NTP5864NG

NTP5864N MOSFET – Power 60 V, 63 A, 12.4 mW Features • • • • Low RDS(on) High Current Capability Avalanche Energy Specified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX (Note 1) 60 V 12.4 mΩ @ 10 V 63 A MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage − Continuous VGS ±20 V Gate−to−Source Voltage − Non−Repetitive (tp = 10 s) VGS ±30 V ID 63 A PD 107 IDM 252 A TJ, TSTG −55 to 175 °C IS 63 A EAS 80 mJ IAS 40 A TL 260 °C Continuous Drain Current − RJC (Note 1) Power Dissipation − RJC (Note 1) Steady State Steady State Pulsed Drain Current TC = 25°C TC = 100°C TC = 25°C Operating Junction and Storage Temperature Source Current (Body Diode) Pulsed Single Pulse Drain−to Source Avalanche Energy − (L = 0.1 mH) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) G S W 54 MARKING DIAGRAM & PIN ASSIGNMENT THERMAL RESISTANCE RATINGS Symbol Max Units Junction−to−Case (Drain) − Steady State (Note 1) RθJC 1.4 °C/W Junction−to−Ambient − Steady State (Note 1) RθJA 33 °C/W 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). TO−220AB CASE 221A STYLE 5 1 2 3 A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package 3 Source 2 Drain ORDERING INFORMATION NTP5864NG June, 2019 − Rev. 1 NTP5864NG AYWW 1 Gate Device © Semiconductor Components Industries, LLC, 2015 4 Drain 4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Parameter D 45 TC = 100°C tp = 10 s N−Channel 1 Package Shipping TO−220 (Pb−Free) 50 Units / Rail Publication Order Number: NTP5864N/D NTP5864N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 A 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS V 58 Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 60 V TJ = 25°C Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 A mV/°C 1.0 A ±100 nA 4.0 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance VGS(TH)/TJ 2.0 −10 mV/°C RDS(on) VGS = 10 V, ID = 20 A 10.2 12.4 gFS VDS = 15 V, ID = 20 A 10 S 1680 pF m CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = 0 V, f = 1.0 MHz, VDS = 25 V 189 124 nC Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 10 Rg 0.5  10 ns Gate Resistance 31 VGS = 10 V, VDS = 48 V, ID = 20 A 2.0 7.3 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) VGS = 10 V, VDD = 48 V, ID = 20 A, RG = 2.5  tf 6.4 18 4.6 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.94 TJ = 125°C 0.84 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 40 A 24 VGS = 0 V, dISD/dt = 100 A/s, IS = 20 A QRR www.onsemi.com 2 V ns 16 7.9 20 2. Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. 1.2 nC NTP5864N TYPICAL CHARACTERISTICS 125 VGS = 10 V 7.5 V TJ = 25°C VDS ≥ 10 V 7V 100 6.5 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 125 5.5 V 75 5.0 V 50 4.5 V 25 100 75 50 TJ = 25°C 25 TJ = 125°C 0 1 2 3 4 0 5 2 4 3 5 6 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0.030 ID = 20 A TJ = 25°C 0.025 0.020 0.015 7 0.0115 VGS = 10 V TJ = 25°C 0.0110 0.0105 0.010 0.0100 0.005 0.000 4 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.0095 10 20 25 30 35 40 45 50 55 60 Figure 4. On−Resistance vs. Drain Current 100000 2.2 2.0 15 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate Voltage ID = 20 A VGS = 10 V VGS = 0 V 1.8 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE () RDS(on), DRAIN−TO−SOURCE RESISTANCE () 0 10000 1.6 1.4 1.2 1.0 TJ = 150°C TJ = 125°C 1000 0.8 0.6 −50 −25 0 25 50 75 100 125 150 175 100 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 60 NTP5864N TYPICAL CHARACTERISTICS 10 VGS = 0 V TJ = 25°C 2000 VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 2500 Ciss 1500 1000 500 Coss 0 0 Crss 10 20 30 40 50 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 60 QT 8 6 Qgs 4 2 0 ID = 20 A TJ = 25°C 0 5 10 15 20 25 30 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge 1000 100 VDD = 48 V ID = 20 A VGS = 10 V IS, SOURCE CURRENT (A) td(off) td(on) 10 VGS = 0 V TJ = 25°C 90 100 t, TIME (ns) Qgd tr tf 80 70 60 50 40 30 20 10 1 1 10 100 0.60 0.70 0.80 0.90 1.00 1.10 1.20 RG, GATE RESISTANCE () VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 10. Diode Forward Voltage vs. Current 80 100 s 1 ms 10 ms dc 100 10 s AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (A) 0.50 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1000 10 VGS = 10 V SINGLE PULSE TC = 25°C 1 0.1 0 0.40 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID = 40 A 70 60 50 40 30 20 10 0 25 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE Figure 11. Maximum Rated Forward Biased Safe Operating Area 175 Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature www.onsemi.com 4 NTP5864N TYPICAL CHARACTERISTICS RJC(t) (°C/W) EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 t, PULSE TIME (s) Figure 13. Thermal Response www.onsemi.com 5 0.1 1 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 CASE 221A ISSUE AK DATE 13 JAN 2022 SCALE 1:1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. BASE EMITTER COLLECTOR EMITTER STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE STYLE 7: PIN 1. 2. 3. 4. CATHODE ANODE CATHODE ANODE STYLE 8: PIN 1. 2. 3. 4. CATHODE ANODE EXTERNAL TRIP/DELAY ANODE STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR STYLE 10: PIN 1. 2. 3. 4. GATE SOURCE DRAIN SOURCE STYLE 11: PIN 1. 2. 3. 4. DRAIN SOURCE GATE SOURCE STYLE 12: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED DOCUMENT NUMBER: DESCRIPTION: 98ASB42148B TO−220 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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