NTHL020N090SC1

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 20 mohm, 900V, M1, TO-247-3L V(BR)DSS RDS(ON) MAX ID MAX 900 V 28 mW @ 15 V 118 A D NTHL020N090SC1 Features • • • • • • Typ. RDS(on) = 20 mW @ VGS = 15 V Typ. RDS(on) = 16 mW @ VGS = 18 V Ultra Low Gate Charge (QG(tot) = 196 nC) Low Effective Output Capacitance (Coss = 296 pF) 100% UIL Tested This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) G S N−CHANNEL MOSFET Typical Applications • UPS • DC−DC Converter • Boost Inverter G Symbol Value Unit Drain−to−Source Voltage VDSS 900 V Gate−to−Source Voltage VGS +22/−8 V TC < 175°C VGSop +15/−5 V TC = 25°C IDC 118 A PDC 503 W IDC 83 A PDC 251 W IDM 472 A TJ, Tstg −55 to +175 °C IS 153 A EAS 264 mJ Recommended Operation Values of Gate − Source Voltage Continuous Drain Current RqJC Steady State Power Dissipation RqJC Continuous Drain Current RqJC Steady State TC = 100°C Power Dissipation RqJC Pulsed Drain Current (Note 2) TA = 25°C Operating Junction and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL = 23 Apk, L = 1 mH) (Note 3) April, 2022 − Rev. 3 MARKING DIAGRAM $Y&Z&3&K NTHL020 N090SC1 $Y &Z &3 &K NTHL020N090SC1 Device NTHL020N090SC1 1 = onsemi Logo = Assembly Plant Code = Date Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Repetitive rating, limited by max junction temperature. 3. EAS of 162 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 23 A, VDD = 100 V, VGS = 15 V. © Semiconductor Components Industries, LLC, 2019 S TO−247 LONG LEADS CASE 340CX MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter D Package TO−247 Long Lead Shipping 30 Units / Tube Publication Order Number: NTHL020N090SC1/D NTHL020N090SC1 Table 1. THERMAL CHARACTERISTICS Parameter Symbol Max Unit Thermal Resistance Junction−to−Case (Note 1) RθJC 0.30 °C/W Thermal Resistance Junction−to−Ambient (Note 1) RθJA 40 °C/W Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 1 mA Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 1 mA, refer to 25°C Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current IGSS VGS = 0 V, VDS = 900 V 900 V 500 mV/° C TJ = 25°C 100 mA TJ = 175°C 250 mA ±1 mA 4.3 V VGS = +22/−8 V, VDS = 0 V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) Recommended Gate Voltage Drain−to−Source On Resistance VGS = VDS , ID = 20 mA VGOP RDS(on) Forward Transconductance gFS 1.8 2.7 −5 +15 V 28 mW VGS = 15 V, ID = 60 A, TJ = 25°C 20 VGS = 18 V, ID = 60 A, TJ = 25°C 16 VGS = 15 V, ID = 60 A, TJ = 175°C 27 VDS = 20 V, ID = 60 A 49 S VGS = 0 V, f = 1 MHz, VDS = 450 V 4415 pF CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 296 24 VGS = −5/15 V, VDS = 720 V, ID = 60 A Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS 78 Gate−to−Drain Charge QGD 55 Gate−Resistance RG nC 196 42 f = 1 MHz 1.6 W VGS = −5/15 V, VDS = 720 V, ID = 60 A, RG = 2.5 W, Inductive Load 40 ns SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time td(ON) tr 63 td(OFF) 55 tf 13 Turn−On Switching Loss EON 2025 Turn−Off Switching Loss EOFF 201 Total Switching Loss ETOT 2226 Fall Time mJ DRAIN−SOURCE DIODE CHARACTERISTICS ISD VGS = −5 V, TJ = 25°C 153 A Pulsed Drain−Source Diode Forward Current (Note 2) ISDM VGS = −5 V, TJ = 25°C 472 A Forward Diode Voltage VSD VGS = −5 V, ISD = 30 A, TJ = 25°C Continuous Drain−Source Diode Forward Current www.onsemi.com 2 3.8 V NTHL020N090SC1 Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit DRAIN−SOURCE DIODE CHARACTERISTICS Reverse Recovery Time tRR Reverse Recovery Charge QRR Reverse Recovery Energy Peak Reverse Recovery Current VGS = −5/15 V, ISD = 60 A, dIS/dt = 1000 A/ms, VDS = 720 V 28 ns 199 nC EREC 4 mJ IRRM 14 A Charge Time Ta 16 ns Discharge Time Tb 12 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NTHL020N090SC1 TYPICAL CHARACTERISTICS 4 13 V VGS = 15 V RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE ID, DRAIN CURRENT (A) 200 12 V 150 100 10 V 9V 50 6V 0 4 2 0 6 7V 10 8 VGS = 10 V 12 V 3 13 V 2 15 V 1 0 30 0 60 120 90 150 VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 1.9 RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE 160 RDS(on), ON−RESISTANCE (mW) ID = 60 A VGS = 15 V 1.7 1.5 1.3 1.1 0.9 0.7 −75 −50 −25 0 25 50 75 80 40 TJ = 150°C TJ = 25°C 5 15 10 20 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. On−Resistance Variation with Temperature Figure 4. On−Resistance vs. Gate−to−Source Voltage TJ = 175°C 300 TJ = −55°C 80 TJ = 25°C 60 40 20 VDS = 20 V 3 120 TJ, JUNCTION TEMPERATURE (°C) 100 0 ID = 60 A 0 100 125 150 175 IS, REVERSE DRAIN CURRENT (A) 120 ID, DRAIN CURRENT (A) 9V 6 9 12 15 VGS = −5 V TJ = −55°C TJ = 175°C 30 TJ = 25°C 3 1 3 5 7 VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Diode Forward Voltage vs. Current www.onsemi.com 4 9 NTHL020N090SC1 TYPICAL CHARACTERISTICS (continued) VGS, GATE−TO−SOURCE VOLTAGE (V) 15 50K VDD = 180 V ID = 60 A VDD = 540 V 10K CAPACITANCE (pF) VDD = 720 V 10 5 0 −5 1K 100 50 150 Crss 10 200 0.1 1 100 10 Figure 7. Gate−to−Source Voltage vs. Total Charge Figure 8. Capacitance vs. Drain−to−Source Voltage 140 VGS = 15 V 120 TJ = 25°C 10 TJ = 150°C 1 0.001 0.01 0.1 1 10 80 60 40 0 100 RqJC = 0.30°C/W 25 50 75 100 TC, CASE TEMPERATURE (°C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs. Case Temperature 100K P(PK), PEAK TRANSIENT POWER (w) 10 ms 10 This area is limited by RDS(on) 100 ms Single Pulse TJ = Max Rated RqJC = 0.30°C/W TC = 25°C 0.1 150 125 tAV, TIME IN AVALANCHE (ms) 100 0.1 100 20 Typical performance based on characterization data 1000 1 800 VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) f = 1 MHz VGS = 0 V Qg, GATE CHARGE (nC) 100 ID, DRAIN CURRENT (A) Coss 100 1 0 Ciss 1 1 ms 10 ms 100 ms 10 100 1000 5000 Single Pulse RqJC = 0.30°C/W TC = 25°C 10K 1K 100 0.00001 0.0001 0.001 0.01 VDS, DRAIN−TO−SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 175 0.1 NTHL020N090SC1 TYPICAL CHARACTERISTICS (continued) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.01 0.001 0.02 0.01 P DM Single Pulse t1 t2 0.00001 0.001 0.0001 Notes: ZqJC (t) = r(t) x RqJC RqJC = 0.30°C/W Peak TJ = PDM x ZqJC (t) + TC Duty Cycle, D = t1/t2 0.01 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction−to−Ambient Transient Thermal Response Curve www.onsemi.com 6 0.1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CX ISSUE A DATE 06 JUL 2020 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG DOCUMENT NUMBER: DESCRIPTION: XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 98AON93302G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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