NSV12100XV6T1G

NSS12100XV6T1G Low VCE(sat) Transistor, PNP, 12 V, 1.0 A, SOT-563 Package ON Semiconductor’s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. http://onsemi.com 12 VOLTS, 1.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 300 mW COLLECTOR 1, 2, 5, 6 3 BASE 4 EMITTER Features • • • • • High Current Capability (1 A) High Power Handling (Up to 650 mW) Low VCE(s) (150 mV Typical @ 500 mA) Small Size This is a Pb−Free Device 1 SOT−563 CASE 463A STYLE 4 Benefits • High Specific Current and Power Capability Reduces Required PCB Area • Reduced Parasitic Losses Increases Battery Life DEVICE MARKING MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO −12 Vdc Collector-Base Voltage VCBO −12 Vdc Emitter-Base Voltage VEBO −5.0 Vdc Collector Current − Continuous Collector Current − Peak IC ICM −1.0 −2.0 Adc Electrostatic Discharge ESD HBM Class 3 MM Class C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1 VE M G G VE = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NSS12100XV6T1G Package Shipping † SOT−563 4000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 November, 2006 − Rev. 0 1 Publication Order Number: NSS12100XV6/D NSS12100XV6T1G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) 500 mW 4.0 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 250 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) 650 mW 5.2 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 192 °C/W RqJL 105 °C/W PD Single 1.0 W TJ, Tstg −55 to +150 °C Thermal Resistance, Junction−to−Lead 6 Total Device Dissipation (Single Pulse < 10 sec.) Junction and Storage Temperature Range ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage, (IC = −10 mAdc, IB = 0) V(BR)CEO −12 − − Vdc Collector −Base Breakdown Voltage, (IC = −0.1 mAdc, IE = 0) V(BR)CBO −12 − − Vdc Emitter −Base Breakdown Voltage, (IE = −0.1 mAdc, IC = 0) V(BR)EBO −5.0 − − Vdc Collector Cutoff Current, (VCB = −12 Vdc, IE = 0) ICBO − −0.02 −0.1 mAdc Emitter Cutoff Current, (VCES = −5.0 Vdc, IE = 0) IEBO − −0.03 −0.1 mAdc 200 100 90 − − − − − − − − − − − −0.030 −0.080 −0.050 −0.200 −0.400 −0.040 −0.100 −0.060 −0.225 −0.440 − 0.95 −1.15 − −1.05 −1.15 OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (Note 3) (IC = −10 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) hFE Collector −Emitter Saturation Voltage (Note 3) (IC = −0.05 A, IB = −0.005 A) (Note 4) (IC = −0.1 A, IB = −0.002 A) (IC = −0.1 A, IB = −0.010 A) (IC = −0.5 A, IB = −0.050 A) (IC = −1.0 A, IB = −0.100 A) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (IC = −1.0 A, IB = −0.01 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 3) (IC = −2.0 A, VCE = −3.0 V) VBE(on) V V V Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Cibo − 50 pF Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) Cobo − 20 pF 1. 2. 3. 4. mm2, mm2, FR−4 @ 100 1 oz copper traces. FR−4 @ 500 1 oz copper traces. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. Guaranteed by design but not tested. http://onsemi.com 2 NSS12100XV6T1G 0.9 3.0 IC/IB = 10 VCE(sat) = 150°C VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 1.0 25°C 0.8 0.7 −55°C 0.6 0.5 0.4 0.3 0.2 0.1 0 200 150°C 1.5 1.0 0.5 150°C (2.0 V) 25°C (5.0 V) 25°C (2.0 V) −55°C (5.0 V) IC/IB = 10 1.2 1.0 TA = −55°C 0.8 0.6 25°C 0.4 150°C 0.2 0 0.001 0.01 0.1 1 10 0.001 IC, COLLECTOR CURRENT (A) VCE, COLLECTOR−EMITTER VOLTAGE (V) VBE(on), BASE EMITTER TURN−ON VOLTAGE (V) 0.6 VCE = −1.0 V TA = −55°C 25°C 0.4 0.2 150°C 0 0.001 0.01 0.1 0.1 10 1 Figure 4. Base Emitter Saturation Voltage vs. Collector Current 1.0 0.8 0.01 IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain vs. Collector Current 1.2 10 1.4 100 1.4 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 150°C (5.0 V) −55°C (2.0 V) 0 2.0 0.001 VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 300 2.5 10 0.01 0.1 1 IC, COLLECTOR CURRENT (A) 600 400 25°C 0 0.001 Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 500 VCE(sat) = −55°C IC/IB = 100 1 10 1.0 10 mA 100 mA 300 mA IC = 500 mA 0.8 0.6 0.4 0.2 0 0.01 IC, COLLECTOR CURRENT (A) 0.1 1 10 IB, BASE CURRENT (mA) Figure 5. Base Emitter Turn−On Voltage vs. Collector Current Figure 6. Saturation Region http://onsemi.com 3 100 NSS12100XV6T1G 30 Cobo, OUTPUT CAPACITANCE (pF) Cibo, INPUT CAPACITANCE (pF) 50 45 40 Cibo(pF) 35 30 25 20 0 1 3 4 2 VEB, EMITTER BASE VOLTAGE (V) 5 25 Cobo(pF) 20 15 10 5 0 0 Figure 7. Input Capacitance 1 2 3 4 5 6 7 8 9 VCB, COLLECTOR BASE VOLTAGE (V) Figure 8. Output Capacitance http://onsemi.com 4 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A ISSUE H 6 1 SCALE 4:1 DOCUMENT NUMBER: DESCRIPTION: 98AON11126D SOT−563, 6 LEAD DATE 26 JAN 2021 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOT−563, 6 LEAD CASE 463A ISSUE H DATE 26 JAN 2021 GENERIC MARKING DIAGRAM* XX MG 1 XX = Specific Device Code M = Month Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON11126D SOT−563, 6 LEAD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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