NSM80101MT1G

NSM80101MT1G NPN Transistor with Dual Series Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications http://onsemi.com • LCD Control Board • High Speed Switching • High Voltage Switching NPN Transistor with Dual Series Switching Diode MAXIMUM RATINGS − PNP TRANSISTOR Symbol Value Unit Collector −Emitter Voltage Rating VCEO 80 Vdc Collector −Base Voltage VCBO 80 Vdc Emitter −Base Voltage VEBO 6.0 Vdc IC 500 mAdc Collector Current − Continuous 6 Rating D1 1 Symbol Value Unit VR 100 V Forward Current IF 200 mA Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t < 1 sec t = 1 msec IFSM A 4 6 5 1 2 1.0 20 Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 3 HBM MM Class Value 3A M4 4000 V ≤ Failure < 8000 V Failure > 400 V THERMAL CHARACTERISTICS Rating Total Device Dissipation FR−5 Board, (Note 1) @ TA = 25°C Derate above 25°C Thermal Resistance from Junction−to−Ambient (Note 1) Total Device Dissipation FR−5 Board (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Junction and Storage Temperature Range Symbol PD RqJA PD 2 3 SC−74 CASE 318F MARKING DIAGRAM 3NP MG G ESD RATINGS Electrostatic Discharge D2 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Rating 4 Q1 MAXIMUM RATINGS − SWITCHING DIODE Reverse Voltage 5 Max Unit 400 mW mW/°C 313 °C/W 270 mW mW/°C RqJA 463 °C/W TJ, Tstg −55 to +150 °C 3NP M G = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† NSM80101MT1G SC−74 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1. FR−5 = 650 mm2 pad, 2.0 oz Cu. 2. FR−5 = 10 mm2 pad, 2.0 oz Cu. © Semiconductor Components Industries, LLC, 2013 December, 2013 − Rev. 3 1 Publication Order Number: NSM80101M/D NSM80101MT1G Q1: NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit 80 − 6.0 − − 0.1 − 0.1 120 − − 0.3 − 1.2 150 − Symbol Min Max Unit V(BR) 75 − V − − − 1.0 30 100 − 2.0 − − − − 715 855 1000 1250 − 6.0 − 1.75 OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = 1.0 mA, IB = 0) Emitter −Base Breakdown Voltage (IE = 100 mA, IC = 0) Collector Cutoff Current (VCE = 60 V, IB = 0) Collector Cutoff Current (VCB = 80 V, IE = 0) V(BR)CEO V(BR)EBO ICES ICBO V V mA mA ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 10 mA, VCE = 1.0 V) Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 10 mA) Base −Emitter Saturation Voltage (IC = 10 mA, VCE = 5.0 Vdc) hFE VCE(sat) VBE(sat) − V V SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) fT MHz 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. D1, D2: SWITCHING DIODE (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Reverse Breakdown Voltage Reverse Voltage Leakage Current Diode Capacitance (VR = 75 V) (VR = 20 V, TJ = 150°C) (VR = 75 V, TJ = 150°C) (VR = 0 V, f = 1.0 MHz) Forward Voltage Reverse Recovery Time Forward Recovery Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) (IF = IR = 10 mA, iR(REC) = 1.0 mA, RL = 100 W) (IF = 10 mA, tr = 20 ns) IR CD VF trr VFR mA pF mV ns V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. http://onsemi.com 2 NSM80101MT1G 300 80 40 C, CAPACITANCE (pF) 200 100 70 Cibo 20 10 8.0 50 Cobo 6.0 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 4.0 0.1 200 1.0 2.0 5.0 20 10 Figure 1. Current−Gain — Bandwidth Product Figure 2. Capacitance 50 100 400 TJ = 125°C VCE = 1.0 V ts 200 100 70 50 tf VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 30 20 tr 200 25°C -55°C 100 5.0 7.0 10 20 30 50 70 100 200 300 60 40 0.5 500 1.0 2.0 3.0 5.0 10 20 30 50 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. Switching Time Figure 4. DC Current Gain 200 300 500 1.1 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) IC/IB = 10 150°C 25°C 0.1 0.01 80 td @ VBE(off) = 0.5 V 1 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.5 VR, REVERSE VOLTAGE (VOLTS) 300 10 0.2 IC, COLLECTOR CURRENT (mA) 1.0 k 700 500 t, TIME (ns) TJ = 25°C 60 VCE = 2.0 V TJ = 25°C h FE , DC CURRENT GAIN f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) TYPICAL CHARACTERISTICS 0.001 0.01 −55°C 0.1 0.9 0.8 −55°C 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.2 1 IC/IB = 10 1.0 0.0001 IC, COLLECTOR CURRENT (A) 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 5. Collector Emitter Saturation Voltage vs. Collector Current Figure 6. Base Emitter Saturation Voltage vs. Collector Current http://onsemi.com 3 1 NSM80101MT1G TYPICAL CHARACTERISTICS VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VBE(on), BASE−EMITTER VOLTAGE (V) 1.2 VCE = 1 V 1.1 1.0 0.9 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1 TJ = 25°C 0.8 IC = 250 mA IC = 100 mA IC = 50 mA IC = 500 mA 0.6 0.4 IC = 10 mA 0.2 0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA) Figure 7. Base Emitter Voltage vs. Collector Current Figure 8. Collector Saturation Region 50 1 IC, COLLECTOR CURRENT (A) R qVB , TEMPERATURE COEFFICIENT (mV/ °C) -0.8 -1.2 -1.6 RqVB for VBE -2.0 -2.4 1S 2.0 5.0 10 20 50 100 200 500 10 mS 0.1 Thermal Limit 0.01 0.1 1 Figure 10. Safe Operating Area Figure 9. Base−Emitter Temperature Coefficient 400 300 200 100 0 20 10 VCE, COLLECTOR EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mA) 0 1 mS 100 mS 0.001 1.0 PD, POWER DISSIPATION (mW) -2.8 0.5 1.0 40 60 80 100 120 140 TEMPERATURE (°C) Figure 11. Operating Temperature Derating http://onsemi.com 4 160 100 NSM80101MT1G TYPICAL CHARACTERISTICS 100 100 IR, REVERSE CURRENT (mA) IF, FORWARD CURRENT (mA) 1000 TA = 150°C TA = 125°C TA = 85°C 10 TA = 55°C TA = 25°C 1 TA = −40°C 0.1 TA = −55°C 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 TA = 85°C TA = 55°C 0.1 0.01 0.001 TA = 25°C 0 10 20 30 40 50 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 12. Forward Voltage Figure 13. Leakage Current 60 70 150 175 100 0.59 VR, DC REVERSE VOLTAGE (V) Cd, DIODE CAPACITANCE (pF) TA = 125°C 1.0 0.61 0.57 0.55 0.53 0.51 0.49 0.47 0.45 TA = 150°C 10 0 1 2 3 4 5 6 7 75 50 25 0 8 0 25 50 75 100 125 VR, REVERSE VOLTAGE (V) TA, DERATED AMBIENT TEMPERATURE (°C) Figure 14. Capacitance Figure 15. Diode Power Dissipation Curve http://onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−74 CASE 318F ISSUE P 6 1 SCALE 2:1 DATE 07 OCT 2021 GENERIC MARKING DIAGRAM* XXX MG G XXX M G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. ANODE 6. CATHODE STYLE 2: PIN 1. NO CONNECTION 2. COLLECTOR 3. EMITTER 4. NO CONNECTION 5. COLLECTOR 6. BASE STYLE 3: PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4. EMITTER 2 5. BASE 2 6. COLLECTOR 1 STYLE 4: PIN 1. COLLECTOR 2 2. EMITTER 1/EMITTER 2 3. COLLECTOR 1 4. EMITTER 3 5. BASE 1/BASE 2/COLLECTOR 3 6. BASE 3 STYLE 5: PIN 1. CHANNEL 1 2. ANODE 3. CHANNEL 2 4. CHANNEL 3 5. CATHODE 6. CHANNEL 4 STYLE 7: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 STYLE 8: PIN 1. EMITTER 1 2. BASE 2 3. COLLECTOR 2 4. EMITTER 2 5. BASE 1 6. COLLECTOR 1 STYLE 9: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 STYLE 10: PIN 1. ANODE/CATHODE 2. BASE 3. EMITTER 4. COLLECTOR 5. ANODE 6. CATHODE STYLE 11: PIN 1. EMITTER 2. BASE 3. ANODE/CATHODE 4. ANODE 5. CATHODE 6. COLLECTOR DOCUMENT NUMBER: DESCRIPTION: 98ASB42973B SC−74 STYLE 6: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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