NTK3139P

NTK3139P Power MOSFET −20 V, −780 mA, Single P−Channel with ESD Protection, SOT−723 Features • • • • • http://onsemi.com V(BR)DSS RDS(on) TYP 0.38 W @ −4.5 V −20 V 0.52 W @ −2.5 V 0.70 W @ −1.8 V 0.95 W @ −1.5 V ID Max −780 mA −660 mA −100 mA −100 mA P−channel Switch with Low RDS(on) 44% Smaller Footprint and 38% Thinner than SC−89 Low Threshold Levels Allowing 1.5 V RDS(on) Rating Operated at Low Logic Level Gate Drive These are Pb−Free Devices Applications • Load/Power Switching • Interfacing, Logic Switching • Battery Management for Ultra Small Portable Electronics MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State tv5s Power Dissipation (Note 1) Steady State tv5s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current tp = 10 ms Steady State TA = 25°C TA = 85°C TA = 25°C PD IDM TJ, TSTG TL ID TA = 25°C TA = 85°C TA = 25°C TA = 25°C PD Symbol VDSS VGS ID Value −20 ±6 −780 −570 −870 450 550 −660 −480 310 −1.2 −55 to 150 260 mW A °C °C mA mW Unit V V mA SOT−723 (3−LEAD) 3 1 Top View 2 1 − Gate 2 − Source 3 − Drain MARKING DIAGRAM KD M SOT−723 CASE 631AA STYLE 5 1 KD = Specific Device Code M = Date Code Operating Junction and Storage Temperature Lead Temperature for Soldering Purposes (1/8” from case for 10 s) ORDERING INFORMATION Device NTK3139PT1G NTK3139PT5G Package SOT−723* SOT−723* Shipping † 4000 / Tape & Reel 8000 / Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 2. Surface mounted on FR4 board using the minimum recommended pad size †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *These packages are inherently Pb−Free. © Semiconductor Components Industries, LLC, 2006 1 December, 2006 − Rev. 0 Publication Order Number: NTK3139P/D NTK3139P THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – t = 5 s (Note 3) Junction−to−Ambient – Steady State Minimum Pad (Note 4) Symbol RqJA RqJA RqJA Max 280 228 400 Unit °C/W 3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 4. Surface mounted on FR4 board using the minimum recommended pad size MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS = 0 V, ID = −250 mA ID = −250 mA, Reference to 25°C VGS = 0 V, VDS = −16V TJ = 25°C TJ = 125°C −20 −16.5 −1.0 −2.0 ±2.0 V mV/°C mA mA Symbol Test Condition Min Typ Max Unit Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance IGSS VDS = 0 V, VGS = ±4.5 V VGS(TH) VGS(TH)/TJ VGS = VDS, ID = −250 mA −0.45 2.4 −1.2 V mV/°C VGS = −4.5 V, ID = −780 mA RDS(on) VGS = −2.5 V, ID = −660 mA VGS = −1.8 V, ID = −100 mA VGS = −1.5 V, ID = −100 mA 0.38 0.52 0.70 0.95 1.2 0.48 0.67 0.95 2.20 S W Forward Transconductance gFS VDS = −10 V, ID = −540 mA CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VGS = 0 V, f = 1 MHz, VDS = −16 V 113 15 9.0 170 25 15 pF SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) Turn On Delay Time Rise Time TurnOff Delay Time Fall Time td(ON) tr td(OFF) tf VGS = −4.5 V, VDS = −10 V, ID = −200 mA, RG = 10 W 9.0 5.8 32.7 20.3 ns DRAIN SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD tRR ta tb QRR VGS = 0 V, dISD/dt = 100 A/ms, IS = −1.0 A, VDD = −20 V VGS = 0 V, IS = −350 mA TJ = 25°C −0.8 13.2 11.8 1.4 5.0 nC −1.2 V ns 5. Pulse Test: pulse width = 300 ms, duty cycle = 2% 6. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 NTK3139P TYPICAL CHARACTERISTICS 2.0 VGS = −4.5 V to −2.5 V −ID, DRAIN CURRENT (A) 1.5 −ID, DRAIN CURRENT (A) −2.2 V TJ = 25°C 1.5 1.2 0.9 TJ = 25°C 0.6 TJ = 125°C 0.3 TJ = −55°C 0 6 0.75 1.25 1.75 2.25 −VGS, GATE−TO−SOURCE VOLTAGE (V) 1.8 VDS ≥ −5 V −2.0 V 1.0 −1.8 V −1.6 V −1.5 V −1.4 V 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0.5 0 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 3.0 2.5 2.0 1.5 1.0 0.5 0 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 −VGS, GATE VOLTAGE (V) ID = −0.78 A TJ = 25°C RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.8 Figure 2. Transfer Characteristics TJ = 25°C 0.7 VGS = −2.5 V 0.6 0.5 0.4 0.3 0.2 0.4 0.7 0.9 1.2 1.4 1.7 1.9 −ID, DRAIN CURRENT (A) VGS = −4.5 V Figure 3. On−Resistance vs. Gate−to−Source Voltage RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 1.2 VGS = −1.5 V, ID = −100 mA VGS = −1.8 V, ID = −100 mA 0.8 VGS = −2.5 V, ID = −550 mA 0.6 −IDSS, LEAKAGE (nA) 1.0 10,000 Figure 4. On−Resistance vs. Drain Current and Gate Voltage VGS = 0 V 1000 TJ = 150°C TJ = 125°C 100 0.4 VGS = −4.5 V, ID = −630 mA 0.2 −60 −35 10 −10 15 40 65 90 115 140 5.0 10 15 20 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 NTK3139P TYPICAL CHARACTERISTICS 150 Ciss C, CAPACITANCE (pF) 120 t, TIME (ns) VGS = 0 V TJ = 25°C 100 VDD = −10 V ID = −200 mA VGS = −4.5 V td(off) 90 tf 10 td(on) tr 60 30 0 0 Crss 2 Coss 1 4 6 8 10 12 14 16 18 20 1 10 RG, GATE RESISTANCE (W) 100 −DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 2.0 −IS, SOURCE CURRENT (A) VGS = 0 V 1.5 125°C Figure 8. Resistive Switching Time Variation vs. Gate Resistance 150°C 25°C 1.0 TJ = −55°C 0.5 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current http://onsemi.com 4 NTK3139P PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D b1 −Y− 3 A E 1 2 L C HE DIM A b b1 C D E e HE L e b 2X 0.08 (0.0032) X Y MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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