DATA SHEET
www.onsemi.com
Automotive Inductive Load
Driver
3
1
6
2
1
SC−74
CASE 318F
STYLE 7
SOT−23
CASE 318
STYLE 21
NUD3124, SZNUD3124
This micro−integrated part provides a single component solution to
switch inductive loads such as relays, solenoids, and small DC motors
without the need of a free−wheeling diode. It accepts logic level
inputs, thus allowing it to be driven by a large variety of devices
including logic gates, inverters, and microcontrollers.
MARKING DIAGRAMS
JW6 MG
G
JW6 MG
G
Features
• Provides Robust Interface between D.C. Relay Coils and Sensitive
•
•
•
•
•
•
Logic
Capable of Driving Relay Coils Rated up to 150 mA at 12 Volts
Replaces 3 or 4 Discrete Components for Lower Cost
Internal Zener Eliminates Need for Free−Wheeling Diode
Meets Load Dump and other Automotive Specs
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Automotive and Industrial Environment
• Drives Window, Latch, Door, and Antenna Relays
Benefits
•
•
•
•
Reduced PCB Space
Standardized Driver for Wide Range of Relays
Simplifies Circuit Design and PCB Layout
Compliance with Automotive Specifications
Drain (3)
Gate (1)
100 K
ORDERING INFORMATION
Package
Shipping†
NUD3124LT1G
SOT−23
(Pb−Free)
SZNUD3124LT1G
SOT−23
(Pb−Free)
3000 / Tape &
Reel
3000 / Tape &
Reel
NUD3124DMT1G
SC−74
(Pb−Free)
3000 / Tape &
Reel
SZNUD3124DMT1G
SC−74
(Pb−Free)
3000 / Tape &
Reel
Device
INTERNAL CIRCUIT DIAGRAMS
Drain (6)
Drain (3)
10 k
10 k
Source (1)
CASE 318
© Semiconductor Components Industries, LLC, 2002
Gate (5)
100 K
100 K
Source (2)
October, 2022 − Rev. 14
JW6 = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Gate (2)
10 k
JW6 = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
Source (4)
CASE 318F
1
Publication Order Number:
NUD3124/D
NUD3124, SZNUD3124
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Rating
Symbol
Value
Unit
VDSS
Drain−to−Source Voltage – Continuous
(TJ = 125°C)
28
V
VGSS
Gate−to−Source Voltage – Continuous
(TJ = 125°C)
12
V
ID
Drain Current – Continuous
(TJ = 125°C)
150
mA
EZ
Single Pulse Drain−to−Source Avalanche Energy
(For Relay’s Coils/Inductive Loads of 80 W or Higher)
(TJ Initial = 85°C)
250
mJ
PPK
Peak Power Dissipation, Drain−to−Source (Notes 1 and 2)
(TJ Initial = 85°C)
20
W
ELD1
Load Dump Suppressed Pulse, Drain−to−Source (Notes 3 and 4)
(Suppressed Waveform: Vs = 45 V, RSOURCE = 0.5 W, T = 200 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher)
(TJ Initial = 85°C)
80
V
ELD2
Inductive Switching Transient 1, Drain−to−Source
(Waveform: RSOURCE = 10 W, T = 2.0 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher)
(TJ Initial = 85°C)
100
V
ELD3
Inductive Switching Transient 2, Drain−to−Source
(Waveform: RSOURCE = 4.0 W, T = 50 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher)
(TJ Initial = 85°C)
300
V
Rev−Bat
Reverse Battery, 10 Minutes (Drain−to−Source)
(For Relay’s Coils/Inductive Loads of 80 W or more)
−14
V
Dual−Volt
Dual Voltage Jump Start, 10 Minutes (Drain−to−Source)
28
V
2,000
V
ESD
Human Body Model (HBM)
According to EIA/JESD22/A114 Specification
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Nonrepetitive current square pulse 1.0 ms duration.
2. For different square pulse durations, see Figure 2.
3. Nonrepetitive load dump suppressed pulse per Figure 3.
4. For relay’s coils/inductive loads higher than 80 W, see Figure 4.
THERMAL CHARACTERISTICS
Symbol
Rating
Value
Unit
TA
Operating Ambient Temperature
−40 to 125
°C
TJ
Maximum Junction Temperature
150
°C
−65 to 150
°C
TSTG
Storage Temperature Range
PD
Total Power Dissipation (Note 5)
Derating above 25°C
SOT−23
225
1.8
mW
mW/°C
PD
Total Power Dissipation (Note 5)
Derating above 25°C
SC−74
380
3.0
mW
mW/°C
SOT−23
SC−74
556
329
°C/W
RqJA
Thermal Resistance Junction–to–Ambient (Note 5)
5. Mounted onto minimum pad board.
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2
NUD3124, SZNUD3124
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Min
Typ
Max
Unit
VBRDSS
28
34
38
V
−
−
−
−
−
−
−
−
0.5
1.0
50
80
−
−
−
−
−
−
−
−
60
80
90
110
1.3
1.3
1.8
−
2.0
2.0
−
−
−
−
−
−
−
−
1.4
1.7
0.8
1.1
150
140
200
−
−
−
gFS
−
500
−
mmho
Input Capacitance
(VDS = 12 V, VGS = 0 V, f = 10 kHz)
Ciss
−
32
−
pf
Output Capacitance
(VDS = 12 V, VGS = 0 V, f = 10 kHz)
Coss
−
21
−
pf
Transfer Capacitance
(VDS = 12 V, VGS = 0 V, f = 10 kHz)
Crss
−
8.0
−
pf
tPHL
tPLH
−
−
890
912
−
−
tPHL
tPLH
−
−
324
1280
−
−
tf
tr
−
−
2086
708
−
−
tf
tr
−
−
556
725
−
−
Characteristic
OFF CHARACTERISTICS
Drain to Source Sustaining Voltage
(ID = 10 mA)
Drain to Source Leakage Current
(VDS = 12 V, VGS = 0 V)
(VDS = 12 V, VGS = 0 V, TJ = 125°C)
(VDS = 28 V, VGS = 0 V)
(VDS = 28 V, VGS = 0 V, TJ = 125°C)
IDSS
Gate Body Leakage Current
(VGS = 3.0 V, VDS = 0 V)
(VGS = 3.0 V, VDS = 0 V, TJ = 125°C)
(VGS = 5.0 V, VDS = 0 V)
(VGS = 5.0 V, VDS = 0 V, TJ = 125°C)
IGSS
mA
mA
ON CHARACTERISTICS
Gate Threshold Voltage
(VGS = VDS, ID = 1.0 mA)
(VGS = VDS, ID = 1.0 mA, TJ = 125°C)
VGS(th)
Drain to Source On−Resistance
(ID = 150 mA, VGS = 3.0 V)
(ID = 150 mA, VGS = 3.0 V, TJ = 125°C)
(ID = 150 mA, VGS = 5.0 V)
(ID = 150 mA, VGS = 5.0 V, TJ = 125°C)
RDS(on)
Output Continuous Current
(VDS = 0.25 V, VGS = 3.0 V)
(VDS = 0.25 V, VGS = 3.0 V, TJ = 125°C)
IDS(on)
Forward Transconductance
(VDS = 12 V, ID = 150 mA)
V
W
mA
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
Propagation Delay Times:
High to Low Propagation Delay; Figure 1, (VDS = 12 V, VGS = 3.0 V)
Low to High Propagation Delay; Figure 1, (VDS = 12 V, VGS = 3.0 V)
High to Low Propagation Delay; Figure 1, (VDS = 12 V, VGS = 5.0 V)
Low to High Propagation Delay; Figure 1, (VDS = 12 V, VGS = 5.0 V)
Transition Times:
Fall Time; Figure 1, (VDS = 12 V, VGS = 3.0 V)
Rise Time; Figure 1, (VDS = 12 V, VGS = 3.0 V)
Fall Time; Figure 1, (VDS = 12 V, VGS = 5.0 V)
Rise Time; Figure 1, (VDS = 12 V, VGS = 5.0 V)
ns
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NUD3124, SZNUD3124
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
VIH
Vin
50%
0V
tPHL
tPLH
VOH
90%
Vout
50%
10%
VOL
tr
tf
Figure 1. Switching Waveforms
Ppk, PEAK SURGE POWER (W)
25
20
15
10
5
0
1
10
100
PW, PULSE WIDTH (ms)
Figure 2. Maximum Non−repetitive Surge
Power versus Pulse Width
Load Dump Pulse Not Suppressed:
VR = 13.5 V Nominal ±10%
VS = 60 V Nominal ±10%
T = 300 ms Nominal ±10%
TR = 1 − 10 ms ±10%
Load Dump Pulse Suppressed:
NOTE: Max. Voltage DUT is exposed to is
NOTE: approximately 45 V.
VS = 30 V ±20%
T = 150 ms ±20%
TR
90%
10% of Peak;
Reference = VR, IR
10%
VR, IR
Figure 3. Load Dump Waveform Definition
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4
VS
T
NUD3124, SZNUD3124
14
IDSS, DRAIN LEAKAGE (mA)
140
VS, LOAD DUMP (VOLTS)
120
100
80
60
40
80 110
140
170
200
230
260
290
VDS = 28 V
8
6
4
2
−25
0
25
50
75
100
RELAY’S COIL (W)
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Load Dump Capability versus
Relay’s Coil dc Resistance
Figure 5. Drain−to−Source Leakage versus
Junction Temperature
125
34.8
BVDSS BREAKDOWN VOLTAGE (V)
70
60
VGS = 5 V
50
40
VGS = 3 V
30
20
−50
1
−25
0
25
50
100
75
125
34.6
34.4
34.2
ID = 10 mA
34.0
33.8
33.6
33.4
−50
−25
25
0
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Gate−to−Source Leakage versus
Junction Temperature
Figure 7. Breakdown Voltage versus Junction
Temperature
1
VGS = 5 V
0.1
0.01
VGS = 3 V
VGS = 2.5 V
ID DRAIN CURRENT (A)
IGSS GATE LEAKAGE (mA)
10
0
−50
320 350
80
ID DRAIN CURRENT (A)
12
VGS = 2 V
1E−04
125 °C
0.01
0.001
85 °C
1E−04
1E−06
25 °C
1E−05
VGS = 1 V
1E−08
1E−10
0.0
VDS = 0.8 V
−40 °C
1E−06
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1E−07
0.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 8. Output Characteristics
Figure 9. Transfer Function
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5
4.5
5.0
1800
ID = 0.25 A
VGS = 3.0 V
1600
1400
1200
ID = 0.15 A
VGS = 3.0 V
1000
800
ID = 0.15 A
VGS = 5.0 V
600
400
−50
−25
0
25
50
100
75
125
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. On Resistance Variation versus
Junction Temperature
RDS(ON), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(ON), DRAIN−TO−SOURCE RESISTANCE (mW)
NUD3124, SZNUD3124
0.20
0.18
ID = 250 mA
0.16
0.14
0.12
125 °C
0.10
85 °C
25 °C
−40 °C
0.08
0.06
0.04
0.02
0.00
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 11. On Resistance Variation versus
Gate−to−Source Voltage
VZ ZENER CLAMP VOLTAGE (V)
36.0
35.5
35.0
34.5
34.0
−40 °C
25 °C
85 °C
33.5
33.0
125 °C
32.5
32.0
0.1
1.0
10
100
1000
IZ, ZENER CURRENT (mA)
Figure 12. Zener Clamp Voltage versus Zener
Current
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
D = 0.5
0.2
0.1
0.1
0.05
Pd(pk)
0.02
0.01
0.01
0.001
0.01
PW
t2
PERIOD
DUTY CYCLE = t1/t2
SINGLE PULSE
0.1
t1
1.0
10
100
1000
10,000
t1, PULSE WIDTH (ms)
Figure 13. Transient Thermal Response for NUD3124LT1G
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6
100,000
1,000,000
NUD3124, SZNUD3124
APPLICATIONS INFORMATION
12 V Battery
−
+
NC
NO
Relay, Vibrator,
or
Inductive Load
Drain (3)
Gate (1)
Micro
Processor
Signal
for
Relay
10 k
100 K
NUD3124
Source (2)
Figure 14. Applications Diagram
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
SEE VIEW C
c
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXMG
G
1
3X
2.90
3X
XXX = Specific Device Code
M = Date Code
G
= Pb−Free Package
0.90
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
STYLE 12:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. CATHODE
3. CATHODE−ANODE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. NO CONNECTION PIN 1. CATHODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
2. ANODE
3. GATE
3. ANODE
3. CATHODE−ANODE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−74
CASE 318F
ISSUE P
6
1
SCALE 2:1
DATE 07 OCT 2021
GENERIC
MARKING DIAGRAM*
XXX MG
G
XXX
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLE 1:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. ANODE
6. CATHODE
STYLE 2:
PIN 1. NO CONNECTION
2. COLLECTOR
3. EMITTER
4. NO CONNECTION
5. COLLECTOR
6. BASE
STYLE 3:
PIN 1. EMITTER 1
2. BASE 1
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
6. COLLECTOR 1
STYLE 4:
PIN 1. COLLECTOR 2
2. EMITTER 1/EMITTER 2
3. COLLECTOR 1
4. EMITTER 3
5. BASE 1/BASE 2/COLLECTOR 3
6. BASE 3
STYLE 5:
PIN 1. CHANNEL 1
2. ANODE
3. CHANNEL 2
4. CHANNEL 3
5. CATHODE
6. CHANNEL 4
STYLE 7:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
STYLE 8:
PIN 1. EMITTER 1
2. BASE 2
3. COLLECTOR 2
4. EMITTER 2
5. BASE 1
6. COLLECTOR 1
STYLE 9:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
STYLE 10:
PIN 1. ANODE/CATHODE
2. BASE
3. EMITTER
4. COLLECTOR
5. ANODE
6. CATHODE
STYLE 11:
PIN 1. EMITTER
2. BASE
3. ANODE/CATHODE
4. ANODE
5. CATHODE
6. COLLECTOR
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42973B
SC−74
STYLE 6:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
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