NTMJS1D5N04CL
Power MOSFET
Single N−Channel, 40 V, 1.4 mW, 200 A
Features
•
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK8 Package, Industry Standard
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
ID
200
A
Continuous Drain
Current RqJC
(Notes 1, 3)
Steady
State
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
TC = 100°C
TC = 25°C
Power Dissipation
RqJA (Notes 1 & 2)
TA = 25°C
PD
ID
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 15 A)
Single Pulse Drain−to−Source Voltage
(tp = 10 ms)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
W
110
G (4)
A
38
27
S (1,2,3)
N−CHANNEL MOSFET
PD
3.8
IDM
900
A
TJ, Tstg
−55 to
+ 175
°C
IS
120
A
EAS
493
mJ
VDSM
48
V
TL
260
°C
TA = 100°C
TA = 25°C, tp = 10 ms
D (5)
53
TA = 100°C
TA = 25°C
200 A
2.2 mW @ 4.5 V
140
TC = 100°C
Steady
State
Pulsed Drain Current
TC = 25°C
ID MAX
1.4 mW @ 10 V
40 V
Symbol
Parameter
RDS(ON) MAX
W
1.9
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
MARKING
DIAGRAM
LFPAK8
CASE 760AA
1D5N04
CL
AWLYW
1D5N04CL = Specific Device Code
A
= Assembly Location
WL
= Wafer Lot
Y
= Year
W
= Work Week
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
ORDERING INFORMATION
Junction−to−Case − Steady State
RqJC
1.4
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
36
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2017
March, 2019 − Rev. 0
1
Publication Order Number:
NTMJS1D5N04CL/D
NTMJS1D5N04CL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
2.0
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25 °C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 130 mA
100
mA
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
1.2
2.0
−5.6
VGS = 4.5 V
ID = 50 A
1.7
2.2
VGS = 10 V
ID = 50 A
1.2
1.4
gFS
V
mV/°C
mW
VDS =15 V, ID = 50 A
256
S
VGS = 0 V, f = 1 MHz, VDS = 20 V
4300
pF
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
1900
Reverse Transfer Capacitance
CRSS
72
nC
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 20 V; ID = 50 A
32
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 20 V; ID = 50 A
70
Threshold Gate Charge
QG(TH)
VGS = 4.5 V, VDS = 20 V; ID = 50 A
7.0
Gate−to−Source Charge
QGS
12
Gate−to−Drain Charge
QGD
9.0
Plateau Voltage
VGP
2.9
V
15
ns
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
VGS = 4.5 V, VDS = 20 V,
ID = 50 A, RG = 1 W
140
td(OFF)
31
tf
9
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
tRR
ta
VGS = 0 V,
IS = 50 A
TJ = 25°C
0.81
TJ = 125°C
0.68
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 50 A
61
1.2
V
ns
29
tb
32
QRR
80
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMJS1D5N04CL
TYPICAL CHARACTERISTICS
280
280
3.2 V
160
120
3.0 V
80
2.8 V
40
2.6 V
160
120
TJ = 25°C
80
40
TJ = −55°C
TJ = 125°C
1
1.5
2
2.5
3
3.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
TJ = 25°C
ID = 50 A
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
2.0
200
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
5.0
0.0
VDS = 5 V
240
ID, DRAIN CURRENT (A)
200
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
3.4 V
3.6 V to
10 V
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
VGS, GATE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
240
3.0
4
TJ = 25°C
2.5
2.0
VGS = 4.5 V
1.5
VGS = 10 V
1.0
0.5
0
20
60
100
140
180
220
260
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100000
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
1.9
VGS = 10 V
ID = 50 A
TJ = 175°C
IDSS, LEAKAGE (nA)
1.7
1.5
1.3
1.1
10000
TJ = 125°C
1000
TJ = 85°C
100
0.9
0.7
−50
−25
0
25
50
75
100
125
150
175
10
0
10
20
30
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
40
NTMJS1D5N04CL
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
10000
C, CAPACITANCE (pF)
CISS
10
COSS
1000
CRSS
100
10
VGS = 0 V
TJ = 25°C
f = 1 MHz
0
10
20
30
40
QT
8
6
QGD
QGS
4
VDS = 20 V
TJ = 25°C
ID = 50 A
2
0
0
10
20
30
40
50
60
70
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
100.0
1000.0
tr
tf
t, TIME (ns)
100.0
TJ = 125°C
td(on)
IS, (A)
td(off)
10.0
TJ = 25°C
10.0
VGS = 4.5 V
VDD = 20 V
ID = 50 A
1.0
1
10
TJ = −55°C
1.0
100
1
0.1
0.1
0.6
0.7
0.8
0.9
1.0
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
100
TJ = 25°C
TC = 25°C
VGS ≤ 10 V
Single Pulse
IPEAK, (A)
10
0.5
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
1000
ID, DRAIN CURRENT (A)
0.4
RG, GATE RESISTANCE (W)
500 ms
TJ = 100°C
10
1 ms
RDS(on) Limit
Thermal Limit
Package Limit
1
10 ms
10
1
100
1E−4
1E−3
10E−2
VDS (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NTMJS1D5N04CL
TYPICAL CHARACTERISTICS
100
RqJA (°C/W)
50% Duty Cycle
10
20%
10%
1
5%
2%
1%
0.1
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
NTMJS1D5N04CLTWG
Marking
Package
Shipping†
1D5N04CL
LFPAK8
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
LFPAK8 5x6
CASE 760AA
ISSUE C
GENERIC
MARKING DIAGRAM*
XXXXXX
XXXXXX
AWLYW
DOCUMENT NUMBER:
DESCRIPTION:
XXXXXX
A
WL
Y
W
DATE 13 AUG 2019
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
*This information is generic. Please refer
to device data sheet for actual part
marking. Some products may not follow
the Generic Marking.
98AON82475G
LFPAK8 5x6
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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