NTMFS5C460NL

DATA SHEET www.onsemi.com MOSFET – Power, Single, N-Channel V(BR)DSS RDS(ON) MAX ID MAX 40 V 4.5 mW @ 10 V 78 A 7.2 mW @ 4.5 V 40 V, 4.5 mW, 78 A D (5) NTMFS5C460NL Features • • • • G (4) Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free and are RoHS Compliant S (1,2,3) N−CHANNEL MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V ID 78 A Parameter Continuous Drain Current RqJC (Notes 1, 3) Steady State Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) TC = 25°C TC = 100°C TC = 25°C 55 PD TC = 100°C Steady State Power Dissipation RqJA (Notes 1 & 2) TA = 25°C W 50 25 ID TA = 100°C A 21 15 PD 3.6 IDM 520 A TJ, Tstg −55 to +175 °C IS 56 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 5 A) EAS 107 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Pulsed Drain Current TA = 25°C TA = 100°C TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) W MARKING DIAGRAM 1 DFN5 (SO−8FL) CASE 488AA STYLE 1 D S S S G D 5C460L AYWZZ D D 5C460L = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability 1.8 ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RqJC 3.0 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 42 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2016 September, 2023 − Rev. 5 1 Publication Order Number: NTMFS5C460NL/D NTMFS5C460NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 − − V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ − 21 − mV/°C TJ = 25 °C − − 10 mA TJ = 125°C − − 250 − 100 OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS VGS = 0 V, VDS = 40 V IGSS VDS = 0 V, VGS = 20 V − nA VGS(TH) VGS = VDS, ID = 40 mA 1.2 − 2.0 V − −5.1 − mV/°C mW ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance VGS(TH)/TJ RDS(on) VGS = 10 V ID = 35 A − 3.7 4.5 VGS = 4.5 V ID = 35 A − 5.8 7.2 VDS = 15 V, ID = 35 A − 72 − S VGS = 0 V, f = 1 MHz, VDS = 20 V pF gFS CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS − 1300 − Output Capacitance COSS − 530 − Reverse Transfer Capacitance CRSS − 22 − Total Gate Charge QG(TOT) VGS = 10 V, VDS = 20 V; ID = 35 A − 23 − nC Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 20 V; ID = 35 A − 11 − nC Threshold Gate Charge QG(TH) − 2.5 − Gate−to−Source Charge QGS − 4.7 − Gate−to−Drain Charge QGD − 3.0 − Plateau Voltage VGP − 3.3 − V − 9.2 − ns − 3.4 − td(OFF) − 17 − tf − 4.4 − TJ = 25°C − 0.86 1.2 TJ = 125°C − 0.75 − − 29 − − 14 − tb − 14 − QRR − 12 − SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr VGS = 4.5 V, VDS = 20 V, ID = 35 A, RG = 1.0 W DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD tRR ta VGS = 0 V, IS = 35 A VGS = 0 V, dIs/dt = 100 A/ms, IS = 35 A V ns nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFS5C460NL TYPICAL CHARACTERISTICS 100 ID, DRAIN CURRENT (A) 90 VGS = 4.5 V to 10 V 80 3.6 V 70 60 50 3.2 V 40 30 20 2.8 V 70 60 50 40 20 10 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 14 12 10 8 6 4 3 4 5 7 6 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 4 5 8 TJ = 25°C 7 VGS = 4.5 V 6 5 4 VGS = 10 V 3 2 0 20 10 30 40 50 60 70 90 100 80 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.9 RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 3 Figure 2. Transfer Characteristics 16 100000 TJ = 175°C VGS = 10 V ID = 35 A IDSS, LEAKAGE (nA) 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 −50 2 Figure 1. On−Region Characteristics 18 1.8 1.7 1 TJ = −55°C VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 35 A 2 TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 20 2 TJ = 25°C 30 0 0 VDS = 10 V 80 10 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 90 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 100 4.0 V −25 0 25 50 75 100 125 150 175 10000 TJ = 125°C 1000 TJ = 85°C 100 10 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 40 NTMFS5C460NL TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 10000 CISS 1000 COSS 100 CRSS 10 1 VGS = 0 V TJ = 25°C f = 1 MHz 0 5 10 15 20 25 30 35 40 7 6 5 QGD QGS 4 3 VDS = 20 V TJ = 25°C ID = 35 A 2 1 0 0 5 10 15 20 25 Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge IS, SOURCE CURRENT (A) 100 tf 100 t, TIME (ns) 8 QG, TOTAL GATE CHARGE (nC) tr td(off) td(on) 10 VGS = 4.5 V VDS = 20 V ID = 35 A 1 10 100 VGS = 0 V 10 1 0.1 TJ = 125°C 0.01 0.001 TJ = 25°C TJ = −55°C 0.2 0.4 0.6 0.8 1.0 1.2 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 1000 100 10 10 TC = 25°C VGS ≤ 10 V Single Pulse 1 500 ms 1 ms 10 ms 0.1 1 TJ (initial)= 25°C 0.1 10 TJ (initial)= 100°C 1 RDS(on) Limit Thermal Limit Package Limit 0.1 0.01 IPEAK, (A) ID, DRAIN CURRENT (A) QT 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 1 10 100 1E−4 1E−3 VDS (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 10E−2 NTMFS5C460NL TYPICAL CHARACTERISTICS RqJA(t), TRANSIENT THERMAL IMPEDANCE (°C/W) 100 50% Duty Cycle 10 1 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 TA = 25°C 0.0001 0.001 0.01 0.1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (s) Figure 13. Thermal Response RqJC(t), TRANSIENT THERMAL IMPEDANCE (°C/W) 10 50% Duty Cycle 1 20% 10% 5% 0.1 2% 1% Single Pulse 0.01 0.000001 TC = 25°C 0.00001 0.01 0.001 0.0001 0.1 1 t, RECTANGULAR PULSE DURATION (s) Figure 14. Thermal Response DEVICE ORDERING INFORMATION Device Marking Package Shipping† NTMFS5C460NLT1G 5C460L DFN5 (Pb−Free) 1500 / Tape & Reel NTMFS5C460NLT3G 5C460L DFN5 (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D 2 A B D1 2X 0.20 C 4X E1 2 1 2 3 q E c A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K PIN 5 (EXPOSED PAD) RECOMMENDED SOLDERING FOOTPRINT* E2 L1 M 2X 0.495 4.560 2X 1.530 G D2 BOTTOM VIEW 2X XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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