NSV20201LT1G

NSS20201LT1G, NSV20201LT1G 20 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. www.onsemi.com 20 VOLTS 4.0 AMPS NPN LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 37 mW SOT−23 (TO−236) CASE 318 STYLE 6 COLLECTOR 3 Features • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER MARKING DIAGRAM VD M G G 1 VD = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† NSS20201LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) NSV20201LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 October, 2016 − Rev. 7 1 Publication Order Number: NSS20201L/D NSS20201LT1G, NSV20201LT1G MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector-Emitter Voltage VCEO 20 Vdc Collector-Base Voltage VCBO 20 Vdc Emitter-Base Voltage VEBO 6.0 Vdc IC 2.0 A Collector Current − Peak ICM 4.0 A Electrostatic Discharge ESD Rating Collector Current − Continuous HBM Class 3B MM Class C THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) Thermal Resistance, Junction−to−Ambient RqJA (Note 1) Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) Thermal Resistance, Junction−to−Ambient RqJA (Note 2) Junction and Storage Temperature Range TJ, Tstg Max Unit 460 3.7 mW mW/°C 270 540 4.3 230 −55 to +150 °C/W mW mW/°C °C/W °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 4 @ 100 mm2, 1 oz. copper traces. 2. FR− 4 @ 500 mm2, 1 oz. copper traces. www.onsemi.com 2 NSS20201LT1G, NSV20201LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 20 − − 20 − − 6.0 − − − − 0.1 − − 0.1 200 200 200 200 − 360 − − − − − − − − − − 0.004 0.037 0.060 0.072 0.010 0.050 0.090 0.100 − 0.760 0.900 − 0.760 0.900 150 − − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 20 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 6.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS hFE DC Current Gain (Note 3) (IC = 10 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) Collector −Emitter Saturation Voltage (Note 3) (IC = 0.1 A, IB = 0.010 A) (IC = 1.0 A, IB = 0.100 A) (IC = 1.0 A, IB = 0.010 A) (IC = 2.0 A, IB = 0.200 A) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (IC = 1.0 A, IB = 10 mA) VBE(sat) Base −Emitter Turn−on Voltage (Note 3) (IC = 1.0 A, VCE = 2.0 V) VBE(on) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz) fT V V V MHz Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo − − 450 pF Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo − − 45 pF Delay (VCC = 15 V, IC = 750 mA, IB1 = 15 mA) td − − 100 ns Rise (VCC = 15 V, IC = 750 mA, IB1 = 15 mA) tr − − 100 ns Storage (VCC = 15 V, IC = 750 mA, IB1 = 15 mA) ts − − 500 ns Fall (VCC = 15 V, IC = 750 mA, IB1 = 15 mA) tf − − 110 ns SWITCHING CHARACTERISTICS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. www.onsemi.com 3 NSS20201LT1G, NSV20201LT1G TYPICAL CHARACTERISTICS 0.25 IC/IB = 10 150°C 0.15 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.2 25°C 0.2 −55°C 0.15 0.1 −55°C 0.05 0 25°C 0.1 0.05 0.001 0.01 0.1 1 0 10 0.001 IC, COLLECTOR CURRENT (A) 1.1 150°C (5.0 V) VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) 500 450 25°C (5.0 V) 350 25°C (2.0 V) 300 250 −55°C (5.0 V) 200 150 −55°C (2.0 V) 0.001 0.01 0.1 1 0.9 −55°C 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain vs. Collector Current Figure 4. Base Emitter Saturation Voltage vs. Collector Current VCE = 2.0 V −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.3 0.2 0.1 10 IC, COLLECTOR CURRENT (A) 1.0 0.9 1 IC/IB = 10 1.0 0.3 10 0.001 0.01 0.1 1 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN 150°C (2.0 V) 500 0.1 Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 600 550 0.01 IC, COLLECTOR CURRENT (A) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE EMITTER TURN−ON VOLTAGE (V) 150°C IC/IB = 100 1.0 300 mA 10 mA IC = 500 mA 0.8 100 mA 0.6 0.4 0.2 0 0.01 IC, COLLECTOR CURRENT (A) 0.1 1 10 IB, BASE CURRENT (mA) Figure 5. Base Emitter Turn−On Voltage vs. Collector Current Figure 6. Saturation Region www.onsemi.com 4 100 NSS20201LT1G, NSV20201LT1G TYPICAL CHARACTERISTICS Cobo, OUTPUT CAPACITANCE (pF) 80 Cibo(pF) 375 350 325 300 275 250 225 200 175 0 1 2 3 4 5 60 50 40 30 20 6 Cobo(pF) 70 0 2 4 6 8 10 12 VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V) Figure 7. Input Capacitance Figure 8. Output Capacitance 10 IC, COLLECTOR CURRENT (A) Cibo, INPUT CAPACITANCE (pF) 425 400 100 ms 10 ms 1s 1 ms 1 Thermal Limit 0.1 0.01 Single Pulse Test at Tamb = 25°C 0.01 0.1 1 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 9. Safe Operating Area www.onsemi.com 5 100 14 16 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. 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