NTMFS7D8N10GTWG

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Other names and brands may be claimed as the property of others. MOSFET - Power, Single N-Channel, PQFN8 100 V, 7.6 mW, 110 A NTMFS7D8N10G Features • • • • • Wide SOA for Linear Mode Operation Low RDS(on) to Minimize Conduction Loss High Peak UIS Current Capability for Ruggedness Small Footprint (5x6 mm) for Compact Design These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com VSSS RSS(ON) MAX ID MAX 100 V 7.6 mW @ 10 V 110 A Typical Applications N−Channel MOSFET • 48 V Hot Swap System, Load Switch, Soft Start, E−Fuse MAXIMUM RATINGS (TJ = 25°C, Unless otherwise specified) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Voltage VGS ±20 V ID 110 A PD 187 W ID 14 A PD 3 W IDM 1656 A Continuous Drain Current RqJC (Note 2) Power Dissipation RqJC (Note 2) Continuous Drain Current RqJA (Note 1, 2) Power Dissipation RqJA (Note 1, 2) Pulsed Drain Current Steady State Steady State TC = 25°C S 1 8 D S 2 7 D S 3 6 D G 4 5 D TA = 25°C TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IAV = 70 A, L = 0.1 mH) Lead Temperature Soldering Reflow for Soldering Purposes (1/8″ from case for 10 s) TJ, Tstg −55 to +175 °C IS 155 A EAS 245 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 in2 pad size, 1 oz Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. Top Bottom PQFN8 5x6 CASE 483AF MARKING DIAGRAM 7D8N10 AYWZZ 7D8N10 = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2013 March, 2021 − Rev. 0 1 Publication Order Number: NTMFS7D8N10G/D NTMFS7D8N10G THERMAL CHARACTERISTICS Symbol Max Unit RqJC Junction−to−Case – Steady State Parameter 0.8 °C/W RqJA Junction−to−Ambient – Steady State 50 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Drain*to*Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 100 Drain*to*Source Breakdown Voltage Temperature Coefficient V(BR)DSS / TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate*to*Source Leakage Current ID = 250 mA, ref to 25°C VGS = 0 V, VDS = 80 V V 87.9 mV/°C TJ = 25°C 1 TJ = 125°C 100 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 254 mA mA ±100 nA 4.0 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH) / TJ Drain*to*Source On Resistance ID = 254 mA, ref to 25°C 2.0 −9.4 mV/°C RDS(on) VGS = 10 V, ID = 48 A 5.6 7.6 Forward Transconductance gFS VDS = 5 V, ID = 48 A 37 S Gate−Resistance RG TA = 25°C 0.33 W 6180 pF mW CHARGES & CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 99 QG(TOT) 92 Total Gate Charge VGS = 0 V, f = 1 MHz, VDS = 50 V 624.5 nC Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Plateau Voltage VGP 6 V td(ON) 32 ns VGS = 10 V, VDS = 50 V, ID = 48 A 35 26 SWITCHING CHARACTERISTICS (Note 3) Turn*On Delay Time Rise Time Turn*Off Delay Time tr td(OFF) Fall Time VGS = 10 V, VDS = 50 V, ID = 48 A, RG = 4.7 W tf 24 51 14 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Reverse Recovery Charge QRR Reverse Recovery Time tRR Reverse Recovery Charge QRR VGS = 0 V, IS = 48 A TJ = 25°C 0.84 TJ = 125°C 0.73 VGS = 0 V, dIS/dt = 300 A/ms, IS = 24 A VGS = 0 V, dIS/dt = 1000 A/ms, IS = 24 A V 42 ns 177 nC 33 ns 411 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFS7D8N10G TYPICAL CHARACTERISTICS 200 15 V 12 V 10 V 160 7.5 V 100 7.0 V 80 6.5 V 6.0 V 5.5 V 5.0 V 4.5 V 60 40 20 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 1 2 3 4 120 100 TJ = 125°C 80 60 40 5 0 3 5 4 6 8 7 9 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 30 25 20 15 10 5 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 10 TJ = 25°C 8 VGS = 10 V 6 4 2 0 20 40 60 80 100 120 140 160 180 200 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.0 100K VGS = 10 V ID = 48 A 10K 1.6 IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 2 VGS, GATE−TO−SOURCE VOLTAGE (V) 35 1.8 1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 48 A 4 TJ = 25°C 140 20 0 40 0 160 ID, DRAIN CURRENT (A) 8.0 V 120 TJ = −55°C 180 8.5 V 140 0 200 9.0 V VGS = 9.5 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 180 1.4 1.2 1.0 0.8 TJ = 150°C TJ = 125°C 1K 100 TJ = 85°C 10 TJ = 25°C 1 0.1 0.01 0.6 0.4 −50 −25 0 25 50 75 100 125 150 175 0.001 5 15 25 35 45 55 65 75 85 95 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 NTMFS7D8N10G TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 10K C, CAPACITANCE (pF) CISS 1K COSS CRSS 100 10 1 VGS = 0 V TJ = 25°C f = 1 MHz 10 0 30 20 40 50 60 70 80 90 100 10 9 8 7 QGS 6 5 4 3 VDS = 50 V TJ = 25°C ID = 48 A 2 1 0 0 40 td(off) td(on) 1 VGS = 10 V VDS = 50 V ID = 48 A 0.1 t f 70 80 90 100 VGS = 0 V 1 10 100 TJ = 150°C 10 TJ = 125°C TJ = 25°C 1 TJ = −55°C 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 10 ms 100 TJ(initial) = 25°C 100 ms 10 TC = 25°C Single Pulse VGS ≤ 10 V 1 1 ms RDS(on) Limit Thermal Limit Package Limit 1 IPEAK (A) ID, DRAIN CURRENT(A) 60 TJ = 175°C 0.1 1000 0.1 50 Figure 8. Gate−to−Source Voltage vs. Total Charge IS, SOURCE CURRENT (A) t, TIME (ns) 30 Figure 7. Capacitance Variation tr 0.01 20 QG, TOTAL GATE CHARGE (nC) 100 10 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 100 QGD 10 10 TJ(initial) = 100°C 10 ms 100 ms 1 0.000001 100 0.00001 0.0001 0.001 0.01 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 0.1 NTMFS7D8N10G TYPICAL CHARACTERISTICS 1 ZqJC (°C/W) 0.1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.001 Single Pulse 0.0001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 13. Thermal Characteristics ORDERING INFORMATION Device NTMFS7D8N10G Device Marking Package Shipping† 7D8N10 PQFN8 5x6 (Pb−Free/Halogen Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NTMFS7D8N10G PACKAGE DIMENSIONS PQFN8 5X6, 1.27P CASE 483AF ISSUE O www.onsemi.com 6 NTMFS7D8N10G ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 www.onsemi.com 7 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative