NTGD4161P_06

NTGD4161P Power MOSFET −30 V, −2.3 A, Dual P−Channel, TSOP−6 Features • • • • • Fast Switching Speed Low Gate Charge Low RDS(on) Independently Connected Devices to Provide Design Flexibility This is a Pb−Free Device http://onsemi.com V(BR)DSS −30 V RDS(on) Max 160 mW @ −10 V 280 mW @ −4.5 V Applications • Load Switch • Battery Protection • Portable Devices Like PDAs, Cellular Phones and Hard Drives MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State t≤5s Power Dissipation (Note 1) Steady State t≤5s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady State TA = 25°C TA = 85°C TA = 25°C tp = 10 ms PD IDM TJ, TSTG IS TL ID TA = 25°C TA = 85°C TA = 25°C TA = 25°C PD Symbol VDSS VGS ID Value −30 ±20 −2.1 −1.5 −2.3 1.1 1.3 −1.5 −1.1 0.6 −10 −55 to 150 −0.8 260 W A °C A °C A W Unit V V A P−Channel (MOSFET1) D1 P−Channel (MOSFET2) D2 G1 G2 S1 S2 MARKING DIAGRAM D1 S1 D2 1 TSOP−6 CASE 318G STYLE 13 S8 M G S8 MG G G1 S2 G2 = Specific Device Code = Date Code* = Pb−Free Package Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) (Note: Microdot may be in either location) THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient − Steady State (Note 1) Junction−to−Ambient − Steady State (Note 2) Junction−to−Ambient − t ≤ 5 s (Note 1) Junction−to−Case − Steady State (Note 1) RqJC Symbol RqJA Max 115 225 95 40 Unit °C/W *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device NTGD4161PT1G Package TSOP−6 (Pb−Free) Shipping † 3000 / Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted to an FR4 board using 1 in. pad size (Cu. area = 1.2 in2 [1 oz] including traces) 2. When surface mounted to an FR4 board using minimum recommended pad size (Cu. area = 0.047 in2) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 1 September, 2006 − Rev. 1 Publication Order Number: NTGD4161P/D NTGD4161P ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS = 0 V, VDS = −24 V TJ = 25°C TJ = 125°C VGS = 0 V, ID = −250 mA −30 22 −1.0 −10 ±100 nA V mV/°C mA Symbol Test Condition Min Typ Max Unit Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS(TH)/TJ RDS(on) VGS = VDS, ID = −250 mA −1.0 −1.9 −4.7 −3.0 V mV/°C VGS = −10 V, ID = −2.1 A VGS = −4.5 V, ID = −1.6 A 105 190 2.7 160 280 mΩ Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time gFS VDS = −5.0 V, ID = −2.1 A S CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = −10 V, VDS = −5.0 V, ID = −2.1A VDS = −15 V, f = 1.0 MHz, VGS = 0 V 281 50 28 5.6 0.65 1.2 0.90 7.1 pF nC td(on) tr td(off) tf VGS = −4.5 V, VDD = −15 V, ID = −1.0 A, RG = 6.0 Ω 7.6 9.2 12.5 4.5 14 23 20 12 ns DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = −0.8 A TJ = 25°C TJ = 125°C −0.79 −0.65 8.0 VGS = 0 V, dIS/dt = 100 A/ms, IS = −0.8 A 5.7 2.3 3 nC ns −1.2 V Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge tRR ta tb QRR 3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTGD4161P TYPICAL PERFORMANCE CURVES 5 −ID, DRAIN CURRENT (A) 5 −10 V −4.5 V TJ = 25°C −ID, DRAIN CURRENT (A) VDS ≥ −3 V 4 −4 V 4 3 −3.8 V −3.6 V −3.4 V 3 2 2 150°C −40°C 1 2 3 4 −VGS, GATE−TO−SOURCE VOLTAGE (V) 5 1 −3.2 V −3 V −2.8 V 0 1 2 3 4 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 5 1 25°C 0 0 Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.5 ID = −2.1 A 0.4 0.4 0.35 0.3 VGS = −4.5 V 0.25 0.2 0.15 0.1 VGS = −10 V 0.05 0 0 1 2 3 4 5 6 −ID, DRAIN CURRENT (A) TJ = 25°C 0.3 TJ = 125°C 0.2 TJ = 25°C 0.1 0 3 4 5 6 7 8 9 10 −VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. On−Resistance versus Gate−to−Source Voltage Figure 4. On−Resistance versus Drain Current and Temperature RDS(on), DRAIN−TO−SOURCE RESISTANCE 0.3 1000 VGS = 0 V ID = −1.6 A VGS = −4.5 V −IDSS, LEAKAGE(nA) TJ = 150°C 0.2 100 TJ = 125°C 0.1 ID = −2.1 A VGS = −10 V 0.0 −50 10 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. On−Resistance Variation with Temperature http://onsemi.com 3 NTGD4161P TYPICAL PERFORMANCE CURVES 350 300 C, CAPACITANCE (pF) 250 200 150 100 50 0 0 CRSS 5 10 15 20 25 30 COSS TJ = 25°C VGS = 0 V CISS −VGS, GATE−TO−SOURCE VOLTAGE (V) 10 QT 8 VGS 6 QGS QGD 10 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 8 6 4 4 2 VDS 0 0 1 2 3 4 5 QG, TOTAL GATE CHARGE (nC) ID = −2.1 A TJ = 25°C 2 0 6 DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 100 0.8 −IS, SOURCE CURRENT (A) −ID, DRAIN CURRENT (A) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.3 0.4 0.5 0.6 TJ = 25°C TJ = −40°C 0.7 0.8 0.9 1.0 TJ = 150°C TJ = 125°C VGS = 0 V 10 VGS = −10 V Single Pulse TA = 25°C 100 ms 1 ms 1 10 ms 0.1 RDS(on) Limit Thermal Limit Package Limit 0.01 0.1 1 10 100 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) dc −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage versus Current Figure 10. Maximum Rated Forward Biased Safe Operating Area 1.0 RqJA, EFFECTIVE TRANSIENT THERMAL RESPONSE (NORMALIZED) 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 1E−06 Single Pulse 1E−05 1E−04 1E−03 1E−02 t, time (s) 1E−01 1E+00 1E+01 1E+02 1E+03 Figure 11. FET Thermal Response http://onsemi.com 4 NTGD4161P PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE S D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − 6 5 1 2 4 3 HE E b e q 0.05 (0.002) A1 A L c DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° SOLDERING FOOTPRINT* 2.4 0.094 STYLE 13: PIN 1. GATE 1 2. SOURCE 2 3. GATE 2 4. DRAIN 2 5. SOURCE 1 6. DRAIN 1 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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