MOSFET - Power, Single
N-Channel
100 V, 12.2 mW, 54 A
NTMFS015N10MCL
Features
•
•
•
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
Primary DC−DC MOSFET
Synchronous Rectifier in DC−DC and AC−DC
Motor Drive
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(ON) MAX
ID MAX
12.2 mW @ 10 V
100 V
54 A
18.3 mW @ 4.5 V
D (5,6)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
100
V
Gate−to−Source Voltage
VGS
±20
V
ID
54
A
Parameter
Continuous Drain
Current RqJC
(Notes 1, 3)
TC = 25°C
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Power Dissipation
RqJA (Notes 1, 2)
Pulsed Drain Current
Steady
State
Steady
State
TC = 100°C
G (4)
S (1,2,3)
N−CHANNEL MOSFET
38
TC = 25°C
PD
79
W
TA = 25°C
ID
10.5
A
MARKING
DIAGRAM
D
TA = 25°C
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Range
PD
3.0
W
IDM
423
A
TJ, Tstg
−55 to
+175
°C
Single Pulse Drain−to−Source Avalanche
Energy (L = 3 mH, IAS = 6 A)
EAS
54
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State
RqJC
1.9
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
50
1
DFN5
CASE 488AA
STYLE 1
S
S
S
G
D
XXXXXX
AYWZZ
D
D
XXXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 3 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2018
April, 2020 − Rev. 2
1
Publication Order Number:
NTMFS015N10MCL/D
NTMFS015N10MCL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
100
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
60
VGS = 0 V,
VDS = 100 V
mV/°C
TJ = 25 °C
1.0
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 77 mA
100
mA
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
1
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
1.5
3
−5.0
VGS = 10 V
ID = 14 A
9.7
12.2
VGS = 4.5 V
ID = 11 A
13.3
18.3
gFS
VDS =5 V, ID = 14 A
V
mV/°C
51
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Gate Resistance
1338
521
VGS = 0 V, f = 1 MHz, VDS = 50 V
pF
9.0
RG
0.1
0.5
3
W
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 50 V; ID = 14 A
9.0
nC
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 50 V; ID = 14 A
19
nC
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
Output Charge
QOSS
Total Gate Charge Sync
QSYNC
2.0
VGS = 10 V, VDS = 50 V; ID = 14 A
3.0
nC
3.0
2.7
V
VGS = 0 V, VDS = 50 V
35
nC
VGS = 0 to 10 V, VDS = 0 V
17
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
9.0
VGS = 10 V, VDS = 50 V,
ID = 14 A, RG = 6.0 W
tf
10
ns
25
5.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Source to Drain Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
VGS = 0 V, IS = 2 A
(Note 7)
0.7
1.2
VGS = 0 V, IS = 14 A
(Note 7)
0.83
1.3
IF = 7 A, di/dt = 300 A/ms
IF = 7 A, di/dt = 1000 A/ms
V
20
ns
33
nC
14
ns
76
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS015N10MCL
NOTES:
6. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. RqCA is determined
by the user’s board design.
a) 50°C/W when mounted on
a 1 in2 pad of 2 oz copper.
b) 125°C/W when mounted on
a minimum pad of 2 oz copper.
G
SS
SF
DS
DF
SS
SF
DS
DF
G
7. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
8. EAS of 54 mJ is based on starting TJ = 25_C; L = 3 mH, IAS = 6 A, VDD = 100 V, VGS = 10 V.
9. Pulsed ID please refer to Figure 11 SOA graph for more details.
10. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal
& electro−mechanical application board design.
DEVICE ORDERING INFORMATION
Device
NTMFS015N10MCLT1G
Marking
Package
Shipping†
015L10
DFN5
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
NTMFS015N10MCL
TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
ID, DRAIN CURRENT (A)
VGS = 10 V
VGS = 6 V
VGS = 8 V
VGS = 4.5 V
100
VGS = 3.5 V
50
VGS = 3 V
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
0
0
1
2
3
4
3.0
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
150
VGS = 3 V VGS = 3.5 V
2.5
2.0
VGS = 8 V
1.5
1.0
5
VGS = 10 V
50
0
150
Figure 2. Normalized On−Resistance
vs. Drain Current and Gate Voltage
2.4
150
ID = 14 A
VGS = 10 V
2.2
rDS(on), DRAIN TO
2.0
1.8
1.6
1.4
1.2
1.0
0.8
SOURCE ON−RESISTANCE (mW)
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
100
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
ID = 14 A
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
100
0.6
−75 −50 −25 0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ( oC)
50
TJ = 150 oC
0
TJ = 25 oC
1
150
IS, REVERSE DRAIN CURRENT (A)
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
100
50
TJ = 25 oC
1
175 oC
TJ = −55oC
2
3
4
3
4
5
6
7
8
9
10
Figure 4. On-Resistance
vs. Gate to Source Voltage
VDS = 5 V
TJ =
2
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
ID, DRAIN CURRENT (A)
VGS = 6 V
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
VDS, DRAIN TO SOURCE VOLTAGE (V)
0
VGS = 4.5 V
100
10
1
TJ = 175 oC
0.1
TJ = 25 oC
0.01
0.001
0.0
5
VGS = 0 V
TJ = −55oC
0.2
0.4
0.6
0.8
1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
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4
1.2
NTMFS015N10MCL
TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
10000
ID = 14 A
Ciss
8
VDD = 25 V
6
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 50 V
4
VDD = 75 V
1000
Coss
100
Crss
10
2
0
f = 1 MHz
VGS = 0 V
5
0
10
15
1
0.1
20
1
Figure 7. Gate Charge Characteristics
60
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
100
Figure 8. Capacitance vs. Drain
to Source Voltage
100
TJ = 25 oC
10
TJ = 100
oC
TJ = 150 oC
50
VGS = 10 V
40
30
VGS = 4.5 V
20
10
o
RqJC = 1.9 C/W
1
0.001
0.01
0.1
1
0
25
10
50
10 m s
100 m s
1 ms
1
CURVE BENT TO
MEASURED DATA
0.1
1
150
175
10000
SINGLE PULSE
RqJC = 1.9 oC/W
TC = 25 oC
10
0.1
125
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
P(PK), PEAK TRANSIENT POWER (W)
100
100
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
1000
75
o
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
100 ms/DC
10
10 ms
100 200
SINGLE PULSE
RqJC = 1.9 oC/W
TC = 25 oC
1000
100
10
0.00001
0.0001
0.001
0.01
0.1
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
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5
1
NTMFS015N10MCL
TYPICAL CHARACTERISTICS (continued)
Z q JC, EFFECTIVE TRANSIENT
THERMAL RESISTANCE ( 5 C/W)
10
1
0.1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
PDM
t1
0.01
t2
SINGLE PULSE
NOTES:
0.01
0.001
ZqJC(t) = r(t) x RqJC
RqJC = 1.9 oC/W
Peak TJ = PDM x ZqJC(t) + TC
Duty Cycle, D = t1 / t2
0.00001
0.0001
0.001
0.01
0.1
t, PULSE TIME (s)
Figure 13. Junction−to−Case Transient Thermal Response Curve
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6
1
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
DATE 25 JUN 2018
SCALE 2:1
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
2
q
E
c
1
2
3
A1
4
TOP VIEW
C
DETAIL A
0.10 C
SEATING
PLANE
A
0.10 C
SIDE VIEW
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.15
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.30
6.15
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
GENERIC
MARKING DIAGRAM*
DETAIL A
1
0.10
b
C A B
0.05
c
8X
XXXXXX
AYWZZ
e/2
e
L
1
4
K
RECOMMENDED
SOLDERING FOOTPRINT*
E2
PIN 5
(EXPOSED PAD)
L1
M
2X
0.495
4.560
2X
1.530
G
D2
2X
BOTTOM VIEW
XXXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
0.475
3.200
4.530
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
1.330
STYLE 2:
2X
PIN 1. ANODE
0.905
2. ANODE
3. ANODE
4. NO CONNECT
0.965
5. CATHODE
1
4X
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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