NVMFS003P03P8ZT1G

DATA SHEET www.onsemi.com MOSFET - Power, Single P-Channel, SO8-FL RDS(on) V(BR)DSS ID 1.8 mW @ −10 V −30 V −234 A 2.9 mW @ −4.5 V -30 V, 1.8 mW, -234 A NVMFS003P03P8Z S (1, 2, 3) Features G (4) P−Channel MOSFET • Ultra Low RDS(on) to Improve System Efficiency • Advanced Package Technology in 5x6mm for Space Saving and Excellent Thermal Conduction D (5, 6, 7, 8) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Power Load Switch • Protection: Reverse Current, Over Voltage, and Reverse Negative • Voltage Battery Management 1 DFN5 5x6, 1.27P (SO−8FL) CASE 488AA MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS −30 V Gate−to−Source Voltage VGS "25 V ID −234 A Parameter Continuous Drain Current RqJC (Note 2) Steady State Power Dissipation RqJC (Note 2) Continuous Drain Current RqJA (Notes 1, 2) Power Dissipation RqJA (Notes 1, 2) Pulsed Drain Current TC = 25°C TC = 100°C TC = 25°C −169 PD 168.7 ID −35.7 TC = 100°C Steady State TA = 25°C Single Pulse Drain−to−Source Avalanche Energy (ILpk = 37.1 A) Operating Junction and Storage Temperature Range Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) MARKING DIAGRAM A PD April, 2022 − Rev. 2 S S S G W 3.9 1.9 IDM −900 A EAS 186 mJ TJ, Tstg −55 to +175 °C TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using a 1 in2 pad size, 2 oz. Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. © Semiconductor Components Industries, LLC, 2021 D −25.7 TA = 100°C TA = 25°C, tp = 10 ms W 84.4 TA = 100°C TA = 25°C DFNW5 5x6 (FULL−CUT SO8FL WF) CASE 507BA 1 XXXXXX AYWZZ D D D A Y W ZZ = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Publication Order Number: NVMFS003P03P8Z/D NVMFS003P03P8Z THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Case − Steady State (Drain) (Note 1) Parameter RqJC 0.9 °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 39 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = −250 mA −30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = −250 mA, ref to 25°C Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = "25 V VGS(TH) VGS = VDS, ID = −250 mA VGS(TH)/TJ ID = −250 mA, ref to 25°C 5.5 RDS(on) VGS = −10 V, ID = −23 A 1.2 1.8 VGS = −4.5 V, ID = −20 A 1.9 2.9 gFS VDS = −5 V, ID = −20 A 110 S Input Capacitance Ciss 12120 pF Output Capacitance Coss VGS = 0 V, VDS = −15 V, f = 1.0 MHz Parameter Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage VGS = 0 V, VDS = −30 V V −5 TJ = 25°C mV/°C −10 mA "10 mA −3.0 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Threshold Temperature Coefficient Drain−to−Source On Resistance Froward Transconductance −1.0 mV/°C mW CHARGES AND CAPACITANCES Reverse Transfer Capacitance Crss 4020 4100 VGS = −4.5 V, VDS = −15 V, ID = −23 A Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS 21 Gate−to−Drain Charge QGD 116 Total Gate Charge QG(TOT) nC 167 7 VGS = −10 V, VDS = −15 V, ID = −23 A 277 VGS = −4.5 V, VDS = −15 V, ID = −23 A, RG = 6 W 81 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr ns 440 td(off) 180 tf 400 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr VGS = −10 V, VDS = −15 V, ID = −23 A, RG = 6 W ns 28 116 td(off) 325 tf 380 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = −23 A TJ = 25°C −0.75 TJ = 125°C −0.6 www.onsemi.com 2 −1.3 V NVMFS003P03P8Z ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit DRAIN−SOURCE DIODE CHARACTERISTICS Reverse Recovery Time tRR VGS = 0 V, dls/dt = 100 A/ms, Is = −23 A 70 Charge Time ta Discharge Time tb 28 QRR 116 Reverse Recovery Charge ns 43 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. www.onsemi.com 3 NVMFS003P03P8Z TYPICAL CHARACTERISTICS 400 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) −ID, DRAIN CURRENT (A) −4.2 V 300 −4.0 V 250 200 −3.8 V 150 −3.6 V 100 −3.4 V 50 −3.2 V −3.0 V 0 0.5 1.0 1.5 2.5 2.0 250 200 150 TJ = 25°C 100 50 0 3.0 TJ = 125°C 0 1.0 0.5 4 5 6 7 8 10 9 −VGS, GATE−TO−SOURCE VOLTAGE (V) 2.8 TJ = 25°C 2.4 VGS = −4.5 V 2.0 1.6 VGS = −10 V 1.2 0.8 0.4 0 5 10 15 20 25 30 35 40 45 50 −ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100K VGS = −10 V ID = −23 A TJ = 150°C 1.3 −IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 5 4 3 Figure 2. Transfer Characteristics 1.5 1.4 TJ = −55°C 2 Figure 1. On−Region Characteristics 2.0 1.5 1 −VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = −23 A 3 300 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 2.5 0 VDS = −5 V 350 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) −ID, DRAIN CURRENT (A) 350 0 400 VGS = −10 V to −5 V −4.5 V 1.2 1.1 1.0 0.9 0.8 TJ = 125°C 10K TJ = 85°C 1K TJ = 25°C 100 10 0.7 0.6 −50 −25 0 25 50 75 100 125 150 175 1 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 4 30 NVMFS003P03P8Z TYPICAL CHARACTERISTICS −VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 100K CISS 10K CRSS COSS 1K VGS = 0 V TJ = 25°C f = 1 MHz 100 0 10 5 15 20 30 25 10 VDS = −10 V TJ = 25°C ID = −23 A 9 8 7 6 5 4 QGS 3 QGD 2 1 0 0 100 50 150 200 250 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge 300 100 10K −IS, SOURCE CURRENT (A) VGS = 0 V 1K t, TIME (ns) tf td(off) 100 tr td(on) 10 1 VGS = −10 V VDS = −15 V ID = −23 A 1 10 0.1 0.4 0.5 TJ = 25°C TJ = −55°C 0.6 0.7 0.8 0.9 −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 IPEAK, DRAIN CURRENT (A) ID, DRAIN CURRENT(A) TJ = 125°C 0.3 RG, GATE RESISTANCE (W) 100 1 1 0.1 100 1000 10 10 10 ms 0.5 ms 1 ms 10 ms TC = 25°C Single Pulse VGS ≤ 10 V RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 100 TJ(initial) = 25°C 10 TJ(initial) = 100°C 1 1000 0.0001 0.001 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TAV, TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 5 0.01 NVMFS003P03P8Z TYPICAL CHARACTERISTICS 100 Duty Cycle = 0.5 R(t) (°C/W) 10 0.2 0.1 0.05 1 0.02 0.01 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Shipping† NVMFS003P03P8ZT1G 03P3 DFN5 5x6, 1.27P (Pb−Free) 1500 / Tape & Reel NVMFWS003P03P8ZT1G 03P3W DFNW5, 5x6 (FULL−CUT SO8FL WF) (Pb−Free, Wettable Flanks) 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D 2 A B D1 2X 0.20 C 4X E1 2 1 2 3 q E c A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K PIN 5 (EXPOSED PAD) RECOMMENDED SOLDERING FOOTPRINT* E2 L1 M 2X 0.495 4.560 2X 1.530 G D2 BOTTOM VIEW 2X XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFNW5 5x6 (FULL−CUT SO8FL WF) CASE 507BA ISSUE A DATE 03 FEB 2021 q q GENERIC MARKING DIAGRAM* 1 XXXXXX AYWZZ XXXXXX A Y W ZZ = Specific Device Code *This information is generic. Please refer to = Assembly Location device data sheet for actual part marking. = Year Pb−Free indicator, “G” or microdot “ G”, = Work Week may or may not be present. Some products = Lot Traceability may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON26450H Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DFNW5 5x6 (FULL−CUT SO8FL WF) PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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