NTR3C21NZT3G

NTR3C21NZ MOSFET – Power, Single, N-Channel, SOT-23, 2.4 x 2.9 x 1.0 mm 20 V, 3.6 A www.onsemi.com Features • Advanced Trench Technology • Ultra−Low RDS(on) in SOT−23 Package • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant RDS(on) Max V(BR)DSS 24 mW @ 4.5 V 26 mW @ 3.7 V 20 V Applications 33 mW @ 2.5 V 55 mW @ 1.8 V N−Channel MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±8 V ID 3.6 A Power Dissipation (Note 1) 3.6 A 29 mW @ 3.3 V • Power Load Switch • Power Management Continuous Drain Current (Note 1) ID MAX Steady State TA = 25°C TA = 85°C 2.6 t≤5s TA = 25°C 6.5 Steady State TA = 25°C PD t≤5s Pulsed Drain Current 13.2 A TJ, TSTG −55 to 150 °C Source Current (Body Diode) (Note 2) IS 2.2 A Lead Temperature for Soldering Purposes (1/8 in from case for 10 s) TL 260 °C Operating Junction and Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter S 2 1 MARKING DIAGRAM & PIN ASSIGNMENT 1.56 IDM tp = 10 ms 3 G W 0.47 D Symbol Max Unit Junction−to−Ambient – Steady State (Note 1) RqJA 264 °C/W Junction−to−Ambient – t ≤ 5 s (Note 1) RqJA 80 Drain 3 SOT−23 CASE 318 STYLE 21 1 Gate 2 Source TRY = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† NTR3C21NZT1G SOT−23 (Pb−Free) 3000 / Tape & Reel NTR3C21NZT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel Device 1. Surface−mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces). 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. TRY MG G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 June, 2019 − Rev. 2 1 Publication Order Number: NTR3C21NZ/D NTR3C21NZ ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 20 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current 21.6 ID = 250 mA, ref to 25°C VGS = 0 V, VDS = 20 V V mV/°C TJ = 25°C 1.0 mA TJ = 85°C 5.0 mA ±10 mA IGSS VDS = 0 V, VGS = ±8 V VGS(TH) VGS = VDS, ID = 250 mA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance gFS 0.45 1.0 2.7 VGS = 4.5 V ID = 5 A 18 24 VGS = 3.7 V ID = 4 A 18.5 26 VGS = 3.3 V ID = 3 A 19 29 VGS = 2.5 V ID = 2 A 20 33 VGS = 1.8 V ID = 1 A 25 55 VDS = 5 V, ID = 3 A V mV/°C mW 20 S pF CHARGES AND CAPACITANCES Input Capacitance Ciss 1540 Output Capacitance Coss 105 Reverse Transfer Capacitance Crss 86 Total Gate Charge QG(TOT) 17.8 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 0.8 td(on) 7.0 VGS = 0 V, f = 1.0 MHz, VDS = 16 V VGS = 4.5 V, VDS = 16 V, ID = 5 A nC 2.1 3.0 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(off) VGS = 4.5 V, VDS = 16 V, ID = 5 A, RG = 6.0 W tf ns 14 420 4670 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 2.0 A TJ = 25°C 0.7 TJ = 125°C 0.56 1.0 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTR3C21NZ TYPICAL CHARACTERISTICS VGS = 1.8 to 4.5 V VGS = 1.5 V 8 7 VGS = 1.2 V 6 5 4 3 2 1 0 ID, DRAIN CURRENT (A) 10 9 0 0.5 1.0 1.5 2.0 9 8 7 6 5 4 TJ = 25°C 3 2 TJ = 125°C 0 0.8 1.0 1.2 1.4 35 30 25 20 15 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VGS, GATE−TO−SOURCE VOLTAGE (V) 1.6 30 28 TJ = 25°C 26 VGS = 1.8 V 24 22 VGS = 2.5 V 20 VGS = 4.5 V 18 16 14 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 4.5 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.E+04 VGS = 4.5 V ID = 5 A 1.4 1.3 TJ = 125°C IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 0.6 Figure 2. Transfer Characteristics 40 1.E+03 1.2 1.1 1.0 TJ = 85°C 1.E+02 0.9 0.8 0.7 0.6 0.5 −50 0.4 Figure 1. On−Region Characteristics TJ = 25°C ID = 5 A 1.7 1.6 1.5 0.2 TJ = −55°C VGS, GATE−TO−SOURCE VOLTAGE (V) 45 1.0 VDS = 10 V VDS, DRAIN−TO−SOURCE VOLTAGE (V) 50 10 12 11 10 1 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 12 11 −25 0 25 50 75 100 125 150 1.E+01 5 7 9 11 13 15 17 19 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 NTR3C21NZ C, CAPACITANCE (pF) 1.E+04 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS VGS = 0 V TJ = 25°C f = 1 MHz CISS 1.E+03 COSS CRSS 1.E+02 1.E+01 0 2 4 6 8 10 12 14 16 18 20 5.0 VDS = 16 V TJ = 25°C ID = 5 A 4.5 4.0 3.5 3.0 2.5 2.0 QGS 1.5 QGD 1.0 0.5 0 0 2 4 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 6 8 10 12 14 18 16 20 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge 10,000 10 td(off) VGS = 4.5 V VDS = 16 V ID = 5 A 100 tr td(on) 10 1 1 10 1 TJ = 125°C 0.1 100 TJ = −55°C TJ = 25°C 0.3 0.5 0.4 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 ID, DRAIN CURRENT (A) t, TIME (ns) 1000 IS, SOURCE CURRENT (A) tf 10 100 ms 1 ms 1 10 ms 0.1 0.01 RDS(on) Limit Thermal Limit Package Limit 0.01 0.1 1 DC 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 4 100 NTR3C21NZ TYPICAL CHARACTERISTICS 1000 R(t) (°C/W) 100 50% Duty Cycle 20% 10 10% 5% 1 0.1 2% 1% Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 12. FET Thermal Response www.onsemi.com 5 1 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. 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