NSBA144EDXV6T5G

NSBA114EDXV6T1, NSBA114EDXV6T5 Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSBA114EDXV6T1 series, two BRT devices are housed in the SOT−563 package which is ideal for low−power surface mount applications where board space is at a premium. • • • • • http://onsemi.com (3) (2) R1 (1) R2 Q1 Q2 R2 R1 (4) Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch Tape and Reel Lead Free Solder Plating (5) 6 (6) 54 1 23 SOT−563 CASE 463A PLASTIC MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2) Rating MARKING DIAGRAM Symbol Value Unit Collector-Base Voltage VCBO −50 Vdc Collector-Emitter Voltage VCEO −50 Vdc IC −100 mAdc Collector Current xx = Specific Device Code (see table on page 2) D = Date Code THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Symbol Max Unit PD 357 (Note 1) 2.9 (Note 1) mW Derate above 25°C Thermal Resistance Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Junction and Storage Temperature Range mW/°C 350 (Note 1) °C/W Symbol Max Unit PD 500 (Note 1) 4.0 (Note 1) mW RJA Derate above 25°C Thermal Resistance Junction-to-Ambient xx D ORDERING INFORMATION Device Package Shipping NSBA114EDXV6T1 SOT−563 4 mm pitch 4000/Tape & Reel NSBA114EDXV6T5 SOT−563 2 mm pitch 8000/Tape & Reel DEVICE MARKING INFORMATION mW/°C RJA 250 (Note 1) °C/W TJ, Tstg −55 to +150 °C See specific marking information in the device marking table on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. 1. FR−4 @ Minimum Pad  Semiconductor Components Industries, LLC, 2004 January, 2004 − Rev. 3 1 Publication Order Number: NSBA114EDXV6/D NSBA114EDXV6T1, NSBA114EDXV6T5 DEVICE MARKING AND RESISTOR VALUES Device Package Marking R1 (k
) R2 (k
) NSBA114EDXV6T1 SOT−563 0A 10 10 NSBA124EDXV6T1 SOT−563 0B 22 22 NSBA144EDXV6T1 SOT−563 0C 47 47 NSBA114YDXV6T1 SOT−563 0D 10 47 NSBA114TDXV6T1 (Notes 2) SOT−563 0E 10 ∞ NSBA143TDXV6T1 (Notes 2) SOT−563 0F 4.7 ∞ NSBA113EDXV6T1 (Notes 2) SOT−563 0G 1.0 1.0 NSBA123EDXV6T1 (Notes 2) SOT−563 0H 2.2 2.2 NSBA143EDXV6T1 (Notes 2) SOT−563 0J 4.7 4.7 NSBA143ZDXV6T1 (Notes 2) SOT−563 0K 4.7 47 NSBA124XDXV6T1 (Notes 2) SOT−563 0L 22 47 NSBA123JDXV6T1 (Notes 2) SOT−563 0M 2.2 47 NSBA115EDXV6T1 (Notes 2) SOT−563 0N 100 100 NSBA144WDXV6T1 (Notes 2) SOT−563 0P 47 22 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = −50 V, IE = 0) ICBO − − −100 nAdc Collector-Emitter Cutoff Current (VCE = −50 V, IB = 0) ICEO − − −500 nAdc Emitter-Base Cutoff Current (VEB = −6.0 V, IC = 0) IEBO − − − − − − − − − − − − − − − − − − − − − − − − − − − − −0.5 −0.2 −0.1 −0.2 −0.9 −1.9 −4.3 −2.3 −1.5 −0.18 −0.13 −0.2 −0.05 −0.13 mAdc Collector-Base Breakdown Voltage (IC = −10 A, IE = 0) V(BR)CBO −50 − − Vdc Collector-Emitter Breakdown Voltage (Note 3) (IC = −2.0 mA, IB = 0) V(BR)CEO −50 − − Vdc VCE(sat) − − −0.25 Vdc Characteristic OFF CHARACTERISTICS NSBA114EDXV6T1 NSBA124EDXV6T1 NSBA144EDXV6T1 NSBA114YDXV6T1 NSBA114TDXV6T1 NSBA143TDXV6T1 NSBA113EDXV6T1 NSBA123EDXV6T1 NSBA143EDXV6T1 NSBA143ZDXV6T1 NSBA124XDXV6T1 NSBA123JDXV6T1 NSBA115EDXV6T1 NSBA144WDXV6T1 ON CHARACTERISTICS (Note 3) Collector-Emitter Saturation Voltage (IC = −10 mA, IE = −0.3 mA) (IC = −10 mA, IB = −5 mA) NSBA113EDXV6T1/NSBA123EDXV6T1 (IC = −10 mA, IB = −1 mA) NSBA114TDXV6T1/NSBA143TDXV6T1 NSBA143EDXV6T1/NSBA143ZDXV6T1/NSBA124XDXV6T1 2. New resistor combinations. Updated curves to follow in subsequent data sheets. 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% http://onsemi.com 2 NSBA114EDXV6T1, NSBA114EDXV6T5 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) (continued) Characteristic Symbol Min Typ Max Unit hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 250 250 5.0 15 27 140 130 140 130 140 − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 VOH −4.9 − − Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 k
0.8 0.17 − 0.8 0.055 0.38 0.038 1.7 1.0 0.21 − 1.0 0.1 0.47 0.047 2.1 1.2 0.25 − 1.2 0.185 0.56 0.056 2.6 ON CHARACTERISTICS (Note 3) (continued) DC Current Gain (VCE = −10 V, IC = −5.0 mA) Output Voltage (on) (VCC = −5.0 V, VB = −2.5 V, RL = 1.0 k
) (VCC = −5.0 V, VB = −3.5 V, RL = 1.0 k
) (VCC = −5.0 V, VB = −5.5 V, RL = 1.0 k
) (VCC = −5.0 V, VB = −4.0 V, RL = 1.0 k
) NSBA114EDXV6T1 NSBA124EDXV6T1 NSBA144EDXV6T1 NSBA114YDXV6T1 NSBA114TDXV6T1 NSBA143TDXV6T1 NSBA113EDXV6T1 NSBA123EDXV6T1 NSBA143EDXV6T1 NSBA143ZDXV6T1 NSBA124XDXV6T1 NSBA123JDXV6T1 NSBA115EDXV6T1 NSBA144WDXV6T1 VOL NSBA114EDXV6T1 NSBA124EDXV6T1 NSBA114YDXV6T1 NSBA114TDXV6T1 NSBA143TDXV6T1 NSBA113EDXV6T1 NSBA123EDXV6T1 NSBA143EDXV6T1 NSBA143ZDXV6T1 NSBA124XDXV6T1 NSBA123JDXV6T1 NSBA144EDXV6T1 NSBA115EDXV6T1 NSBA144WDXV6T1 Output Voltage (off) (VCC = −5.0 V, VB = −0.5 V, RL = 1.0 k
) (VCC = −5.0 V, VB = −0.05 V, RL = 1.0 k
) NSBA113EDXV6T1 NSBA114TDXV6T1 (VCC = −5.0 V, VB = − 0.25 V, RL = 1.0 k
) NSBA143TDXV6T1 NSBA123EDXV6T1 NSBA143ZDXV6T1 Input Resistor NSBA114EDXV6T1 NSBA124EDXV6T1 NSBA144EDXV6T1 NSBA114YDXV6T1 NSBA114TDXV6T1 NSBA143TDXV6T1 NSBA113EDXV6T1 NSBA123EDXV6T1 NSBA143EDXV6T1 NSBA143ZDXV6T1 NSBA124XDXV6T1 NSBA123JDXV6T1 NSBA115EDXV6T1 NSBA144WDXV6T1 Resistor Ratio NSBA114EDXV6T1/NSBA124EDXV6T1/ NSBA144EDXV6T1/NSBA115EDXV6T1 NSBA114YDXV6T1 NSBA114TDXV6T1/NSBA143TDXV6T1 NSBA113EDXV6T1/NSBA123EDXV6T1/NSBA143EDXV6T1 NSBA143ZDXV6T1 NSBA124XDXV6T1 NSBA123JDXV6T1 NSBA144WDXV6T1 R1/R2 2. New resistor combinations. Updated curves to follow in subsequent data sheets. 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% http://onsemi.com 3 Vdc NSBA114EDXV6T1, NSBA114EDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114EDXV6T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) ALL NSBA114EDXV6T1 SERIES DEVICES PD, POWER DISSIPATION (mW) 300 250 200 150 100 RJA = 490°C/W 50 0 −50 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 1 IC/IB = 10 TA=−25°C
0.1 25°C 75°C
0.01
20 0
40 50 IC, COLLECTOR CURRENT (mA) Figure 1. Derating Curve − ALL DEVICES Figure 2. VCE(sat) versus IC TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114EDXV6T1 4 VCE = 10 V Cob , CAPACITANCE (pF) hFE , DC CURRENT GAIN (NORMALIZED) 1000 TA=75°C 25°C 100 10 −25°C 1 10 IC, COLLECTOR CURRENT (mA) 3 2 1 0 100 f = 1 MHz lE = 0 V TA = 25°C 0 Figure 3. DC Current Gain 100 25°C 75°C TA=−25°C 10 1
0.1
0.01
0.001 VO = 5 V 0 1
2 3
4
5
6
7 Vin, INPUT VOLTAGE (VOLTS) 50 Figure 4. Output Capacitance V in , INPUT VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) 100 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)
8
9 Figure 5. Output Current versus Input Voltage TA=−25°C 10 25°C 75°C 1
0.1 10 VO = 0.2 V 10 0
20
30 IC, COLLECTOR CURRENT (mA)
40 Figure 6. Input Voltage versus Output Current http://onsemi.com 4
50 NSBA114EDXV6T1, NSBA114EDXV6T5 1000 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — NSBA124EDXV6T1 IC/IB = 10 1 25°C TA=−25°C 75°C
0.1 0.01 0
40
20 IC, COLLECTOR CURRENT (mA) TA=75°C 10 1 Figure 8. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 3 2 1 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) TA=−25°C 10 1
0.1
0.01
0.001 50 Figure 9. Output Capacitance 100 25°C 75°C f = 1 MHz lE = 0 V TA = 25°C V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 0 VO = 5 V 0 1
2
3
4
5
6
7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 10 25°C 75°C 1 0 10
8
9 Figure 10. Output Current versus Input Voltage TA=−25°C
0.1 100 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC 0 25°C −25°C 100 10
50 VCE = 10 V
20
30 IC, COLLECTOR CURRENT (mA)
40
50 Figure 11. Input Voltage versus Output Current http://onsemi.com 5 10 NSBA114EDXV6T1, NSBA114EDXV6T5 1 1000 IC/IB = 10 TA=−25°C 25°C 75°C
0.1
0.01 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — NSBA144EDXV6T1 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA=75°C 25°C −25°C 100 10 40 1 10 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 IC, COLLECTOR CURRENT (mA) 0.6 0.4 0.2 0 0 −25°C 1
0.1
0.01 Figure 14. Output Capacitance VO = 5 V 1 0 2 3
4
5
6
7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 25°C 75°C 1 0.1 0 10
8 9 Figure 15. Output Current versus Input Voltage 100 10 25°C TA=75°C 10
0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 100 f = 1 MHz lE = 0 V TA = 25°C 0.8 100
20
30 IC, COLLECTOR CURRENT (mA)
40 Figure 16. Input Voltage versus Output Current http://onsemi.com 6
50 10 NSBA114EDXV6T1, NSBA114EDXV6T5 1 180 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114YDXV6T1 TA=−25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 25°C 140 −25°C 120 100 80 60 40 20 0 80 TA=75°C VCE = 10 V 160 2 1 4 6 Figure 17. VCE(sat) versus IC 100 TA=75°C 3.5 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 4 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 10 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 25°C TA=−25°C 75°C 1 0 10 8 10 Figure 20. Output Current versus Input Voltage 10 0.1 25°C −25°C 1 50 Figure 19. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 80 90 100 Figure 18. DC Current Gain 4.5 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current http://onsemi.com 7 NSBA114EDXV6T1, NSBA114EDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114TDXV6T1 HFE, DC CURRENT GAIN (NORMALIZED) 1000 TA = 25°C VCE = 10 V VCE = 5.0 V 100 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 22. DC Current Gain TYPICAL ELECTRICAL CHARACTERISTICS — NSBA143TDXV6T1 HFE, DC CURRENT GAIN (NORMALIZED) 1000 TA = 25°C VCE = 10 V VCE = 5.0 V 100 1.0 10 IC, COLLECTOR CURRENT (mA) Figure 23. DC Current Gain http://onsemi.com 8 100 NSBA114EDXV6T1, NSBA114EDXV6T5 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 0.1 75°C 25°C −25°C IC/IB = 10 0.01 0 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7 hFE, DC CURRENT GAIN (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS — NSBA115EDXV6T1 1000 75°C TA = −25°C 100 25°C 10 VCE = 10 V 1 1 10 IC, COLLECTOR CURRENT (mA) Figure 24. Maximum Collector Voltage versus Collector Current Figure 25. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 1.0 f = 1 MHz IE = 0 V TA = 25°C 0.8 0.6 0.4 0.2 25°C 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 TA = −25°C 1 VO = 5 V 0 1 2 3 4 TA = −25°C 10 VO = 0.2 V 75°C 0 2 6 7 8 9 10 Figure 27. Output Current versus Input Voltage 100 1 5 Vin, INPUT VOLTAGE (VOLTS) Figure 26. Output Capacitance 25°C 75°C 10 0.1 0 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.2 0 100 4 6 8 10 12 14 16 IC, COLLECTOR CURRENT (mA) 18 Figure 28. Input Voltage versus Output Current http://onsemi.com 9 20 NSBA114EDXV6T1, NSBA114EDXV6T5 hFE, DC CURRENT GAIN (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS — NSBA144WDXV6T1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 TA = −25°C 75°C 0.1 25°C IC/IB = 10 0.01 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 50 1000 75°C TA = −25°C 100 25°C VCE = 10 V 10 1 10 IC, COLLECTOR CURRENT (mA) Figure 29. Maximum Collector Voltage versus Collector Current Figure 30. DC Current Gain 100 1.2 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 1.0 0.8 0.6 0.4 0.2 75°C 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 TA = −25°C 10 25°C 1 0.1 0.01 0.001 0 VO = 5 V 0 1 2 3 4 VO = 0.2 V 1 TA = −25°C 75°C 25°C 0 6 7 8 9 10 11 Figure 32. Output Current versus Input Voltage 100 10 5 Vin, INPUT VOLTAGE (VOLTS) Figure 31. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.4 0 100 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 33. Input Voltage versus Output Current http://onsemi.com 10 NSBA114EDXV6T1, NSBA114EDXV6T5 PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE O A −X− 5 6 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. C K MILLIMETERS MIN MAX 1.50 1.70 1.10 1.30 0.50 0.60 0.17 0.27 0.50 BSC 0.08 0.18 0.10 0.30 1.50 1.70 4 B −Y− 3 D G J 5 PL 6 0.08 (0.003) STYLE 1: PIN 1. 2. 3. 4. 5. 6. EMITTER 1 BASE 1 COLLECTOR 2 EMITTER 2 BASE 2 COLLECTOR 1 DIM A B C D G J K S S M X Y STYLE 2: PIN 1. 2. 3. 4. 5. 6. STYLE 3: PIN 1. 2. 3. 4. 5. 6. EMITTER 1 EMITTER2 BASE 2 COLLECTOR 2 BASE 1 COLLECTOR 1 CATHODE 1 CATHODE 1 ANODE/ANODE 2 CATHODE 2 CATHODE 2 ANODE/ANODE 1 STYLE 4: PIN 1. 2. 3. 4. 5. 6. COLLECTOR COLLECTOR BASE EMITTER COLLECTOR COLLECTOR SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm 
inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 11 INCHES MIN MAX 0.059 0.067 0.043 0.051 0.020 0.024 0.007 0.011 0.020 BSC 0.003 0.007 0.004 0.012 0.059 0.067 NSBA114EDXV6T1, NSBA114EDXV6T5 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 12 For additional information, please contact your local Sales Representative. NSBA114EDXV6/D