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Is Now
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product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
NTP75N06L, NTB75N06L
Power MOSFET
75 Amps, 60 Volts, Logic
Level
N−Channel TO−220 and D2PAK
http://onsemi.com
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
75 AMPERES, 60 VOLTS
RDS(on) = 11 mW
Features
N−Channel
• Pb−Free Packages are Available
D
Typical Applications
•
•
•
•
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
G
S
4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
Vdc
Drain−to−Gate Voltage (RGS = 10 MW)
VDGR
60
Vdc
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tpv10 ms)
4
1
3
Vdc
VGS
VGS
"20
"15
ID
ID
75
50
225
Adc
PD
214
1.4
2.4
W
W/°C
W
TJ, Tstg
−55 to
+175
°C
844
mJ
1
2
3
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 5.0 Vdc, L = 0.3 mH
IL(pk) = 75 A, VDS = 60 Vdc)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
IDM
EAS
RqJC
RqJA
0.7
62.5
TL
260
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in2).
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 1
1
D2PAK
CASE 418B
STYLE 2
TO−220AB
CASE 221A
STYLE 5
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Apk
°C/W
2
4
Drain
4
Drain
75N06LG
AYWW
NTP75N06L
AYWW
1
Gate
3
Source
1
Gate
2
Drain
3
Source
2
Drain
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NTP75N06L/D
NTP75N06L, NTB75N06L
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
60
−
72
74
−
−
−
−
−
−
10
100
−
−
±100
1.0
−
1.58
6.0
2.0
−
−
9.0
11
−
−
0.75
0.61
0.99
−
gFS
−
55
−
mhos
Ciss
−
3122
4370
pF
Coss
−
1029
1440
Crss
−
276
390
td(on)
−
22
32
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 2)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
IGSS
Vdc
mV/°C
mAdc
nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Note 2)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance (Note 2)
(VGS = 5.0 Vdc, ID = 37.5 Adc)
RDS(on)
Static Drain−to−Source On−Voltage (Note 2)
(VGS = 5.0 Vdc, ID = 75 Adc)
(VGS = 5.0 Vdc, ID = 37.5 Adc, TJ = 150°C)
VDS(on)
Forward Transconductance (Note 2) (VDS = 15 Vdc, ID = 37.5 Adc)
Vdc
mV/°C
mW
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 30 Vdc, ID = 75 Adc,
VGS = 5.0 Vdc, RG = 9.1 W) (Note 2)
Fall Time
Gate Charge
(VDS = 48 Vdc, ID = 75 Adc,
VGS = 5.0 Vdc) (Note 2)
ns
tr
−
265
370
td(off)
−
113
160
tf
−
170
240
QT
−
66
92
Q1
−
9.0
−
Q2
−
47
−
VSD
−
−
1.0
0.9
1.15
−
Vdc
trr
−
70
−
ns
ta
−
43
−
tb
−
27
−
QRR
−
0.16
−
nC
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 75 Adc, VGS = 0 Vdc) (Note 2)
(IS = 75 Adc, VGS = 0 Vdc, TJ = 150°C)
Reverse Recovery Time
(IS = 75 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 2)
Reverse Recovery Stored Charge
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
mC
NTP75N06L, NTB75N06L
160
VGS = 4.5 V
VGS = 10 V
140
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
160
VGS = 5 V
120
VGS = 6 V
VGS = 4 V
100
80
VGS = 7 V
60
VGS = 8 V
VGS = 3.5 V
40
VGS = 3 V
20
2
4
3
80
60
40
TJ = 25°C
20
TJ = 100°C
TJ = −55°C
2.2
1.8
2.6
3
3.4
3.8
4.2
4.6
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
VGS = 5 V
0.016
TJ = 100°C
0.012
TJ = 25°C
0.008
TJ = −55°C
0.004
0
20
40
60
80
100
120
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.02
5
0.02
VGS = 10 V
0.016
TJ = 100°C
0.012
TJ = 25°C
0.008
TJ = −55°C
0.004
0
20
40
60
80
100
120
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2
1.8
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100000
ID = 37.5 A
VGS = 5 V
VGS = 0 V
TJ = 150°C
10000
1.6
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
1
120
0
1.4
0
0
VDS w 10 V
140
1.4
1.2
1
TJ = 125°C
1000
TJ = 100°C
100
0.8
0.6
−50
10
−25
0
25
50
75
100
125
150
175
0
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3
60
VGS, GATE−TO−SOURCE VOLTAGE (V)
NTP75N06L, NTB75N06L
12000
VDS = 0 V
VGS = 0 V
TJ = 25°C
C, CAPACITANCE (pF)
10000
Ciss
8000
Crss
6000
Ciss
4000
Coss
2000
Crss
0
10
5
VGS 0 VDS 5
15
20
10
25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE (V)
6
QT
5
Q2
4
3
2
1
0
ID = 75 A
TJ = 25°C
0
10
80
IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
tr
tf
100
td(off)
td(on)
1
10
40
50
70
60
VGS = 0 V
TJ = 25°C
70
60
50
40
30
20
10
0
0.6
100
0.64 0.68 0.72 0.76
0.8
0.84 0.86 0.92 0.96
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variations
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
VGS = 15 V
SINGLE PULSE
TC = 25°C
10 ms
100
100 ms
1 ms
10 ms
10
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
0.1
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
RG, GATE RESISTANCE (W)
1000
ID, DRAIN CURRENT (AMPS)
30
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VDS = 30 V
ID = 75 A
VGS = 5 V
10
20
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
VGS
Q1
1
dc
10
100
ID = 75 A
800
600
400
200
0
25
50
75
100
125
150
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
4
175
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
NTP75N06L, NTB75N06L
1.0
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
t, TIME (ms)
0.1
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
1.0
10
Figure 13. Thermal Response
ORDERING INFORMATION
Package
Shipping †
NTP75N06L
TO−220AB
50 Units / Rail
NTB75N06L
D2PAK
50 Units / Rail
NTB75N06LG
D2PAK
50 Units / Rail
Device
(Pb−Free)
D2PAK
800 Units / Tape & Reel
D2PAK
(Pb−Free)
800 Units / Tape & Reel
NTB75N06LT4
NTB75N06LT4G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTP75N06L, NTB75N06L
PACKAGE DIMENSIONS
D2PAK
CASE 418B−04
ISSUE J
C
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
E
V
W
−B−
4
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
A
1
2
S
3
−T−
SEATING
PLANE
K
W
J
G
D 3 PL
0.13 (0.005)
VARIABLE
CONFIGURATION
ZONE
H
M
T B
M
N
R
M
STYLE 2:
PIN 1.
2.
3.
4.
P
U
L
L
M
L
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
8.38
0.33
1.016
0.04
10.66
0.42
5.08
0.20
3.05
0.12
17.02
0.67
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
6
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
GATE
DRAIN
SOURCE
DRAIN
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
NTP75N06L, NTB75N06L
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AA
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−− 0.080
STYLE 5:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
GATE
DRAIN
SOURCE
DRAIN
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
Literature Distribution Center for ON Semiconductor
USA/Canada
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
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7
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
NTP75N06L/D