NRVBA1H100T3G-VF01

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package MBRA1H100, NRVBA1H100, NRVBA1H100N Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system. www.onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 100 VOLTS Features • • • • • • • Small Compact Surface Mountable Package with J−Bent Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Low Forward Voltage Drop Guardring for Stress Protection NRVBA Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SMA CASE 403D 1 Cathode MARKING DIAGRAMS A110 AYWWG Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 70 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Polarity: Cathode Lead Indicated by Polarity Band ESD Ratings: ♦ Machine Model = C ♦ Human Body Model = 3B Device Meets MSL 1 Requirements 2 Anode A110 = Device Code A = Assembly Location** Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION Device Package Shipping† MBRA1H100T3G SMA 5,000 / (Pb−Free) Tape & Reel NRVBA1H100T3G* SMA 5,000 / (Pb−Free) Tape & Reel NRVBA1H100NT3G* SMA 5,000 / (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 December, 2019 − Rev. 4 1 Publication Order Number: MBRA1H100/D MBRA1H100, NRVBA1H100, NRVBA1H100N MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TL = 167°C) Symbol Value Unit VRRM VRWM VR 100 V IO Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage and Operating Junction Temperature Range (Note 1) IFSM Tstg, TJ 1.0 50 −65 to +175 A A °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Symbol Value Unit Thermal Resistance, Junction−to−Lead (Note 2) Characteristic YJCL 14 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 75 °C/W RqJA 280 °C/W Symbol Value Unit Thermal Resistance, Junction−to−Ambient (Note 3) mm2 in2) 2. Mounted with 700 copper pad size (Approximately 1 1 oz FR4 Board. 3. Mounted with pad size approximately 6 mm2 copper, 1 oz FR4 Board. ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 4) (IF = 1.0 A, TJ = 25°C) (IF = 2.0 A, TJ = 25°C) (IF = 1.0 A, TJ = 125°C) (IF = 2.0 A, TJ = 125°C) VF Maximum Instantaneous Reverse Current (Note 4) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) IR 0.76 0.84 0.61 0.68 40 0.5 V mA mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 MBRA1H100, NRVBA1H100, NRVBA1H100N TYPICAL CHARACTERISTICS 100 IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) 100 150°C 125°C 25°C 10 1 0.1 0 0.2 0.4 0.6 1.0 0.8 1.2 0 0.4 0.2 0.6 0.8 1.0 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.6 IR, REVERSE CURRENT (mA) 10 150°C 1 0.1 125°C 0.01 0.001 0.0001 25°C 0 10 20 30 40 50 60 125°C 0.01 25°C 0.001 70 80 90 100 0.00001 0 10 20 30 40 50 60 70 90 100 80 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current RqJL = 14°C/W dc 1.5 Square Wave 1.0 0.5 140 0.1 0.0001 2.0 0 135 150°C 1 145 150 155 160 165 170 175 PFO, AVERAGE POWER DISSIPATION (W) IR, REVERSE CURRENT (mA) IF(AV), AVERAGE FORWARD CURRENT (A) 1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 10 0.00001 10 0.1 1.4 25°C 150°C 125°C 1.0 TJ = 175°C Square Wave 0.8 dc 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating Figure 6. Forward Power Dissipation www.onsemi.com 3 1.6 MBRA1H100, NRVBA1H100, NRVBA1H100N TYPICAL CHARACTERISTICS 140 TJ = 25°C C, CAPACITANCE (pF) 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (V) Figure 7. Capacitance 1000 50% (DUTY CYCLE) R(t) (C/W) 100 10 1.0 20% 10% 5.0% 2.0% 1.0% 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 10 100 1000 PULSE TIME (s) Figure 8. Thermal Response, Junction−to−Ambient (6 mm2 pad) 100 R(t) (C/W) 10 50% (DUTY CYCLE) 20% 10% 5.0% 2.0% 1.0 1.0% 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 PULSE TIME (s) Figure 9. Thermal Response, Junction−to−Ambient (1 in2 pad) www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS STYLE 1 SMA CASE 403D ISSUE J STYLE 2 SCALE 1:1 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE DATE 22 OCT 2021 STYLE 2: NO POLARITY GENERIC MARKING DIAGRAM* xxxx AYWWG STYLE 1 xxxx A Y WW G xxxx AYWWG STYLE 2 = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON04079D SMA Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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