DATA SHEET
www.onsemi.com
Dual NPN Bias Resistor
Transistors
R1 = 47 kW, R2 = 47 kW
PIN CONNECTIONS
(3)
NPN Transistors with Monolithic Bias
Resistor Network
MUN5213DW1,
NSBC144EDXV6,
NSBC144EDP6
(2)
R1
R2
Q1
Q2
R2
(4)
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
R1
(5)
(6)
MARKING DIAGRAMS
6
SOT−363
CASE 419B−02
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable*
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(TA = 25°C, common for Q1 and Q2, unless otherwise noted)
Rating
7C MG
G
1
Features
•
•
•
•
(1)
SOT−563
CASE 463A
SOT−963
CASE 527AD
7C/D
M
G
7C MG
1
DM
1
= Specific Device Code
= Date Code*
= Pb-Free Package
Symbol
Max
Unit
Collector-Base Voltage
VCBO
50
Vdc
(Note: Microdot may be in either location)
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
*Date Code orientation may vary depending
upon manufacturing location.
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
Collector Current − Continuous
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Package
Shipping†
MUN5213DW1T1G,
SMUN5213DW1T1G*
SOT−363
3,000 / Tape & Reel
MUN5213DW1T3G,
NSVMUN5213DW1T3G*
SOT−363
10,000 / Tape & Reel
NSBC144EDXV6T1G,
NSVBC144EDXV6T1G*
SOT−563
4,000 / Tape & Reel
NSBC144EDP6T5G
SOT−963
8,000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2017
August, 2022 − Rev. 4
1
Publication Order Number:
DTC144ED/D
MUN5213DW1, NSBC144EDXV6, NSBC144EDP6
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
187
256
1.5
2.0
mW
MUN5213DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
PD
(Note 1)
(Note 2)
RqJA
mW/°C
670
490
°C/W
250
385
2.0
3.0
mW
MUN5213DW1 (SOT−363) BOTH JUNCTION HEATED (Note 3)
PD
Total Device Dissipation
(Note 1)
TA = 25°C
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 2)
RqJA
(Note 1)
Thermal Resistance,
Junction to Lead (Note 1)
(Note 2)
RqJL
Junction and Storage Temperature Range
TJ, Tstg
493
325
188
208
mW/°C
°C/W
°C/W
−55 to +150
°C
357
2.9
mW
mW/°C
NSBC144EDXV6 (SOT−563) ONE JUNCTION HEATED
PD
Total Device Dissipation
(Note 1)
TA = 25°C
Derate above 25°C
(Note 1)
Thermal Resistance,
Junction to Ambient
RqJA
(Note 1)
350
°C/W
NSBC144EDXV6 (SOT−563) BOTH JUNCTION HEATED (Note 3)
PD
Total Device Dissipation
(Note 1)
TA = 25°C
Derate above 25°C
(Note 1)
Thermal Resistance,
Junction to Ambient
RqJA
(Note 1)
Junction and Storage Temperature Range
TJ, Tstg
500
4.0
250
mW
mW/°C
°C/W
−55 to +150
°C
231
269
1.9
2.2
MW
NSBC144EDP6 (SOT−963) ONE JUNCTION HEATED
PD
Total Device Dissipation
(Note 4)
TA = 25°C
(Note 5)
Derate above 25°C
(Note 4)
(Note 5)
Thermal Resistance,
Junction to Ambient
(Note 5)
RqJA
(Note 4)
540
464
mW/°C
°C/W
NSBC144EDP6 (SOT−963) BOTH JUNCTION HEATED (Note 3)
PD
Total Device Dissipation
(Note 4)
TA = 25°C
(Note 5)
Derate above 25°C
(Note 4)
(Note 5)
Thermal Resistance,
Junction to Ambient
(Note 5)
RqJA
(Note 4)
Junction and Storage Temperature Range
1.
2.
3.
4.
5.
TJ, Tstg
FR−4 @ Minimum Pad.
FR−4 @ 1.0 × 1.0 Inch Pad.
Both junction heated values assume total power is sum of two equally powered channels.
FR−4 @ 100 mm2, 1 oz. copper traces, still air.
FR−4 @ 500 mm2, 1 oz. copper traces, still air.
www.onsemi.com
2
339
408
2.7
3.3
369
306
−55 to +150
MW
mW/°C
°C/W
°C
MUN5213DW1, NSBC144EDXV6, NSBC144EDP6
ELECTRICAL CHARACTERISTICS (TA = 25°C, common for Q1 and Q2, unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
−
−
100
−
−
500
−
−
0.1
50
−
−
50
−
−
80
140
−
−
−
0.25
−
1.2
−
−
1.9
−
−
−
0.2
4.9
−
−
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
Collector-Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
Collector-Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
Collector-Emitter Breakdown Voltage (Note 6)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
nAdc
nAdc
mAdc
Vdc
Vdc
ON CHARACTERISTICS
hFE
DC Current Gain (Note 6)
(IC = 5.0 mA, VCE = 10 V)
Collector-Emitter Saturation Voltage (Note 6)
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
Input Voltage (Off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
Input Voltage (On)
(VCE = 0.2 V, IC = 3.0 mA)
Vi(on)
Output Voltage (On)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
VOL
Output Voltage (Off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
Input Resistor
R1
32.9
47
61.1
Resistor Ratio
R1/R2
0.8
1.0
1.2
6. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
PD, POWER DISSIPATION (mW)
400
350
300
250
200
(1) SOT−363; 1.0 × 1.0 Inch Pad
(2) SOT−563; Minimum Pad
(3) SOT−963; 100 mm2, 1 oz. Copper Trace
(1) (2) (3)
150
100
50
0
−50
−25
0
25
50
75
100
125
150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
www.onsemi.com
3
V
Vdc
Vdc
Vdc
Vdc
kW
MUN5213DW1, NSBC144EDXV6, NSBC144EDP6
350
10
IC/IB = 10
1
TA = −25°C
25°C
75°C
0.1
0.01
0
VCE = 2 V
300
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
TYPICAL CHARACTERISTICS
MUN5213DW1, NSBC144EDXV6
250
25°C
−40°C
150
−55°C
100
50
0
0.1
Figure 2. VCE(sat) vs. IC
VCE = 10 V
300
125°C
85°C
25°C
200
−40°C
150
−55°C
100
50
0
0.1
1
10
IC, COLLECTOR CURRENT (mA)
f = 10 kHz
IE = 0 A
TA = 25°C
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
100
0
100
20
30
40
VR, REVERSE VOLTAGE (V)
50
100
10
VO = 0.2 V
TA = −25°C
75°C
Vin, INPUT VOLTAGE (V)
IC, COLLECTOR CURRENT (mA)
10
Figure 5. Output Capacitance
Figure 4. DC Current Gain
25°C
1
0.1
0.01
0.001
100
3.2
TA = 150°C
250
1
10
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
Cob, OUTPUT CAPACITANCE (pF)
350
TA = 150°C
85°C
200
50
10
10
20
40
IC, COLLECTOR CURRENT (mA)
125°C
VO = 5 V
0
2
4
6
Vin, INPUT VOLTAGE (V)
TA = −25°C
10
10
75°C
1
0.1
8
25°C
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 6. Output Current vs. Input Voltage
Figure 7. Input Voltage vs. Output Current
www.onsemi.com
4
50
MUN5213DW1, NSBC144EDXV6, NSBC144EDP6
10
1000
IC/IB = 10
25°C
1
−55°C
150°C
0.1
0.01
0
30
20
40
10
IC, COLLECTOR CURRENT (mA)
100
10
1
50
1
10
IC, COLLECTOR CURRENT (mA)
0.1
100
IC, COLLECTOR CURRENT (mA)
1.6
1.2
0.8
0.4
10
20
30
40
VR, REVERSE VOLTAGE (V)
−55°C
10
25°C
1
0.1
0.01
0.001
50
150°C
VO = 5 V
0
4
12
16
20
8
Vin, INPUT VOLTAGE (V)
100
25°C
10
−55°C
150°C
1
VO = 0.2 V
0.1
0
24
Figure 11. Output Current vs. Input Voltage
Figure 10. Output Capacitance
Vin, INPUT VOLTAGE (V)
Cob, OUTPUT CAPACITANCE (pF)
f = 10 kHz
IE = 0 A
TA = 25°C
0
100
Figure 9. DC Current Gain
2.4
2.0
150°C
−55°C
Figure 8. VCE(sat) vs. IC
0
25°C
VCE = 10 V
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
TYPICAL CHARACTERISTICS
NSBC144EDP6
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 12. Input Voltage vs. Output Current
www.onsemi.com
5
50
28
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
1
SCALE 2:1
DATE 11 DEC 2012
2X
aaa H D
D
H
A
D
6
5
GAGE
PLANE
4
1
2
L
L2
E1
E
DETAIL A
3
aaa C
2X
bbb H D
2X 3 TIPS
e
B
6X
b
ddd
TOP VIEW
C A-B D
M
A2
DETAIL A
A
6X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
ccc C
A1
SIDE VIEW
C
SEATING
PLANE
END VIEW
c
RECOMMENDED
SOLDERING FOOTPRINT*
6X
DIM
A
A1
A2
b
C
D
E
E1
e
L
L2
aaa
bbb
ccc
ddd
MILLIMETERS
MIN
NOM MAX
−−−
−−−
1.10
0.00
−−−
0.10
0.70
0.90
1.00
0.15
0.20
0.25
0.08
0.15
0.22
1.80
2.00
2.20
2.00
2.10
2.20
1.15
1.25
1.35
0.65 BSC
0.26
0.36
0.46
0.15 BSC
0.15
0.30
0.10
0.10
GENERIC
MARKING DIAGRAM*
6
XXXMG
G
6X
0.30
INCHES
NOM MAX
−−− 0.043
−−− 0.004
0.035 0.039
0.008 0.010
0.006 0.009
0.078 0.086
0.082 0.086
0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.006 BSC
0.006
0.012
0.004
0.004
MIN
−−−
0.000
0.027
0.006
0.003
0.070
0.078
0.045
0.66
1
2.50
0.65
PITCH
XXX = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
*Date Code orientation and/or position may
vary depending upon manufacturing location.
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC−88/SC70−6/SOT−363
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
DATE 11 DEC 2012
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
STYLE 2:
CANCELLED
STYLE 3:
CANCELLED
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. COLLECTOR
4. EMITTER
5. BASE
6. ANODE
STYLE 5:
PIN 1. ANODE
2. ANODE
3. COLLECTOR
4. EMITTER
5. BASE
6. CATHODE
STYLE 6:
PIN 1. ANODE 2
2. N/C
3. CATHODE 1
4. ANODE 1
5. N/C
6. CATHODE 2
STYLE 7:
PIN 1. SOURCE 2
2. DRAIN 2
3. GATE 1
4. SOURCE 1
5. DRAIN 1
6. GATE 2
STYLE 8:
CANCELLED
STYLE 9:
PIN 1. EMITTER 2
2. EMITTER 1
3. COLLECTOR 1
4. BASE 1
5. BASE 2
6. COLLECTOR 2
STYLE 10:
PIN 1. SOURCE 2
2. SOURCE 1
3. GATE 1
4. DRAIN 1
5. DRAIN 2
6. GATE 2
STYLE 11:
PIN 1. CATHODE 2
2. CATHODE 2
3. ANODE 1
4. CATHODE 1
5. CATHODE 1
6. ANODE 2
STYLE 12:
PIN 1. ANODE 2
2. ANODE 2
3. CATHODE 1
4. ANODE 1
5. ANODE 1
6. CATHODE 2
STYLE 13:
PIN 1. ANODE
2. N/C
3. COLLECTOR
4. EMITTER
5. BASE
6. CATHODE
STYLE 14:
PIN 1. VREF
2. GND
3. GND
4. IOUT
5. VEN
6. VCC
STYLE 15:
PIN 1. ANODE 1
2. ANODE 2
3. ANODE 3
4. CATHODE 3
5. CATHODE 2
6. CATHODE 1
STYLE 16:
PIN 1. BASE 1
2. EMITTER 2
3. COLLECTOR 2
4. BASE 2
5. EMITTER 1
6. COLLECTOR 1
STYLE 17:
PIN 1. BASE 1
2. EMITTER 1
3. COLLECTOR 2
4. BASE 2
5. EMITTER 2
6. COLLECTOR 1
STYLE 18:
PIN 1. VIN1
2. VCC
3. VOUT2
4. VIN2
5. GND
6. VOUT1
STYLE 19:
PIN 1. I OUT
2. GND
3. GND
4. V CC
5. V EN
6. V REF
STYLE 20:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
STYLE 21:
PIN 1. ANODE 1
2. N/C
3. ANODE 2
4. CATHODE 2
5. N/C
6. CATHODE 1
STYLE 22:
PIN 1. D1 (i)
2. GND
3. D2 (i)
4. D2 (c)
5. VBUS
6. D1 (c)
STYLE 23:
PIN 1. Vn
2. CH1
3. Vp
4. N/C
5. CH2
6. N/C
STYLE 24:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
STYLE 25:
PIN 1. BASE 1
2. CATHODE
3. COLLECTOR 2
4. BASE 2
5. EMITTER
6. COLLECTOR 1
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
STYLE 27:
PIN 1. BASE 2
2. BASE 1
3. COLLECTOR 1
4. EMITTER 1
5. EMITTER 2
6. COLLECTOR 2
STYLE 28:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
STYLE 29:
PIN 1. ANODE
2. ANODE
3. COLLECTOR
4. EMITTER
5. BASE/ANODE
6. CATHODE
STYLE 30:
PIN 1. SOURCE 1
2. DRAIN 2
3. DRAIN 2
4. SOURCE 2
5. GATE 1
6. DRAIN 1
Note: Please refer to datasheet for
style callout. If style type is not called
out in the datasheet refer to the device
datasheet pinout or pin assignment.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC−88/SC70−6/SOT−363
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
ISSUE H
6
1
SCALE 4:1
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT−563, 6 LEAD
DATE 26 JAN 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SOT−563, 6 LEAD
CASE 463A
ISSUE H
DATE 26 JAN 2021
GENERIC
MARKING DIAGRAM*
XX MG
1
XX = Specific Device Code
M = Month Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT−563, 6 LEAD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−963
CASE 527AD−01
ISSUE E
DATE 09 FEB 2010
SCALE 4:1
D
X
Y
6
5
4
1
2
3
A
HE
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
DIM
A
b
C
D
E
e
HE
L
L2
C
SIDE VIEW
TOP VIEW
e
6X
6X L2
6X
BOTTOM VIEW
L
MILLIMETERS
MIN
NOM
MAX
0.34
0.37
0.40
0.10
0.15
0.20
0.07
0.12
0.17
0.95
1.00
1.05
0.75
0.80
0.85
0.35 BSC
0.95
1.00
1.05
0.19 REF
0.05
0.10
0.15
GENERIC
MARKING DIAGRAM*
b
0.08 X Y
XM
1
STYLE 1:
PIN 1. EMITTER 1
2. BASE 1
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
6. COLLECTOR 1
STYLE 2:
PIN 1. EMITTER 1
2. EMITTER2
3. BASE 2
4. COLLECTOR 2
5. BASE 1
6. COLLECTOR 1
STYLE 3:
PIN 1. CATHODE 1
2. CATHODE 1
3. ANODE/ANODE 2
4. CATHODE 2
5. CATHODE 2
6. ANODE/ANODE 1
STYLE 4:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
STYLE 5:
PIN 1. CATHODE
2. CATHODE
3. ANODE
4. ANODE
5. CATHODE
6. CATHODE
STYLE 6:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
STYLE 7:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. ANODE
6. CATHODE
STYLE 8:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
STYLE 9:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
STYLE 10:
PIN 1. CATHODE 1
2. N/C
3. CATHODE 2
4. ANODE 2
5. N/C
6. ANODE 1
DOCUMENT NUMBER:
DESCRIPTION:
X
M
= Specific Device Code
= Month Code
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
RECOMMENDED
MOUNTING FOOTPRINT
6X
0.20
6X
0.35
PACKAGE
OUTLINE
1.20
0.35
PITCH
DIMENSIONS: MILLIMETERS
98AON26456D
SOT−963, 1X1, 0.35P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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