NTMYS4D6N04CL
MOSFET – Power, Single,
N-Channel
40 V, 4.5 mW, 78 A
Features
•
•
•
•
•
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Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
These Devices are Pb−Free and are RoHS Compliant
V(BR)DSS
RDS(ON) MAX
ID MAX
4.5 mW @ 10 V
40 V
78 A
7.2 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
ID
78
A
Parameter
Continuous Drain
Current RqJC
(Notes 1, 3)
TC = 25°C
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
TC = 100°C
TC = 25°C
TC = 100°C
TA = 25°C
Power Dissipation
RqJA (Notes 1, 2)
Pulsed Drain Current
Steady
State
W
50
25
ID
TA = 100°C
TA = 25°C
G (4)
55
PD
A
21
PD
A
TJ, Tstg
−55 to
+175
°C
IS
56
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 5 A)
EAS
107
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
MARKING
DIAGRAM
1.8
520
Source Current (Body Diode)
N−CHANNEL MOSFET
W
3.6
IDM
Operating Junction and Storage Temperature
Range
S (1,2,3)
15
TA = 100°C
TA = 25°C, tp = 10 ms
D (5,6)
Symbol
Value
Unit
Junction−to−Case − Steady State
RqJC
3.0
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
40
LFPAK4
CASE 760AB
4D6N04CL
A
WL
Y
W
4D6N04
CL
AWLYW
= Specific Device Code
= Assembly Location
=Wafer Lot
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2018
June, 2019 − Rev. 0
1
Publication Order Number:
NTMYS4D6N04CL/D
NTMYS4D6N04CL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
21
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25 °C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 40 mA
100
mA
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
1.2
2.0
−5.5
VGS = 4.5 V
ID = 35 A
5.8
7.2
VGS = 10 V
ID = 35 A
3.7
4.5
gFS
VDS =15 V, ID = 35 A
V
mV/°C
72
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
1300
VGS = 0 V, f = 1 MHz, VDS = 25 V
530
pF
22
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 20 V; ID = 35 A
Total Gate Charge
QG(TOT)
11
Threshold Gate Charge
QG(TH)
2.5
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
3.0
Plateau Voltage
VGP
3.3
td(ON)
9.2
VGS = 4.5 V, VDS = 20 V; ID = 35 A
23
nC
nC
4.7
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 4.5 V, VDS = 20 V,
ID = 35 A, RG = 1 W
tf
3.4
ns
17
4.4
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 35 A
TJ = 25°C
0.86
TJ = 125°C
0.75
tRR
ta
tb
1.2
V
29
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 35 A
QRR
14
ns
14
12
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMYS4D6N04CL
TYPICAL CHARACTERISTICS
100
ID, DRAIN CURRENT (A)
90
VGS = 4.5 V to 10 V
80
3.6 V
70
60
50
3.2 V
40
30
20
2.8 V
70
60
50
40
20
10
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
0
14
12
10
8
6
4
3
4
5
7
6
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
4
5
8
TJ = 25°C
7
VGS = 4.5 V
6
5
VGS = 10 V
4
3
2
0
20
10
30
40
50
60
70
90 100
80
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.9
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
3
Figure 2. Transfer Characteristics
16
100000
TJ = 175°C
VGS = 10 V
ID = 35 A
IDSS, LEAKAGE (nA)
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−50
2
Figure 1. On−Region Characteristics
18
1.8
1.7
1
TJ = −55°C
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ = 25°C
ID = 35 A
2
TJ = 125°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
20
2
TJ = 25°C
30
0
0
VDS = 10 V
80
10
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
90
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
100
4.0 V
−25
0
25
50
75
100
125
150
175
10000
TJ = 125°C
1000
TJ = 85°C
100
10
5
10
15
20
25
30
35
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
40
NTMYS4D6N04CL
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
10000
CISS
1000
COSS
100
CRSS
10
1
VGS = 0 V
TJ = 25°C
f = 1 MHz
0
5
10
15
20
25
30
35
40
7
6
5
QGD
QGS
4
3
VDS = 20 V
TJ = 25°C
ID = 35 A
2
1
0
0
5
10
15
20
25
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
IS, SOURCE CURRENT (A)
100
tf
100
t, TIME (ns)
8
QG, TOTAL GATE CHARGE (nC)
tr
td(off)
td(on)
10
VGS = 4.5 V
VDS = 20 V
ID = 35 A
1
10
100
VGS = 0 V
10
1
0.1
TJ = 125°C
0.01
0.001
TJ = 25°C
TJ = −55°C
0.2
0.4
0.6
0.8
1.0
1.2
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
10
TC = 25°C
VGS ≤ 10 V
Single Pulse
1
500 ms
1 ms
10 ms
0.1
1
TJ (initial)= 25°C
0.1
10
TJ (initial)= 100°C
1
RDS(on) Limit
Thermal Limit
Package Limit
0.1
0.01
IPEAK, (A)
ID, DRAIN CURRENT (A)
QT
9
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
1
10
100
1E−4
1E−3
VDS (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
10E−2
NTMYS4D6N04CL
TYPICAL CHARACTERISTICS
100
RqJA (°C/W)
50% Duty Cycle
10
20%
10%
5%
1
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
NTMYS4D6N04CLTWG
Marking
Package
Shipping†
4D6N04CL
LFPAK4
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
LFPAK4 5x6
CASE 760AB
ISSUE C
GENERIC
MARKING DIAGRAM*
XXXXXX
XXXXXX
AWLYW
DOCUMENT NUMBER:
DESCRIPTION:
98AON82777G
LFPAK4 5x6
XXXXXX
A
WL
Y
W
DATE 19 NOV 2019
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
*This information is generic. Please refer
to device data sheet for actual part
marking. Some products may not follow
the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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