NTMFS5830NLT1G

NTMFS5830NL Power MOSFET 40 V, 172 A, 2.3 mW Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V ID 28 A Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C Continuous Drain Current RqJC (Note 1) TA = 70°C Steady State Pulsed Drain Current PD TC = 25°C ID Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 85 Apk, L = 0.1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) W 3.2 PD G (4) S (1,2,3) W 125 MARKING DIAGRAM 80 IDM 690 A TJ, TSTG −55 to +150 °C IS 172 A EAS 361 mJ TL 260 Symbol Value Junction−to−Case (Drain) (Note 1) RqJC 1.0 Junction−to−Ambient Steady State (Note 1) RqJA 39 Junction−to−Ambient Steady State (Note 2) RqJA 73 °C Unit D 1 DFN5 (SO−8FL) CASE 488AA STYLE 1 A Y W ZZ °C/W 1 S S S G 5830NL AYWZZ D D D = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION Device NTMFS5830NLT1G 1. Surface−mounted on FR4 board using 1 sq−in pad (Cu area = 1.127 in sq [2 oz] inclusing traces). 2. Surface−mounted on FR4 board using 0.155 in sq (100mm2) pad size. June, 2012 − Rev. 2 D (5) N−CHANNEL MOSFET THERMAL RESISTANCE MAXIMUM RATINGS © Semiconductor Components Industries, LLC, 2012 172 A 3.6 mW @ 4.5 V A 172 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Parameter ID MAX 2.3 mW @ 10 V 40 V 138 TC = 70°C tp = 10 ms RDS(ON) MAX 2.0 TC = 70°C Power Dissipation RqJC (Note 1) V(BR)DSS 22 TA = 70°C TC = 25°C http://onsemi.com Package Shipping† DFN5 1500/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTMFS5830NL/D NTMFS5830NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 32 VGS = 0 V, VDS = 40 V mV/°C TJ = 25 °C 1 TJ = 125°C 100 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA ±100 mA nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.0 3.0 7.2 VGS = 10 V ID = 20 A 1.7 2.3 VGS = 4.5 V ID = 20 A 2.6 3.6 gFS VDS = 5 V, ID = 10 A V mV/°C 38 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 5880 VGS = 0 V, f = 1 MHz, VDS = 25 V 750 pF 500 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 32 V; ID = 60 A Threshold Gate Charge QG(TH) 5.5 Gate−to−Source Charge QGS 19.5 Gate−to−Drain Charge QGD Plateau Voltage VGP 3.6 V Gate Resistance RG 0.5 W td(ON) 22 VGS = 4.5 V, VDS = 32 V; ID = 60 A 113 nC 32 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 20 V, ID = 10 A, RG = 2.5 W tf 32 ns 40 27 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.74 TJ = 125°C 0.58 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 1.0 V 41 VGS = 0 V, dIS/dt = 100 A/ms, IS = 60 A QRR 19 19 33 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns nC NTMFS5830NL TYPICAL CHARACTERISTICS 5.5 V 10 V 350 4.4 V 4.2 V ID, DRAIN CURRENT (A) 300 4.0 V 250 3.8 V 200 3.6 V 150 3.4 V 100 VGS = 3.2 V 50 TJ = 25°C 0 1 2 3 4 250 200 150 50 TJ = 125°C TJ = −55°C 2 3 4 5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.0035 0.010 ID = 20 A TJ = 25°C 0.008 TJ = 25°C 0.0030 VGS = 4.5 V 0.0025 0.006 0.004 0.0020 0.002 VGS = 10 V 0.0015 0.000 0 2 4 6 8 0.0010 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 0 25 50 75 100 125 150 175 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100000 2.0 1.8 TJ = 25°C 100 0 5 VGS = 10 V ID = 20 A VGS = 0 V IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 VDS ≥ 10 V 300 ID, DRAIN CURRENT (A) 350 1.6 1.4 1.2 1.0 TJ = 150°C 10000 TJ = 125°C 0.8 0.6 −50 −25 0 25 50 75 100 125 150 1000 10 20 30 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 40 NTMFS5830NL TYPICAL CHARACTERISTICS C, CAPACITANCE (pF) 7000 VGS, GATE−TO−SOURCE VOLTAGE (V) 8000 VGS = 0 V TJ = 25°C Ciss 6000 5000 4000 3000 2000 Coss 1000 0 Crss 0 10 20 30 40 8 6 Qgs 4 Qgd 2 VDS = 32 A ID = 60 A TJ = 25°C 0 0 10 20 30 40 50 60 70 80 90 100 110 120 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge 175 100 IS, SOURCE CURRENT (A) VDD = 20 V ID = 10 A VGS = 4.5 V td(off) tr tf td(on) 1 10 100 150 VGS = 0 V TJ = 25°C 125 100 75 50 25 0 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 ID, DRAIN CURRENT (A) t, TIME (ns) QT VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 10 10 10 ms 100 100 ms 1 ms 10 10 ms 1 0.1 0.01 0.1 VGS = 10 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit dc 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 100 NTMFS5830NL TYPICAL CHARACTERISTICS RqJA(t) (°C/W) EFFECTIVE TRANSIENT THERMAL RESISTANCE 100 Duty Cycle = 0.5 10 0.2 0.1 0.05 1 0.02 0.01 0.1 0.01 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 12. Thermal Response http://onsemi.com 5 1 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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