NRVHP420MFDT3G

NRVHP420MFD Switch-Mode Power Rectifier This ultrafast rectifier in the dual flag SO−8 flat lead package offers designers a unique degree of versatility and design freedom. The two devices are electrically independent and can be used separately, as common cathode, as common anode or in series as a function of board level layout. The exposed pad design provides low thermal resistance. The clip attach design creates a package with very efficient die size to board area ratio. While thermal performance is nearly the same as the DPAK package height and board footprint are less than half. www.onsemi.com ULTRAFAST RECTIFIER 4 AMPERES (2x2), 200 VOLTS Features • New Package Provides Capability of Inspection and Probe After Board Mounting 1 7,8 3 5,6 • Low Forward Voltage Drop • 175°C Operating Junction Temperature • NRV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free and Halide−Free Devices MARKING DIAGRAM C1 C1 1 DFN8 5x6 (SO8FL) CASE 506BT Mechanical Characteristics: • • • • • HP420D AYWZZ C1 C1 C2 C2 C2 C2 Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements HP420D = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION Applications • Excellent Alternative to DPAK in Space−Constrained Automotive • • A1 NC A2 NC Applications Output Rectification in Switching Power Supplies Freewheeling Diode used with Inductive Loads Package Shipping† NRVHP420MFDT1G DFN8 (Pb−Free) 1500 / Tape & Reel NRVHP420MFDT3G DFN8 (Pb−Free) 5000 / Tape & Reel NRVHP420MFDWFT1G DFN8 (Pb−Free) 1500 / Tape & Reel NRVHP420MFDWFT3G DFN8 (Pb−Free) 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 April, 2018 − Rev. 2 1 Publication Order Number: NHP420MFD/D NRVHP420MFD MAXIMUM RATINGS (per diode unless noted) Symbol Rating Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 200 Average Rectified Forward Current (Rated VR, TC = 167°C) IF(AV) 2.0 A Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 165°C) IFRM 4.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 40 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature TJ −55 to +175 °C EAS 10 mJ Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) V ESD Rating (Human Body Model) 2 ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (per diode unless noted) Characteristic Thermal Resistance, Junction−to−Case, Steady State (Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) Symbol Typ Max Unit RθJC − 7.2 °C/W 0.76 0.89 0.86 0.96 0.85 1.0 0.95 1.10 1.00 0.03 35 0.5 ELECTRICAL CHARACTERISTICS (per diode unless noted) Instantaneous Forward Voltage (Note 1) (iF = 3.0 Amps, TJ = 125°C) (iF = 3.0 Amps, TJ = 25°C) (iF = 6.0 Amps, TJ = 125°C) (iF = 6.0 Amps, TJ = 25°C) vF Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 125°C) (Rated dc Voltage, TJ = 25°C) iR V mA Reverse Recovery Time IF = 3.0 A, VR = 30 V, dl/dt = 50 A/ms, TJ = 25°C trr 20 30 ns Reverse Recovery Time IF = 3.0 A, VR = 30 V, dl/dt = 50 A/ms, TJ = 125°C trr 23 40 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 NRVHP420MFD TYPICAL CHARACTERISTICS 100 iF, INSTANTANEOUS FORWARD CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 175°C 10 TA = 150°C TA = 125°C 1 TA = 85°C TA = 25°C TA = 125°C 1 TA = 85°C TA = 25°C TA = −55°C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics 1.E−04 1.E−03 1.E−05 TA = 175°C 1.E−06 TA = 150°C TA = 125°C 1.E−07 TA = 85°C 1.E−08 TA = 25°C 1.E−04 TA = 175°C 1.E−05 TA = 150°C TA = 125°C 1.E−06 TA = 85°C 1.E−07 1.E−09 TA = −55°C 1.E−10 TA = −55°C 1.E−09 1.E−12 20 40 60 80 100 120 140 160 180 200 1.E−10 0 20 40 60 80 100 120 140 160 180 200 VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics IF(AV), AVERAGE FORWARD CURRENT (A) 0 100 TJ = 25°C 10 1 0 TA = 25°C 1.E−08 1.E−11 C, JUNCTION CAPACITANCE (pF) TA = 150°C IR, INSTANTANEOUS REVERSE CURRENT (A) IR, INSTANTANEOUS REVERSE CURRENT (A) TA = −55°C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 TA = 175°C 10 20 40 60 80 100 120 140 160 180 200 4 DC 3 Square Wave 2 1 RqJC = 7.2°C/W 0 0 20 40 60 80 100 120 140 160 180 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating per Device www.onsemi.com 3 NRVHP420MFD TYPICAL CHARACTERISTICS 3.0 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) IPK/IAV = 20 TJ = 175°C 2.5 IPK/IAV = 10 2.0 IPK/IAV = 5 Square Wave 1.5 DC 1.0 0.5 0 0 0.5 1.0 1.5 2.0 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation 100 50% Duty Cycle R(t) (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 8. Typical Thermal Characteristics www.onsemi.com 4 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual) CASE 506BT ISSUE F 1 2X SCALE 2:1 0.20 C D A B D1 8 7 6 ÉÉ ÉÉ ÉÉ PIN ONE IDENTIFIER NOTE 7 1 2 2X 0.20 C 5 DATE 23 NOV 2021 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 MM FROM THE TERMINAL TIP. 4. PROFILE TOLERANCE APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST POINT ON THE PACKAGE BODY. 7. A VISUAL INDICATOR FOR PIN 1 MUST BE LOCATED IN THIS AREA. E1 E 4X h 3 4 c TOP VIEW A1 0.10 C A DETAIL B 0.10 C NOTE 4 C SIDE VIEW DETAIL A D2 D3 4X e 1 SEATING PLANE NOTE 6 ALTERNATE CONSTRUCTION DETAIL A L K 4 DIM A A1 b b1 c D D1 D2 D3 E E1 E2 e G h K K1 L M N MILLIMETERS NOM MIN MAX −−− 0.90 1.10 −−− −−− 0.05 0.33 0.42 0.51 0.33 0.42 0.51 0.20 −−− 0.33 5.15 BSC 4.70 4.90 5.10 3.90 4.10 4.30 1.50 1.70 1.90 6.15 BSC 5.70 5.90 6.10 3.90 4.15 4.40 1.27 BSC 0.45 0.55 0.65 −−− −−− 12 _ 0.51 −−− −−− 0.56 −−− −−− 0.48 0.61 0.71 3.25 3.50 3.75 1.80 2.00 2.20 SOLDERING FOOTPRINT* DETAIL B 4.56 M 4X b1 N 4X 8 G 5 8X 2X 2X 2.08 8X E2 0.75 0.56 b K1 BOTTOM VIEW 0.10 C A B 0.05 C GENERIC MARKING DIAGRAM* 1 XXXXXX AYWZZ NOTE 3 4.84 4X 6.59 3.70 0.70 4X XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability 1.40 2.30 1.00 1.27 PITCH 5.55 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON50417E Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DFN8 5X6, 1.27P DUAL FLAG (SO8FL−DUAL) PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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