NTMFS4C55NT3G

NTMFS4C55N Power MOSFET 30 V, 78 A, Single N−Channel, SO−8 FL Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS Applications • CPU Power Delivery • DC−DC Converters RDS(ON) MAX ID MAX 3.4 mW @ 10 V 30 V 78 A 5.0 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Symbol Value Unit VDSS 30 V VGS ±20 V ID 21.7 A Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C PD 2.57 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 34.8 A Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) TA = 80°C TA = 25°C PD 6.6 W TA = 25°C ID 11.9 A 8.9 TA = 25°C Continuous Drain Current RqJC (Note 1) TC = 25°C PD Power Dissipation RqJC (Note 1) TC = 25°C PD 33 W TA = 25°C, tp = 10 ms IDM 174 A ID TC =80°C TA = 25°C 0.77 W 78 MARKING DIAGRAM 58 80 A TJ, TSTG −55 to +150 °C IS 30 A Drain to Source dV/dt dV/dt 7.0 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VGS = 10 V, IL = 41 Apk, L = 0.1 mH, RGS = 25 W) (Note 3) EAS 84 TL 260 Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) SO−8 FLAT LEAD CASE 488AA STYLE 1 S S S G D 4C55N AYWZZ D D 1 A Y W ZZ = Assembly Location = Year = Work Week = Lot Traceabililty ORDERING INFORMATION Device Package Shipping† NTMFS4C55NT1G SO−8 FL (Pb−Free) 1500 / Tape & Reel mJ NTMFS4C55NT3G SO−8 FL (Pb−Free) 5000 / Tape & Reel °C †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. 3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C, VGS = 10 V, IL = 29 A, EAS = 42 mJ. © Semiconductor Components Industries, LLC, 2015 1 A IDmax Operating Junction and Storage Temperature November, 2015 − Rev. 1 N−CHANNEL MOSFET D TA = 80°C Current Limited by Package S (1,2,3) 26.0 Power Dissipation RqJA (Note 2) Pulsed Drain Current G (4) 16.3 TA = 80°C Steady State D (5−8) Publication Order Number: NTMFS4C55N/D NTMFS4C55N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Case (Drain) Parameter RqJC 3.8 Junction−to−Ambient – Steady State (Note 4) RqJA 48.6 Junction−to−Ambient – Steady State (Note 5) RqJA 161.7 Junction−to−Ambient – (t ≤ 10 s) (Note 4) RqJA 19 Unit °C/W 4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 5. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage (transient) V(BR)DSSt VGS = 0 V, ID(aval) = 12.6 A, Tcase = 25°C, ttransient = 100 ns 34 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V V 12 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.2 V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) 1.3 5.1 mV/°C VGS = 10 V ID = 30 A 2.7 3.4 VGS = 4.5 V ID = 30 A 4.0 5.0 mW Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 68 S Gate Resistance RG TA = 25°C 1.0 W CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 1972 VGS = 0 V, f = 1 MHz, VDS = 15 V 1215 pF 59 Capacitance Ratio CRSS/CISS Total Gate Charge QG(TOT) 14 Threshold Gate Charge QG(TH) 3.3 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 5.0 Gate Plateau Voltage VGP 3.1 V 30 nC Total Gate Charge VGS = 0 V, VDS = 15 V, f = 1 MHz VGS = 4.5 V, VDS = 15 V; ID = 30 A QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 0.030 6.0 nC SWITCHING CHARACTERISTICS (Note 7) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 11 VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 32 21 7.0 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 ns NTMFS4C55N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 7) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 8.0 VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 26 ns 26 5.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.77 TJ = 125°C 0.62 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 1.1 V 40.2 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 20.3 19.9 30.2 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 3 ns nC NTMFS4C55N 0.028 0.026 0.024 0.022 0.020 0.018 0.016 0.014 0.012 0.010 0.008 0.006 0.004 0.002 3.0 TJ = 25°C 3.8 V 3.6 V 4 V to 6.5 V ID, DRAIN CURRENT (A) 140 130 10 V 120 110 100 90 80 70 60 50 40 30 20 10 0 0 3.4 V 3.2 V 3.0 V 2.8 V 2.6 V 1 2 3 5 4 140 130 VDS = 5 V 120 110 100 90 80 70 60 50 40 30 20 10 0 0 0.5 1.0 2.0 2.5 3.0 3.5 4.0 Figure 2. Transfer Characteristics ID = 30 A TJ = 25°C 4.0 5.0 6.0 7.0 8.0 9.0 10 4.5 0.008 TJ = 25°C 0.007 0.006 0.005 VGS = 4.5 V 0.004 VGS = 10 V 0.003 0.002 10 20 30 40 50 60 70 ID, DRAIN CURRENT (A) Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10000 1.7 VGS = 0 V ID = 30 A VGS = 10 V TJ = 150°C IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = −55°C 1.5 Figure 1. On−Region Characteristics Figure 3. On−Resistance vs. VGS 1.5 TJ = 25°C VGS, GATE−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) 1.6 TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) TYPICAL CHARACTERISTICS 1.4 1.3 1.2 1.1 1.0 1000 TJ = 125°C 100 TJ = 85°C 0.9 0.8 0.7 −50 10 −25 0 25 50 75 100 125 150 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 4 30 NTMFS4C55N TYPICAL CHARACTERISTICS VGS = 0 V TJ = 25°C 2750 2500 C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) 3000 2250 Ciss 2000 1750 1500 1250 1000 Coss 750 500 250 0 Crss 0 5 10 15 20 25 30 QT 8 6 4 Qgd Qgs TJ = 25°C VDD = 15 V VGS = 10 V ID = 30 A 2 0 0 4 8 12 16 24 28 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 32 20 VDD = 15 V ID = 15 A VGS = 10 V IS, SOURCE CURRENT (A) 18 td(off) td(on) 100 tr tf 10 VGS = 0 V 16 14 12 10 8 6 4 TJ = 125°C TJ = 25°C 2 1 1 10 0.6 0.7 0.8 0.9 1.0 Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 10 ms 100 ms 10 10 ms 0 V < VGS < 10 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 0.1 dc 1 10 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) VSD, SOURCE−TO−DRAIN VOLTAGE (V) 1 ms 0.1 0.01 0.5 RG, GATE RESISTANCE (W) 100 1 0 0.4 100 1000 ID, DRAIN CURRENT (A) 20 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 t, TIME (ns) 10 100 45 ID = 29 A 40 35 30 25 20 15 10 5 0 25 50 75 100 125 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature www.onsemi.com 5 150 NTMFS4C55N TYPICAL CHARACTERISTICS 100 Duty Cycle = 50% R(t) (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Response 100 120 ID, DRAIN CURRENT (A) 100 GFS (S) 80 60 40 20 0 0 10 20 30 40 50 60 70 TA = 25°C 1 1.E−07 80 TA = 85°C 10 1.E−06 1.E−05 1.E−04 ID (A) PULSE WIDTH (SECONDS) Figure 14. GFS vs. ID Figure 15. Avalanche Characteristics www.onsemi.com 6 1.E−03 NTMFS4C55N PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE M 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 q E 2 c 1 2 3 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q A1 4 TOP VIEW C SEATING PLANE DETAIL A 0.10 C A 0.10 C SIDE VIEW DETAIL A STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN RECOMMENDED SOLDERING FOOTPRINT* 2X 0.495 0.10 b C A B 0.05 c MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 5.00 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.15 6.30 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ 4.560 2X 8X 1.530 e/2 e L 1 4 3.200 K 4.530 E2 PIN 5 (EXPOSED PAD) L1 1.330 2X M 0.905 1 0.965 G D2 4X BOTTOM VIEW 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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