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NLVVHC1GT125DF1G

NLVVHC1GT125DF1G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SC70-5

  • 描述:

    IC BUFFER NON-INVERT 5.5V SC88A

  • 数据手册
  • 价格&库存
NLVVHC1GT125DF1G 数据手册
Noninverting 3-State Buffer MC74VHC1G125, MC74VHC1GT125 The MC74VHC1G125 / MC74VHC1GT125 is a single non−inverting 3−state buffer in tiny footprint packages. The MC74VHC1G125 has CMOS−level input thresholds while the MC74VHC1GT125 has TTL−level input thresholds. The internal circuit is composed of three stages, including a buffered 3−state output which provides high noise immunity and stable output. The input structures provide protection when voltages up to 5.5 V are applied, regardless of the supply voltage. This allows the device to be used to interface 5 V circuits to 3 V circuits. The output structures also provide protection when VCC = 0 V and when the output voltage exceeds VCC. These input and output structures help prevent device destruction caused by supply voltage − input/output voltage mismatch, battery backup, hot insertion, etc. www.onsemi.com MARKING DIAGRAMS Features • • • • • • • • • Designed for 2.0 V to 5.5 V VCC Operation 3.5 ns tPD at 5 V (typ) Inputs/Outputs Over−Voltage Tolerant up to 5.5 V IOFF Supports Partial Power Down Protection Source/Sink 8 mA at 3.0 V Available in SC−88A, SC−74A, TSOP−5, SOT−553, SOT−953 and UDFN6 Packages Chip Complexity < 100 FETs NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant OE EN A SC−88A DF SUFFIX CASE 419A XX MG G SC−74A DBV SUFFIX CASE 318BQ XXX MG G TSOP−5 DT SUFFIX CASE 483 5 1 5 1 SOT−553 XV5 SUFFIX CASE 463B SOT−953 P5 SUFFIX CASE 527AE 1 XX MG G XX MG G XM 1 UDFN6 1.45 x 1.0 CASE 517AQ XM UDFN6 1.2 x 1.0 CASE 517AA XM Y Figure 1. Logic Symbol 1 UDFN6 1.0 x 1.0 CASE 517BX XX M G XM 1 = Specific Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 9 of this data sheet. © Semiconductor Components Industries, LLC, 2012 September, 2020 − Rev. 19 1 Publication Order Number: MC74VHC1G125/D MC74VHC1G125, MC74VHC1GT125 VCC OE 1 5 A VCC A 5 1 OE 1 6 VCC A 2 5 NC GND 3 4 Y GND 2 2 GND Y 4 3 Y OE 4 3 SOT−953 (SC−88A/SOT−553/ TSOP−5/ SC−74A) UDFN6 Figure 2. Pinout (Top View) PIN ASSIGNMENT (SC−88A/SOT−553/ TSOP−5/SC−74A) PIN ASSIGNMENT (SOT−953) PIN ASSIGNMENT (UDFN) Pin Function Pin Function Pin Function 1 OE 1 A 1 OE 2 A 2 GND 2 A 3 GND 3 OE 3 GND 4 Y 4 Y 4 Y 5 VCC 5 VCC 5 NC 6 VCC FUNCTION TABLE Input Output OE A Y L L L L H H H X Z X = Don’t Care www.onsemi.com 2 MC74VHC1G125, MC74VHC1GT125 MAXIMUM RATINGS Symbol Value Unit VCC DC Supply Voltage TSOP−5, SC−88A (NLV) SC−74A, SC−88A, UDFN6, SOT−553, SOT−953 −0.5 to +7.0 −0.5 to +6.5 V VIN DC Input Voltage TSOP−5, SC−88A (NLV) SC−74A, SC−88A, UDFN6, SOT−553, SOT−953 −0.5 to +7.0 −0.5 to +6.5 V Active−Mode (High or Low State) Tri−State Mode (Note 1) Power−Down Mode (VCC = 0 V) −0.5 to VCC + 0.5 −0.5 to +7.0 −0.5 to +7.0 V DC Output Voltage Active−Mode (High or Low State) SC−74A, SC−88A, UDFN6, SOT−553, SOT−953 Tri−State Mode (Note 1) Power−Down Mode (VCC = 0 V) −0.5 to VCC + 0.5 −0.5 to +6.5 −0.5 to +6.5 V VIN < GND −20 mA VOUT < GND −20 mA VOUT Characteristics DC Output Voltage TSOP−5, SC−88A (NLV) IIK DC Input Diode Current IOK DC Output Diode Current IOUT DC Output Source/Sink Current ±25 mA DC Supply Current per Supply Pin or Ground Pin ±50 mA −65 to +150 °C ICC or IGND TSTG Storage Temperature Range TL Lead Temperature, 1 mm from Case for 10 secs 260 °C TJ Junction Temperature Under Bias +150 °C qJA Thermal Resistance (Note 2) SC−88A SC−74A SOT−553 SOT−953 UDFN6 377 320 324 254 154 °C/W PD Power Dissipation in Still Air SC−88A SC−74A SOT−553 SOT−953 UDFN6 332 390 386 491 812 mW Level 1 − MSL Moisture Sensitivity FR Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in − ESD Withstand Voltage (Note 3) Human Body Model Charged Device Model 2000 1000 V $100 mA VESD ILatchup Latchup Performance (Note 4) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Applicable to devices with outputs that may be tri−stated. 2. Measured with minimum pad spacing on an FR4 board, using 10mm−by−1inch, 2 ounce copper trace no air flow per JESD51−7. 3. HBM tested to ANSI/ESDA/JEDEC JS−001−2017. CDM tested to EIA/JESD22−C101−F. JEDEC recommends that ESD qualification to EIA/JESD22−A115−A (Machine Model) be discontinued per JEDEC/JEP172A. 4. Tested to EIA/JESD78 Class II. www.onsemi.com 3 MC74VHC1G125, MC74VHC1GT125 RECOMMENDED OPERATING CONDITIONS Symbol Characteristics VCC Positive DC Supply Voltage VIN DC Input Voltage VOUT TA tr , tf Min Max Unit 2.0 5.5 V 0 5.5 V DC Output Voltage TSOP−5, SC−88A (NLV) 0 VCC V DC Output Voltage SC−74A, SC−88A, UDFN6, SOT−553, SOT−953 Active−Mode (High or Low State) Tri−State Mode (Note 1) Power−Down Mode (VCC = 0 V) 0 0 0 VCC 5.5 5.5 −55 +125 Operating Temperature Range Input Rise and Fall Time TSOP−5, SC−88A (NLV) VCC = 3.0 V to 3.6 V VCC = 4.5 V to 5.5 V 0 0 100 20 Input Rise and Fall Time SC−74A, SC−88A, UDFN6, SOT−553, SOT−953 VCC = 2.0 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V VCC = 4.5 V to 5.5 V 0 0 0 0 20 20 10 5 °C ns/V Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 4 MC74VHC1G125, MC74VHC1GT125 DC ELECTRICAL CHARACTERISTICS (MC74VHC1G125) Symbol VIH VIL Parameter Test Conditions High−Level Input Voltage Low−Level Input Voltage TA = 25°C −40°C ≤ TA ≤ 85°C −55°C ≤ TA ≤ 125°C VCC (V) Min Typ Max Min Max Min Max Unit 2.0 1.5 − − 1.5 − 1.5 − V 3.0 2.1 − − 2.1 − 2.1 − 4.5 3.15 − − 3.15 − 3.15 − 5.5 3.85 − − 3.85 − 3.85 − 2.0 − − 0.5 − 0.5 − 0.5 3.0 − − 0.9 − 0.9 − 0.9 4.5 − − 1.35 − 1.35 − 1.35 V 5.5 − − 1.65 − 1.65 − 1.65 VOH High−Level Output Voltage VIN = VIH or VIL IOH = −50 mA IOH = −50 mA IOH = −50 mA IOH = −4 mA IOH = −8 mA 2.0 3.0 4.5 3.0 4.5 1.9 2.9 4.4 2.58 3.94 2.0 3.0 4.5 − − − − − − − 1.9 2.9 4.4 2.48 3.80 − − − − − 1.9 2.9 4.4 2.34 3.66 − − − − − VOL Low−Level Output Voltage VIN = VIH or VIL IOL = 50 mA IOL = 50 mA IOL = 50 mA IOL = 4 mA IOL = 8 mA 2.0 3.0 4.5 3.0 4.5 − − − − − 0.0 0.0 0.0 − − 0.1 0.1 0.1 0.36 0.36 − − − − − 0.1 0.1 0.1 0.44 0.44 − − − − − 0.1 0.1 0.1 0.52 0.52 IIN Input Leakage Current VIN = 5.5 V or GND 2.0 to 5.5 − − ±0.1 − ±1.0 − $1.0 mA IOZ 3−State Output Leakage Current VOUT = 0 V to 5.5 V 5.5 − − ±0.25 − $2.5 − $2.5 mA IOFF Power Off Leakage Current VIN = 5.5 V or VOUT = 5.5 V 0 − − 1.0 − 10 − 10 mA ICC Quiescent Supply Current VIN = VCC or GND 5.5 − − 1.0 − 20 − 40 mA www.onsemi.com 5 V V MC74VHC1G125, MC74VHC1GT125 DC ELECTRICAL CHARACTERISTICS (MC74VHC1GT125) Symbol VIH VIL Parameter Test Conditions High−Level Input Voltage Low−Level Input Voltage TA = 25°C −40°C ≤ TA ≤ 85°C −55°C ≤ TA ≤ 125°C VCC (V) Min Typ Max Min Max Min Max Unit 2.0 1.0 − − 1.0 − 1.0 − V 3.0 1.4 − − 1.4 − 1.4 − 4.5 2.0 − − 2.0 − 2.0 − 5.5 2.0 − − 2.0 − 2.0 − 2.0 − − 0.28 − 0.28 − 0.28 3.0 − − 0.45 − 0.45 − 0.45 4.5 − − 0.8 − 0.8 − 0.8 V 5.5 − − 0.8 − 0.8 − 0.8 VOH High−Level Output Voltage VIN = VIH or VIL IOH = −50 mA IOH = −50 mA IOH = −50 mA IOH = −4 mA IOH = −8 mA 2.0 3.0 4.5 3.0 4.5 1.9 2.9 4.4 2.58 3.94 2.0 3.0 4.5 − − − − − − − 1.9 2.9 4.4 2.48 3.80 − − − − − 1.9 2.9 4.4 2.34 3.66 − − − − − VOL Low−Level Output Voltage VIN = VIH or VIL IOL = 50 mA IOL = 50 mA IOL = 50 mA IOL = 4 mA IOL = 8 mA 2.0 3.0 4.5 3.0 4.5 − − − − − 0.0 0.0 0.0 − − 0.1 0.1 0.1 0.36 0.36 − − − − − 0.1 0.1 0.1 0.44 0.44 − − − − − 0.1 0.1 0.1 0.52 0.52 IIN Input Leakage Current VIN = 5.5 V or GND 2.0 to 5.5 − − ±0.1 − ±1.0 − $1.0 mA IOZ 3−State Output Leakage Current VOUT = 0 V to 5.5 V 5.5 − − ±0.25 − $2.5 − $2.5 mA IOFF Power Off Leakage Current VIN = 5.5 V or VOUT = 5.5 V 0 − − 1.0 − 10 − 10 mA ICC Quiescent Supply Current VIN = VCC or GND 5.5 − − 1.0 − 20 − 40 mA ICCT Increase in Quiescent Supply Current per Input Pin One Input: VIN = 3.4 V; Other Input at VCC or GND 5.5 − − 1.35 − 1.5 − 1.65 mA www.onsemi.com 6 V V MC74VHC1G125, MC74VHC1GT125 AC ELECTRICAL CHARACTERISTICS TA = 25°C Symbol Parameter Conditions VCC (V) Min Typ tPLH, tPHL Propagation Delay, A to Y (Figures 3 and 4) CL = 15 pF 3.0 to 3.6 − − CL = 50 pF CL = 15 pF 4.5 to 5.5 CL = 50 pF tPZL, tPZH Output Enable Time, OE to Y (Figures 3 and 4) CL = 15 pF 3.0 to 3.6 CL = 50 pF CL = 15 pF 4.5 to 5.5 CL = 50 pF tPLZ, tPHZ Output Disable Time, OE to Y (Figures 3 and 4) CL = 15 pF 3.0 to 3.6 CL = 50 pF CL = 15 pF 4.5 to 5.5 CL = 50 pF CIN COUT Input Capacitance Output Capacitance Output in High Impedance State −40°C ≤ TA ≤ 85°C Max Min 4.5 8.0 6.4 11.5 − 3.5 − − −55°C ≤ TA ≤ 125°C Max Min Max Unit − 9.5 − 12.0 ns − 13.0 − 16.0 5.5 − 6.5 − 8.5 4.5 7.5 − 8.5 − 10.5 4.5 8.0 − 9.5 − 11.5 − 6.4 11.5 − 13.0 − 15.0 − 3.5 5.1 − 6.0 − 8.5 − 4.5 7.1 − 8.0 − 10.5 − 6.5 9.7 − 11.5 − 14.5 − 8.0 13.2 − 15.0 − 18.0 − 4.8 6.8 − 8.0 − 10.0 − 7.0 8.8 − 10.0 − 12.0 − 4.0 10 − 10 − 10 pF − 6.0 − − − − − pF ns ns Typical @ 25°C, VCC = 5.0 V CPD 8.0 Power Dissipation Capacitance (Note 5) pF 5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD  VCC2  fin + ICC  VCC. www.onsemi.com 7 MC74VHC1G125, MC74VHC1GT125 OPEN VCC Test Switch Position CL, pF RL, W tPLH / tPHL Open See AC Characteristics Table X tPLZ / tPZL VCC 1k tPHZ / tPZH GND 1k GND RL OUTPUT DUT RT X = Don’t Care CL * CL includes probe and jig capacitance RT is ZOUT of pulse generator (typically 50 W) f = 1 MHz Figure 3. Test Circuit tr = 3 ns tf = 3 ns 90% 90% Vmi INPUT Vmi INPUT Vmi 10% 10% tPHL Vmi GND GND tPZL tPLH Vmo OUTPUT VCC VCC tPLZ Vmo OUTPUT Vmo VOL + VY VOL VOL tPLH OUTPUT tPHL Vmo ~VCC VOH tPZH VOH Vmo tPHZ VOH VOH − VY Vmo OUTPUT VOL ~0 V Figure 4. Switching Waveforms Vmo, V VCC, V Vmi, V tPLH, tPHL 3.0 to 3.6 VCC/2 VCC/2 VCC/2 0.3 4.5 to 5.5 VCC/2 VCC/2 VCC/2 0.3 www.onsemi.com 8 tPZL, tPLZ, tPZH, tPHZ VY, V MC74VHC1G125, MC74VHC1GT125 ORDERING INFORMATION Packages Specific Device Code Pin 1 Orientation (See below) Shipping† M74VHC1G125DFT1G SC−88A W0 Q2 3000 / Tape & Reel M74VHC1G125DFT2G SC−88A W0 Q4 3000 / Tape & Reel NLVVHC1G125DFT1G* SC−88A W0 Q2 3000 / Tape & Reel M74VHC1GT125DF1G SC−88A W1 Q2 3000 / Tape & Reel M74VHC1GT125DF2G SC−88A W1 Q4 3000 / Tape & Reel NLVVHC1GT125DF1G* SC−88A W1 Q2 3000 / Tape & Reel NLVVHC1GT125DF2G* SC−88A W1 Q4 3000 / Tape & Reel MC74VHC1G125DBVT1G SC−74A W0 Q4 3000 / Tape & Reel MC74VHC1GT125DBVT1G SC−74A W1 Q4 3000 / Tape & Reel M74VHC1G125DTT1G TSOP−5 W0 Q4 3000 / Tape & Reel M74VHC1GT125DT1G TSOP−5 W1 Q4 3000 / Tape & Reel NLVVHC1GT125DT1G* TSOP−5 W1R Q4 3000 / Tape & Reel MC74VHC1G125XV5T2G (In Development) SOT−553 TBD Q4 4000 / Tape & Reel MC74VHC1GT125XV5T2G (In Development) SOT−553 TBD Q4 4000 / Tape & Reel MC74VHC1G125P5T5G SOT−953 T Q2 8000 / Tape & Reel MC74VHC1GT125P5T5G (In Development) SOT−953 TBD Q2 8000 / Tape & Reel MC74VHC1G125MU1TCG (In Development) UDFN6, 1.45 x 1.0, 0.5P TBD Q4 3000 / Tape & Reel MC74VHC1GT125MU1TCG UDFN6, 1.45 x 1.0, 0.5P D Q4 3000 / Tape & Reel MC74VHC1GT125MU2TCG UDFN6, 1.2 x 1.0, 0.4P 7 Q4 3000 / Tape & Reel MC74VHC1G125MU3TCG (In Development) UDFN6, 1.0 x 1.0, 0.35P TBD Q4 3000 / Tape & Reel MC74VHC1GT125MU3TCG UDFN6, 1.0 x 1.0, 0.35P L Q4 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. Pin 1 Orientation in Tape and Reel www.onsemi.com 9 MC74VHC1G125, MC74VHC1GT125 PACKAGE DIMENSIONS SC−88A (SC−70−5/SOT−353) CASE 419A−02 ISSUE L A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. G 5 4 −B− S 1 2 DIM A B C D G H J K N S 3 D 5 PL 0.2 (0.008) M B M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 J C K H SOLDER FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 10 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 MC74VHC1G125, MC74VHC1GT125 PACKAGE DIMENSIONS SC−74A CASE 318BQ ISSUE B 5X b 0.20 C A B E1 5 M 4 1 2 E 3 B 0.05 A1 L DETAIL A e A D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. TOP VIEW A SIDE VIEW C DETAIL A c SEATING PLANE END VIEW DIM A A1 b c D E E1 e L M MILLIMETERS MIN MAX 0.90 1.10 0.01 0.10 0.25 0.50 0.10 0.26 2.85 3.15 2.50 3.00 1.35 1.65 0.95 BSC 0.20 0.60 0_ 10 _ RECOMMENDED SOLDERING FOOTPRINT* 0.95 PITCH 2.40 5X 1.00 5X 0.70 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 11 MC74VHC1G125, MC74VHC1GT125 PACKAGE DIMENSIONS TSOP−5 CASE 483−02 ISSUE M D 5X NOTE 5 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSION A. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. 0.20 C A B 0.10 T M 2X 0.20 T B 5 1 4 2 B S 3 K DETAIL Z G A A TOP VIEW DIM A B C D G H J K M S DETAIL Z J C 0.05 H SIDE VIEW C SEATING PLANE END VIEW MILLIMETERS MIN MAX 2.85 3.15 1.35 1.65 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 0_ 10 _ 2.50 3.00 SOLDERING FOOTPRINT* 0.95 0.037 1.9 0.074 2.4 0.094 1.0 0.039 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 12 MC74VHC1G125, MC74VHC1GT125 PACKAGE DIMENSIONS SOT−553, 5 LEAD CASE 463B ISSUE C D −X− 5 A 4 1 e 2 L E −Y− 3 b HE DIM A b c D E e L HE c 5 PL 0.08 (0.003) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. M X Y MILLIMETERS NOM MAX 0.55 0.60 0.22 0.27 0.13 0.18 1.60 1.65 1.20 1.25 0.50 BSC 0.10 0.20 0.30 1.55 1.60 1.65 MIN 0.50 0.17 0.08 1.55 1.15 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 13 INCHES NOM 0.022 0.009 0.005 0.063 0.047 0.020 BSC 0.004 0.008 0.061 0.063 MIN 0.020 0.007 0.003 0.061 0.045 MAX 0.024 0.011 0.007 0.065 0.049 0.012 0.065 MC74VHC1G125, MC74VHC1GT125 PACKAGE DIMENSIONS SOT−953 CASE 527AE ISSUE E X D PIN ONE INDICATOR 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. A Y 4 HE E 1 2 3 DIM A b C D E e HE L L2 L3 C TOP VIEW SIDE VIEW e L 5X 5X L3 MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.10 0.15 0.20 0.07 0.12 0.17 0.95 1.00 1.05 0.75 0.80 0.85 0.35 BSC 0.95 1.00 1.05 0.175 REF 0.05 0.10 0.15 −−− −−− 0.15 SOLDERING FOOTPRINT* 5X 0.35 5X 0.20 5X L2 5X BOTTOM VIEW b PACKAGE OUTLINE 0.08 X Y 1.20 1 0.35 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 14 MC74VHC1G125, MC74VHC1GT125 PACKAGE DIMENSIONS UDFN6, 1.45x1.0, 0.5P CASE 517AQ ISSUE O A B D L L NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 mm FROM THE TERMINAL TIP. L1 PIN ONE REFERENCE 0.10 C ÉÉÉ ÉÉÉ DETAIL A E OPTIONAL CONSTRUCTIONS ÉÉÉ ÉÉÉ EXPOSED Cu TOP VIEW 0.10 C DETAIL B MOLD CMPD DETAIL B 0.05 C 6X DIM A A1 A2 b D E e L L1 OPTIONAL CONSTRUCTIONS A MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.07 REF 0.20 0.30 1.45 BSC 1.00 BSC 0.50 BSC 0.30 0.40 −−− 0.15 MOUNTING FOOTPRINT 0.05 C A1 SIDE VIEW A2 e 6X C 6X SEATING PLANE L 1.24 3 1 DETAIL A 6X 0.53 6 0.30 PACKAGE OUTLINE 4 BOTTOM VIEW 6X 0.50 PITCH DIMENSIONS: MILLIMETERS b 0.10 C A B 0.05 C 1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NOTE 3 www.onsemi.com 15 MC74VHC1G125, MC74VHC1GT125 PACKAGE DIMENSIONS UDFN6, 1.2x1.0, 0.4P CASE 517AA−01 ISSUE D EDGE OF PACKAGE L1 ÉÉ ÉÉ PIN ONE REFERENCE 2X 0.10 C E DETAIL A Bottom View (Optional) TOP VIEW 2X EXPOSED Cu 0.10 C (A3) 0.10 C A1 A 10X 0.08 C ÉÉÉ ÉÉÉ A3 DETAIL B Side View (Optional) 5X MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.127 REF 0.15 0.25 1.20 BSC 1.00 BSC 0.40 BSC 0.30 0.40 0.00 0.15 0.40 0.50 MOUNTING FOOTPRINT* 6X 6X 0.42 C A1 DIM A A1 A3 b D E e L L1 L2 MOLD CMPD SEATING PLANE SIDE VIEW 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A B D 0.22 L 3 L2 6 0.40 PITCH 4 e 6X DIMENSIONS: MILLIMETERS b *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 0.10 C A B BOTTOM VIEW 1.07 0.05 C NOTE 3 www.onsemi.com 16 MC74VHC1G125, MC74VHC1GT125 PACKAGE DIMENSIONS UDFN6, 1x1, 0.35P CASE 517BX ISSUE O PIN ONE REFERENCE 2X 0.08 C 2X ÉÉÉ ÉÉÉ 0.08 C 0.05 C L1 A B D L NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20 MM FROM TERMINAL TIP. 4. PACKAGE DIMENSIONS EXCLUSIVE OF BURRS AND MOLD FLASH. L3 E DETAIL A ALTERNATE TERMINAL CONSTRUCTION ÉÉ ÉÉ ÇÇ TOP VIEW EXPOSED Cu DETAIL B A3 A1 MOLD CMPD DETAIL B A ALTERNATE CONSTRUCTION 0.05 C SIDE VIEW C SEATING PLANE 3 1 6X MILLIMETERS MIN MAX 0.50 0.65 0.00 0.05 0.13 REF 0.17 0.23 1.00 BSC 1.00 BSC 0.35 0.20 0.40 −−− 0.15 0.26 0.33 RECOMMENDED SOLDERING FOOTPRINT* e DETAIL A DIM A A1 A3 b D E e L L1 L3 L 6X 6X 0.25 0.52 1.20 6 4 BOTTOM VIEW 6X PACKAGE OUTLINE b 0.07 M C A B 0.05 M C 1 0.35 PITCH NOTE 3 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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