DATA SHEET
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Dual General Purpose
Transistors
SOT−363/SC−88
CASE 419B
STYLE 1
NPN Duals
BC846BDW1, BC847BDW1,
BC848CDW1
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
(3)
(2)
Q1
Q2
(4)
Features
(1)
(5)
(6)
• S and NSV Prefixes for Automotive and Other Applications
•
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MARKING DIAGRAM
6
1x MG
G
MAXIMUM RATINGS
Rating
1
Symbol
BC846
BC847
BC848
Unit
Collector −Emitter Voltage
VCEO
65
45
30
V
Collector −Base Voltage
VCBO
80
50
30
V
Emitter −Base Voltage
VEBO
6.0
6.0
5.0
V
IC
100
100
100
mAdc
Collector Current −
Continuous
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1x
x
M
G
= Specific Device Code
= B, F, G, L
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Per Device
FR− 5 Board (Note 1)
TA = 25°C
Derate Above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature
Range
Symbol
Max
Unit
PD
380
250
mW
mW
3.0
mW/°C
RqJA
TJ, Tstg
°C/W
328
−55 to +150
°C
1. FR−5 = 1.0 x 0.75 x 0.062 in
*For additional information on our Pb−Free strategy and soldering details, please
download the onsemi Soldering and Mounting Techniques Reference Manual,
SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2015
June, 2022 − Rev. 13
1
Publication Order Number:
BC846BDW1T1/D
BC846BDW1, BC847BDW1, BC848CDW1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
BC846
BC847
BC848
V(BR)CEO
Collector −Emitter Breakdown Voltage
(IC = 10 mA, VEB = 0)
BC846
BC847
BC848
V(BR)CES
Collector −Base Breakdown Voltage
(IC = 10 mA)
BC846
BC847
BC848
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
BC846
BC847
BC848
V(BR)EBO
V
65
45
30
−
−
−
−
−
−
V
80
50
30
ICBO
−
−
−
V
80
50
30
Collector Cutoff Current
(VCB = 30 V)
(VCB = 30 V, TA = 150°C)
−
−
−
−
−
−
−
−
−
V
6.0
6.0
5.0
−
−
−
−
−
−
−
−
−
−
15
5.0
nA
mA
ON CHARACTERISTICS
hFE
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BC846B, BC847B
BC847C, BC848C
(IC = 2.0 mA, VCE = 5.0 V)
BC846B, BC847B
BC847C, BC848C
Collector −Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
VBE(sat)
Base −Emitter Voltage
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
VBE(on)
−
−
−
150
270
−
−
200
420
290
520
450
800
−
−
−
−
0.25
0.6
−
−
0.7
0.9
−
−
580
−
660
−
700
770
100
−
−
−
−
4.5
−
−
10
V
V
mV
SMALL− SIGNAL CHARACTERISTICS
fT
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Cobo
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW,f = 1.0 kHz, BW = 200 Hz)
NF
MHz
pF
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
BC846BDW1, BC847BDW1, BC848CDW1
TYPICAL CHARACTERISTICS − BC846BDW1
600
600
VCE = 10 V
150°C
400
25°C
300
200
−55°C
100
0
0.001
VCE(sat), COLL−EMITT SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
500
0.25
0.01
0.1
500
150°C
400
25°C
300
200
−55°C
100
0
0.001
1
Figure 1. DC Current Gain at VCE = 5 V
Figure 2. DC Current Gain at VCE = 10 V
IC/IB = 10
0.15
150°C
0.10
25°C
0.05
−55°C
0.00
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
0.25
IC/IB = 20
0.2
0.15
25°C
0.1
0.05
0.80
25°C
0.70
0.60
150°C
0.50
0.40
0.30
0.20
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
VBE(sat), BASE−EMITT SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITT SATURATION VOLTAGE (V)
−55°C
150°C
−55°C
0
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 4. VCE(sat) at IC/IB = 20
IC/IB = 10
0.90
1
0.3
Figure 3. VCE(sat) at IC/IB = 10
1.00
0.1
IC, COLLECTOR CURRENT (A)
0.20
1.10
0.01
IC, COLLECTOR CURRENT (A)
VCE(sat), COLL−EMITT SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
VCE = 5 V
1.10
1.00
IC/IB = 20
0.90
0.80
0.70
−55°C
25°C
0.60
0.50
0.40
150°C
0.30
0.20
0.0001
Figure 5. VBE(sat) at IC/IB = 10
0.001
0.01
IC, COLLECTOR CURRENT (A)
Figure 6. VBE(sat) at IC/IB = 20
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3
0.1
BC846BDW1, BC847BDW1, BC848CDW1
TYPICAL CHARACTERISTICS − BC846BDW1
1000
VCE = 5 V
1.10
fT, CURRENT−GAIN − BANDWIDTH
PRODUCT
VBE(on), BASE−EMITTER VOLTAGE
(V)
1.20
1.00
0.90
−55°C
0.80
25°C
0.70
0.60
150°C
0.50
0.40
0.30
0.20
0.0001
0.001
0.01
0.1
1
10
100
Figure 7. VBE(on) at VCE = 5 V
Figure 8. Current − Gain − Bandwidth Product
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Cib
C, CAPACITANCE (pF)
10
0.1
IC, COLLECTOR CURRENT (mA)
TA = 25°C
Cob
1
10
100
2
1.6
TA = 25°C
IC =
10 mA
IC =
20 mA
IC =
50 mA
IC =
100 mA
1.2
0.8
0.4
0
0.01
0.1
1
10
VR, REVERSE VOLTAGE (V)
IB, BASE CURRENT (mA)
Figure 9. Capacitances
Figure 10. Collector Saturation Region
qVB, TEMPERATURE COEFFICIENT
(mV/°C)
0.1
100
IC, COLLECTOR CURRENT (A)
10
1
VCE = 10 V
TA = 25°C
−0.2
VCE = 5 V
−0.6
−1
−1.4
qVB, for VBE
−1.8
−55°C to 150°C
−2.2
−2.6
−3
0.1
1
10
IB, BASE CURRENT (mA)
100
Figure 11. Base−Emitter Temperature Coefficient
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4
100
BC846BDW1, BC847BDW1, BC848CDW1
TYPICAL CHARACTERISTICS − BC847BDW1
400
25°C
300
−55°C
200
100
0.25
0.001
0.01
0.1
25°C
150°C
0.05
−55°C
0.001
0.01
IC, COLLECTOR CURRENT (A)
0.1
Figure 14. VCE at IC/IB = 10
IC/IB = 10
1.00
−55°C
25°C
0.60
150°C
0.20
0.00
0.0001
−55°C
200
100
0.001
0.01
0.1
Figure 13. DC Current Gain at VCE = 10 V
0.10
0.40
25°C
300
Figure 12. DC Current Gain at VCE = 5 V
0.15
0.80
400
IC, COLLECTOR CURRENT (A)
0.20
1.20
150°C
500
IC, COLLECTOR CURRENT (A)
IC/IB = 10
0.00
0.0001
VCE = 10 V
0
0.0001
1
0.001
0.01
IC, COLLECTOR CURRENT (A)
0.1
VCE(sat), COLL−EMITT SATURATION VOLTAGE (V)
VCE(sat), COLL−EMITT SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
150°C
500
0
0.0001
VBE(sat), BASE−EMITT SATURATION VOLTAGE (V)
600
VCE = 5 V
VBE(sat), BASE−EMITT SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
600
0.30
IC/IB = 20
0.25
0.20
0.15
25°C
0.10
0.05
150°C
−55°C
0.00
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
0.1
Figure 15. VCE at IC/IB = 20
1.20
IC/IB = 20
1.00
0.80
0.60
0.40
−55°C
25°C
150°C
0.20
0.00
0.0001
Figure 16. VBE(sat) at IC/IB = 10
0.001
0.01
IC, COLLECTOR CURRENT (A)
Figure 17. VBE(sat) at IC/IB = 20
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1
0.1
BC846BDW1, BC847BDW1, BC848CDW1
TYPICAL CHARACTERISTICS − BC847BDW1
1.10
1000
VCE = 5 V
1.00
0.90
−55°C
0.80
0.70
100
25°C
0.60
0.50
150°C
0.40
0.30
0.20
0.0001
VCE = 10 V
TA = 25°C
fT, CURRENT−GAIN − BANDWIDTH
PRODUCT
VBE(on), BASE−EMITTER VOLTAGE
(V)
1.20
0.001
0.01
IC, COLLECTOR CURRENT (A)
0.1
10
0.1
2
VCE, COLLECTOR−EMITTER VOLTAGE (V)
TA = 25°C
C, CAPACITANCE (pF)
Cob
1
100
Figure 19. Current − Gain − Bandwidth
Product
Cib
10
100
1.6
TA = 25°C
IC =
10 mA
1.2
IC =
20 mA
IC =
50 mA
IC =
100 mA
0.8
0.4
0
0.01
0.1
1
10
VR, REVERSE VOLTAGE (V)
IB, BASE CURRENT (mA)
Figure 20. Capacitances
Figure 21. Collector Saturation Region
qVB, TEMPERATURE COEFFICIENT
(mV/°C)
1
0.1
10
IC, COLLECTOR CURRENT (mA)
Figure 18. VBE(on) at VCE = 5 V
10
1
VCE = 5 V
−0.2
−0.6
−1
−1.4
qVB, for VBE
−55°C to 150°C
−1.8
−2.2
−2.6
−3
0.1
1
10
100
IB, BASE CURRENT (mA)
Figure 22. Base−Emitter Temperature Coefficient
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6
100
BC846BDW1, BC847BDW1, BC848CDW1
TYPICAL CHARACTERISTICS − BC848CDW1
1000
800
700
600
25°C
500
400
−55°C
300
200
100
0.001
0.01
0.1
800
700
25°C
600
500
400
−55°C
300
200
0
0.0001
1
0.001
Figure 23. DC Current Gain at VCE = 5 V
Figure 24. DC Current Gain at VCE = 10 V
IC/IB = 10
0.14
0.12
0.10
150°C
0.08
25°C
0.06
0.04
−55°C
0.02
0.00
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
0.30
0.25
0.20
0.15
25°C
0.10
0.05
VBE(sat), BASE−EMITT SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITT SATURATION VOLTAGE (V)
0.9
0.7
−55°C
25°C
0.6
0.5
0.4
150°C
0.3
0.2
0.0001
0.001
0.01
150°C
−55°C
0.00
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 26. VCE at IC/IB = 20
IC/IB = 10
0.8
1
IC/IB = 20
Figure 25. VCE at IC/IB = 10
1.0
0.1
IC, COLLECTOR CURRENT (A)
0.16
1.1
0.01
IC, COLLECTOR CURRENT (A)
VCE(sat), COLL−EMITT SATURATION VOLTAGE (V)
VCE(sat), COLL−EMITT SATURATION VOLTAGE (V)
0.18
VCE = 10 V
100
0
0.0001
0.20
150°C
900
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
1000
VCE = 5 V
150°C
900
0.1
IC, COLLECTOR CURRENT (A)
1.2
IC/IB = 20
1.0
0.8
−55°C
25°C
0.6
0.4
150°C
0.2
0.0
0.0001
Figure 27. VBE(sat) at IC/IB = 10
0.001
0.01
IC, COLLECTOR CURRENT (A)
Figure 28. VBE(sat) at IC/IB = 20
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0.1
BC846BDW1, BC847BDW1, BC848CDW1
TYPICAL CHARACTERISTICS − BC848CDW1
1000
fT, CURRENT−GAIN − BANDWIDTH
PRODUCT
VCE = 5 V
0.9
−55°C
0.8
25°C
0.7
0.6
0.5
0.4
150°C
0.3
0.2
0.1
0.0
0.0001
0.001
0.01
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Cib
C, CAPACITANCE (pF)
10
0.1
Figure 30. Current − Gain − Bandwidth
Product
TA = 25°C
Cob
1
10
2
100
IC =
1.6 10 mA
TA = 25°C
IC =
20 mA
1.2
IC =
50 mA
IC =
100 mA
0.8
0.4
0
0.01
0.1
1
10
VR, REVERSE VOLTAGE (V)
IB, BASE CURRENT (mA)
Figure 31. Capacitances
Figure 32. Collector Saturation Region
qVB, TEMPERATURE COEFFICIENT
(mV/°C)
0.1
100
IC, COLLECTOR CURRENT (A)
10
1
VCE = 10 V
TA = 25°C
Figure 29. VBE(on) at VCE = 5 V
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE
(V)
1.0
VCE = 5 V
−0.2
−0.6
−1
−1.4
−1.8
qVB, for VBE
−55°C to 150°C
−2.2
−2.6
−3
0.1
1
10
IB, BASE CURRENT (mA)
100
Figure 33. Base−Emitter Temperature Coefficient
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100
BC846BDW1, BC847BDW1, BC848CDW1
1.0
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
ZqJA(t) = r(t) RqJA
RqJA = 3285C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
P(pk)
t1
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.001
0
1.0
10
100
t, TIME (ms)
1.0k
10k
100k
1.0M
Figure 34. Thermal Response
The safe operating area curves indicate IC−VCE limits
of the transistor that must be observed for reliable
operation. Collector load lines for specific circuits must
fall below the limits indicated by the applicable curve.
The data of Figure 35 is based upon TJ(pk) = 150°C; TC
or TA is variable depending upon conditions. Pulse
curves are valid for duty cycles to 10% provided TJ(pk) ≤
150°C. T J(pk) may be calculated from the data in
Figure 34. At high case or ambient temperatures,
thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by the
secondary breakdown.
-200
IC, COLLECTOR CURRENT (mA)
1s
3 ms
-100
-50
-10
-5.0
-2.0
-1.0
TA = 25°C
TJ = 25°C
BC848
BC847
BC846
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-5.0
-10
-30 -45 -65 -100
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 35. Active Region Safe Operating Area
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BC846BDW1, BC847BDW1, BC848CDW1
ORDERING INFORMATION
Markings
Package
Shipping†
BC846BDW1T1G
1B
SOT−363
(Pb−Free)
3,000 / Tape & Reel
SBC846BDW1T1G*
1B
SOT−363
(Pb−Free)
3,000 / Tape & Reel
BC847BDW1T1G
1F
SOT−363
(Pb−Free)
3,000 / Tape & Reel
SBC847BDW1T1G*
1F
SOT−363
(Pb−Free)
3,000 / Tape & Reel
BC847BDW1T3G
1F
SOT−363
(Pb−Free)
10,000 / Tape & Reel
SBC847BDW1T3G*
1F
SOT−363
(Pb−Free)
10,000 / Tape & Reel
NSVBC847BDW1T2G*
1F
SOT−363
(Pb−Free)
3,000 / Tape & Reel
BC847CDW1T1G
1G
SOT−363
(Pb−Free)
3,000 / Tape & Reel
SBC847CDW1T1G*
1G
SOT−363
(Pb−Free)
3,000 / Tape & Reel
BC848CDW1T1G
1L
SOT−363
(Pb−Free)
3,000 / Tape & Reel
NSVBC848CDW1T1G*
1L
SOT−363
(Pb−Free)
3,000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified
and PPAP Capable.
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10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
1
SCALE 2:1
DATE 11 DEC 2012
2X
aaa H D
D
H
A
D
6
5
GAGE
PLANE
4
1
2
L
L2
E1
E
DETAIL A
3
aaa C
2X
bbb H D
2X 3 TIPS
e
B
6X
b
ddd
TOP VIEW
C A-B D
M
A2
DETAIL A
A
6X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
ccc C
A1
SIDE VIEW
C
SEATING
PLANE
END VIEW
c
RECOMMENDED
SOLDERING FOOTPRINT*
6X
DIM
A
A1
A2
b
C
D
E
E1
e
L
L2
aaa
bbb
ccc
ddd
MILLIMETERS
MIN
NOM MAX
−−−
−−−
1.10
0.00
−−−
0.10
0.70
0.90
1.00
0.15
0.20
0.25
0.08
0.15
0.22
1.80
2.00
2.20
2.00
2.10
2.20
1.15
1.25
1.35
0.65 BSC
0.26
0.36
0.46
0.15 BSC
0.15
0.30
0.10
0.10
GENERIC
MARKING DIAGRAM*
6
XXXMG
G
6X
0.30
INCHES
NOM MAX
−−− 0.043
−−− 0.004
0.035 0.039
0.008 0.010
0.006 0.009
0.078 0.086
0.082 0.086
0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.006 BSC
0.006
0.012
0.004
0.004
MIN
−−−
0.000
0.027
0.006
0.003
0.070
0.078
0.045
0.66
1
2.50
0.65
PITCH
XXX = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
*Date Code orientation and/or position may
vary depending upon manufacturing location.
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC−88/SC70−6/SOT−363
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
DATE 11 DEC 2012
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
STYLE 2:
CANCELLED
STYLE 3:
CANCELLED
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. COLLECTOR
4. EMITTER
5. BASE
6. ANODE
STYLE 5:
PIN 1. ANODE
2. ANODE
3. COLLECTOR
4. EMITTER
5. BASE
6. CATHODE
STYLE 6:
PIN 1. ANODE 2
2. N/C
3. CATHODE 1
4. ANODE 1
5. N/C
6. CATHODE 2
STYLE 7:
PIN 1. SOURCE 2
2. DRAIN 2
3. GATE 1
4. SOURCE 1
5. DRAIN 1
6. GATE 2
STYLE 8:
CANCELLED
STYLE 9:
PIN 1. EMITTER 2
2. EMITTER 1
3. COLLECTOR 1
4. BASE 1
5. BASE 2
6. COLLECTOR 2
STYLE 10:
PIN 1. SOURCE 2
2. SOURCE 1
3. GATE 1
4. DRAIN 1
5. DRAIN 2
6. GATE 2
STYLE 11:
PIN 1. CATHODE 2
2. CATHODE 2
3. ANODE 1
4. CATHODE 1
5. CATHODE 1
6. ANODE 2
STYLE 12:
PIN 1. ANODE 2
2. ANODE 2
3. CATHODE 1
4. ANODE 1
5. ANODE 1
6. CATHODE 2
STYLE 13:
PIN 1. ANODE
2. N/C
3. COLLECTOR
4. EMITTER
5. BASE
6. CATHODE
STYLE 14:
PIN 1. VREF
2. GND
3. GND
4. IOUT
5. VEN
6. VCC
STYLE 15:
PIN 1. ANODE 1
2. ANODE 2
3. ANODE 3
4. CATHODE 3
5. CATHODE 2
6. CATHODE 1
STYLE 16:
PIN 1. BASE 1
2. EMITTER 2
3. COLLECTOR 2
4. BASE 2
5. EMITTER 1
6. COLLECTOR 1
STYLE 17:
PIN 1. BASE 1
2. EMITTER 1
3. COLLECTOR 2
4. BASE 2
5. EMITTER 2
6. COLLECTOR 1
STYLE 18:
PIN 1. VIN1
2. VCC
3. VOUT2
4. VIN2
5. GND
6. VOUT1
STYLE 19:
PIN 1. I OUT
2. GND
3. GND
4. V CC
5. V EN
6. V REF
STYLE 20:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
STYLE 21:
PIN 1. ANODE 1
2. N/C
3. ANODE 2
4. CATHODE 2
5. N/C
6. CATHODE 1
STYLE 22:
PIN 1. D1 (i)
2. GND
3. D2 (i)
4. D2 (c)
5. VBUS
6. D1 (c)
STYLE 23:
PIN 1. Vn
2. CH1
3. Vp
4. N/C
5. CH2
6. N/C
STYLE 24:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
STYLE 25:
PIN 1. BASE 1
2. CATHODE
3. COLLECTOR 2
4. BASE 2
5. EMITTER
6. COLLECTOR 1
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
STYLE 27:
PIN 1. BASE 2
2. BASE 1
3. COLLECTOR 1
4. EMITTER 1
5. EMITTER 2
6. COLLECTOR 2
STYLE 28:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
STYLE 29:
PIN 1. ANODE
2. ANODE
3. COLLECTOR
4. EMITTER
5. BASE/ANODE
6. CATHODE
STYLE 30:
PIN 1. SOURCE 1
2. DRAIN 2
3. DRAIN 2
4. SOURCE 2
5. GATE 1
6. DRAIN 1
Note: Please refer to datasheet for
style callout. If style type is not called
out in the datasheet refer to the device
datasheet pinout or pin assignment.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC−88/SC70−6/SOT−363
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
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vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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