NVH4L160N120SC1

MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 160 mW, 17.3 A NVH4L160N120SC1 Features • • • • • • Typ. RDS(on) = 160 mW Ultra Low Gate Charge (QG(tot) = 34 nC) High Speed Switching with Low Capacitance (Coss = 49.5 pF) 100% Avalanche Tested AEC−Q101 Qualified and PPAP Capable This Device is Pb−Free and is RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 1200 V 224 mW @ 20 V 17.3 A D Typical Applications • Automotive On Board Charger • Automotive DC/DC Converter for EV/HEV G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 1200 V Gate−to−Source Voltage VGS −15/+25 V S1: Kelvin Source S2: Power Source S1 S2 N−CHANNEL MOSFET Recommended Operation Values of Gate−to−Source Voltage TC < 175°C VGSop −5/+20 V Steady State TC = 25°C ID 17.3 A PD 111 W ID 12.3 A PD 55.5 W TO247−4L CASE 340CJ IDM 69 A MARKING DIAGRAM IDSC 140 A TJ, Tstg −55 to +175 °C IS 11 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 16 A, L = 5 mH) (Note 4) EAS 128 mJ Maximum Lead Temperature for Soldering (1/8″ from case for 5 s) TL 300 °C Continuous Drain Current (Note 2) Power Dissipation (Note 2) Continuous Drain Current (Notes 1, 2) Steady State TC = 100°C Power Dissipation (Notes 1, 2) Pulsed Drain Current (Note 3) TA = 25°C Single Pulse Surge TA = 25°C, tp = 10 ms, Drain Current Capability RG = 4.7 W Operating Junction and Storage Temperature Range Source Current (Body Diode) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. JA is constant value to follow guide table of LV/HV discrete final datasheet generation . 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 3. Repetitive rating, limited by max junction temperature. 4. EAS of 128 mJ is based on starting TJ = 25°C; L = 5 mH, IAS = 16 A, VDD = 120 V, VGS = 18 V. © Semiconductor Components Industries, LLC, 2019 May, 2021 − Rev. 3 1 D S2 S1 G AYWWZZ NVH4L160 N120SC1 A = Assembly Location Y = Year WW = Work Week ZZ = Lot Traceability NVH4L160N120SC1 = Specific Device Code ORDERING INFORMATION Device Package Shipping NVH4L160N120SC1 TO247−4L 30 ea / Tube Publication Order Number: NVH4L160N120SC1/D NVH4L160N120SC1 THERMAL RESISTANCE MAXIMUM RATINGS Symbol Max Unit Junction−to−Case − Steady State (Note 2) Parameter RqJC 1.35 °C/W Junction−to−Ambient − Steady State (Notes 1, 2) RqJA 40 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit 1200 − − V ID = 1 mA, referenced to 25°C − 0.6 − V/°C VGS = 0 V, VDS = 1200 V TJ = 25°C − − 100 mA TJ = 175°C − − 1 mA VGS = +25/−15 V, VDS = 0 V − − ±1 mA VGS = VDS, ID = 2.5 mA 1.8 3.1 4.3 V −5 − +20 V VGS = 20 V, ID = 12 A, TJ = 25°C − 160 224 mW VGS = 20 V, ID = 12 A, TJ = 175°C − 271 377 VDS = 20 V, ID = 12 A − 3.2 − S VGS = 0 V, f = 1 MHz, VDS = 800 V − 665 − pF − 49.5 − − 4.3 − − 34 − − 6 − OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS IGSS VGS = 0 V, ID = 1 mA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Recommended Gate Voltage Drain−to−Source On Resistance Forward Transconductance VGS(TH) VGOP RDS(on) gFS CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = −5/20 V, VDS = 600 V, ID = 16 A nC Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS − 12.5 − Gate−to−Drain Charge QGD − 9.6 − Gate−Resistance RG f = 1 MHz − 1.4 − W VGS = −5/20 V, VDS = 800 V, ID = 16 A, RG = 6 W inductive load − 11 20 ns − 10 20 − 14 25 tf − 7 14 Turn−On Switching Loss EON − 104 − Turn−Off Switching Loss EOFF − 32 − Etot − 136 − − − 11 − − 69 − 4 − SWITCHING CHARACTERISTICS, VGS = 10 V Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Total Switching Loss td(ON) tr td(OFF) mJ DRAIN−SOURCE DIODE CHARACTERISTICS Continuous Drain−Source Diode Forward Current ISD Pulsed Drain−Source Diode Forward Current (Note 3) ISDM Forward Diode Voltage VSD VGS = −5 V, TJ = 25°C VGS = −5 V, ISD = 6 A, TJ = 25°C www.onsemi.com 2 A V NVH4L160N120SC1 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued) Parameter Symbol Test Condition Min Typ Max Unit − 15 − ns − 47 − nC DRAIN−SOURCE DIODE CHARACTERISTICS Reverse Recovery Time tRR VGS = −5/20 V, ISD = 16 A, dIS/dt = 1000 A/ms Reverse Recovery Charge QRR Reverse Recovery Energy EREC − 3.9 − mJ Peak Reverse Recovery Current IRRM − 6.6 − A Charge time Ta − 7.0 − ns Discharge time Tb − 7.4 − ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NVH4L160N120SC1 TYPICAL CHARACTERISTICS 40 VGS = 19 V VGS = 18 V VGS = 17 V 30 VGS = 20 V VGS = 16 V 20 VGS = 15 V VGS = 12 V 10 0 VGS = 10 V 0 1.9 RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE 4.0 4 2 6 10 8 2.5 2.0 VGS = 15 V VGS = 17 V VGS = 18 V 1.5 VGS = 20 V 1.0 VGS = 19 V 10 20 30 40 Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 700 1.1 0.9 0.7 −75 −50 −25 0 25 50 75 100 ID = 12 A 600 500 400 TJ = 150°C 300 200 TJ = 25°C 100 0 9 125 150 175 10 11 12 13 14 15 16 17 18 19 TJ, JUNCTION TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. On−Resistance Variation with Temperature Figure 4. On−Resistance vs. Gate−to−Source Voltage IS, REVERSE DRAIN CURRENT (A) 25 VDS = 20 V ID, DRAIN CURRENT (A) VGS = 16 V Figure 1. On Characteristics 1.3 20 15 10 TJ = 175°C TJ = 25°C 5 TJ = −55°C 2 3.0 ID, DRAIN CURRENT (A) 1.5 0 VGS = 10 V V = 12 V GS VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID = 12 A VGS = 20 V 1.7 3.5 0.5 0 RDS(on), ON−RESISTANCE (mW) ID, DRAIN CURRENT (A) 50 4 6 8 10 12 14 100 VGS = −5 V TJ = 175°C 30 TJ = 25°C TJ = −55°C 3 2 16 3 4 5 6 7 8 VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Diode Forward Voltage vs. Current www.onsemi.com 4 20 9 NVH4L160N120SC1 20 10000 ID = 16 A VDD = 600 V 15 VDD = 400 V C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS VDD = 800 V 10 5 0 −5 0 30 20 10 1 40 0 1 10 100 Figure 7. Gate−to−Source Voltage vs. Total Charge Figure 8. Capacitance vs. Drain−to−Source Voltage 800 20 ID, DRAIN CURRENT (A) TJ = 25°C TJ = 150°C 16 VGS = 20 V 12 8 4 RqJC = 1.35°C/W 0.01 0.1 0 5 1 25 50 75 100 125 150 tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE (°C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs. Case Temperature 175 100000 100 10 10 ms 1 100 ms SINGLE PULSE TJ = MAX RATED RqJC = 1.35°C/W TC = 25°C 1 1 ms 10 ms 100 ms CURVE BENT TO MEASURED DATA 10 100 1000 P(PK), PEAK TRANSIENT POWER (w) IAS, AVALANCHE CURRENT (A) f = 1 MHz VGS = 0 V VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1 0.001 ID, DRAIN CURRENT (A) Crss 10 Qg, GATE CHARGE (nC) 10 0.01 0.1 Coss 100 100 0.1 Ciss 1000 Single Pulse RqJC = 1.35°C/W TC = 25°C 10000 2000 1000 100 10 0.00001 0.0001 0.001 0.01 VDS, DRAIN−TO−SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 0.1 NVH4L160N120SC1 TYPICAL CHARACTERISTICS r(t) NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 0.1 0.01 DUTY CYCLE DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 P DM Single Pulse 0.001 0.00001 t1 t2 0.0001 0.001 Notes: ZqJC (t) = r(t) x RqJC RqJC = 1.35°C/W Peak TJ = PDM x ZqJC (t) + TC Duty Cycle, D = t1 / t2 0.01 t, RECTANGULAR PULSE DURATIONTIME (s) Figure 13. Junction−to−Case Transient Thermal Response Curve www.onsemi.com 6 0.1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−4LD CASE 340CJ ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13852G TO−247−4LD DATE 16 SEP 2019 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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