NTMFS4833NST3G

NTMFS4833NS Power MOSFET 30 V, 156 A, Single N−Channel, SO−8 FL Features • • • • • Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS 30 V Applications RDS(ON) MAX ID MAX 2.2 mW @ 10 V 156 A 3.4 mW @ 4.5 V 127 A • CPU Power Delivery • DC−DC Converters • Low Side Switching DRAIN MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 26 A Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C PD 2.31 W Continuous Drain Current RqJA (Note 2) TA = 25°C ID 16 A Power Dissipation RqJA (Note 2) TA = 85°C Steady State TA = 85°C 0.9 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 156 A Power Dissipation RqJC (Note 1) TC = 25°C TC = 85°C Operating Junction and Storage Temperature Source Current (Body Diode) SENSE SOURCE MARKING DIAGRAM S SO−8 FLAT LEAD S S CASE 506BQ G 1 11.6 PD TA = 25°C, tp = 10 ms Kelvin 18 TA = 25°C Pulsed Drain Current GATE 113 PD 86.2 W IDM 312 A TJ, TSTG −55 to +150 °C IS 86 A Drain to Source DV/DT dV/dt 6 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V, IL = 35 Apk, L = 1.0 mH, RG = 25 W) EAS 612.5 mJ Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C A Y W ZZ (Do Not Connect) NC 4833NS SENSE AYWZZ KELVIN K1 (Do Not Connect) D D = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION Package Shipping† NTMFS4833NST1G SO−8 FL (Pb−Free) 1500 Tape / Reel NTMFS4833NST3G SO−8 FL (Pb−Free) 5000 Tape / Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. © Semiconductor Components Industries, LLC, 2012 May, 2017 − Rev. 2 1 Publication Order Number: NTMFS4833NS/D NTMFS4833NS THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Case (Drain) Parameter RqJC 1.45 Junction−to−Ambient – Steady State (Note 3) RqJA 54 Junction−to−Ambient – Steady State (Note ) RqJA 138.7 Unit °C/W 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V 30 VGS = 0 V, VDS = 24 V mV/°C TJ = 25 °C 1 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.5 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) 6.8 VGS = 10 V VGS = 4.5 V Forward Transconductance 1.5 gFS ID = 30 A 1.4 ID = 15 A 1.3 ID = 30 A 2.3 ID = 15 A 2.3 VDS = 15 V, ID = 15 A mV/°C 2.2 3.4 100 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance 5250 VGS = 0 V, f = 1 MHz, VDS = 12 V 1080 CRSS 500 Total Gate Charge QG(TOT) 36 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge VGS = 4.5 V, VDS = 15 V; ID = 30 A 3.8 15 pF 63 nC 13 QG(TOT) VGS = 11.5 V, VDS = 15 V; ID = 30 A 86 nC SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 21 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 60 37 44 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. 7. With 0V potential from sense lead to source lead, i.e. using a virtual ground. www.onsemi.com 2 ns NTMFS4833NS ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 11 tr td(OFF) 34 VGS = 11.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W ns 53 tf 34 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.80 TJ = 125°C 0.67 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 30 A 1.2 V 36 18 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A ns 18 QRR 32 nC Source Inductance LS 0.65 nH Drain Inductance LD 0.005 nH Gate Inductance LG 1.84 nH Gate Resistance RG 1.4 W PACKAGE PARASITIC VALUES TA = 25°C CURRENT SENSE CHARACTERISTICS Current Sensing Ratio Iratio VGS = 5 V, 0-70°C, 5-20 A 357 387 417 Current Sensing Ratio Iratio VGS = 5 V, 0-70°C, 1−5 A 351 387 423 Current Sense Temperature Coefficient (Note 7) Mirror Resistance rm(on) VGS = 5 V 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. 7. With 0V potential from sense lead to source lead, i.e. using a virtual ground. www.onsemi.com 3 0.006 %/°C 0.80 W NTMFS4833NS TYPICAL CHARACTERISTIC CURVES ID, DRAIN CURRENT (AMPS) 3.6 V 140 120 3.4 V 100 80 3.2 V 60 40 3.0 V 20 2.8 V 0 1 2 4 3 125 100 75 TJ = 125°C 50 TJ = 25°C 25 5 TJ = −55°C 2 2.5 3 3.5 4 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ID = 30 A TJ = 25°C 0.014 0.012 0.010 0.008 0.006 0.004 0.002 0 2 6 4 8 10 12 0.004 4.5 TJ = 25°C 0.003 VGS = 4.5 V 0.002 VGS = 10 V 0.001 0 0 10 20 30 40 50 60 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.80 1.60 150 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.016 0 VDS ≥ 10 V 175 0 1.5 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 3.8 V TJ = 25°C 160 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 200 4.0 V thru 6.0 V 180 100,000 VGS = 0 V ID = 30 A VGS = 10 V IDSS, LEAKAGE (nA) ID, DRAIN CURRENT (AMPS) 200 TJ = 150°C 10,000 1.40 1.20 1.00 TJ = 125°C 1,000 0.80 0.60 −50 100 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 4 30 NTMFS4833NS TYPICAL CHARACTERISTIC CURVES 10 5000 4000 TJ = 25°C VGS = 0 V f = 1 MHz 3000 2000 Coss 1000 0 Crss 0 10 5 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) C, CAPACITANCE (pF) Ciss 15 20 25 30 DRAIN−TO−SOURCE VOLTAGE (VOLTS) 15 8 VDS 10 QGS 4 5 2 0 ID = 30 A TJ = 25°C 0 IS, SOURCE CURRENT (AMPS) tr td(on) 10 1 1 10 50 20 30 60 70 40 QG, TOTAL GATE CHARGE (nC) 10 RG, GATE RESISTANCE (W) 20 15 10 5 0 0.4 100 VGS = 0 V 0.5 0.6 0.8 0.9 1.0 Figure 10. Diode Forward Voltage vs. Current 100 1 ms 10 10 ms VGS = 20 V SINGLE PULSE TC = 25°C 0.01 0.01 0.7 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) 1000 0.1 0 90 TJ = 25°C 25 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1 80 30 tf 100 QGD Figure 8. Gate−To−Source and Drain−To−Source Voltage vs. Total Charge td(off) I D, DRAIN CURRENT (AMPS) t, TIME (ns) VGS = 11.5 V VDD = 15 V ID = 15 A VGS 6 Figure 7. Capacitance Variation 1000 20 QT VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 12 6000 100 ms 1 ms 10 ms RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT dc 0.1 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 5 100 NTMFS4833NS R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE TYPICAL CHARACTERISTIC CURVES 100 50% (DUTY CYCLE) 10 1.0 0.1 20% 10% 5.0% 2.0% 1.0% SINGLE PULSE RqJA = 54°C/W 0.01 0.000001 0.00001 0.0001 0.001 0.1 0.01 t, TIME (s) Figure 12. FET Thermal Response www.onsemi.com 6 1.0 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN8 5x6, 1.27P CASE 506BQ ISSUE C 1 2X SCALE 2:1 0.20 C D A B D1 8 7 6 2X 0.20 C 5 E1 E PIN ONE IDENTIFIER NOTE 7 DATE 12 APR 2012 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 MM FROM THE TERMINAL TIP. 4. PROFILE TOLERANCE APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINAL. 5. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST POINT ON THE PACKAGE BODY. 7. A VISUAL INDICATOR FOR PIN 1 MUST BE LOCATED IN THIS AREA. 4X 1 2 3 c 4 GENERIC MARKING DIAGRAM* A1 TOP VIEW 1 0.10 C A NOTE 4 SEATING PLANE NOTE 6 C SIDE VIEW XXXXXX AYWZZ DETAIL A 0.10 C DETAIL A XXXXXX= Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability D2 1 8X M DIM A A1 b c D D1 D2 E E1 E2 e G h K L M N h 4 L N K 8 e MILLIMETERS MAX MIN 1.10 0.90 −−− 0.05 0.33 0.51 0.20 0.33 5.15 BSC 4.50 5.10 3.90 4.30 6.15 BSC 5.50 6.10 3.00 3.50 1.27 BSC 0.80 1.20 −−− 12 _ 0.20 −−− 0.51 0.71 3.25 3.75 1.80 2.20 *This information is generic. Please refer to device data sheet for actual part marking. E2 G 5 SOLDERING FOOTPRINT* 8X b BOTTOM VIEW 1.27 PITCH 8X 0.10 C A B 0.05 c 0.75 4X 0.92 NOTE 3 4.84 4X 0.90 2.00 6.59 3.70 0.99 4X 1.00 4.56 5.55 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON38888E DFN8 5X6, 1.27P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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