NTR0202PL_06

NTR0202PL Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package Features http://onsemi.com V(BR)DSS −20 V RDS(on) Typ 550 mW @ −10 V P−Channel D ID MAX −400 mA • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • • • • • • • RDSon = 0.80 W, VGS = −10 V RDSon = 1.10 W, VGS = −4.5 V Miniature SOT−23 Surface Mount Package Saves Board Space Pb−Free Packages are Available Applications DC−DC Converters Computers Printers PCMCIA Cards Cellular and Cordless Telephones G S MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Continuous Drain Current @ TA = 25°C Pulsed Drain Current (tp ≤ 10 ms) Total Power Dissipation @ TA = 25°C (Note 1) Operating and Storage Temperature Range Thermal Resistance − Junction−to−Ambient Source Current (Body Diode) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 s Symbol VDSS VGS ID IDM PD TJ, Tstg RqJA IS TL Value −20 $20 −0.4 −1.0 225 − 55 to 150 556 0.4 260 Unit V V A mW °C °C/W A °C SOT−23 CASE 318 STYLE 21 MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 PL M G G 1 Gate 2 Source PL = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. ORDERING INFORMATION Device NTR0202PLT1 Package SOT−23 Shipping† 3000 Tape & Reel 3000 Tape & Reel 10,000 Tape & Reel 10,000 Tape & Reel NTR0202PLT1G SOT−23 (Pb−Free) NTR0202PLT3 SOT−23 NTR0202PLT3G SOT−23 (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 4 1 Publication Order Number: NTR0202PL/D NTR0202PL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 V, ID = −10 mA) (Positive Temperature Coefficient) Zero Gate Voltage Drain Current (VDS = −20 V, VGS = 0 V, TJ = 25°C) (VDS = −20 V, VGS = 0 V, TJ = 150°C) Gate−Body Leakage Current (VGS = ± 20 V, VDS = 0 V) ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (VDS = VGS, ID = −250 mA) (Negative Temperature Coefficient) Static Drain−to−Source On−Resistance (VGS = −10 V, ID = −200 mA) (VGS = −4.5 V, ID = −50 mA) Forward Transconductance (VDS = −10 V, ID = −200 mA) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Total Gate Charge Gate−Source Charge Gate−Drain Charge (VDS = −15 V, ID = −200 mA, VGS = −10 V) (VDD = −15 V, ID = −200 mA, VGS = −10 V, RG = 6.0 W) td(on) tr td(off) tf QTOT QGS QGD VSD 3.0 6.0 18 4 2.18 0.41 0.40 nC ns (VDS = −5.0 V, VGS = 0 V, F = 1.0 MHz) Ciss Coss Crss 70 74 26 pF VGS(th) −1.1 −1.9 3.0 0.55 0.80 0.5 −2.3 V mV/°C W V(BR)DSS −20 V mV/°C −1.0 −10 ±100 mA Symbol Min Typ Max Unit 33 IDSS IGSS nA RDS(on) 0.80 1.10 gfs Mhos BODY−DRAIN DIODE CHARACTERISTICS (Note 2) Diode Forward Voltage (Note 2) (IS = −400 mA, VGS = 0 V) (IS = −400 mA, VGS = 0 V, TJ = 150°C) Reverse Recovery Time (IS = −1.0 A, VGS = 0 V, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge (IS = −1.0 A, VGS = 0 V, dIS/dt = 100 A/ms) −0.8 −0.65 11.8 9 3 0.007 mC −1.0 V trr ta tb QRR ns 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperature. http://onsemi.com 2 NTR0202PL 0.75 −ID, DRAIN CURRENT (AMPS) −6 V 0.5 −5.5 V −5 V −3.5 V −3 V −4 V −ID, DRAIN CURRENT (AMPS) VGS = −10 V TJ = 25°C 1 VDS ≥ −10 V 0.75 TJ = 125°C 0.5 TJ = 25°C 0.25 −4.5 V 0.25 −2.5 V 0 TJ = 40°C 0 0.25 0.5 0.75 1.0 0 0 1 2 3 4 5 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 1.5 TJ = 150°C 1.0 0.75 VGS = −4.5 V VGS = −10 V 1 TJ = 25°C 0.5 TJ = 40°C 0.5 0.25 0 0.125 0.25 0.375 0.5 0 0.125 0.25 0.375 0.5 0.625 0.75 0.875 1.0 −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current and Gate Voltage 1000 VGS = 0 V TJ = 150°C −IDSS, LEAKAGE (nA) 100 2.5 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 2 1.5 1 0.5 0 −40 ID = −0.05 A VGS = −4.5 V ID = −0.2 A VGS = −10 V 10 1 TJ = 25°C 0.1 −15 10 35 60 85 110 135 150 2 6 10 14 18 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 3 NTR0202PL 100 Ciss 80 C, CAPACITANCE (pF) 60 40 Coss 20 Crss 0 10 5 −VGS 0 5 −VDS 10 15 Crss Ciss TJ = 25°C 10 QT 7.5 Ciss Q1 2.5 Crss 0 0 0.5 1 1.5 TJ = 25°C ID = −0.4 A 2 Q2 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.9 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 5 20 −GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 1 −IS, SOURCE CURRENT (AMPS) 100 VDD = −16 V ID = −0.2 A VGS = −4.5 V t, TIME (ns) td(off) 10 tf VGS = 0 V TJ = 25°C 0.75 0.5 tr td(on) 0.25 1 1 10 RG, GATE RESISTANCE (W) 100 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current http://onsemi.com 4 NTR0202PL PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D 3 SEE VIEW C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. E 1 2 HE c b q 0.25 e A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 5 NTR0202PL/D