NTR4501NT1

NTR4501N, NVR4501N MOSFET – Power, Single, N-Channel, SOT-23 20 V, 3.2 A Features • • • • • Leading Planar Technology for Low Gate Charge / Fast Switching 2.5 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint NVR Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS 20 V RDS(on) Typ ID Max (Note 1) 70 mW @ 4.5 V 3.6 A 88 mW @ 2.5 V 3.1 A N−Channel D Applications • Load/Power Switch for Portables • Load/Power Switch for Computing • DC−DC Conversion G MAXIMUM RATINGS (TJ= 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±12 V ID 3.2 A 2.4 A Continuous Drain Current (Note 1) Steady State Steady State Power Dissipation (Note 1) TA = 25°C TA = 85°C Steady State PD 1.25 W tp = 10 ms IDM 10.0 A TJ, Tstg −55 to 150 °C Continuous Source Current (Body Diode) IS 1.6 A Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Pulsed Drain Current Operating Junction and Storage Temperature 3 MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 1 xR1 MG G 2 SOT−23 CASE 318 STYLE 21 1 Gate 2 Source TR1 = Device Code for NTR4501N VR1 = Device Code for NVR4501N M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. THERMAL RESISTANCE RATINGS Parameter S Symbol Max Unit Junction−to−Ambient (Note 1) RqJA 100 °C/W Junction−to−Ambient (Note 2) RqJA 300 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface−mounted on FR4 board using the minimum recommended pad size. ORDERING INFORMATION Device Package Shipping† NTR4501NT1G SOT−23 (Pb−Free) 3000 / Tape & Reel NVR4501NT1G SOT−23 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 June, 2019 − Rev. 15 1 Publication Order Number: NTR4501N/D NTR4501N, NVR4501N Electrical Characteristics (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units V(BR)DSS VGS = 0 V, ID = 250 mA 20 24.5 V 22 mV/°C OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current V(BR)DSS/TJ IDSS VGS = 0 V TJ = 25°C 1.5 mA VDS = 16 V TJ = 85°C 10 mA ±100 nA IGSS VDS = 0 V, VGS = ±12 V VGS(TH) VGS = VDS, ID = 250 mA ON CHARACTERISTICS Gate Threshold Voltage (Note 3) Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance VGS(TH)/TJ RDS(on) gFS 0.65 1.2 −2.3 V mV/°C VGS = 4.5 V, ID = 3.6 A 70 80 VGS = 2.5 V, ID = 3.1 A 88 105 VDS = 5.0 V, ID = 3.6 A 9 mW S CHARGES AND CAPACITANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge 200 VGS = 0 V, f = 1.0 MHz, VDS = 10 V QG(TOT) Gate−to−Source Gate Charge QGS Gate−to−Drain Charge QGD 80 50 2.4 VGS = 4.5 V, VDS = 10 V, ID = 3.6 A pF 6.0 0.5 nC 0.6 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) VGS = 4.5 V, VDS = 10 V, ID = 3.6 A, RG = 6.0 W tf 6.5 13 12 24 12 24 3 6 0.8 1.2 ns SOURCE−DRAIN DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time Discharge Time Reverse Recovery Charge ta tb VGS = 0 V, ISD = 1.6 A V 7.1 VGS = 0 V, dIS/dt = 100 A/ms, IS = 1.6 A QRR 5 1.9 3.0 3. Pulse Test: Pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 ns nC NTR4501N, NVR4501N 8 VGS = 2.0 V T = 25°C J VGS = 10 V VGS = 2.2 V 6.0 5.0 VGS = 3.0 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 7.0 VGS = 1.8 V 4.0 3.0 VGS = 1.6 V 2.0 VGS = 1.4 V 1.0 0 VGS = 1.2 V 0 1 2 3 4 5 6 7 8 9 6 5 4 3 2 TJ = −55°C 0.5 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID = 3.2 A TJ = 25°C 0.20 0.15 0.10 2 4 3 5 6 0.10 TJ = 25°C VGS = 2.5 V 0.09 0.08 VGS = 4.5 V 0.07 0.06 0.05 2 3 4 5 6 ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Gate−to−Source Voltage Figure 4. On−Resistance versus Drain Current and Gate Voltage 1000 VGS = 0 V ID = 3.2 A VGS = 4.5 V 1.2 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 2.5 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 1.4 1.0 0.8 0.6 −50 2.0 Figure 2. Transfer Characteristics 0.25 1 1.5 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics 0.05 TJ = 25°C TJ = 125°C 1 0 10 VDS ≥ 10 V 7 −25 0 25 50 75 100 125 TJ = 150°C 100 10 TJ = 100°C 1.0 150 2 TJ, JUNCTION TEMPERATURE (°C) 4 6 8 10 12 14 16 18 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage www.onsemi.com 3 20 VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 300 250 Ciss 200 150 100 Coss 50 Crss 0 0 2.5 5 7.5 10 12.5 15 20 17.5 5.0 15 QT 4.0 12 VDS VGS 9 3.0 QGD QGS 2.0 TJ = 25°C ID = 3.2 A 0 0.5 Figure 7. Capacitance Variation 1.5 2.0 2.5 0 3.0 Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 100 td(off) IS, SOURCE CURRENT (AMPS) 4 VDS = 10 V ID = 3.2 A VGS = 4.5 V tr 10 t, TIME (ns) 1.0 3 QG, TOTAL GATE CHARGE (nC) DRAIN−TO−SOURCE VOLTAGE (VOLTS) td(on) tf 1 0.1 6 1.0 0 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 350 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) NTR4501N, NVR4501N 1 10 VGS = 0 V TJ = 25°C 3 2 1 0 0.3 100 0.6 1.2 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) RG, GATE RESISTANCE (W) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current TRANSIENT THERMAL RESISTANCE, RqJA (°C/W) 1000 D = 0.5 100 10 1 0.2 0.1 0.05 0.02 0.01 0.1 0.000001 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME, tp (s) Figure 11. Thermal Response www.onsemi.com 4 1 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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