DATA SHEET
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MOSFET - Power, Single
N-Channel, SUPERFET) V,
Easy Drive, TO247-3L
VDSS
RDS(ON) MAX
ID MAX
600 V
99 mW @ 10 V
33 A
D
600 V, 99 mW, 33 A
NTHL099N60S5
Description
SUPERFET V MOSFET Easy Drive series combines excellent
switching performance without sacrificing ease of use and EMI issues
for both hard and soft switching topologies.
G
S
Features
•
•
•
•
650 V @ TJ = 150°C
Typ. RDS(on) = 79.2 mW
100% Avalanche Tested
Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Applications
G
• Telecom / Server Power Supplies
• EV Charger / UPS / Solar / Industrial Power Supplies
Parameter
Gate−to−Source Voltage
DC
Symbol
Value
Unit
VDSS
600
V
VGSS
±30
V
AC (f > 1 Hz)
Continuous Drain Current
TC = 25°C
ID
A
33*
TC = 25°C
PD
184
W
Pulsed Drain Current (Note 1)
TC = 25°C
IDM
95*
A
Pulsed Source Current
(Body Diode) (Note 1)
TC = 25°C
ISM
95*
A
TJ, TSTG
−55 to
+150
°C
IS
33*
A
EAS
232
mJ
Avalanche Current
IAS
5.1
A
Repetitive Avalanche Energy (Note 1)
EAR
1.84
mJ
MOSFET dv/dt
dv/dt
120
V/ns
Single Pulse Avalanche
Energy
IL = 5.1 A,
RG = 25 W
Peak Diode Recovery dv/dt (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 seconds)
T099N
60S5
AYWWZZ
20*
Power Dissipation
Source Current (Body Diode)
MARKING DIAGRAM
±30
TC = 100°C
Operating Junction and Storage Temperature
Range
S
TO−247 Long Leads
CASE 340CX
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C, Unless otherwise noted)
Drain−to−Source Voltage
D
T099N60S5
A
YWW
ZZ
= Specific Device Code
= Assembly Location
= Data Code (Year & Week)
= Assembly Lot
ORDERING INFORMATION
Device
NTHL099N60S5
Package
Shipping
TO−247
30 Units / Tube
50
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. ISD ≤ 13.5 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C.
© Semiconductor Components Industries, LLC, 2021
August, 2021 − Rev. 2
1
Publication Order Number:
NTHL099N60S5/D
NTHL099N60S5
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction−to−Case, Max.
RqJC
0.68
°C/W
Thermal Resistance, Junction−to−Ambient, Max.
RqJA
40
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 1 mA, TJ = 25_C
600
−
−
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
DV(BR)DSS/
DTJ
ID = 10 mA, Referenced to 25_C
−
630
−
mV/_C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = 600 V, TJ = 25_C
−
−
1
mA
Gate−to−Source Leakage Current
IGSS
VGS = ±30 V, VDS = 0 V
−
−
±100
nA
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V, ID = 13.5 A, TJ = 25_C
−
79.2
99
mW
Gate Threshold Voltage
VGS(th)
VGS = VDS, ID = 2.8 mA, TJ = 25_C
2.4
−
4.0
V
gFS
VDS = 20 V, ID = 13.5 A
−
26
−
S
VDS = 400 V, VGS = 0 V, f = 250 kHz
−
2500
−
pF
OFF CHARACTERISTICS
ON CHARACTERISTICS
Forward Trans−conductance
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
CISS
−
41
−
Time Related Output Capacitance
COSS(tr.)
ID = Constant, VDS = 0 V to 400 V,
VGS = 0 V
−
642
−
Energy Related Output Capacitance
COSS(er.)
VDS = 0 V to 400 V, VGS = 0 V
−
70
−
QG(tot)
VDD = 400 V, ID = 13.5 A, VGS = 10 V
Total Gate Charge
COSS
−
48
−
Gate−to−Source Charge
QGS
−
12
−
Gate−to−Drain Charge
QGD
−
14
−
Gate Resistance
nC
RG
f = 1 MHz
−
6.9
−
W
td(on)
VGS = 0/10 V, VDD = 400 V,
ID = 13.5 A, RG = 4.7 W
−
26
−
ns
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
−
17
−
td(off)
tr
−
92
−
tf
−
4.2
−
SOURCE-TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V, ISD = 13.5 A, TJ = 25_C
−
−
1.2
V
Reverse Recovery Time
tRR
−
310
−
ns
Reverse Recovery Charge
QRR
VGS = 0 V, ISD = 13.5 A,
dI/dt = 100 A/ms, VDD = 400 V
−
4627
−
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NTHL099N60S5
TYPICAL CHARACTERISTICS
7.0 V
VGS = 10 V
100
6.0 V
VDS = 20 V
50
40
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
60
TC = 25°C
30
5.0 V
20
4.5 V
10
10
TC = 25°C
4.0 V
5
0
0.20
6
IS, SOURCE CURRENT (A)
VGS = 0 V
0.05
10
20
30
40
50
10
1
0.1
60
TC = 25°C
TC = 150°C
0
TC = −55°C
0.4
0.2
0.8
0.6
1.0
ID, DRAIN CURRENT (A)
VSD, DIODE FORWARD VOLTAGE (V)
Figure 3. On−Resistance Variation vs. Drain
Current and Gate Voltage
Figure 4. Diode Forward Voltage vs. Source
Current
VGS = 0 V
f = 250 kHz
CISS = CGS + CGD (CDS = shorted)
COSS = CDS + CGD
CRSS = CGD
104
CISS
103
102
COSS
101
CRSS
100
0
5
100
VGS = 20 V
10−1
4
Figure 2. Transfer Characteristics
0.10
105
3
Figure 1. On−Region Characteristics
VGS = 10 V
0
2
TC = −55°C
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.15
0
TC = 150°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TC = 25°C
106
CAPACITANCE (pF)
20
15
10
1
100
200
300
400
500
600
VGS, GATE−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE ON−RESISTANCE (W)
0
10
ID = 13.5 A
VDS = 130 V
8
VDS = 400 V
6
4
2
0
0
10
20
30
40
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3
1.2
50
NTHL099N60S5
1.2
3.0
VGS = 0 V
ID = 10 mA
RDS(on), DRAIN−TO−SOURCE
ON−RESISTANCE (Normalized)
BVDSS, DRAIN−TO−SOURCE
BREAKDOWN VOLTAGE (Normalized)
TYPICAL CHARACTERISTICS
1.1
1.0
0.9
0.8
−75 −50 −25
0
25
50
75
VGS = 10 V
ID = 13.5 A
2.5
2.0
1.5
1.0
0.5
0
−75 −50 −25
100 125 150 175
0
25
50
75
100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation vs.
Temperature
Figure 8. On−Resistance Variation vs.
Temperature
35
1000
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
30
100
10 ms
100 ms
10
1
0.1
1 ms
Operation in this Area is
Limited by RDS(on)
TC = 25°C
TJ = 150°C
Single Pulse
10
1
10 ms
20
15
10
5
DC
0
1000
100
25
25
EOSS (mJ)
100
125
TC, CASE TEMPERATURE (°C)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
8
6
4
2
0
75
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
10
0
50
100
200
300
400
500
600
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. EOSS vs. Drain−to−Source Voltage
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4
150
NTHL099N60S5
TYPICAL CHARACTERISTICS
ZqJC(t), EFFECTIVE TRANSIENT
THERMAL IMPEDANCE (°C/W)
1
D = 0.5
D = 0.2
0.1
D = 0.1
D = 0.05
Notes:
ZqJC(t) = 0.68°C/W Max
Duty Cycle, D = t1/t2
TJM = PDM x ZqJC(t) + TC
D = 0.02
D = 0.01
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Impedance
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5
0.1
1
NTHL099N60S5
VGS
RL
Qg
VDD
VGS
Qgs
Qgd
DUT
IG = Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
RL
VDS
VDS
90%
90%
90%
VDD
VGS
RG
VGS
DUT
VGS
10%
td(on)
10%
tr
tf
td(off)
ton
toff
Figure 14. Resistive Switching Test Circuit & Waveforms
L
E AS + 1 @ LI AS
2
VDS
BVDSS
ID
IAS
RG
VDD
DUT
VGS
2
ID(t)
VDD
VDS(t)
tp
tp
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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6
Time
NTHL099N60S5
+
DUT
VSD
−
ISD
L
Driver
RG
Same Type
as DUT
VGS
− dv/dt controlled by RG
− ISD controlled by pulse period
D+
VGS
(Driver)
VDD
Gate Pulse Width
Gate Pulse Period
10 V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(DUT)
VDD
VSD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC or its subsidiaries in the United States and/or other countries.
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7
NTHL099N60S5
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
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8
NTHL099N60S5
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