NSVBCP69T1G

BCP69T1G, NSVBCP69T1G PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. http://onsemi.com Features MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT • High Current: IC = −1.0 A • The SOT−223 Package Can Be Soldered Using Wave or Reflow. • SOT−223 package ensures level mounting, resulting in improved • • • • thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. NPN Complement is BCP68 AEC−Q101 Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value Unit Collector−Emitter Voltage VCEO −20 Vdc Collector−Base Voltage VCBO −25 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current IC −1.0 Adc Total Power Dissipation @ TA = 25°C (Note 1) Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg −65 to 150 °C Symbol Max Unit RqJA 83.3 °C/W TL 260 °C 10 s Rating Operating and Storage Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance − Junction−to−Ambient (Surface Mounted) Lead Temperature for Soldering, 0.0625 in from case Time in Solder Bath Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. © Semiconductor Components Industries, LLC, 2011 November, 2011 − Rev. 11 1 MARKING DIAGRAM 4 1 2 AYW CEG G 3 SOT−223 (TO−261) CASE 318E STYLE 1 CE A Y W G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (*Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† BCP69T1G SOT−223 (Pb−Free) 1000 / Tape & Reel NSVBCP69T1G SOT−223 (Pb−Free) 1000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BCP69T1/D BCP69T1G, NSVBCP69T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector−Emitter Breakdown Voltage (IC = −100 mAdc, IE = 0) V(BR)CES −25 − − Vdc Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V(BR)CEO −20 − − Vdc Emitter−Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO −5.0 − − Vdc Collector−Base Cutoff Current (VCB = − 25 Vdc, IE = 0) ICBO − − −10 mAdc Emitter−Base Cutoff Current (VEB = − 5.0 Vdc, IC = 0) IEBO − − −10 mAdc 50 85 60 − − − − 375 − Characteristics OFF CHARACTERISTICS ON CHARACTERISTICS hFE DC Current Gain (IC = − 5.0 mAdc, VCE = −10 Vdc) (IC = − 500 mAdc, VCE = −1.0 Vdc) (IC = −1.0 Adc, VCE = −1.0 Vdc) − Collector−Emitter Saturation Voltage (IC = −1.0 Adc, IB = −100 mAdc) VCE(sat) − − −0.5 Vdc Base−Emitter On Voltage (IC = −1.0 Adc, VCE = −1.0 Vdc) VBE(on) − − −1.0 Vdc fT − 60 − MHz DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = −10 mAdc, VCE = − 5.0 Vdc) TYPICAL ELECTRICAL CHARACTERISTICS f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz) hFE, DC CURRENT GAIN 400 VCE = 1 V 150°C 300 200 100 0 25°C −55°C 0.001 0.01 0.1 1 10 300 200 100 VCE = -10 V TJ = 25°C f = 30 MHz 70 50 30 -10 IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain -100 IC, COLLECTOR CURRENT (mA) Figure 2. Current Gain Bandwidth Product http://onsemi.com 2 -1000 BCP69T1G, NSVBCP69T1G TYPICAL ELECTRICAL CHARACTERISTICS 1.4 0.30 IC/IB = 10 IC/IB = 10 150°C 0.25 0.20 25°C 0.15 0.10 −55°C 0.05 0 0.001 0.01 0.1 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.35 1.2 1.0 −55°C 0.8 150°C 0.4 0.2 1 25°C 0.6 0.001 IC, COLLECTOR CURRENT (A) 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 3. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) 0.01 Figure 4. Base Emitter Saturation Voltage vs. Collector Current 1.2 VCE = 1 V 1.1 1.0 0.9 0.8 0.7 −55°C 25°C 0.6 0.5 0.4 0.3 0.2 150°C 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 5. Base Emitter Voltage vs. Collector Current 160 10 10 ms IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) TJ = 25°C 120 80 Cib 40 1s Cob Cib -5.0 -1.0 -1.0 -2.0 -1.5 -3.0 -2.0 -4.0 Thermal Limit 0.1 Single Pulse Test @ TA = 25°C 0.01 0.1 -2.5 -5.0 1 ms 1.0 Cob 0 100 ms VR, REVERSE VOLTAGE (VOLTS) 1.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 7. Safe Operating Area Figure 6. Capacitances http://onsemi.com 3 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE R DATE 02 OCT 2018 SCALE 1:1 q q DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com SOT−223 (TO−261) CASE 318E−04 ISSUE R STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE NC CATHODE STYLE 6: PIN 1. 2. 3. 4. RETURN INPUT OUTPUT INPUT STYLE 7: PIN 1. 2. 3. 4. ANODE 1 CATHODE ANODE 2 CATHODE STYLE 11: PIN 1. MT 1 2. MT 2 3. GATE 4. MT 2 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 8: STYLE 12: PIN 1. INPUT 2. OUTPUT 3. NC 4. OUTPUT CANCELLED DATE 02 OCT 2018 STYLE 4: PIN 1. 2. 3. 4. SOURCE DRAIN GATE DRAIN STYLE 5: PIN 1. 2. 3. 4. STYLE 9: PIN 1. 2. 3. 4. INPUT GROUND LOGIC GROUND STYLE 10: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE DRAIN GATE SOURCE GATE STYLE 13: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR GENERIC MARKING DIAGRAM* AYW XXXXXG G 1 A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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