NTD32N06G

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NTD32N06 Power MOSFET 32 Amps, 60 Volts, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Features • • • • • • • • Pb−Free Packages are Available Smaller Package than MTB36N06V Lower RDS(on) Lower VDS(on) Lower Total Gate Charge Lower and Tighter VSD Lower Diode Reverse Recovery Time Lower Reverse Recovery Stored Charge V(BR)DSS RDS(on) TYP ID MAX 60 V 26 m
32 A N−Channel D Typical Applications G Power Supplies Converters Power Motor Controls Bridge Circuits S MARKING DIAGRAMS MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit VDSS 60 Vdc Drain−to−Gate Voltage (RGS = 10 M
) VDGR 60 Vdc Gate−to−Source Voltage, Continuous − Non−Repetitive (tp10 ms) VGS VGS
20
30 Vdc ID ID 32 22 90 93.75 0.625 2.88 1.5 −55 to +175 Adc Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tp10 s) Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (Note 3) (VDD = 50 Vdc, VGS = 10 Vdc, L = 1.0 mH, IL(pk) = 25 A, VDS = 60 Vdc, RG = 25
) Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds IDM PD TJ, Tstg EAS August, 2004 − Rev. 3 4 1 2 313 2 1 3 Drain Gate Source 4 Drain 4 mJ 1 RJC RJA RJA 1.6 52 100 °C/W TL 260 °C 1 DPAK CASE 369C STYLE 2 3 Apk W W/°C W W °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 1″ pad size, (Cu Area 1.127 in2). 2. When surface mounted to an FR4 board using minimum recommended pad size, (Cu Area 0.412 in2). 3. Repetitive rating; pulse width limited by maximum junction temperature.  Semiconductor Components Industries, LLC, 2004 4 Drain AYWW 32N06 Rating Drain−to−Source Voltage 2 DPAK−3 CASE 369D STYLE 2 AYWW 32N06 • • • • 3 1 2 3 Gate Drain Source 32N06 A Y WW = Device Code = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Publication Order Number: NTD32N06/D NTD32N06 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 60 − 70 41.6 − − − − − − 1.0 10 − − ±100 2.0 − 2.8 7.0 4.0 − − 21 26 − − − 0.417 0.680 0.633 0.62 − − gFS − 21.1 − mhos Ciss − 1231 1725 pF Coss − 346 485 Crss − 77 160 td(on) − 10 25 tr − 84 180 td(off) − 31 70 tf − 93 200 QT − 33 60 Q1 − 6.0 − Q2 − 15 − VSD − − − 0.89 0.96 0.75 1.0 − − Vdc trr − 52 − ns ta − 37 − tb − 14.3 − QRR − 0.095 − OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 4) (VGS = 0 Vdc, ID = 250 Adc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C Adc nAdc ON CHARACTERISTICS (Note 4) Gate Threshold Voltage (Note 4) (VDS = VGS, ID = 250 Adc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−Resistance (Note 4) (VGS = 10 Vdc, ID = 16 Adc) RDS(on) Static Drain−to−Source On−Voltage (Note 4) (VGS = 10 Vdc, ID = 20 Adc) (VGS = 10 Vdc, ID = 32 Adc) (VGS = 10 Vdc, ID = 16 Adc, TJ = 150°C) VDS(on) Forward Transconductance (Note 4) (VDS = 6 Vdc, ID = 16 Adc) Vdc mV/°C m
Vdc DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, Vd VGS = 0 Vdc, Vd f = 1.0 MHz) Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = 30 Vdc, ID = 32 Adc, VGS = 10 Vdc, Vdc RG = 9.1
) (Note 4) Fall Time Gate Charge (VDS = 48 Vdc, Vd ID = 32 Adc, Ad VGS = 10 Vdc) (Note 4) ns nC SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 20 Adc, VGS = 0 Vdc) (Note 4) (IS = 32 Adc, VGS = 0 Vdc) (Note 4) (IS = 20 Adc, VGS = 0 Vdc, TJ = 150°C) Reverse Recovery Time (IS = 32 Adc, Ad VGS = 0 Vdc, Vd dIS/dt = 100 A/s) (Note 4) Reverse Recovery Stored Charge 4. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 C NTD32N06 60 60 VDS > = 10 V VGS = 6 V 50 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) VGS = 10 V VGS = 6.5 V 40 VGS = 7 V 30 VGS = 8 V VGS = 5.5 V VGS = 5 V 20 VGS = 4.5 V 10 50 40 30 20 TJ = 25°C 10 TJ = 100°C VGS = 4 V TJ = −55°C 0 0 1 3 2 3 4 4.6 5 5.4 5.8 6.2 RDS(on), DRAIN−TO−SOURCE RESISTANCE (
) TJ = 100°C 0.026 TJ = 25°C 0.022 0.018 TJ = −55°C 0.014 0 10 20 30 40 50 60 7 6.6 Figure 2. Transfer Characteristics 0.03 0.024 0.023 0.022 VGS = 10 V 0.021 0.02 VGS = 15 V 0.019 0.018 0 10 20 30 40 50 60 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10000 ID = 16 A VGS = 10 V VGS = 0 V IDSS, LEAKAGE (nA) 1.6 4.2 Figure 1. On−Region Characteristics 0.034 1.8 3.8 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) VGS = 10 V 0.01 3.4 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.038 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE (
) 0 1.4 1.2 1 TJ = 150°C 1000 TJ = 125°C 100 TJ = 100°C 0.8 0.6 −50 −25 10 0 25 50 75 100 125 150 175 0 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 60 3200 VGS = 0 V VDS = 0 V TJ = 25°C C, CAPACITANCE (pF) 2800 Ciss 2400 2000 Crss Ciss 1600 1200 800 Coss 400 Crss 0 10 5 VGS 0 VDS 5 10 15 25 20 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) NTD32N06 Q1 Q2 6 4 2 ID = 32 A TJ = 25°C 0 0 4 8 12 16 20 24 28 32 Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 36 32 100 IS, SOURCE CURRENT (AMPS) t, TIME (ns) 8 VGS Qg, TOTAL GATE CHARGE (nC) VDS = 30 V ID = 32 A VGS = 10 V tr tf td(off) td(on) 1 10 100 24 20 16 12 8 4 0 0.6 0.64 0.68 0.72 0.76 0.8 0.84 0.88 0.92 0.96 Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current RDS(on) Limit Thermal Limit Package Limit 100 dc 10 10 ms 1 ms 100 s 1 Mounted on 3″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with one die operating,10 s max 1 10 100 EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) VGS = 20 V SINGLE PULSE TC = 25°C 0.1 0.1 VGS = 0 V TJ = 25°C 28 RG, GATE RESISTANCE (
) 1000 ID, DRAIN CURRENT (AMPS) QT 10 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1000 10 12 350 ID = 32 A 300 250 200 150 100 50 0 25 50 75 100 125 150 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 175 NTD32N06 EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 10 Normalized to RJC at Steady State 1 r(t), 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t, TIME (s) Figure 13. Thermal Response EFFECTIVE TRANSIENT THERMAL RESPONSE (NORMALIZED) 10 Normalized to RJA at Steady State, 1″ square Cu Pad, Cu Area 1.127 in2, 3 x 3 inch FR4 board 1 r(t), 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t, TIME (s) Figure 14. Thermal Response http://onsemi.com 5 10 100 1000 NTD32N06 ORDERING INFORMATION Device NTD32N06 Package Shipping† DPAK 75 Units/Rail NTD32N06G DPAK (Pb−Free) 75 Units/Rail NTD32N06−1 DPAK−3 75 Units/Rail DPAK−3 (Pb−Free) 75 Units/Rail DPAK 2500 Tape & Reel DPAK (Pb−Free) 2500 Tape & Reel NTD32N06−1G NTD32N06T4 NTD32N06T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 NTD32N06 PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O −T− C B V SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M T INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm  inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− NTD32N06 PACKAGE DIMENSIONS DPAK−3 CASE 369D−01 ISSUE B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C B E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F H D G 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 8 For additional information, please contact your local Sales Representative. NTD32N06/D