NSVMMBT5401LT3G

MMBT5401L, SMMBT5401L, NSVMMBT5401L High Voltage Transistor PNP Silicon www.onsemi.com Features • S and NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SOT−23 (TO−236) CASE 318 STYLE 6 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage VCBO −160 Vdc Emitter −Base Voltage VEBO −5.0 Vdc IC −500 mAdc Collector Current − Continuous COLLECTOR 3 1 BASE 2 EMITTER Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate Above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate Above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 2L M G G 1 2L M G = Specific Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in 99.5% alumina. Package Shipping† MMBT5401LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SMMBT5401LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBT5401LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel NSVMMBT5401LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994 December, 2017 − Rev. 14 1 Publication Order Number: MMBT5401LT1/D MMBT5401L, SMMBT5401L, NSVMMBT5401L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max −150 − −160 − −5.0 − − − −50 −50 50 60 50 − 240 − − − −0.2 −0.5 − − −1.0 −1.0 100 300 − 6.0 40 200 − 8.0 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −100 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO Collector−Base Cutoff Current (VCB = −120 Vdc, IE = 0) (VCB = −120 Vdc, IE = 0, TA = 100°C) Vdc Vdc Vdc ICBO nAdc mAdc ON CHARACTERISTICS DC Current Gain (IC = −1.0 mAdc, VCE = −5.0 Vdc) (IC = −10 mAdc, VCE = −5.0 Vdc) (IC = −50 mAdc, VCE = −5.0 Vdc) hFE Collector −Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) VBE(sat) − Vdc Vdc SMALL− SIGNAL CHARACTERISTICS Current −Gain — Bandwidth Product (IC = −10 mAdc, VCE = −10 Vdc, f = 100 MHz) fT Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) MHz Cobo Small Signal Current Gain (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hfe Noise Figure (IC = −200 mAdc, VCE = −5.0 Vdc, RS = 10 W, f = 1.0 kHz) NF pF − dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 MMBT5401L, SMMBT5401L, NSVMMBT5401L 200 150 h FE, CURRENT GAIN TJ = 125°C 100 25°C 70 50 -55°C VCE = - 1.0 V VCE = - 5.0 V 30 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (mA) 20 10 30 50 100 10 20 50 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 0.5 10 mA 30 mA 100 mA 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 Figure 2. Collector Saturation Region 103 IC, COLLECTOR CURRENT (A) μ VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 102 VCE = 30 V IC = ICES 101 TJ = 125°C 100 75°C 10-1 10-2 REVERSE 25°C 10-3 0.3 0.2 FORWARD 0.1 0 0.1 0.2 0.3 0.4 0.5 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 3. Collector Cut−Off Region www.onsemi.com 3 0.6 0.7 MMBT5401L, SMMBT5401L, NSVMMBT5401L 1.0 IC/IB = 10 0.18 IC/IB = 10 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.20 0.15 0.13 150°C 0.10 25°C 0.08 0.05 −55°C 0.03 0.8 25°C 0.7 150°C 0.6 0.5 0.4 0.3 0.2 0 0.0001 0.001 0.01 0.0001 0.1 IC, COLLECTOR CURRENT (A) θV, TEMPERATURE COEFFICIENT (mV/ °C) VBE(on), BASE−EMITTER VOLTAGE (V) VCE = 10 V −55°C 0.8 0.7 25°C 0.6 0.5 150°C 0.4 0.3 0.2 0.0001 0.001 0.01 2.5 1.5 1.0 0.5 -0.5 -1.0 -1.5 qVB for VBE(sat) -2.0 -2.5 0.1 0.1 qVC for VCE(sat) 0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 6. Base Emitter Voltage vs. Collector Current 100 70 50 C, CAPACITANCE (pF) VCC -30 V 100 10 ms INPUT PULSE tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 0.25 mF 3.0 k RC Vout RB 5.1 k Vin 100 50 100 Figure 7. Temperature Coefficients 10.2 V Vin 0.1 TJ = - 55°C to 135°C 2.0 IC, COLLECTOR CURRENT (A) VBB +8.8 V 0.01 Figure 5. Base Emitter Saturation Voltage vs. Collector Current 1.1 0.9 0.001 IC, COLLECTOR CURRENT (A) Figure 4. Collector Emitter Saturation Voltage vs. Collector Current 1.0 −55°C 0.9 TJ = 25°C 30 Cibo 20 10 7.0 5.0 Cobo 3.0 1N914 2.0 1.0 0.2 Values Shown are for IC @ 10 mA Figure 8. Switching Time Test Circuit 0.3 2.0 3.0 5.0 7.0 0.5 0.7 1.0 VR, REVERSE VOLTAGE (VOLTS) Figure 9. Capacitances www.onsemi.com 4 10 20 MMBT5401L, SMMBT5401L, NSVMMBT5401L 1000 700 500 2000 IC/IB = 10 TJ = 25°C tr @ VCC = 120 V tr @ VCC = 30 V 200 t, TIME (ns) t, TIME (ns) 300 1000 700 500 100 70 50 td @ VBE(off) = 1.0 V VCC = 120 V 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 tf @ VCC = 30 V 300 200 ts @ VCC = 120 V 30 50 100 20 0.2 0.3 0.5 200 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 10. Turn−On Time Figure 11. Turn−Off Time 50 100 200 1 IC, COLLECTOR CURRENT (A) 1000 fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) tf @ VCC = 120 V 100 70 50 30 20 IC/IB = 10 TJ = 25°C VCE = 1 V TA = 25°C 100 10 0.1 10 mSec 0.1 1 Sec 0.01 0.001 1 10 1 100 IC, COLLECTOR CURRENT (A) 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 12. Current Gain Bandwidth Product Figure 13. Safe Operating Area www.onsemi.com 5 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. 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