NRVBA340NT3G

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package MBRA340, NRVBA340, NRVBA340N Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system. www.onsemi.com SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES 40 VOLTS Features • • • • • • • Small Compact Surface Mountable Package with J−Bent Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Guardring for Stress Protection NRVBA Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SMA CASE 403D STYLE 1 1 Cathode MARKING DIAGRAM Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 70 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Polarity: Cathode Lead Indicated by Polarity Band ESD Ratings: ♦ Machine Model = C ♦ Human Body Model = 3B Device Meets MSL 1 Requirements 2 Anode A34 AYWWG A34 = Device Code A = Assembly Location** Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION Device Package MBRA340T3G NRVBA340T3G SMA NRVBA340T3G−VF01 (Pb−Free) NRVBA340NT3G* Shipping† 5,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 March, 2020 − Rev. 12 1 Publication Order Number: MBRA340T3/D MBRA340, NRVBA340, NRVBA340N MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 40 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TL = 100°C) IO Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Storage/Operating Case Temperature A 3.0 A 100 Tstg, TC −55 to +150 °C TJ −55 to +150 °C Operating Junction Temperature (Note 1) Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt V/ms 10,000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RθJL RθJA 15 81 °C/W Thermal Resistance − Junction−to−Lead (Note 2) Thermal Resistance − Junction−to−Ambient (Note 2) 2. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4. ELECTRICAL CHARACTERISTICS Symbol Characteristic Value VF Maximum Instantaneous Forward Voltage (Note 3) TJ = 25°C TJ = 100°C 0.450 0.390 TJ = 25°C TJ = 100°C 0.3 15 (IF = 3.0 A) Maximum Instantaneous Reverse Current IR Unit (VR = 40 V) Volts mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 250 μs, Duty Cycle ≤ 2.0%. TYPICAL CHARACTERISTICS 1 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 TJ = 125°C 0.1 0.10 TJ = 100°C 0.20 TJ = 25°C 0.30 0.40 TJ = −55°C 0.50 1 0.1 0.10 0.60 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) TJ = 125°C TJ = 100°C TJ = −55°C TJ = 25°C 0.20 0.30 0.40 0.50 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage www.onsemi.com 2 0.60 IR, REVERSE CURRENT (AMPS) 100E−3 IR, MAXIMUM REVERSE CURRENT (AMPS) MBRA340, NRVBA340, NRVBA340N 100E−3 TJ = 125°C 10E−3 1E−3 TJ = 100°C 100E−6 10E−6 TJ = 25°C 1E−6 10E−3 TJ = 100°C 1E−3 TJ = −55°C 10E−9 1E−9 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) TJ = −55°C 10E−6 40 1E−6 0 5 dc freq = 20 kHz 4 3.5 3 2.5 2 1.5 SQUARE WAVE Ipk/IO = p Ipk/IO = 5 Ipk/IO = 10 1 0.5 0 25 50 75 100 125 150 TL, LEAD TEMPERATURE (°C) 1.6 SQUARE WAVE 1.4 TJ, DERATED OPERATING TEMPERATURE (°C) TJ = 25 °C 0 5 dc 1.2 1.0 0.8 Ipk/IO = p 0.6 Ipk/IO = 5 0.4 Ipk/IO = 10 0.2 0 Ipk/IO = 20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 6. Forward Power Dissipation C, CAPACITANCE (pF) 100 40 1.8 Figure 5. Current Derating 1000 10 20 30 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Maximum Reverse Current PFO, AVERAGE POWER DISSIPATION (WATTS) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 3. Typical Reverse Current 4.5 TJ = 25°C 100E−6 100E−9 100E−12 TJ = 125°C 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) 35 40 125 RqJA = 22 °C/W 115 105 RqJA = 43 °C/W 95 RqJA = 63 °C/W 85 RqJA = 81 °C/W 75 RqJA = 96 °C/W 65 55 0 Figure 7. Capacitance 5 35 10 15 20 25 30 VR, DC REVERSE VOLTAGE (VOLTS) Figure 8. Typical Operating Temperature Derating www.onsemi.com 3 40 R(t), TRANSIENT THERMAL RESISTANCE (°C/W) MBRA340, NRVBA340, NRVBA340N 100 D = 0.5 0.2 0.1 10 0.05 0.02 0.01 1 SINGLE PULSE 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 100 1000 t, TIME (S) R(t), TRANSIENT THERMAL RESISTANCE (°C/W) Figure 9. Thermal Response, Junction−to−Ambient (min pad) 100 D = 0.5 0.2 10 0.1 0.05 0.02 1 0.1 0.01 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 1 10 t, TIME (S) Figure 10. Thermal Response, Junction to Ambient (1 inch pad) www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS STYLE 1 SMA CASE 403D ISSUE J STYLE 2 SCALE 1:1 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE DATE 22 OCT 2021 STYLE 2: NO POLARITY GENERIC MARKING DIAGRAM* xxxx AYWWG STYLE 1 xxxx A Y WW G xxxx AYWWG STYLE 2 = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON04079D SMA Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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