DATA SHEET
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Silicon Carbide (SiC)
MOSFET – 20 mohm, 900V,
M1, TO-247-3L
V(BR)DSS
RDS(ON) MAX
ID MAX
900 V
28 mW @ 15 V
118 A
D
NTHL020N090SC1
Features
•
•
•
•
•
•
Typ. RDS(on) = 20 mW @ VGS = 15 V
Typ. RDS(on) = 16 mW @ VGS = 18 V
Ultra Low Gate Charge (QG(tot) = 196 nC)
Low Effective Output Capacitance (Coss = 296 pF)
100% UIL Tested
This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
G
S
N−CHANNEL MOSFET
Typical Applications
• UPS
• DC−DC Converter
• Boost Inverter
G
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
900
V
Gate−to−Source Voltage
VGS
+22/−8
V
TC < 175°C
VGSop
+15/−5
V
TC = 25°C
IDC
118
A
PDC
503
W
IDC
83
A
PDC
251
W
IDM
472
A
TJ, Tstg
−55 to
+175
°C
IS
153
A
EAS
264
mJ
Recommended Operation Values of Gate − Source Voltage
Continuous Drain
Current RqJC
Steady
State
Power Dissipation
RqJC
Continuous Drain
Current RqJC
Steady
State
TC = 100°C
Power Dissipation
RqJC
Pulsed Drain Current (Note 2)
TA = 25°C
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (IL = 23 Apk, L = 1 mH) (Note 3)
April, 2022 − Rev. 3
MARKING DIAGRAM
$Y&Z&3&K
NTHL020
N090SC1
$Y
&Z
&3
&K
NTHL020N090SC1
Device
NTHL020N090SC1
1
= onsemi Logo
= Assembly Plant Code
= Date Code (Year & Week)
= Lot
= Specific Device Code
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. EAS of 162 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 23 A,
VDD = 100 V, VGS = 15 V.
© Semiconductor Components Industries, LLC, 2019
S
TO−247 LONG LEADS
CASE 340CX
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
D
Package
TO−247
Long Lead
Shipping
30 Units /
Tube
Publication Order Number:
NTHL020N090SC1/D
NTHL020N090SC1
Table 1. THERMAL CHARACTERISTICS
Parameter
Symbol
Max
Unit
Thermal Resistance Junction−to−Case (Note 1)
RθJC
0.30
°C/W
Thermal Resistance Junction−to−Ambient (Note 1)
RθJA
40
°C/W
Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 1 mA
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
ID = 1 mA, refer to 25°C
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
IGSS
VGS = 0 V,
VDS = 900 V
900
V
500
mV/°
C
TJ = 25°C
100
mA
TJ = 175°C
250
mA
±1
mA
4.3
V
VGS = +22/−8 V, VDS = 0 V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
Recommended Gate Voltage
Drain−to−Source On Resistance
VGS = VDS , ID = 20 mA
VGOP
RDS(on)
Forward Transconductance
gFS
1.8
2.7
−5
+15
V
28
mW
VGS = 15 V, ID = 60 A, TJ = 25°C
20
VGS = 18 V, ID = 60 A, TJ = 25°C
16
VGS = 15 V, ID = 60 A, TJ = 175°C
27
VDS = 20 V, ID = 60 A
49
S
VGS = 0 V, f = 1 MHz,
VDS = 450 V
4415
pF
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
296
24
VGS = −5/15 V, VDS = 720 V,
ID = 60 A
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
78
Gate−to−Drain Charge
QGD
55
Gate−Resistance
RG
nC
196
42
f = 1 MHz
1.6
W
VGS = −5/15 V, VDS = 720 V,
ID = 60 A, RG = 2.5 W,
Inductive Load
40
ns
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
td(ON)
tr
63
td(OFF)
55
tf
13
Turn−On Switching Loss
EON
2025
Turn−Off Switching Loss
EOFF
201
Total Switching Loss
ETOT
2226
Fall Time
mJ
DRAIN−SOURCE DIODE CHARACTERISTICS
ISD
VGS = −5 V, TJ = 25°C
153
A
Pulsed Drain−Source Diode Forward
Current (Note 2)
ISDM
VGS = −5 V, TJ = 25°C
472
A
Forward Diode Voltage
VSD
VGS = −5 V, ISD = 30 A, TJ = 25°C
Continuous Drain−Source Diode Forward
Current
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2
3.8
V
NTHL020N090SC1
Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Reverse Recovery Time
tRR
Reverse Recovery Charge
QRR
Reverse Recovery Energy
Peak Reverse Recovery Current
VGS = −5/15 V, ISD = 60 A,
dIS/dt = 1000 A/ms, VDS = 720 V
28
ns
199
nC
EREC
4
mJ
IRRM
14
A
Charge Time
Ta
16
ns
Discharge Time
Tb
12
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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NTHL020N090SC1
TYPICAL CHARACTERISTICS
4
13 V
VGS = 15 V
RDS(on), NORMALIZED DRAIN−TO−
SOURCE ON−RESISTANCE
ID, DRAIN CURRENT (A)
200
12 V
150
100
10 V
9V
50
6V
0
4
2
0
6
7V
10
8
VGS = 10 V
12 V
3
13 V
2
15 V
1
0
30
0
60
120
90
150
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
1.9
RDS(on), NORMALIZED DRAIN−TO−
SOURCE ON−RESISTANCE
160
RDS(on), ON−RESISTANCE (mW)
ID = 60 A
VGS = 15 V
1.7
1.5
1.3
1.1
0.9
0.7
−75 −50 −25
0
25
50
75
80
40
TJ = 150°C
TJ = 25°C
5
15
10
20
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with
Temperature
Figure 4. On−Resistance vs. Gate−to−Source
Voltage
TJ = 175°C
300
TJ = −55°C
80
TJ = 25°C
60
40
20
VDS = 20 V
3
120
TJ, JUNCTION TEMPERATURE (°C)
100
0
ID = 60 A
0
100 125 150 175
IS, REVERSE DRAIN CURRENT (A)
120
ID, DRAIN CURRENT (A)
9V
6
9
12
15
VGS = −5 V
TJ = −55°C
TJ = 175°C
30
TJ = 25°C
3
1
3
5
7
VGS, GATE−TO−SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
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4
9
NTHL020N090SC1
TYPICAL CHARACTERISTICS (continued)
VGS, GATE−TO−SOURCE VOLTAGE (V)
15
50K
VDD = 180 V
ID = 60 A
VDD = 540 V
10K
CAPACITANCE (pF)
VDD = 720 V
10
5
0
−5
1K
100
50
150
Crss
10
200
0.1
1
100
10
Figure 7. Gate−to−Source Voltage vs. Total
Charge
Figure 8. Capacitance vs. Drain−to−Source
Voltage
140
VGS = 15 V
120
TJ = 25°C
10
TJ = 150°C
1
0.001
0.01
0.1
1
10
80
60
40
0
100
RqJC = 0.30°C/W
25
50
75
100
TC, CASE TEMPERATURE (°C)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
100K
P(PK), PEAK TRANSIENT POWER (w)
10 ms
10
This area is limited by RDS(on)
100 ms
Single Pulse
TJ = Max Rated
RqJC = 0.30°C/W
TC = 25°C
0.1
150
125
tAV, TIME IN AVALANCHE (ms)
100
0.1
100
20
Typical performance based
on characterization data
1000
1
800
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
f = 1 MHz
VGS = 0 V
Qg, GATE CHARGE (nC)
100
ID, DRAIN CURRENT (A)
Coss
100
1
0
Ciss
1
1 ms
10 ms
100 ms
10
100
1000
5000
Single Pulse
RqJC = 0.30°C/W
TC = 25°C
10K
1K
100
0.00001
0.0001
0.001
0.01
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
175
0.1
NTHL020N090SC1
TYPICAL CHARACTERISTICS (continued)
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.01
0.001
0.02
0.01
P DM
Single Pulse
t1
t2
0.00001
0.001
0.0001
Notes:
ZqJC (t) = r(t) x RqJC
RqJC = 0.30°C/W
Peak TJ = PDM x ZqJC (t) + TC
Duty Cycle, D = t1/t2
0.01
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction−to−Ambient Transient Thermal Response Curve
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6
0.1
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
DOCUMENT NUMBER:
DESCRIPTION:
XXXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
98AON93302G
TO−247−3LD
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