NVBG020N090SC1

MOSFET – SiC Power, Single N-Channel, D2PAK-7L 900 V, 20 mW, 112 A NVBG020N090SC1 Features • • • • • • • Typ. RDS(on) = 20 mW @ VGS = 15 V Typ. RDS(on) = 16 mW @ VGS = 18 V Ultra Low Gate Charge (typ. QG(tot) = 200 nC) Low Effective Output Capacitance (typ. Coss = 295 pF) 100% Avalanche Tested Qualified According to AEC−Q101 RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 900 V 28 mW @ 15 V 112 A Drain (TAB) Typical Applications • Automotive On Board Charger • Automotive DC/DC Converter for EV/HEV Gate (Pin 1) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 900 V Gate−to−Source Voltage VGS +22/−8 V TC < 175°C VGSop +15/−5 V TC = 25°C ID 112 A PD 477 W ID 9.8 A PD 3.7 W TA = 25°C IDM 448 A TA = 25°C, tp = 10 ms, RG = 4.7 W IDSC 854 A MARKING DIAGRAM TJ, Tstg −55 to +175 °C AYWWZZ NVBG 020N090SC1 IS 148 A EAS 264 mJ TL 245 °C Parameter Recommended Operation Values of Gate − Source Voltage Continuous Drain Current RqJC (Note 2) Steady State Power Dissipation RqJC (Note 2) Continuous Drain Current RqJA (Notes 1, 2) Steady State TA = 25°C Power Dissipation RqJA (Notes 1, 2) Pulsed Drain Current (Note 3) Single Pulse Surge Drain Current Capability (Note 4) Operating Junction and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL = 23 Apk, L = 1 mH) (Note 5) Maximum Lead Temperature for Soldering, 1/8″ from Case for 10 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on a FR−4 board using1 in2 pad of 2 oz copper. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 3. Repetitive rating, limited by max junction temperature. 4. Peak current might be limited by transconductance. 5. EAS of 264 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 23 A, VDD = 100 V, VGS = 15 V. © Semiconductor Components Industries, LLC, 2019 April, 2021 − Rev. 2 1 Driver Source (Pin 2) Power Source (Pins 3, 4, 5, 6, 7) N−CHANNEL MOSFET D2PAK−7L CASE 418BJ A = Assembly Location Y = Year WW = Work Week ZZ = Lot Traceability NVBG020N090SC1 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Publication Order Number: NVBG020N090SC1/D NVBG020N090SC1 Table 1. THERMAL CHARACTERISTICS Parameter Symbol Max Units Thermal Resistance Junction−to−Case (Note 2) RθJC 0.31 °C/W Thermal Resistance Junction−to−Ambient (Notes 1, 2) RθJA 41 °C/W Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 1 mA 900 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 1 mA, refer to 25°C Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS VGS = 0 V VDS = 900 V V 440 mV/°C TJ = 25°C 100 mA TJ = 175°C 250 mA ±1 mA 4.3 V IGSS VGS = +22/−8 V, VDS = 0 V VGS(TH) VGS = VDS , ID = 20 mA ON CHARACTERISTICS Gate Threshold Voltage Recommended Gate Voltage Drain−to−Source On Resistance Forward Transconductance VGOP RDS(on) gFS 1.8 2.6 −5 +15 V 28 mW VGS = 15 V, ID = 60 A, TJ = 25°C 20 VGS = 18 V, ID = 60 A, TJ = 25°C 16 VGS = 15 V, ID = 60 A, TJ = 175°C 27 VDS = 20 V, ID = 60 A 49 S VGS = 0 V, f = 1 MHz, VDS = 450 V 4415 pF CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 295 25 VGS = −5/15 V, VDS = 720 V, ID = 60 A Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS 76 Gate−to−Drain Charge QGD 56 Gate−Resistance nC 200 42 RG f = 1 MHz 1.5 W td(ON) VGS = −5/15 V, VDS = 720 V, ID = 60 A, RG = 2.5 W, Inductive Load 39 ns SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time tr 52 td(OFF) 58 tf 13 Turn−On Switching Loss EON 1551 Turn−Off Switching Loss EOFF 179 Total Switching Loss ETOT 1730 Fall Time mJ DRAIN−SOURCE DIODE CHARACTERISTICS ISD VGS = −5 V, TJ = 25°C 148 A Pulsed Drain−Source Diode Forward Current (Note 3) ISDM VGS = −5 V, TJ = 25°C 448 A Forward Diode Voltage VSD VGS = −5 V, ISD = 30 A, TJ = 25°C Continuous Drain−Source Diode Forward Current www.onsemi.com 2 3.7 V NVBG020N090SC1 Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Reverse Recovery Time tRR Reverse Recovery Charge QRR VGS = −5/15 V, ISD = 60 A, dIS/dt = 1000 A/ms, VDS = 720 V Reverse Recovery Energy Peak Reverse Recovery Current Min Typ Max Unit DRAIN−SOURCE DIODE CHARACTERISTICS 28 ns 186 nC EREC 4 mJ IRRM 14 A Charge time Ta 17 ns Discharge time Tb 11 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NVBG020N090SC1 TYPICAL CHARACTERISTICS 12 V 150 100 10 V 9V 50 6V 0 4 13 V VGS = 15 V RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE ID, DRAIN CURRENT (A) 200 4 2 0 6 7V 8 10 VGS = 10 V 3 12 V 2 13 V 15 V 1 0 30 0 60 120 90 150 VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 1.9 RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE 160 RDS(on), ON−RESISTANCE (mW) ID = 60 A VGS = 15 V 1.7 1.5 1.3 1.1 0.9 0.7 −75 −50 −25 0 25 50 75 80 40 TJ = 150°C TJ = 25°C 5 15 10 20 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. On−Resistance Variation with Temperature Figure 4. On−Resistance vs. Gate−to−Source Voltage TJ = 175°C 300 TJ = −55°C 80 TJ = 25°C 60 40 20 VDS = 20 V 3 120 TJ, JUNCTION TEMPERATURE (°C) 100 0 ID = 60 A 0 100 125 150 175 IS, REVERSE DRAIN CURRENT (A) 120 ID, DRAIN CURRENT (A) 9V 6 9 12 15 VGS = −5 V TJ = −55°C TJ = 175°C 30 TJ = 25°C 3 1 3 5 7 VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Diode Forward Voltage vs. Current www.onsemi.com 4 9 NVBG020N090SC1 TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 15 50K VDD = 180 V ID = 60 A 10K CAPACITANCE (pF) VDD = 540 V 10 VDD = 720 V 5 0 −5 1K 50 100 150 Crss 10 200 0.1 1 100 10 Figure 7. Gate−to−Source Voltage vs. Total Charge Figure 8. Capacitance vs. Drain−to−Source Voltage 140 VGS = 15 V 120 TJ = 25°C 10 TJ = 150°C 1 0.001 0.01 0.1 1 10 80 60 40 0 100 RqJC = 0.31°C/W 25 50 75 100 TC, CASE TEMPERATURE (°C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs. Case Temperature 100K P(PK), PEAK TRANSIENT POWER (w) 10 10 ms This area is limited by RDS(on) 100 ms Single Pulse TJ = Max Rated RqJC = 0.31°C/W TC = 25°C 0.1 150 125 tAV, TIME IN AVALANCHE (ms) 100 0.1 100 20 Typical performance based on characterization data 1000 1 800 VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) f = 1 MHz VGS = 0 V Qg, GATE CHARGE (nC) 100 ID, DRAIN CURRENT (A) Coss 100 1 0 Ciss 1 1 ms 10 ms 100 ms 10 100 1000 5000 Single Pulse RqJC = 0.31°C/W TC = 25°C 10K 1K 100 0.00001 0.0001 0.001 0.01 VDS, DRAIN−TO−SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 175 0.1 NVBG020N090SC1 TYPICAL CHARACTERISTICS r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.001 0.01 Single Pulse P DM t1 t2 0.00001 0.001 0.0001 Notes: ZqJC (t) = r(t) x RqJC RqJC = 0.31°C/W Peak TJ = PDM x ZqJC (t) + TC Duty Cycle, D = t1/t2 0.01 0.1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction−to−Ambient Transient Thermal Response Curve DEVICE ORDERING INFORMATION Device Package Shipping† NVBG020N090SC1 D2PAK−7L 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK7 (TO−263−7L HV) CASE 418BJ ISSUE B DATE 16 AUG 2019 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON84234G D2PAK7 (TO−263−7L HV) Electronic versions are uncontrolled except when accessed directly from the Document Repository. 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