NTA7002NT1G

NTA7002N Small Signal MOSFET 30 V, 154 mA, Single, N−Channel, Gate ESD Protection, SC−75 Features http://onsemi.com RDS(on) Typ @ VGS 1.4 W @ 4.5 V 2.3 W @ 2.5 V 3 ID MAX (Note 1) 154 mA • • • • Low Gate Charge for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate Pb−Free Package is Available V(BR)DSS 30 V Applications • Power Management Load Switch • Level Shift • Portable Applications such as Cell Phones, Media Players, Digital Cameras, PDA’s, Video Games, Hand−Held Computers, etc. MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current Steady State = 25°C Steady State = 25°C tP v 10 ms Symbol VDSS VGS ID PD IDM TJ, TSTG ISD TL Value 30 "10 154 300 618 −55 to 150 154 260 Unit V V mA mW Gate 1 2 N−Channel PIN CONNECTIONS SC−75 (3−Leads) 1 3 mA °C mA °C 3 Drain Operating Junction and Storage Temperature Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) Source 2 (Top View) MARKING DIAGRAM 3 2 THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State (Note 1) Symbol RqJA Max 416 Unit °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). T6 MG SC−75 / SOT−416 G CASE 463 1 2 STYLE 5 T6 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 1 ORDERING INFORMATION Device NTA7002NT1 NTA7002NT1G Package SC−75 SC−75 (Pb−Free) Shipping † 3000 Tape & Reel 3000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 1 July, 2005 − Rev. 1 Publication Order Number: NTA7002N/D NTA7002N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current Gate−to−Source Leakage Current Gate−to−Source Leakage Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Drain−to−Source On Resistance VGS(TH) RDS(on) VDS = VGS, ID = 100 mA VGS = 4.5 V, ID = 154 mA VGS = 2.5 V, ID = 154 mA Forward Transconductance CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Drain−Source Diode Characteristics Forward Diode Voltage VSD VGS = 0 V, IS = 0.154 mA 0.77 0.9 V td(ON) tr td(OFF) tf VGS = 4.5 V, VDS = 5.0 V, ID = 75 mA, RG = 10 W 13 15 98 60 ns ns CISS COSS CRSS VDS = 5.0 V, f = 1 MHz, VGS = 0 V 11.5 10 3.5 pF gFS VDS = 3 V, ID = 154 mA 0.5 1.0 1.4 2.3 80 1.5 7.0 7.5 V W mS V(BR)DSS IDSS IDSS IGSS IGSS IGSS VGS = 0 V, ID = 100 mA VGS = 0 V, VDS = 30 V VGS = 0 V, VDS = 20 V, T = 85 °C VDS = 0 V, VGS = ±10 V VDS = 0 V, VGS = ±5 V VDS = 0 V, VGS = ±5 V T = 85 °C 30 1.0 1.0 ±25 ±1.0 ±1.0 V mA mA mA mA mA Symbol Test Condition Min Typ Max Unit 2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTA7002N TYPICAL PERFORMANCE CURVES 0.2 ID, DRAIN CURRENT (AMPS) 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0 0.4 0.8 1.2 1.6 1.4 V 1.2 V 2.0 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS = 10 V 5V 2.8 V 2.4 V TJ = 25°C ID, DRAIN CURRENT (AMPS) 0.2 VDS = 5 V 0.16 2V 0.12 0.08 TJ = 125°C 0.04 0 0.6 TJ = 25°C TJ = −55°C 0.8 1 1.2 1.4 1.6 1.8 2 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 2.5 VGS = 4.5 V 2 TJ = 125°C RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 2.5 Figure 2. Transfer Characteristics TJ = 25°C VGS = 2.5 V 2 1.5 TJ = 25°C 1 TJ = −55°C 0.5 0 0.1 0.15 0.05 ID, DRAIN CURRENT (AMPS) 0.2 1.5 VGS = 4.5 V 1 0.5 0 0.05 0.1 0.15 ID, DRAIN CURRENT (AMPS) 0.2 Figure 3. On−Resistance vs. Drain Current and Temperature 2 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 −50 1 −25 0 25 50 75 100 125 150 ID = 0.15 A VGS = 4.5 V IDSS, LEAKAGE (nA) 100 1000 Figure 4. On−Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150°C 10 TJ = 125°C 0 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 NTA7002N TYPICAL PERFORMANCE CURVES 25 Ciss Crss t, TIME (ns) 100 TJ = 25°C 1000 VDD = 5.0 V ID = 75 mA VGS = 4.5 V td(off) tf tr td(on) C, CAPACITANCE (pF) 20 15 10 Ciss 5 0 10 VDS = 0 V 5 VGS 0 VDS VGS = 0 V 5 10 15 Coss Crss 20 10 1 1 10 RG, GATE RESISTANCE (OHMS) 100 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation Figure 8. Resistive Switching Time Variation vs. Gate Resistance 0.16 IS, SOURCE CURRENT (AMPS) 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0.5 0.65 0.55 0.6 0.7 0.75 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) 0.8 VGS = 0 V TJ = 25°C Figure 9. Diode Forward Voltage vs. Current http://onsemi.com 4 NTA7002N PACKAGE DIMENSIONS SC−75 / SOT−416 CASE 463−01 ISSUE F −E− 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 INCHES NOM 0.031 0.002 0.008 0.006 0.063 0.031 0.04 BSC 0.004 0.006 0.061 0.063 MIN 0.027 0.000 0.006 0.004 0.059 0.027 e 1 −D− b 3 PL 0.20 (0.008) M D HE 0.20 (0.008) E DIM A A1 b C D E e L HE MAX 0.035 0.004 0.012 0.010 0.067 0.035 0.008 0.065 C A L A1 STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NTA7002N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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