NLVX1G74MUTCG

NLX1G74 Single D Flip-Flop The NLX1G74 is a high performance, full function edge−triggered D Flip−Flop in ultra−small footprint. The NLX1G74 input structures provide protection when voltages up to 7.0 V are applied, regardless of the supply voltage. http://onsemi.com Features • • • • • • • • • Extremely High Speed: tPD = 2.6 ns (typical) at VCC = 5.0 V Designed for 1.65 V to 5.5 V VCC Operation MARKING DIAGRAM Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C 1 24 mA Balanced Output Sink and Source Capability at VCC = 3.0 V 1 UQFN8 MU SUFFIX CASE 523AN Balanced Propagation Delays Overvoltage Tolerant (OVT) Input Pins AA MG G AA = Device Code M = Date Code* G = Pb−Free Package Ultra Small Package NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable This is a Pb−Free Device 8 (Note: Microdot may be in either location) PINOUT DIAGRAM CP 7 D 6 Q 5 TRUTH TABLE Inputs VCC 8 Outputs PR CLR CP D Q Q Operating Mode L H L H L L X X X X X X H L H L H H Asynchronous Set Asynchronous Clear Undetermined H H H H ↑ ↑ h l H L L H Load and Read Register H H ↑ X NC NC Hold 4 GND 1 PR 2 3 CLR Q LOGIC DIAGRAM PR H h = High Voltage Level = High Voltage Level One Setup Time Prior to the Low−to−High Clock Transition L = Low Voltage Level l = Low Voltage Level One Setup Time Prior to the Low−to−High Clock Transition NC = No Change X = High or Low Voltage Level and Transitions are Acceptable ↑ = Low−to−High Transition ↑ = Not a Low−to−High Transition For ICC reasons, DO NOT FLOAT Inputs 1 D 6 3 Q CP 7 5 Q 2 CLR VCC = 8, GND = 4 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 1 1 Publication Order Number: NLX1G74/D NLX1G74 MAXIMUM RATINGS Symbol Value Unit DC Supply Voltage −0.5 to +7.0 V VI DC Input Voltage −0.5 to +7.0 V VO DC Output Voltage − Output in High or Low State (Note 1) −0.5 to VCC +0.5 V VCC Parameter IIK DC Input Diode Current VI < GND −50 mA IOK DC Output Diode Current VO < GND −50 mA IO DC Output Sink Current ±50 mA ICC DC Supply Current Per Supply Pin ±100 mA IGND DC Ground Current Per Ground Pin ±100 mA TSTG Storage Temperature Range −65 to +150 °C °C TL Lead Temperature, 1 mm from Case for 10 Seconds 260 TJ Junction Temperature Under Bias +150 °C qJA Thermal Resistance (Note 2) 250 °C/W PD Power Dissipation in Still Air at 85°C 250 mW MSL Moisture Sensitivity FR Flammability Rating Oxygen Index: 28 to 34 ESD Withstand Voltage Human Body Model (Note 3) Machine Model (Note 4) Charged Device Model (Note 5) VESD Level 1 UL 94 V−0 @ 0.125 in >2000 >200 N/A V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. IO absolute maximum rating must be observed. 2. Measured with minimum pad spacing on an FR4 board, using 10 mm X 1 inch, 2 ounce copper trace with no air flow. 3. Tested to EIA/JESD22−A114−A. 4. Tested to EIA/JESD22−A115−A. 5. Tested to JESD22−C101−A. RECOMMENDED OPERATING CONDITIONS Symbol VCC Parameter Supply Voltage Operating Data Retention Only Min Max Unit 1.65 1.5 5.5 5.5 V VI Input Voltage (Note 6) 0 5.5 V VO Output Voltage (HIGH or LOW State) 0 VCC V TA Operating Free−Air Temperature −40 +85 °C Dt/DV Input Transition Rise or Fall Rate 0 0 0 20 10 5.0 ns/V VCC = 2.5 V ±0.2 V VCC = 3.0 V ±0.3 V VCC = 5.0 V ±0.5 V 6. Unused inputs may not be left open. All inputs must be tied to a high−logic voltage level or a low−logic input voltage level. ORDERING INFORMATION Package Shipping† NLX1G74MUTCG UQFN8 (Pb−Free) 3000 / Tape & Reel NLVX1G74MUTCG* UQFN8 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. http://onsemi.com 2 NLX1G74 DC ELECTRICAL CHARACTERISTICS TA = 25_C VCC Symbol Parameter VIH High−Level Input Voltage VIL Condition Low−Level Input Voltage (V) Min 1.65 0.75 VCC 0.75 VCC 2.3 to 5.5 0.7 VCC 0.7 VCC Max Min Max 1.65 0.25 VCC 0.25 VCC 0.3 VCC 0.3 VCC High−Level Output Voltage VIN = VIL or VIL IOH = 100 mA IOH = −3 mA IOH = −8 mA IOH = −12 mA IOH = −16 mA IOH = −24 mA IOH = −32 mA 1.65 to 5.5 1.65 2.3 2.7 3.0 3.0 4.5 VOL Low−Level Output Voltage VIN = VIH IOL = 100 mA IOL = 3 mA IOL = 8 mA IOL = 12 mA IOL = 16 mA IOL = 24 mA IOL = 32 mA 1.65 to 5.5 1.65 2.3 2.7 3.0 3.0 4.5 VCC − 0.1 1.29 1.9 2.2 2.4 2.3 3.8 VCC 1.52 2.1 2.4 2.7 2.5 4.0 0.008 0.10 0.12 0.15 0.19 0.30 0.30 Unit V 2.3 to 5.5 VOH IIN Typ *40_C v TA v 85_C VCC − 0.1 1.29 1.9 2.2 2.4 2.3 3.8 V V 0.1 0.24 0.3 0.4 0.4 0.55 0.55 0.1 0.24 0.3 0.4 0.4 0.55 0.55 V Input Leakage Current VIN = VCC or GND 5.5 $0.1 $1.0 mA IOFF Power off Input Leakage Current 5.5V or VIN = GND 0 1.0 10 mA ICC Quiescent Supply Current VIN = VCC or GND 5.5 1.0 10 mA http://onsemi.com 3 NLX1G74 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î ÎÎ Î ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ Î ÎÎÎ ÎÎ Î ÎÎÎ ÎÎ ÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) TA = 25°C Parameter Maximum Clock Frequency (50% Duty Cycle) (Waveform 1) VCC (V) Test Conditions CL = 15 pF RD = 1 MW S1 = Open Min Typ TA = −40 to 85°C Min Max Unit MHz 1.8 ± 0.15 75 75 2.5 ± 0.2 150 150 3.3 ± 0.3 200 200 5.0 ± 0.5 250 250 CL = 50 pF, 3.3 ± 0.3 175 175 RD = 500 W, S1 = Open 5.0 ± 0.5 200 200 tPLH, Propagation Delay, CL = 15 pF ns 1.8 ± 0.15 2.5 6.5 12.5 2.5 13 tPHL CP to Q or Q RD = 1 MW 2.5 ± 0.2 1.5 3.8 7.5 1.5 8.0 (Waveform 1) S1 = Open 3.3 ± 0.3 1.0 2.8 6.5 1.0 7.0 5.0 ± 0.5 0.8 2.2 4.5 0.8 5.0 CL = 50 pF, 3.3 ± 0.3 1.0 3.4 7.0 1.0 7.5 RD = 500 W, S1 = Open 5.0 ± 0.5 1.0 2.6 5.0 1.0 5.5 tPLH, Propagation Delay, CL = 15 pF ns 1.8 ± 0.15 2.5 6.5 14 2.5 14.5 tPHL PR or CLR to Q or Q RD = 1 MW 2.5 ± 0.2 1.5 3.8 9.0 1.5 9.5 (Waveform 2) S1 = Open 3.3 ± 0.3 1.0 2.8 6.5 1.0 7.0 5.0 ± 0.5 0.8 2.2 5.0 0.8 5.5 CL = 50 pF, 3.3 ± 0.3 1.0 3.4 7.0 1.0 7.5 RD = 500 W, S1 = Open 5.0 ± 0.5 1.0 2.6 5.0 1.0 5.5 tS Setup Time, D to CP CL = 15 pF ns 1.8 ± 0.15 6.5 6.5 (Waveform 1) RD = 1 MW 2.5 ± 0.2 3.5 3.5 S1 = Open 3.3 ± 0.3 2.0 2.0 5.0 ± 0.5 1.5 1.5 CL = 50 pF, 3.3 ± 0.3 2.0 2.0 RD = 500 W, S1 = Open 5.0 ± 0.5 1.5 1.5 tH Hold Time, D to CP CL = 15 pF ns 1.8 ± 0.15 0.5 0.5 (Waveform 1) RD = 1 MW 2.5 ± 0.2 0.5 0.5 S1 = Open 3.3 ± 0.3 0.5 0.5 5.0 ± 0.5 0.5 0.5 CL = 50 pF, 3.3 ± 0.3 0.5 0.5 RD = 500 W, S1 = Open 5.0 ± 0.5 0.5 0.5 tW Pulse Width, CL = 15 pF ns 1.8 ± 0.15 6.0 6.0 CP, CLR, PR RD = 1 MW 2.5 ± 0.2 4.0 4.0 (Waveform 3) S1 = Open 3.3 ± 0.3 3.0 3.0 5.0 ± 0.5 2.0 2.0 CL = 50 pF, 3.3 ± 0.3 3.0 3.0 RD = 500 W, S1 = Open 5.0 ± 0.5 2.0 2.0 tREC Recover Time CL = 15 pF MHz 1.8 ± 0.15 8.0 8.0 PR; CLR to CP RD = 1 MW 2.5 ± 0.2 4.5 4.5 (Waveform 3) S1 = Open 3.3 ± 0.3 3.0 3.0 5.0 ± 0.5 3.0 3.0 CL = 50 pF, 3.3 ± 0.3 3.0 3.0 RD = 500 W, S1 = Open 5.0 ± 0.5 3.0 3.0 7. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC / 2 (per flip−flop). CPD is used to determine the no−load dynamic power consumption; PD = CPD  VCC2  fin + ICC  VCC. Symbol fMAX Max CAPACITANCE (Note 8) Symbol Condition Typical Unit Input Capacitance VCC = 5.5 V 7.0 pF COUT Output Capacitance VCC = 5.5 V 7.0 pF CPD Power Dissipation Capacitance (Note 9) Frequency = 10 MHz VCC = 3.3 V VCC = 5.0 V 16 21 pF CIN Parameter 8. TA = +25°C, f = 1 MHz 9. CPD is defined as the value of the internal equivalent capacitance which is derived from dynamic operating current consumption (ICCD) at no output loading and operating at 50% duty cycle. (See Figure 1) CPD is related to ICCD dynamic operating current by the expression: ICCD = CPD  VCC  fin + ICC(static). http://onsemi.com 4 NLX1G74 Vcc D 50% 0V th ts Vcc tw CP 50% 0V fmax tPLH, tPHL VOH Q, Q 50% VOL WAVEFORM 1 − PROPAGATION DELAYS, SETUP AND HOLD TIMES tR = tF = 3.0 ns, 10% to 90%; f = 1 MHz; tW = 500 ns Vcc PR 50% 0V Vcc CLR 50% 0V tPLH tPHL Q 50% 50% VOL VOH tPLH Q 50% tPHL 50% WAVEFORM 2 − PROPAGATION DELAYS tR = tF = 3.0 ns, 10% to 90%; f = 1 MHz; tW = 500 ns PR, CLR Vcc tw 50% 0V trec Vcc 50% CP tw 0V WAVEFORM 3 − RECOVERY TIME tR = tF = 3.0 ns from 10% to 90%; f = 1 MHz; tw = 500 ns Output Reg: VOL ≤ 0.8 V, VOH ≥ 2.0 V Figure 1. AC Waveforms VCC PULSE GENERATOR DUT RT CL Figure 2. Test Circuit http://onsemi.com 5 RL MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS UQFN8, 1.6x1.6, 0.5P CASE 523AN−01 ISSUE O 8 1 SCALE 4:1 A B D PIN ONE REFERENCE 2X 0.10 C ÉÉ ÉÉ ÇÇÇ ÇÇÇ ÉÉÉ EXPOSED Cu E A1 DATE 26 NOV 2008 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 mm FROM THE TERMINAL TIP. MOLD CMPD A3 DETAIL B DIM A A1 A3 b D E e L L1 L3 OPTIONAL CONSTRUCTION 2X 0.10 C TOP VIEW L1 (A3) DETAIL B L3 A 0.05 C b 0.05 C SIDE VIEW (0.10) C A1 SEATING PLANE (0.15) DETAIL A OPTIONAL CONSTRUCTION GENERIC MARKING DIAGRAM* 1 8X 8X L3 L XX MG e 5 3 1 XX = Specific Device Code M = Date Code G = Pb−Free Package 7 8 DETAIL A MILLIMETERS MIN MAX 0.45 0.60 0.00 0.05 0.13 REF 0.15 0.25 1.60 BSC 1.60 BSC 0.50 BSC 0.35 0.45 −−− 0.15 0.25 0.35 8X b *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.10 C A B BOTTOM VIEW 0.05 C NOTE 3 SOLDERING FOOTPRINT* 1.70 0.50 PITCH 1 0.35 7X 0.25 1.70 8X 0.53 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON36348E 8 PIN UQFN, 1.6X1.6, 0.5P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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