NTHL080N120SC1A

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-3L V(BR)DSS RDS(on) MAX ID MAX 1200 V 110 mW @ 20 V 31 A NTHL080N120SC1A N−CHANNEL MOSFET D Features • • • • • Typ. RDS(on) = 80 mW Ultra Low Gate Charge (typ. QG(tot) = 56 nC) Low Effective Output Capacitance (typ. Coss = 80 pF) 100% UIL Tested This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) G S Typical Applications • UPS • DC−DC Converter • Boost Inverter G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Unit VDSS 1200 V VGS −15/+25 V −5/+20 V ID 31 A PD 178 W Steady TC = 100°C State ID 22 A PD 89 W TA = 25°C IDM 132 A TJ, Tstg −55 to +175 °C TC < 175°C Steady State TC = 25°C Power Dissipation RqJC Continuous Drain Current RqJC Value VGSop Recommended Operation Values of Gate−to− Source Voltage Continuous Drain Current RqJC Symbol Power Dissipation RqJC Pulsed Drain Current (Note 2) Operating Junction and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 18.5 A, L = 1 mH) (Note 3) IS 18 A EAS 171 mJ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case (Note 1) RqJC 0.84 °C/W Junction−to−Ambient (Note 1) RqJA 40 °C/W D S TO−247−3LD CASE 340CX MARKING DIAGRAM $Y&Z&3&K NTHL080 N120SC1A $Y = onsemi Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot NTHL080N120SC1A = Specific Device Code ORDERING INFORMATION Device Package Shipping NTHL080N120SC1A TO247−3L 30 Units / Tube 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Repetitive rating, limited by max junction temperature. 3. EAS of 171 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 18.5 A, VDD = 120 V, VGS = 18 V. © Semiconductor Components Industries, LLC, 2018 May, 2022 − Rev. 3 1 Publication Order Number: NTHL080N120SC1A/D NTHL080N120SC1A ELECTRICAL CHARACTERISTICS Parameter Symbol Test Conditions Min Typ Max Unit 1200 − − V ID = 1 mA, referenced to 25_C − 700 − mV/_C VGS = 0 V, VDS = 1200 V, TJ = 25_C − − 100 mA VGS = 0 V, VDS = 1200 V, TJ = 175_C − − 1 mA VGS = +25/−15 V, VDS = 0 V − − ±1 mA 1.8 2.7 4.3 V −5 − +20 V VGS = 20 V, ID = 20 A, TJ = 25_C − 80 110 mW VGS = 20 V, ID = 20 A, TJ = 150_C − 114 − VDS = 20 V, ID = 20 A − 13 − S VGS = 0 V, f = 1 MHz, VDS = 800 V − 1112 − pF OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS IGSS VGS = 0 V, ID = 1 mA ON CHARACTERISTICS Gate Threshold Voltage VGS(th) Recommended Gate Voltage VGOP Drain−to−Source On Resistance Forward Transconductance RDS(on) gFS VGS = VDS, ID = 5 mA CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS − 80 − Reverse Transfer Capacitance CRSS − 6.5 − Total Gate Charge QG(tot) − 56 − − 11 − Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Gate Resistance VGS = −5/20 V, VDS = 600 V, ID = 20 A nC − 12 − f = 1 MHz − 1.7 − W VGS = −5/20 V, VDS = 800 V, ID = 20 A, RG = 4.7 W, Inductive Load − 13 − ns − 20 − td(off) − 22 − RG SWITCHING CHARACTERISTICS Turn-On Delay Time td(on) Rise Time Turn−Off Delay Time tr Fall Time tf − 10 − Turn-On Switching Loss EON − 258 − Turn-Off Switching Loss EOFF − 52 − Total Switching Loss ETOT − 311 − mJ DRAIN−SOURCE DIODE CHARACTERISTICS ISD VGS = −5 V, TJ = 25_C − − 18 A Pulsed Drain−to−Source Diode Forward Current (Note 2) ISDM VGS = −5 V, TJ = 25_C − − 132 A Forward Diode Voltage VSD VGS = −5 V, ISD = 10 A, TJ = 25_C − 4 − V Reverse Recovery Time tRR − 16 − ns Reverse Recovery Charge QRR VGS = −5/20 V, ISD = 20 A, dIS/dt = 1000 A/ms − 62 − nC Reverse Recovery Energy EREC − 5 − mJ Peak Reverse Recovery Current IRRM − 8 − A Continuous Drain−to−Source Diode Forward Current Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NTHL080N120SC1A ID, DRAIN CURRENT (A) 70 NORMALIZED DRAIN TO SOURCE ON−RESISTANCE TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) VGS = 20 V VGS = 15 V VGS = 19 V 56 VGS = 16 V VGS = 18 V VGS = 17 V 42 PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 28 VGS = 10 V 14 VGS = 8 V 0 0 4 8 12 16 20 8 VGS = 8 V 6 VGS = 10 V 4 2 0 VGS = 15 V VGS = 16 V 0 10 20 SOURCE ON-RESISTANCE (m W) 1.4 1.2 1.0 0.8 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 oC oC 14 TJ = −55 oC 6 8 9 12 10 12 14 16 18 20 Figure 4. On−Resistance vs. Gate−to−Source Voltage VDS = 20 V 3 TJ = 25 oC VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 0 TJ = 150 oC 90 0 70 TJ = 25 70 ID = 20 A 180 Figure 3. Normalized On Resistance vs. Junction Temperature 28 60 270 0.6 −75 −50 −25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) TJ = 175 50 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 360 1.6 rDS(on), DRAIN TO NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 450 ID = 20 A VGS = 20 V 42 40 Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 2.0 0 30 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 56 VGS = 18 V VGS = 17 V VGS = 19 V VGS = 20 V VDS, DRAIN TO SOURCE VOLTAGE (V) 1.8 PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX TJ = 150 oC TJ = 25 o C 10 TJ = −55 oC 1 0.1 15 VGS = 0 V VGS, GATE TO SOURCE VOLTAGE (V) 0 2 4 6 8 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source−to−Drain Diode Forward Voltage vs. Source Current www.onsemi.com 3 NTHL080N120SC1A TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued) 10000 ID = 20 A Ciss VDD = 400 V 15 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 20 VDD = 600 V VDD = 800 V 10 5 0 1000 Coss 100 Crss 10 f = 1 MHz VGS = 0 V 0 10 20 30 40 50 1 0.1 60 1 Figure 7. Gate Charge Characteristics 800 40 RqJC = 0.84 o C/W ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 100 Figure 8. Capacitance vs. Drain−to−Source Voltage 30 TJ = 25 o C 10 TJ = 150 oC 1 0.001 0.01 0.1 1 30 VGS = 20 V 20 10 0 10 25 50 tAV, TIME IN AVALANCHE (ms) 100 125 150 175 Figure 10. Maximum Continuous Drain Current vs. Case Temperature 1000 P(PK), PEAK TRANSIENT POWER (W) 50000 100 10 m s 10 THIS AREA IS LIMITED BY rDS(on) 1 100 m s SINGLE PULSE TJ = MAX RATED 0.1 0.01 75 TC, CASE TEMPERATURE ( o C) Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 1 ms 10 ms RqJC = 0.84 oC/W 100 ms TC = 25 oC 0.1 1 10 100 1000 5000 SINGLE PULSE RqJC = 0.84 oC/W TC = 25 oC 10000 1000 100 0.00001 0.0001 0.001 0.01 0.1 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 4 NTHL080N120SC1A r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued) 2 1 0.1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: 0.01 ZqJC(t) = r(t) x RqJC RqJC = 0.84 oC/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction−to−Case Transient Thermal Response Curve www.onsemi.com 5 0.1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CX ISSUE A DATE 06 JUL 2020 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG DOCUMENT NUMBER: DESCRIPTION: XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 98AON93302G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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