MOSFET – SiC Power, Single
N-Channel, TO247-3L
900 V, 20 mW, 118 A
NVHL020N090SC1
Features
•
•
•
•
•
•
•
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Typ. RDS(on) = 20 mW @ VGS = 15 V
Typ. RDS(on) = 16 mW @ VGS = 18 V
Ultra Low Gate Charge (typ. QG(tot) = 196 nC)
Low Effective Output Capacitance (typ. Coss = 296 pF)
100% UIL Tested
Qualified According to AEC−Q101
RoHS Compliant
V(BR)DSS
RDS(ON) MAX
ID MAX
900 V
28 mW @ 15 V
118 A
D
Typical Applications
• Automotive On Board Charger
• Automotive DC/DC Converter for EV/HEV
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
S
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
900
V
Gate−to−Source Voltage
VGS
+22/−8
V
TC < 175°C
VGSop
+15/−5
V
TC = 25°C
IDC
118
A
PDC
503
W
IDC
83
A
S
TO−247 LONG LEADS
CASE 340CX
PDC
251
W
MARKING DIAGRAM
TA = 25°C
IDM
472
A
TA = 25°C, tp = 10 ms,
RG = 4.7 W
IDSC
854
A
TJ, Tstg
−55 to
+175
°C
IS
153
A
EAS
264
mJ
Parameter
Recommended Operation Values of Gate − Source Voltage
Continuous Drain
Current RqJC
Steady
State
Power Dissipation
RqJC
Continuous Drain
Current RqJC
Steady
State
TC = 100°C
Power Dissipation
RqJC
Pulsed Drain Current (Note 2)
Single Pulse Surge
Drain Current Capability(Note 3)
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy (IL = 23 Apk, L = 1 mH) (Note 4)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. Peak current might be limited by transconductance.
4. EAS of 264 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 23 A, VDD =
100 V, VGS = 15 V.
© Semiconductor Components Industries, LLC, 2019
April, 2021 − Rev. 2
1
N−CHANNEL MOSFET
G
D
$Y&Z&3&K
NVHL020
N090SC1
$Y
= ON Semiconductor Logo
&Z
= Assembly Plant Code
&3
= Date Code (Year & Week)
&K
= Lot
NVHL020N090SC1 = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
Publication Order Number:
NVHL020N090SC1/D
NVHL020N090SC1
Table 1. THERMAL CHARACTERISTICS
Parameter
Symbol
Max
Units
Thermal Resistance Junction−to−Case (Note 1)
RθJC
0.30
°C/W
Thermal Resistance Junction−to−Ambient (Note 1)
RθJA
40
°C/W
Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 1 mA
900
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
ID = 1 mA, refer to 25°C
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
VGS = 0 V
VDS = 900 V
V
500
mV/°C
TJ = 25°C
100
mA
TJ = 175°C
250
mA
±1
mA
4.3
V
IGSS
VGS = +22/−8 V, VDS = 0 V
VGS(TH)
VGS = VDS , ID = 20 mA
ON CHARACTERISTICS
Gate Threshold Voltage
Recommended Gate Voltage
Drain−to−Source On Resistance
Forward Transconductance
VGOP
RDS(on)
gFS
1.8
2.7
−5
+15
V
28
mW
VGS = 15 V, ID = 60 A, TJ = 25°C
20
VGS = 18 V, ID = 60 A, TJ = 25°C
16
VGS = 15 V, ID = 60 A, TJ = 175°C
27
VDS = 20 V, ID = 60 A
49
S
VGS = 0 V, f = 1 MHz,
VDS = 450 V
4415
pF
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
296
24
VGS = −5/15 V, VDS = 720 V,
ID = 60 A
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
78
Gate−to−Drain Charge
QGD
55
Gate−Resistance
nC
196
42
RG
f = 1 MHz
1.6
W
td(ON)
VGS = −5/15 V, VDS = 720 V,
ID = 60 A, RG = 2.5 W,
Inductive Load
40
ns
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
tr
63
td(OFF)
55
tf
13
Turn−On Switching Loss
EON
2025
Turn−Off Switching Loss
EOFF
201
Total Switching Loss
ETOT
2226
Fall Time
mJ
DRAIN−SOURCE DIODE CHARACTERISTICS
ISD
VGS = −5 V, TJ = 25°C
153
A
Pulsed Drain−Source Diode Forward Current
(Note 2)
ISDM
VGS = −5 V, TJ = 25°C
472
A
Forward Diode Voltage
VSD
VGS = −5 V, ISD = 30 A, TJ = 25°C
Continuous Drain−Source Diode Forward
Current
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2
3.8
V
NVHL020N090SC1
Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Reverse Recovery Time
tRR
Reverse Recovery Charge
QRR
VGS = −5/15 V, ISD = 60 A, dIS/dt =
1000 A/ms, VDS = 720 V
Reverse Recovery Energy
Peak Reverse Recovery Current
Min
Typ
Max
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
28
ns
199
nC
EREC
4
mJ
IRRM
14
A
Charge time
Ta
16
ns
Discharge time
Tb
12
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NVHL020N090SC1
TYPICAL CHARACTERISTICS
4
13 V
VGS = 15 V
RDS(on), NORMALIZED DRAIN−TO−
SOURCE ON−RESISTANCE
ID, DRAIN CURRENT (A)
200
12 V
150
100
10 V
9V
50
6V
0
4
2
0
6
7V
10
8
VGS = 10 V
12 V
3
13 V
2
15 V
1
0
30
0
60
120
90
150
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
1.9
RDS(on), NORMALIZED DRAIN−TO−
SOURCE ON−RESISTANCE
160
RDS(on), ON−RESISTANCE (mW)
ID = 60 A
VGS = 15 V
1.7
1.5
1.3
1.1
0.9
0.7
−75 −50 −25
0
25
50
75
80
40
TJ = 150°C
TJ = 25°C
5
15
10
20
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with
Temperature
Figure 4. On−Resistance vs. Gate−to−Source
Voltage
TJ = 175°C
300
TJ = −55°C
80
TJ = 25°C
60
40
20
VDS = 20 V
3
120
TJ, JUNCTION TEMPERATURE (°C)
100
0
ID = 60 A
0
100 125 150 175
IS, REVERSE DRAIN CURRENT (A)
120
ID, DRAIN CURRENT (A)
9V
6
9
12
15
VGS = −5 V
TJ = −55°C
TJ = 175°C
30
TJ = 25°C
3
1
3
5
7
VGS, GATE−TO−SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
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4
9
NVHL020N090SC1
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
15
50K
VDD = 180 V
ID = 60 A
VDD = 540 V
10K
CAPACITANCE (pF)
VDD = 720 V
10
5
0
−5
1K
50
100
150
Crss
10
200
0.1
1
100
10
Figure 7. Gate−to−Source Voltage vs. Total
Charge
Figure 8. Capacitance vs. Drain−to−Source
Voltage
140
VGS = 15 V
120
TJ = 25°C
10
TJ = 150°C
1
0.001
0.01
0.1
1
10
80
60
40
0
100
RqJC = 0.30°C/W
25
50
75
100
TC, CASE TEMPERATURE (°C)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
100K
P(PK), PEAK TRANSIENT POWER (w)
10 ms
10
This area is limited by RDS(on)
100 ms
Single Pulse
TJ = Max Rated
RqJC = 0.30°C/W
TC = 25°C
0.1
150
125
tAV, TIME IN AVALANCHE (ms)
100
0.1
100
20
Typical performance based
on characterization data
1000
1
800
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
f = 1 MHz
VGS = 0 V
Qg, GATE CHARGE (nC)
100
ID, DRAIN CURRENT (A)
Coss
100
1
0
Ciss
1
1 ms
10 ms
100 ms
10
100
1000
5000
Single Pulse
RqJC = 0.30°C/W
TC = 25°C
10K
1K
100
0.00001
0.0001
0.001
0.01
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
175
0.1
NVHL020N090SC1
TYPICAL CHARACTERISTICS
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
Notes:
ZqJC (t) = r(t) x RqJC
RqJC = 0.30°C/W
Peak TJ = PDM x ZqJC (t) + TC
Duty Cycle, D = t1/t2
P DM
Single Pulse
t1
0.001
t2
0.00001
0.001
0.0001
0.01
0.1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction−to−Ambient Transient Thermal Response Curve
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Size
Quantity
NVHL020N090SC1
NVHL020N090SC1
TO−247
Long Lead
Tube
N/A
N/A
30 Units
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
DOCUMENT NUMBER:
DESCRIPTION:
XXXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
98AON93302G
TO−247−3LD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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