10 − − − mV ON Resistance Ron 5.0 10 15 DVswitch v 500 mV (Note 3) Vin = VIL or VIH (Control), and Vin = 0 to VDD (Switch) − − − 800 400 220 − − − 250 120 80 1050 500 280 − − − 1200 520 300 W DRon 5.0 10 15 − − − 70 50 45 − − − 25 10 10 70 50 45 − − − 135 95 65 W Ioff 15 Vin = VIL or VIH (Control) Channel to Channel or Any One Channel − ±100 − ±0.05 ±100 − ±1000 nA Capacitance, Switch I/O CI/O − Inhibit = VDD − − − 10 − − − pF Capacitance, Common O/I CO/I − Inhibit = VDD (MC14051B) (MC14052B) (MC14053B) − − − − − − − − − 60 32 17 − − − − − − − − − Pins Not Adjacent Pins Adjacent − − − − − − 0.15 0.47 − − − − − − DON Resistance Between Any Two Channels in the Same Package Off−Channel Leakage Current (Figure 10) Capacitance, Feedthrough (Channel Off) CI/O − − pF pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Data labeled “Typ” is not to be used for design purposes, but is intended as an indication of the IC’s potential performance. 3. For voltage drops across the switch (DVswitch) > 600 mV (> 300 mV at high temperature), excessive VDD current may be drawn, i.e. the current out of the switch may contain both VDD and switch input components. The reliability of the device will be unaffected unless the Maximum Ratings are exceeded. (See first page of this data sheet.) http://onsemi.com 3 MC14051B, MC14052B, MC14053B ELECTRICAL CHARACTERISTICS (Note 4) (CL = 50 pF, TA = 25_C) (VEE v VSS unless otherwise indicated) Characteristic Propagation Delay Times (Figure 6) Switch Input to Switch Output (RL = 1 kW) MC14051 tPLH, tPHL = (0.17 ns/pF) CL + 26.5 ns tPLH, tPHL = (0.08 ns/pF) CL + 11 ns tPLH, tPHL = (0.06 ns/pF) CL + 9.0 ns Symbol VDD – VEE Vdc Typ (Note 5) All Types Max tPLH, tPHL ns 5.0 10 15 35 15 12 90 40 30 MC14052 tPLH, tPHL = (0.17 ns/pF) CL + 21.5 ns tPLH, tPHL = (0.08 ns/pF) CL + 8.0 ns tPLH, tPHL = (0.06 ns/pF) CL + 7.0 ns 5.0 10 15 30 12 10 75 30 25 MC14053 tPLH, tPHL = (0.17 ns/pF) CL + 16.5 ns tPLH, tPHL = (0.08 ns/pF) CL + 4.0 ns tPLH, tPHL = (0.06 ns/pF) CL + 3.0 ns 5.0 10 15 25 8.0 6.0 65 20 15 Inhibit to Output (RL = 10 kW, VEE = VSS) Output “1” or “0” to High Impedance, or High Impedance to “1” or “0” Level MC14051B Unit ns ns tPHZ, tPLZ, tPZH, tPZL ns 5.0 10 15 350 170 140 700 340 280 MC14052B 5.0 10 15 300 155 125 600 310 250 ns MC14053B 5.0 10 15 275 140 110 550 280 220 ns 5.0 10 15 360 160 120 720 320 240 MC14052B 5.0 10 15 325 130 90 650 260 180 ns MC14053B 5.0 10 15 300 120 80 600 240 160 ns − 10 0.07 − % BW 10 17 − MHz Off Channel Feedthrough Attenuation (Figure 7) RL = 1KW, Vin = 1/2 (VDD − VEE) p−p fin = 4.5 MHz — MC14051B fin = 30 MHz — MC14052B fin = 55 MHz — MC14053B − 10 –50 − dB Channel Separation (Figure 8) (RL = 1 kW, Vin = 1/2 (VDD−VEE) p−p, fin = 3.0 MHz − 10 –50 − dB Crosstalk, Control Input to Common O/I (Figure 9) (R1 = 1 kW, RL = 10 kW Control tTLH = tTHL = 20 ns, Inhibit = VSS) − 10 75 − mV Control Input to Output (RL = 1 kW, VEE = VSS) MC14051B Second Harmonic Distortion (RL = 10KW, f = 1 kHz) Vin = 5 VPP Bandwidth (Figure 7) (RL = 50 W, Vin = 1/2 (VDD−VEE) p−p, CL = 50pF 20 Log (Vout/Vin) = − 3 dB) tPLH, tPHL ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The formulas given are for the typical characteristics only at 25_C. 5. Data labelled “Typ” is not lo be used for design purposes but In intended as an indication of the IC’s potential performance. http://onsemi.com 4 MC14051B, MC14052B, MC14053B VDD VDD VDD IN/OUT OUT/IN VEE VDD LEVEL CONVERTED CONTROL IN/OUT OUT/IN CONTROL VEE Figure 1. Switch Circuit Schematic TRUTH TABLE 16 Control Inputs Select INH6 A11 B10 C9 ON Switches Inhibit C* B A MC14051B 0 0 0 0 0 0 0 0 0 0 1 1 0 1 0 1 X0 X1 X2 X3 0 0 0 0 1 1 1 1 0 0 1 1 0 1 0 1 X4 X5 X6 X7 1 x x x None *Not applicable for MC14052 x = Don’t Care MC14052B Y0 Y1 Y2 Y3 X0 X1 X2 X3 MC14053B Z0 Z0 Z0 Z0 Y0 Y0 Y1 Y1 X0 X1 X0 X1 Z1 Z1 Z1 Z1 Y0 Y0 Y1 Y1 X0 X1 X0 X1 None VDD BINARY TO 1-OF-8 DECODER WITH INHIBIT LEVEL CONVERTER 8 X013 X114 7 VSS VEE X215 X312 3X X41 X55 None X62 X74 Figure 2. MC14051B Functional Diagram 16 VDD 16 INH6 BINARY TO 1-OF-4 DECODER WITH INHIBIT LEVEL CONVERTER A10 B9 8 X012 X114 VSS 7 INH6 A11 B10 C9 VEE X215 X311 Y01 Y15 Y22 Y34 BINARY TO 1-OF-2 DECODER WITH INHIBIT LEVEL CONVERTER 8 13X VDD VSS 7 VEE X012 X113 Y02 Y11 Z05 3Y Z13 Figure 3. MC14052B Functional Diagram Figure 4. MC14053B Functional Diagram http://onsemi.com 5 14X 15Y 4Z MC14051B, MC14052B, MC14053B TEST CIRCUITS ON SWITCH CONTROL SECTION OF IC A B C PULSE GENERATOR Vout LOAD V CL RL INH SOURCE VDD Figure 5. DV Across Switch VEE VEE VDD Figure 6. Propagation Delay Times, Control and Inhibit to Output A, B, and C inputs used to turn ON or OFF the switch under test. RL A B C VSS Vout INH A B C ON INH OFF CL = 50 pF RL Vout Vin RL CL = 50 pF VDD - VEE VDD - VEE 2 Vin 2 Figure 7. Bandwidth and Off−Channel Feedthrough Attenuation Figure 8. Channel Separation (Adjacent Channels Used For Setup) OFF CHANNEL UNDER TEST VDD A B C CONTROL SECTION OF IC Vout RL INH VEE OTHER CHANNEL(S) VEE VDD CL = 50 pF R1 COMMON VEE VDD Figure 9. Crosstalk, Control Input to Common O/I Figure 10. Off Channel Leakage NOTE: See also Figures 7 and 8 in the MC14016B data sheet. http://onsemi.com 6 MC14051B, MC14052B, MC14053B VDD KEITHLEY 160 DIGITAL MULTIMETER 10 k 1 kW RANGE VDD X-Y PLOTTER VEE = VSS Figure 11. Channel Resistance (RON) Test Circuit 350 300 300 250 200 150 TA = 125°C 100 25°C -55°C 50 0 -10 RON , “ON” RESISTANCE (OHMS) R ON , “ON” RESISTANCE (OHMS) 350 -8.0 -6.0 -4.0 -2.0 0 0.2 4.0 6.0 8.0 250 200 150 25°C -55°C 50 -8.0 -6.0 -4.0 -2.0 0 0.2 4.0 6.0 Vin, INPUT VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 12. VDD = 7.5 V, VEE = − 7.5 V Figure 13. VDD = 5.0 V, VEE = − 5.0 V 700 350 600 300 500 400 300 TA = 125°C 200 25°C 100 0 -10 TA = 125°C 100 0 -10 10 R ON , “ON” RESISTANCE (OHMS) R ON , “ON” RESISTANCE (OHMS) TYPICAL RESISTANCE CHARACTERISTICS -55°C -8.0 -6.0 -4.0 -2.0 0 0.2 4.0 6.0 8.0 VDD = 2.5 V 200 150 5.0 V 100 7.5 V 50 -8.0 -6.0 -4.0 -2.0 0 0.2 4.0 6.0 8.0 Vin, INPUT VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 14. VDD = 2.5 V, VEE = − 2.5 V Figure 15. Comparison at 25°C, VDD = −VEE http://onsemi.com 7 10 TA = 25°C 250 0 -10 10 8.0 10 MC14051B, MC14052B, MC14053B APPLICATIONS INFORMATION peak. If voltage transients above VDD and/or below VEE are anticipated on the analog channels, external diodes (Dx) are recommended as shown in Figure B. These diodes should be small signal types able to absorb the maximum anticipated current surges during clipping. The absolute maximum potential difference between VDD and VEE is 18.0 V. Most parameters are specified up to 15 V which is the recommended maximum difference between VDD and VEE. Balanced supplies are not required. However, VSS must be greater than or equal to VEE. For example, VDD = +10 V, VSS = +5 V, and VEE – 3 V is acceptable. See the Table below. Figure A illustrates use of the on−chip level converter detailed in Figures 2, 3, and 4. The 0−to−5 V Digital Control signal is used to directly control a 9 Vp−p analog signal. The digital control logic levels are determined by VDD and VSS. The VDD voltage is the logic high voltage; the VSS voltage is logic low. For the example, VDD = +5 V = logic high at the control inputs; VSS = GND = 0 V = logic low. The maximum analog signal level is determined by VDD and VEE. The VDD voltage determines the maximum recommended peak above VSS. The VEE voltage determines the maximum swing below VSS. For the example, VDD − VSS = 5 V maximum swing above VSS ; VSS − VEE = 5 V maximum swing below VSS. The example shows a ±4.5 V signal which allows a 1/2 volt margin at each +5 V -5 V VDD VSS VEE + 4.5 V 9 Vp-p +5 V ANALOG SIGNAL EXTERNAL CMOS DIGITAL CIRCUITRY SWITCH I/O COMMON O/I MC14051B 9 Vp-p ANALOG SIGNAL MC14052B MC14053B 0-TO-5 V DIGITAL CONTROL SIGNALS GND −4.5 V INHIBIT, A, B, C Figure A. Application Example VDD VDD DX DX ANALOG I/O COMMON O/I DX DX VEE VEE Figure B. External Germanium or Schottky Clipping Diodes POSSIBLE SUPPLY CONNECTIONS VDD In Volts VSS In Volts VEE In Volts Control Inputs Logic High/Logic Low In Volts Maximum Analog Signal Range In Volts +8 0 –8 +8/0 +8 to –8 = 16 Vp–p +5 0 –12 +5/0 +5 to –12 = 17 Vp–p +5 0 0 +5/0 +5 to 0 = 5 Vp–p +5 0 –5 +5/0 +5 to –5 = 10 Vp–p +10 +5 –5 +10/ +5 +10 to –5 = 15 Vp–p http://onsemi.com 8 MC14051B, MC14052B, MC14053B ORDERING INFORMATION Package Shipping† MC14051BDG SOIC−16 (Pb−Free) 48 Units / Rail NLV14051BDG* SOIC−16 (Pb−Free) 48 Units / Rail MC14051BDR2G SOIC−16 (Pb−Free) 2500 / Tape & Reel NLV14051BDR2G* SOIC−16 (Pb−Free) 2500 / Tape & Reel MC14051BDTR2G TSSOP−16 (Pb−Free) 2500 / Tape & Reel NLV14051BDTR2G* TSSOP−16 (Pb−Free) 2500 / Tape & Reel MC14052BDG SOIC−16 (Pb−Free) 48 Units / Rail NLV14052BDG* SOIC−16 (Pb−Free) 48 Units / Rail MC14052BDR2G SOIC−16 (Pb−Free) 2500 / Tape & Reel NLV14052BDR2G* SOIC−16 (Pb−Free) 2500 / Tape & Reel MC14052BDTR2G TSSOP−16 (Pb−Free) 2500 / Tape & Reel NLV14052BDTR2G* TSSOP−16 (Pb−Free) 2500 / Tape & Reel MC14053BDG SOIC−16 (Pb−Free) 48 Units / Rail NLV14053BDG* SOIC−16 (Pb−Free) 48 Units / Rail MC14053BDR2G SOIC−16 (Pb−Free) 2500 / Tape & Reel NLV14053BDR2G* SOIC−16 (Pb−Free) 2500 / Tape & Reel MC14053BDTR2G TSSOP−16 (Pb−Free) 2500 / Tape & Reel Device NLV14053BDTR2G* TSSOP−16 2500 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. http://onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−16 CASE 751B−05 ISSUE K DATE 29 DEC 2006 SCALE 1:1 −A− 16 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 9 −B− 1 P 8 PL 0.25 (0.010) 8 M B S G R K F X 45 _ C −T− SEATING PLANE J M D DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 16 PL 0.25 (0.010) M T B S A S STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. CATHODE ANODE NO CONNECTION CATHODE CATHODE NO CONNECTION ANODE CATHODE CATHODE ANODE NO CONNECTION CATHODE CATHODE NO CONNECTION ANODE CATHODE STYLE 3: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. COLLECTOR, DYE #1 BASE, #1 EMITTER, #1 COLLECTOR, #1 COLLECTOR, #2 BASE, #2 EMITTER, #2 COLLECTOR, #2 COLLECTOR, #3 BASE, #3 EMITTER, #3 COLLECTOR, #3 COLLECTOR, #4 BASE, #4 EMITTER, #4 COLLECTOR, #4 STYLE 4: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. STYLE 5: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. DRAIN, DYE #1 DRAIN, #1 DRAIN, #2 DRAIN, #2 DRAIN, #3 DRAIN, #3 DRAIN, #4 DRAIN, #4 GATE, #4 SOURCE, #4 GATE, #3 SOURCE, #3 GATE, #2 SOURCE, #2 GATE, #1 SOURCE, #1 STYLE 6: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE ANODE ANODE ANODE ANODE ANODE ANODE ANODE ANODE STYLE 7: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. SOURCE N‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) GATE P‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) SOURCE P‐CH SOURCE P‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) GATE N‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) SOURCE N‐CH COLLECTOR, DYE #1 COLLECTOR, #1 COLLECTOR, #2 COLLECTOR, #2 COLLECTOR, #3 COLLECTOR, #3 COLLECTOR, #4 COLLECTOR, #4 BASE, #4 EMITTER, #4 BASE, #3 EMITTER, #3 BASE, #2 EMITTER, #2 BASE, #1 EMITTER, #1 SOLDERING FOOTPRINT 8X 6.40 16X 1 1.12 16 16X 0.58 1.27 PITCH 8 9 DIMENSIONS: MILLIMETERS DOCUMENT NUMBER: DESCRIPTION: 98ASB42566B SOIC−16 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSSOP−16 CASE 948F−01 ISSUE B 16 DATE 19 OCT 2006 1 SCALE 2:1 16X K REF 0.10 (0.004) 0.15 (0.006) T U M T U S V S K S ÉÉÉ ÇÇÇ ÇÇÇ ÉÉÉ K1 2X L/2 16 9 J1 B −U− L SECTION N−N J PIN 1 IDENT. N 8 1 0.25 (0.010) M 0.15 (0.006) T U S A −V− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. N F DETAIL E −W− C 0.10 (0.004) −T− SEATING PLANE D H G DETAIL E DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 −−− 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.18 0.28 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 −−− 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.007 0.011 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT 7.06 16 XXXX XXXX ALYW 1 1 0.65 PITCH 16X 0.36 DOCUMENT NUMBER: DESCRIPTION: 16X 1.26 98ASH70247A TSSOP−16 DIMENSIONS: MILLIMETERS XXXX A L Y W G or G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative
NLV14051BDTR2G 价格&库存

很抱歉,暂时无法提供与“NLV14051BDTR2G”相匹配的价格&库存,您可以联系我们找货

免费人工找货
NLV14051BDTR2G
  •  国内价格 香港价格
  • 1+11.158371+1.38419
  • 10+6.6743610+0.82795
  • 25+5.5700525+0.69097
  • 100+4.35536100+0.54028
  • 250+3.77532250+0.46833
  • 500+3.42443500+0.42480
  • 1000+3.134601000+0.38885

库存:2210