NSM4002MR6T1G

NSM4002MR6 Dual NPN Transistors for Driving LEDs NSM4002MR6 contains a single two NPN transistors. The base of the Q2 NPN transistor is internally connected to the collector of the Q1 NPN transistor. This device is designed to replace a discrete solution that is common for providing a constant current by integrating these two components into a single device. NSM4002MR6 is housed in a SC−74 package which is ideal for surface mount applications in space constrained applications. www.onsemi.com Dual NPN Transistors for Driving LEDs Features • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications 6 5 4 6, 5 Q2 Q2 Q1 • LED Lighting • Driver Circuits 4 1 Q1 2 1 3 2 3 MAXIMUM RATINGS Q1 (TA = 25°C) Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage VEBO 6.0 Vdc IC 200 mAdc Collector Current − Continuous 4 6 5 1 2 3 SC−74 CASE 318F MAXIMUM RATINGS Q2 (TA = 25°C) Symbol Value Unit Collector −Emitter Voltage VCEO 45 Vdc Collector −Base Voltage VCBO 50 Vdc Emitter −Base Voltage VEBO 5.0 Vdc IC 500 mAdc Rating Collector Current − Continuous Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Symbol Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) Thermal Resistance, Junction−to−Ambient RqJA (Note 1) Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range Max Unit 260 2.08 mW mW/°C 480 °C/W 300 2.4 mW mW/°C RqJA (Note 2) 416 °C/W TJ, Tstg −55 to +150 °C MARKING DIAGRAM 1AM MG G 1AM M G = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† NSM4002MR6T1G SC−74 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1. FR− 4, 100 mm2, 2 oz. Cu. 2. FR− 4, 500 mm2, 2 oz. Cu. © Semiconductor Components Industries, LLC, 2015 May, 2015 − Rev. 1 1 Publication Order Number: NSM4002MR6/D NSM4002MR6 Table 1. ELECTRICAL CHARACTERISTICS Q1 (TA = 25°C, unless otherwise noted) Symbol Min Max Unit Collector−Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 − Vdc Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc ICEX − 50 nAdc IBL − 50 nAdc 40 70 100 60 30 − − 300 − − − − 0.20 0.30 0.65 − 0.85 0.95 fT 300 − MHz Output Capacitance (VCB = 5.0 V, f = 1.0 MHz) Cobo − 4.0 pF Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cobo − 8.0 pF Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCE = 30 Vdc, VEB(OFF) = 3.0 Vdc) Base Cutoff Current (VCE = 30 Vdc, VEB(OFF) = 3.0 Vdc) ON CHARACTERISTICS hFE DC Current Gain (Note 3) (IC = 100 mA, VCE = 1.0 V) (IC = 1.0 mA, VCE = 1.0 V) (IC = 10 mA, VCE = 1.0 V) (IC = 50 mA, VCE = 1.0 V) (IC = 100 mA, VCE = 1.0 V) Collector−Emitter Saturation Voltage (Note 3) (IC = 10 mA, IB = 1.0 mA) (IC = 50 mA, IB = 5.0 mA) VCE(sat) Base−Emitter Saturation Voltage (Note 3) (IC = 10 mA, IB = 1.0 mA) (IC = 50 mA, IB = 5.0 mA) VBE(sat) Cutoff Frequency (IC = 10 mA, VCE = 20 V, f = 100 MHz) V V Table 2. ELECTRICAL CHARACTERISTICS Q2 (TA = 25°C, unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 45 − − Vdc Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 50 − − Vdc Emitter−Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) V(BR)EBO 5.0 − − Vdc ICBO − − 0.1 mAdc 250 40 − − 600 − − − 0.7 − − 1.2 OFF CHARACTERISTICS Collector Cutoff Current (VCB = 20 Vdc, IE = 0) ON CHARACTERISTICS hFE DC Current Gain (Note 3) (IC = 100 mA, VCE = 1.0 V) (IC = 500 mA, VCE = 1.0 V) Collector *Emitter Saturation Voltage (Note 3) (IC = 500 mA, IB = 50 mA) VCE(sat) Base*Emitter Turn−on Voltage (Note 3) (IC = 500 mA, VCE = 1.0 V) VBE(on) Cutoff Frequency (IC = 10 mA, VCE = 5.0 V, f = 100 MHz Output Capacitance (VCB = 10 V, f = 1.0 MHz V V fT 100 − − MHz Cobo − 10 − pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%. www.onsemi.com 2 NSM4002MR6 Application Section Introduction based on the biasing current. To determine the Rset value simply divide the VBE voltage by the desired driving current. The NSM4002MR6 is designed to be used as a constant current driver for LEDs. The two resistors in Figure 1 are external from the NSM4002MR6 to allow for customization. Rset controls the current through the load, and R1 controls the bias current. Selecting R1 The R1 resistor is used to set the biasing current. The biasing current is split between the base of Q2 and the collector of Q1. When desiring the lowest overhead voltage R1 should be set as high as possible. It is important to ensure it is not set too high so that Q2 falls out of saturation. However, a lower R1 value will drive more current through Q1. This will reduce the change in the driving current as temperature is increased. It will also allow a higher driving current to be achieved while maintaining good current regulation. The side affect of a lower R1 value is that it reduces the overall efficiency because more power is being used in the driving circuit. Input Votlage, Vs The maximum input voltage, Vs, is determined by the load. No more than 45 V can be applied across Q2. This leads to: V s(max) + V Load ) 45 V (eq. 1) Figure 1. Typical Application Schematic Overhead Voltage Selecting Rset The overhead voltage of this device to reach full current regulation is the combination of the VBE voltages of the two transistors. Under typical conditions this overhead voltage will typically be 1.4 V. The Rset resistor is used to set the driving current of the load. It is connected across the Base−Emitter junction of Q1. This VBE voltage is what sets up the constant voltage across the Rset resistor. Figure 5 gives the typical values of VBE www.onsemi.com 3 NSM4002MR6 TYPICAL CHARACTERISTICS − Q1 1000 h FE, DC CURRENT GAIN TJ = +150°C VCE = 1.0 V +25°C 100 -55°C 10 1 0.1 1.0 100 10 1000 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 2. DC Current Gain 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) Figure 3. Collector Saturation Region www.onsemi.com 4 2.0 3.0 5.0 7.0 10 NSM4002MR6 TYPICAL CHARACTERISTICS − Q1 0.7 1.4 IC/IB = 10 IC/IB = 10 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.8 150°C 0.6 25°C 0.5 −55°C 0.4 0.3 0.2 0.1 0.01 0.1 −55°C 0.8 25°C 0.6 150°C 0.4 0.0001 1 0.001 0.01 1 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 4. Collector Emitter Saturation Voltage vs. Collector Current Figure 5. Base Emitter Saturation Voltage vs. Collector Current 1.4 1.0 VCE = 1 V +25°C TO +125°C 0.5 COEFFICIENT (mV/ °C) VBE(on), BASE−EMITTER VOLTAGE (V) 0.001 1.0 0.8 1.0 0.2 0 1.2 1.2 −55°C 25°C 0.6 qVC FOR VCE(sat) 0 -55°C TO +25°C -0.5 -55°C TO +25°C -1.0 +25°C TO +125°C 0.4 150°C 0.2 0.0001 qVB FOR VBE(sat) -1.5 0.001 0.01 0.1 -2.0 1 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA) Figure 6. Base Emitter Voltage vs. Collector Current Figure 7. Temperature Coefficients www.onsemi.com 5 180 200 NSM4002MR6 TYPICAL CHARACTERISTICS − Q2 300 1 hFE, DC CURRENT GAIN 200 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 1 V 150°C 25°C −55°C 100 150°C 25°C −55°C 0.1 0.01 0 0.001 0.01 0.001 1 0.1 0.1 1 IC, COLLECTOR CURRENT (A) Figure 8. DC Current Gain vs. Collector Current Figure 9. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) 1.0 0.01 IC, COLLECTOR CURRENT (A) 1.1 −55°C IC/IB = 10 0.9 25°C 0.8 150°C 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1.2 VCE = 5 V 1.1 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 1 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 10. Base Emitter Saturation Voltage vs. Collector Current Figure 11. Base Emitter Voltage vs. Collector Current VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) IC/IB = 10 1.0 TJ = 25°C 0.8 0.6 0.4 IC = 10 mA 100 mA 300 mA 500 mA 0.2 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 Figure 12. Saturation Region www.onsemi.com 6 100 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−74 CASE 318F ISSUE P 6 1 SCALE 2:1 DATE 07 OCT 2021 GENERIC MARKING DIAGRAM* XXX MG G XXX M G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. ANODE 6. CATHODE STYLE 2: PIN 1. NO CONNECTION 2. COLLECTOR 3. EMITTER 4. NO CONNECTION 5. COLLECTOR 6. BASE STYLE 3: PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4. EMITTER 2 5. BASE 2 6. COLLECTOR 1 STYLE 4: PIN 1. COLLECTOR 2 2. EMITTER 1/EMITTER 2 3. COLLECTOR 1 4. EMITTER 3 5. BASE 1/BASE 2/COLLECTOR 3 6. BASE 3 STYLE 5: PIN 1. CHANNEL 1 2. ANODE 3. CHANNEL 2 4. CHANNEL 3 5. CATHODE 6. CHANNEL 4 STYLE 7: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 STYLE 8: PIN 1. EMITTER 1 2. BASE 2 3. COLLECTOR 2 4. EMITTER 2 5. BASE 1 6. COLLECTOR 1 STYLE 9: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 STYLE 10: PIN 1. ANODE/CATHODE 2. BASE 3. EMITTER 4. COLLECTOR 5. ANODE 6. CATHODE STYLE 11: PIN 1. EMITTER 2. BASE 3. ANODE/CATHODE 4. ANODE 5. CATHODE 6. COLLECTOR DOCUMENT NUMBER: DESCRIPTION: 98ASB42973B SC−74 STYLE 6: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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