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NTMFS015N10MCLT1G

NTMFS015N10MCLT1G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    DFN-5

  • 描述:

    NTMFS015N10MCLT1G

  • 数据手册
  • 价格&库存
NTMFS015N10MCLT1G 数据手册
MOSFET - Power, Single N-Channel 100 V, 12.2 mW, 54 A NTMFS015N10MCL Features • • • • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Primary DC−DC MOSFET Synchronous Rectifier in DC−DC and AC−DC Motor Drive These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 12.2 mW @ 10 V 100 V 54 A 18.3 mW @ 4.5 V D (5,6) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Voltage VGS ±20 V ID 54 A Parameter Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1, 2) Pulsed Drain Current Steady State Steady State TC = 100°C G (4) S (1,2,3) N−CHANNEL MOSFET 38 TC = 25°C PD 79 W TA = 25°C ID 10.5 A MARKING DIAGRAM D TA = 25°C TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Range PD 3.0 W IDM 423 A TJ, Tstg −55 to +175 °C Single Pulse Drain−to−Source Avalanche Energy (L = 3 mH, IAS = 6 A) EAS 54 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RqJC 1.9 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 50 1 DFN5 CASE 488AA STYLE 1 S S S G D XXXXXX AYWZZ D D XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 3 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2018 April, 2020 − Rev. 2 1 Publication Order Number: NTMFS015N10MCL/D NTMFS015N10MCL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 100 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 60 VGS = 0 V, VDS = 100 V mV/°C TJ = 25 °C 1.0 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 77 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient 1 VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.5 3 −5.0 VGS = 10 V ID = 14 A 9.7 12.2 VGS = 4.5 V ID = 11 A 13.3 18.3 gFS VDS =5 V, ID = 14 A V mV/°C 51 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Gate Resistance 1338 521 VGS = 0 V, f = 1 MHz, VDS = 50 V pF 9.0 RG 0.1 0.5 3 W Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 50 V; ID = 14 A 9.0 nC Total Gate Charge QG(TOT) VGS = 10 V, VDS = 50 V; ID = 14 A 19 nC Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Plateau Voltage VGP Output Charge QOSS Total Gate Charge Sync QSYNC 2.0 VGS = 10 V, VDS = 50 V; ID = 14 A 3.0 nC 3.0 2.7 V VGS = 0 V, VDS = 50 V 35 nC VGS = 0 to 10 V, VDS = 0 V 17 nC SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 9.0 VGS = 10 V, VDS = 50 V, ID = 14 A, RG = 6.0 W tf 10 ns 25 5.0 DRAIN−SOURCE DIODE CHARACTERISTICS Source to Drain Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Reverse Recovery Time trr Reverse Recovery Charge Qrr VGS = 0 V, IS = 2 A (Note 7) 0.7 1.2 VGS = 0 V, IS = 14 A (Note 7) 0.83 1.3 IF = 7 A, di/dt = 300 A/ms IF = 7 A, di/dt = 1000 A/ms V 20 ns 33 nC 14 ns 76 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFS015N10MCL NOTES: 6. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. RqCA is determined by the user’s board design. a) 50°C/W when mounted on a 1 in2 pad of 2 oz copper. b) 125°C/W when mounted on a minimum pad of 2 oz copper. G SS SF DS DF SS SF DS DF G 7. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%. 8. EAS of 54 mJ is based on starting TJ = 25_C; L = 3 mH, IAS = 6 A, VDD = 100 V, VGS = 10 V. 9. Pulsed ID please refer to Figure 11 SOA graph for more details. 10. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro−mechanical application board design. DEVICE ORDERING INFORMATION Device NTMFS015N10MCLT1G Marking Package Shipping† 015L10 DFN5 (Pb−Free) 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 3 NTMFS015N10MCL TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) ID, DRAIN CURRENT (A) VGS = 10 V VGS = 6 V VGS = 8 V VGS = 4.5 V 100 VGS = 3.5 V 50 VGS = 3 V Pulse Duration = 80 ms Duty Cycle = 0.5% Max 0 0 1 2 3 4 3.0 NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 150 VGS = 3 V VGS = 3.5 V 2.5 2.0 VGS = 8 V 1.5 1.0 5 VGS = 10 V 50 0 150 Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 2.4 150 ID = 14 A VGS = 10 V 2.2 rDS(on), DRAIN TO 2.0 1.8 1.6 1.4 1.2 1.0 0.8 SOURCE ON−RESISTANCE (mW) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 100 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics ID = 14 A Pulse Duration = 80 ms Duty Cycle = 0.5% Max 100 0.6 −75 −50 −25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE ( oC) 50 TJ = 150 oC 0 TJ = 25 oC 1 150 IS, REVERSE DRAIN CURRENT (A) Pulse Duration = 80 ms Duty Cycle = 0.5% Max 100 50 TJ = 25 oC 1 175 oC TJ = −55oC 2 3 4 3 4 5 6 7 8 9 10 Figure 4. On-Resistance vs. Gate to Source Voltage VDS = 5 V TJ = 2 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs. Junction Temperature ID, DRAIN CURRENT (A) VGS = 6 V Pulse Duration = 80 ms Duty Cycle = 0.5% Max VDS, DRAIN TO SOURCE VOLTAGE (V) 0 VGS = 4.5 V 100 10 1 TJ = 175 oC 0.1 TJ = 25 oC 0.01 0.001 0.0 5 VGS = 0 V TJ = −55oC 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current www.onsemi.com 4 1.2 NTMFS015N10MCL TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 10000 ID = 14 A Ciss 8 VDD = 25 V 6 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 50 V 4 VDD = 75 V 1000 Coss 100 Crss 10 2 0 f = 1 MHz VGS = 0 V 5 0 10 15 1 0.1 20 1 Figure 7. Gate Charge Characteristics 60 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 100 Figure 8. Capacitance vs. Drain to Source Voltage 100 TJ = 25 oC 10 TJ = 100 oC TJ = 150 oC 50 VGS = 10 V 40 30 VGS = 4.5 V 20 10 o RqJC = 1.9 C/W 1 0.001 0.01 0.1 1 0 25 10 50 10 m s 100 m s 1 ms 1 CURVE BENT TO MEASURED DATA 0.1 1 150 175 10000 SINGLE PULSE RqJC = 1.9 oC/W TC = 25 oC 10 0.1 125 Figure 10. Maximum Continuous Drain Current vs. Case Temperature P(PK), PEAK TRANSIENT POWER (W) 100 100 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 1000 75 o tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 100 ms/DC 10 10 ms 100 200 SINGLE PULSE RqJC = 1.9 oC/W TC = 25 oC 1000 100 10 0.00001 0.0001 0.001 0.01 0.1 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 1 NTMFS015N10MCL TYPICAL CHARACTERISTICS (continued) Z q JC, EFFECTIVE TRANSIENT THERMAL RESISTANCE ( 5 C/W) 10 1 0.1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 PDM t1 0.01 t2 SINGLE PULSE NOTES: 0.01 0.001 ZqJC(t) = r(t) x RqJC RqJC = 1.9 oC/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 0.00001 0.0001 0.001 0.01 0.1 t, PULSE TIME (s) Figure 13. Junction−to−Case Transient Thermal Response Curve www.onsemi.com 6 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative
NTMFS015N10MCLT1G 价格&库存

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NTMFS015N10MCLT1G
  •  国内价格
  • 380+7.15431
  • 750+6.93979

库存:1480