NTHL099N60S5

DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel, SUPERFET) V, Easy Drive, TO247-3L VDSS RDS(ON) MAX ID MAX 600 V 99 mW @ 10 V 33 A D 600 V, 99 mW, 33 A NTHL099N60S5 Description SUPERFET V MOSFET Easy Drive series combines excellent switching performance without sacrificing ease of use and EMI issues for both hard and soft switching topologies. G S Features • • • • 650 V @ TJ = 150°C Typ. RDS(on) = 79.2 mW 100% Avalanche Tested Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications G • Telecom / Server Power Supplies • EV Charger / UPS / Solar / Industrial Power Supplies Parameter Gate−to−Source Voltage DC Symbol Value Unit VDSS 600 V VGSS ±30 V AC (f > 1 Hz) Continuous Drain Current TC = 25°C ID A 33* TC = 25°C PD 184 W Pulsed Drain Current (Note 1) TC = 25°C IDM 95* A Pulsed Source Current (Body Diode) (Note 1) TC = 25°C ISM 95* A TJ, TSTG −55 to +150 °C IS 33* A EAS 232 mJ Avalanche Current IAS 5.1 A Repetitive Avalanche Energy (Note 1) EAR 1.84 mJ MOSFET dv/dt dv/dt 120 V/ns Single Pulse Avalanche Energy IL = 5.1 A, RG = 25 W Peak Diode Recovery dv/dt (Note 2) Lead Temperature for Soldering Purposes (1/8″ from case for 10 seconds) T099N 60S5 AYWWZZ 20* Power Dissipation Source Current (Body Diode) MARKING DIAGRAM ±30 TC = 100°C Operating Junction and Storage Temperature Range S TO−247 Long Leads CASE 340CX ABSOLUTE MAXIMUM RATINGS (TJ = 25°C, Unless otherwise noted) Drain−to−Source Voltage D T099N60S5 A YWW ZZ = Specific Device Code = Assembly Location = Data Code (Year & Week) = Assembly Lot ORDERING INFORMATION Device NTHL099N60S5 Package Shipping TO−247 30 Units / Tube 50 TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Drain current limited by maximum junction temperature. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. ISD ≤ 13.5 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. © Semiconductor Components Industries, LLC, 2021 August, 2021 − Rev. 2 1 Publication Order Number: NTHL099N60S5/D NTHL099N60S5 THERMAL CHARACTERISTICS Parameter Symbol Value Unit Thermal Resistance, Junction−to−Case, Max. RqJC 0.68 °C/W Thermal Resistance, Junction−to−Ambient, Max. RqJA 40 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 1 mA, TJ = 25_C 600 − − V Drain−to−Source Breakdown Voltage Temperature Coefficient DV(BR)DSS/ DTJ ID = 10 mA, Referenced to 25_C − 630 − mV/_C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 600 V, TJ = 25_C − − 1 mA Gate−to−Source Leakage Current IGSS VGS = ±30 V, VDS = 0 V − − ±100 nA Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 13.5 A, TJ = 25_C − 79.2 99 mW Gate Threshold Voltage VGS(th) VGS = VDS, ID = 2.8 mA, TJ = 25_C 2.4 − 4.0 V gFS VDS = 20 V, ID = 13.5 A − 26 − S VDS = 400 V, VGS = 0 V, f = 250 kHz − 2500 − pF OFF CHARACTERISTICS ON CHARACTERISTICS Forward Trans−conductance CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance CISS − 41 − Time Related Output Capacitance COSS(tr.) ID = Constant, VDS = 0 V to 400 V, VGS = 0 V − 642 − Energy Related Output Capacitance COSS(er.) VDS = 0 V to 400 V, VGS = 0 V − 70 − QG(tot) VDD = 400 V, ID = 13.5 A, VGS = 10 V Total Gate Charge COSS − 48 − Gate−to−Source Charge QGS − 12 − Gate−to−Drain Charge QGD − 14 − Gate Resistance nC RG f = 1 MHz − 6.9 − W td(on) VGS = 0/10 V, VDD = 400 V, ID = 13.5 A, RG = 4.7 W − 26 − ns SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time − 17 − td(off) tr − 92 − tf − 4.2 − SOURCE-TO−DRAIN DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, ISD = 13.5 A, TJ = 25_C − − 1.2 V Reverse Recovery Time tRR − 310 − ns Reverse Recovery Charge QRR VGS = 0 V, ISD = 13.5 A, dI/dt = 100 A/ms, VDD = 400 V − 4627 − nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NTHL099N60S5 TYPICAL CHARACTERISTICS 7.0 V VGS = 10 V 100 6.0 V VDS = 20 V 50 40 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 60 TC = 25°C 30 5.0 V 20 4.5 V 10 10 TC = 25°C 4.0 V 5 0 0.20 6 IS, SOURCE CURRENT (A) VGS = 0 V 0.05 10 20 30 40 50 10 1 0.1 60 TC = 25°C TC = 150°C 0 TC = −55°C 0.4 0.2 0.8 0.6 1.0 ID, DRAIN CURRENT (A) VSD, DIODE FORWARD VOLTAGE (V) Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Diode Forward Voltage vs. Source Current VGS = 0 V f = 250 kHz CISS = CGS + CGD (CDS = shorted) COSS = CDS + CGD CRSS = CGD 104 CISS 103 102 COSS 101 CRSS 100 0 5 100 VGS = 20 V 10−1 4 Figure 2. Transfer Characteristics 0.10 105 3 Figure 1. On−Region Characteristics VGS = 10 V 0 2 TC = −55°C VGS, GATE−TO−SOURCE VOLTAGE (V) 0.15 0 TC = 150°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) TC = 25°C 106 CAPACITANCE (pF) 20 15 10 1 100 200 300 400 500 600 VGS, GATE−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE ON−RESISTANCE (W) 0 10 ID = 13.5 A VDS = 130 V 8 VDS = 400 V 6 4 2 0 0 10 20 30 40 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 3 1.2 50 NTHL099N60S5 1.2 3.0 VGS = 0 V ID = 10 mA RDS(on), DRAIN−TO−SOURCE ON−RESISTANCE (Normalized) BVDSS, DRAIN−TO−SOURCE BREAKDOWN VOLTAGE (Normalized) TYPICAL CHARACTERISTICS 1.1 1.0 0.9 0.8 −75 −50 −25 0 25 50 75 VGS = 10 V ID = 13.5 A 2.5 2.0 1.5 1.0 0.5 0 −75 −50 −25 100 125 150 175 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On−Resistance Variation vs. Temperature 35 1000 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 30 100 10 ms 100 ms 10 1 0.1 1 ms Operation in this Area is Limited by RDS(on) TC = 25°C TJ = 150°C Single Pulse 10 1 10 ms 20 15 10 5 DC 0 1000 100 25 25 EOSS (mJ) 100 125 TC, CASE TEMPERATURE (°C) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 8 6 4 2 0 75 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 10 0 50 100 200 300 400 500 600 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. EOSS vs. Drain−to−Source Voltage www.onsemi.com 4 150 NTHL099N60S5 TYPICAL CHARACTERISTICS ZqJC(t), EFFECTIVE TRANSIENT THERMAL IMPEDANCE (°C/W) 1 D = 0.5 D = 0.2 0.1 D = 0.1 D = 0.05 Notes: ZqJC(t) = 0.68°C/W Max Duty Cycle, D = t1/t2 TJM = PDM x ZqJC(t) + TC D = 0.02 D = 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 t, RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Impedance www.onsemi.com 5 0.1 1 NTHL099N60S5 VGS RL Qg VDD VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr tf td(off) ton toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 6 Time NTHL099N60S5 + DUT VSD − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC or its subsidiaries in the United States and/or other countries. www.onsemi.com 7 NTHL099N60S5 PACKAGE DIMENSIONS TO−247−3LD CASE 340CX ISSUE A www.onsemi.com 8 NTHL099N60S5 onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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